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Innovation Diffusion among Case-based Decision-makers
Authors:
Benson Tsz Kin Leung
Abstract:
This paper analyzes a model of innovation diffusion with case-based individuals a la Gilboa and Schmeidler (1995,1996,1997), who decide whether to consume an incumbent or a new product based on their and their social neighbors' previous consumption experiences. I analyze how diffusion pattern changes with individual characteristics, innovation characteristics and social network. In particular, rad…
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This paper analyzes a model of innovation diffusion with case-based individuals a la Gilboa and Schmeidler (1995,1996,1997), who decide whether to consume an incumbent or a new product based on their and their social neighbors' previous consumption experiences. I analyze how diffusion pattern changes with individual characteristics, innovation characteristics and social network. In particular, radical innovation leads to higher initial speed but lower acceleration compared to increment innovation. Social network with stronger overall social tie, lower degree of homophily or higher exposure of reviews from early adopters speed up diffusion of innovation.
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Submitted 27 January, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Sources of quantized excitations via dichotomic topological cycles
Authors:
Bryan Leung,
Emil Prodan
Abstract:
We demonstrate the existence of a conceptually distinct topological pum** phenomenon in one-dimensional chains undergoing topological adiabatic cycles. Specifically, for a stack of two semi-infinite chains cycled in opposite directions and coupled at one edge by a gap** potential, we derive a higher-order bulk-boundary correspondence that relates the bulk Chern number associated with the adiab…
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We demonstrate the existence of a conceptually distinct topological pum** phenomenon in one-dimensional chains undergoing topological adiabatic cycles. Specifically, for a stack of two semi-infinite chains cycled in opposite directions and coupled at one edge by a gap** potential, we derive a higher-order bulk-boundary correspondence that relates the bulk Chern number associated with the adiabatic cycle of a single infinite chain and the number of electrons transferred between the semi-infinite chains. The relation is formulated using the relative index of two projections and proven using K-theoretic calculations. The phenomenon is exemplified using the Rice-Mele model and possible experimental implementations with classical and quantum degrees of freedom are discussed.
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Submitted 2 May, 2023; v1 submitted 24 January, 2022;
originally announced January 2022.
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OOWL500: Overcoming Dataset Collection Bias in the Wild
Authors:
Brandon Leung,
Chih-Hui Ho,
Amir Persekian,
David Orozco,
Yen Chang,
Erik Sandstrom,
Bo Liu,
Nuno Vasconcelos
Abstract:
The hypothesis that image datasets gathered online "in the wild" can produce biased object recognizers, e.g. preferring professional photography or certain viewing angles, is studied. A new "in the lab" data collection infrastructure is proposed consisting of a drone which captures images as it circles around objects. Crucially, the control provided by this setup and the natural camera shake inher…
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The hypothesis that image datasets gathered online "in the wild" can produce biased object recognizers, e.g. preferring professional photography or certain viewing angles, is studied. A new "in the lab" data collection infrastructure is proposed consisting of a drone which captures images as it circles around objects. Crucially, the control provided by this setup and the natural camera shake inherent to flight mitigate many biases. It's inexpensive and easily replicable nature may also potentially lead to a scalable data collection effort by the vision community. The procedure's usefulness is demonstrated by creating a dataset of Objects Obtained With fLight (OOWL). Denoted as OOWL500, it contains 120,000 images of 500 objects and is the largest "in the lab" image dataset available when both number of classes and objects per class are considered. Furthermore, it has enabled several of new insights on object recognition. First, a novel adversarial attack strategy is proposed, where image perturbations are defined in terms of semantic properties such as camera shake and pose. Indeed, experiments have shown that ImageNet has considerable amounts of pose and professional photography bias. Second, it is used to show that the augmentation of in the wild datasets, such as ImageNet, with in the lab data, such as OOWL500, can significantly decrease these biases, leading to object recognizers of improved generalization. Third, the dataset is used to study questions on "best procedures" for dataset collection. It is revealed that data augmentation with synthetic images does not suffice to eliminate in the wild datasets biases, and that camera shake and pose diversity play a more important role in object recognition robustness than previously thought.
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Submitted 24 August, 2021;
originally announced August 2021.
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Domain Adaptation for Real-World Single View 3D Reconstruction
Authors:
Brandon Leung,
Siddharth Singh,
Arik Horodniceanu
Abstract:
Deep learning-based object reconstruction algorithms have shown remarkable improvements over classical methods. However, supervised learning based methods perform poorly when the training data and the test data have different distributions. Indeed, most current works perform satisfactorily on the synthetic ShapeNet dataset, but dramatically fail in when presented with real world images. To address…
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Deep learning-based object reconstruction algorithms have shown remarkable improvements over classical methods. However, supervised learning based methods perform poorly when the training data and the test data have different distributions. Indeed, most current works perform satisfactorily on the synthetic ShapeNet dataset, but dramatically fail in when presented with real world images. To address this issue, unsupervised domain adaptation can be used transfer knowledge from the labeled synthetic source domain and learn a classifier for the unlabeled real target domain. To tackle this challenge of single view 3D reconstruction in the real domain, we experiment with a variety of domain adaptation techniques inspired by the maximum mean discrepancy (MMD) loss, Deep CORAL, and the domain adversarial neural network (DANN). From these findings, we additionally propose a novel architecture which takes advantage of the fact that in this setting, target domain data is unsupervised with regards to the 3D model but supervised for class labels. We base our framework off a recent network called pix2vox. Results are performed with ShapeNet as the source domain and domains within the Object Dataset Domain Suite (ODDS) dataset as the target, which is a real world multiview, multidomain image dataset. The domains in ODDS vary in difficulty, allowing us to assess notions of domain gap size. Our results are the first in the multiview reconstruction literature using this dataset.
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Submitted 24 August, 2021;
originally announced August 2021.
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Black-Box Test-Time Shape REFINEment for Single View 3D Reconstruction
Authors:
Brandon Leung,
Chih-Hui Ho,
Nuno Vasconcelos
Abstract:
Much recent progress has been made in reconstructing the 3D shape of an object from an image of it, i.e. single view 3D reconstruction. However, it has been suggested that current methods simply adopt a "nearest-neighbor" strategy, instead of genuinely understanding the shape behind the input image. In this paper, we rigorously show that for many state of the art methods, this issue manifests as (…
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Much recent progress has been made in reconstructing the 3D shape of an object from an image of it, i.e. single view 3D reconstruction. However, it has been suggested that current methods simply adopt a "nearest-neighbor" strategy, instead of genuinely understanding the shape behind the input image. In this paper, we rigorously show that for many state of the art methods, this issue manifests as (1) inconsistencies between coarse reconstructions and input images, and (2) inability to generalize across domains. We thus propose REFINE, a postprocessing mesh refinement step that can be easily integrated into the pipeline of any black-box method in the literature. At test time, REFINE optimizes a network per mesh instance, to encourage consistency between the mesh and the given object view. This, along with a novel combination of regularizing losses, reduces the domain gap and achieves state of the art performance. We believe that this novel paradigm is an important step towards robust, accurate reconstructions, remaining relevant as new reconstruction networks are introduced.
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Submitted 22 August, 2021;
originally announced August 2021.
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Competition, Politics, & Social Media
Authors:
Benson Tsz Kin Leung,
Pinar Yildirim
Abstract:
An increasing number of politicians are relying on cheaper, easier to access technologies such as online social media platforms to communicate with their constituency. These platforms present a cheap and low-barrier channel of communication to politicians, potentially intensifying political competition by allowing many to enter political races. In this study, we demonstrate that lowering costs of…
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An increasing number of politicians are relying on cheaper, easier to access technologies such as online social media platforms to communicate with their constituency. These platforms present a cheap and low-barrier channel of communication to politicians, potentially intensifying political competition by allowing many to enter political races. In this study, we demonstrate that lowering costs of communication, which allows many entrants to come into a competitive market, can strengthen an incumbent's position when the newcomers compete by providing more information to the voters. We show an asymmetric bad-news-good-news effect where early negative news hurts the challengers more than the positive news benefit them, such that in aggregate, an incumbent politician's chances of winning is higher with more entrants in the market. Our findings indicate that communication through social media and other platforms can intensify competition, how-ever incumbency advantage may be strengthened rather than weakened as an outcome of higher number of entrants into a political market.
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Submitted 6 December, 2020;
originally announced December 2020.
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Learning in a Small/Big World
Authors:
Benson Tsz Kin Leung
Abstract:
Complexity and limited ability have profound effect on how we learn and make decisions under uncertainty. Using the theory of finite automaton to model belief formation, this paper studies the characteristics of optimal learning behavior in small and big worlds, where the complexity of the environment is low and high, respectively, relative to the cognitive ability of the decision maker. Optimal b…
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Complexity and limited ability have profound effect on how we learn and make decisions under uncertainty. Using the theory of finite automaton to model belief formation, this paper studies the characteristics of optimal learning behavior in small and big worlds, where the complexity of the environment is low and high, respectively, relative to the cognitive ability of the decision maker. Optimal behavior is well approximated by the Bayesian benchmark in very small world but is more different as the world gets bigger. In addition, in big worlds, the optimal learning behavior could exhibit a wide range of well-documented non-Bayesian learning behavior, including the use of heuristics, correlation neglect, persistent over-confidence, inattentive learning, and other behaviors of model simplification or misspecification. These results establish a clear and testable relationship among the prominence of non-Bayesian learning behavior, complexity, and cognitive ability.
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Submitted 30 March, 2023; v1 submitted 24 September, 2020;
originally announced September 2020.
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Lack of Resilience in Transportation Networks: Economic Implications
Authors:
Margaret Kurth,
William Kozlowski,
Alexander Ganin,
Avi Mersky,
Billy Leung,
Maksim Kitsak,
Igor Linkov
Abstract:
Disruptions to transportation networks are inevitable. Currently, most mandated development-related transportation planning is intended to prepare for frequently occurring and observable disruptions while low probability events that have not yet materialized attract less attention. When road networks are not resilient, these unpredictable events can cause significant delays that may not be proport…
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Disruptions to transportation networks are inevitable. Currently, most mandated development-related transportation planning is intended to prepare for frequently occurring and observable disruptions while low probability events that have not yet materialized attract less attention. When road networks are not resilient, these unpredictable events can cause significant delays that may not be proportional to the extent of the disruption. Enhancing resilience can help in mitigating consequences of disruptions but requires financial investment that is difficult to justify given that low probability event may not have materialized. This paper highlights economic implications of unmitigated random disruptions in urban road systems and makes the case for investment in transportation network resilience. We utilized a model of urban transportation network performance that quantifies resilience and demonstrated its integration with microeconomic transportation planning model REMI TranSight. The model was applied to 10 cities in the USA to calculate several economic indicators under baseline scenario where economic impact was assumed to be proportional to the magnitude of disruptive events and under a test scenario where the magnitude of disruption was used to calculate additional delays in transportation networks and these additional delays were explicitly integrated in REMI model. Results show that GDP losses suffered as a result of disruption may be far more significant in the case scenario and economic output is not necessarily back to normal in the year the following disruptive event. We thus conclude that support for investment decisions on network efficiency and resilience management should be based on a framework that utilizes resilience, quantified in terms that are compatible with standard practice, and scenarios to test the implications of topological attributes.
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Submitted 9 December, 2019;
originally announced December 2019.
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Microscopic Origin of Regeneration Noise in Relaxation Oscillator and its Macroscopic Circuit Manifestation
Authors:
Y. Ng,
B. Leung,
M. Kononenko,
S. Safavi-Naeini
Abstract:
This paper augments the existing macroscopic circuit noise model for phase noise in relaxation oscillators by showing the microscopic origins of the noise and explains temperature dependency. The noise arises from fluctuation of the energy accompanying the excess carriers on device (transistors) capacitors in the oscillator. Such fluctuation has its physical origin from the noise of such carriers,…
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This paper augments the existing macroscopic circuit noise model for phase noise in relaxation oscillators by showing the microscopic origins of the noise and explains temperature dependency. The noise arises from fluctuation of the energy accompanying the excess carriers on device (transistors) capacitors in the oscillator. Such fluctuation has its physical origin from the noise of such carriers, which, microscopically, are distributed across the energy levels (Fermi-Dirac). Furthermore this energy can be interpreted, circuit-wise, such that its gradient, with respect to circuit state variables, correspond to time evolution of current and voltage i.e. the oscillator dynamics. Three methods: potential energy based (macroscopic), free energy based (microscopic), Langevin equation based, are used to develop the noise model. The model temperature variation over range of 77K-300K was compared to measured results on oscillators fabricated in 0.13 μm CMOS technology. The trend agree reasonably well, where above a crossover temperature, the phase noise is a monotonic increasing function of temperature, while below the crossover temperature, the phase noise stays relatively constant and an explanation based on Langevin equation, extended to quantum regime, is offered.
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Submitted 14 August, 2018;
originally announced August 2018.
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Bulk-Boundary Correspondence for Topological Insulators with Quantized Magneto-Electric Effect
Authors:
Bryan Leung,
Emil Prodan
Abstract:
We study bulk-boundary correspondences and related surface phenomena stabilized by the second Chern number in three-dimensional insulators driven in adiabatic cycles. Magnetic fields and disorder effects are incorporated in our analysis using operator algebraic methods. We use the connecting maps between the $K$-theories of bulk and boundary algebras as engines for the bulk-boundary correspondence…
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We study bulk-boundary correspondences and related surface phenomena stabilized by the second Chern number in three-dimensional insulators driven in adiabatic cycles. Magnetic fields and disorder effects are incorporated in our analysis using operator algebraic methods. We use the connecting maps between the $K$-theories of bulk and boundary algebras as engines for the bulk-boundary correspondences. We discovered that both the exponential and the index connecting maps are relevant for the context considered here as they lead to distinct experimentally observable surface phenomena, such as pum** and transfer of quantum surface Hall states or proximity induced Hall effect. The surface Hall physics of time-reversal symmetric topological insulators is also investigated using the new tools, which can model irrational magnetic fluxes and arbitrary large surface disorder.
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Submitted 23 March, 2020; v1 submitted 18 June, 2018;
originally announced June 2018.
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Bistable Circuit Behaviour as a 2 level (stable/metastable) potential energy system
Authors:
Bosco Leung,
Yon Chiet Ng,
Safieddin Safavi-Naeini
Abstract:
A novel model of analyzing Schmitt trigger as 2 level (metastable/stable) energy system is presented. The energy of the 2 level system is identified. In an MOS implementation, this arises from the electrostatic potential energy of the electrons on the gate to source capacitance of the cross coupled MOS transistors. The electrostatic energy, upon co-ordinate transformation, (incorporating the nonli…
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A novel model of analyzing Schmitt trigger as 2 level (metastable/stable) energy system is presented. The energy of the 2 level system is identified. In an MOS implementation, this arises from the electrostatic potential energy of the electrons on the gate to source capacitance of the cross coupled MOS transistors. The electrostatic energy, upon co-ordinate transformation, (incorporating the nonlinear MOS device behaviour and cross coupling), yields an expression for the 2 level system energy. The 2 level system, described under the transformed co-ordinate, is simulated. Simulation on the dynamics of the system shows a metastsable state and two stable states, corresponding to the a maximum(metastable) energy and a minimum(stable) energy, as predicted by the energy expression in the model. This result agrees with earlier attempt based on nonlinear dynamic system approach, whereby the potential is interpreted from the point of view of the gradient of vector field. In addition, the model gives physical design insight on how the change in circuit parameters (such as gm, R), affects the energy characteristics, hence leads to effective design of such 2 level system.
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Submitted 1 December, 2016;
originally announced December 2016.
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Spin-lattice relaxation in bismuth chalcogenides
Authors:
Robert E. Taylor,
Belinda Leung,
Michael P. Lake,
Louis-S. Bouchard
Abstract:
Bismuth chalcogenides Bi$_2$Se$_3$ and Bi$_2$Te$_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are important in that they provide the charge carriers in TE applications and compromise the performance of these materials as TIs. We present the first solid-state…
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Bismuth chalcogenides Bi$_2$Se$_3$ and Bi$_2$Te$_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are important in that they provide the charge carriers in TE applications and compromise the performance of these materials as TIs. We present the first solid-state nuclear magnetic resonance (NMR) study of the $^{77}$Se and $^{125}$Te NMR resonances in polycrystalline powders of Bi$_2$Se$_3$ and Bi$_2$Te$_3$, respectively. The spin-lattice ($T_1$) relaxation is modeled by at most two exponentials. Within the framework of this model, the NMR measurement is sensitive to the distribution of native defects within these materials. One component corresponds to a stoichiometric fraction, an insulator with a very long $T_1$, whereas the other component is attributed to a sample fraction with high defect content with a short $T_1$ resulting from interaction with the conduction carriers. The absence of a very long $T_1$ in the bismuth telluride suggests defects throughout the sample. For the bismuth selenide, defect regions segregate into domains. We also find a substantial difference in the short $T_1$ component for $^{125}$Te nuclei (76 ms) and $^{77}$Se (0.63 s) in spite of the fact that these materials have nearly identical lattice structures, chemical and physical properties. Investigations of the NMR shift and Korringa law indicate that the coupling to the conduction band electrons at the chalcogenide sites is much stronger in the telluride. The results are consistent with a stronger spin-orbit coupling (SOC) to the $p$-band electrons in the telluride. If most parameters of a given material are kept equal, this type of experiment could provide a useful probe of SOC in engineered TI materials.
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Submitted 21 June, 2015;
originally announced June 2015.
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Nanodiamond Landmarks for Subcellular Multimodal Optical and Electron Imaging
Authors:
Mark A. Zurbuchen,
Michael P. Lake,
Sirus A. Kohan,
Belinda Leung,
Louis-S. Bouchard
Abstract:
There is a growing need for biolabels that can be used in both optical and electron microscopies, are non-cytotoxic, and do not photobleach. Such biolabels could enable targeted nanoscale imaging of sub-cellular structures, and help to establish correlations between conjugation-delivered biomolecules and function. Here we demonstrate a subcellular multi-modal imaging methodology that enables local…
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There is a growing need for biolabels that can be used in both optical and electron microscopies, are non-cytotoxic, and do not photobleach. Such biolabels could enable targeted nanoscale imaging of sub-cellular structures, and help to establish correlations between conjugation-delivered biomolecules and function. Here we demonstrate a subcellular multi-modal imaging methodology that enables localization of inert particulate probes, consisting of nanodiamonds having fluorescent nitrogen-vacancy centers. These are functionalized to target specific structures, and are observable by both optical and electron microscopies. Nanodiamonds targeted to the nuclear pore complex are rapidly localized in electron-microscopy diffraction mode to enable "zooming-in" to regions of interest for detailed structural investigations. Optical microscopies reveal nanodiamonds for in-vitro tracking or uptake-confirmation. The approach is general, works down to the single nanodiamond level, and can leverage the unique capabilities of nanodiamonds, such as biocompatibility, sensitive magnetometry, and gene and drug delivery.
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Submitted 21 June, 2015;
originally announced June 2015.
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Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions
Authors:
Dimitrios Koumoulis,
Belinda Leung,
Thomas C. Chasapis,
Robert Taylor,
Daniel King Jr.,
Mercouri G. Kanatzidis,
Louis-S. Bouchard
Abstract:
Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder…
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Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.
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Submitted 21 June, 2015;
originally announced June 2015.
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Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator
Authors:
Dimitrios Koumoulis,
Thomas Christos Chasapis,
Belinda Leung,
Robert E. Taylor,
Costas C. Stoumpos,
Nicholas P. Calta,
Mercouri G. Kanatzidis,
Louis-Serge Bouchard
Abstract:
In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion in…
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In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn, and $^{125}$Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.
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Submitted 21 June, 2015;
originally announced June 2015.
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Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators
Authors:
T. C. Chasapis,
D. Koumoulis,
B. Leung,
N. P. Calta,
S. -H Lo,
V. P. Dravid,
L. S. Bouchard,
M. G. Kanatzidis
Abstract:
The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p to n transition. The tetradymite Bi2Te3_xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral…
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The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p to n transition. The tetradymite Bi2Te3_xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x=1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two band model for the different carrier types, indicate that the mixed state originates from different type of native defects that strongly compensate at the crossover point.
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Submitted 17 June, 2015;
originally announced June 2015.
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Noise Model of Relaxation Oscillators Due to Feedback Regeneration Based on Physical Phase Change
Authors:
Bosco Leung
Abstract:
A new approach to investigate noise spikes due to regeneration in a relaxation oscillator is proposed. Noise spikes have not been satisfactorily accounted for in traditional phase noise models. This paper attempts to explain noise spikes/jump phenomenon by viewing it as phase change in the thermodynamic system(for example, from gas to liquid or magnetization of ferromagnet). Both are due to regene…
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A new approach to investigate noise spikes due to regeneration in a relaxation oscillator is proposed. Noise spikes have not been satisfactorily accounted for in traditional phase noise models. This paper attempts to explain noise spikes/jump phenomenon by viewing it as phase change in the thermodynamic system(for example, from gas to liquid or magnetization of ferromagnet). Both are due to regeneration (positive feedback in oscillator as well as alignment of spin due to positive feedback in ferromagnet). The mathematical tool used is the partition function in thermodynamics, and the results mapped between thermodynamic system and relaxation oscillator. Theory is developed and formula derived to predict the magnitude of the jump, as a function of design parameter such as regeneration parameter or loop gain. Formulas show that noise increases sharply as regeneration parameter/loop gain approaches one, in much the same way when temperature approaches critical temperature in phase change. Simulations on circuits (Eldo) using CMOS as well as Monte Carlo simulations (Metropolis) on ferromagnet (Ising model) were performed and both show jump behaviour consistent with formula. Measurements on relaxation oscillators fabricated in 0.13um CMOS technology verify such behaviour, where the sharp increase in noise when regeneration parameter/loop gain is close to one, matches closely with the theoretical formula. Using the formula the designer can quantify the variation of noise spikes dependency on design parameters such as gm (device transconductance), R, I0, via their influence on regeneration parameter/loop gain.
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Submitted 21 January, 2015; v1 submitted 29 July, 2014;
originally announced July 2014.
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Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures
Authors:
Young-Ho Ko,
Jie Song,
Benjamin Leung,
Jung Han,
Yong-Hoon Cho
Abstract:
Broadband visible light emitting, three-dimensional hexagonal annular microstructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated via selective-area epitaxial growth. The single hexagonal annular structure is composed of not only polar facet of (0001) on top surface but also semi-polar facets of {10-11} and {11-22} in inner and outer sidewalls, exhibiting multi-color visible light…
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Broadband visible light emitting, three-dimensional hexagonal annular microstructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated via selective-area epitaxial growth. The single hexagonal annular structure is composed of not only polar facet of (0001) on top surface but also semi-polar facets of {10-11} and {11-22} in inner and outer sidewalls, exhibiting multi-color visible light emission from InGaN/GaN MQWs formed on the different facets. The InGaN MQWs on (0001) facet emits the longer wavelength (green color) due to the larger well thickness and the higher In composition, while those on semi-polar facets of {10-11} and {11-22} had highly-efficient shorter wavelength (violet to blue color) emission caused by smaller well thickness and smaller In composition. By combining the multiple color emission depending on different facets, high efficiency broadband visible light emission could be achieved. The emission color can be changed with excitation power density owing to the built-in electric field on the (0001) facet, which is confirmed by time-resolved luminescence experiments. The hexagonal annular structures can be a critical building block for highly efficient broadband visible light emitting sources, providing a solution to previous problems related to the fabrication issues for phosphor-free white light emitting devices.
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Submitted 24 February, 2014;
originally announced February 2014.
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Isotropic Band Gaps and Freeform Waveguides Observed in Hyperuniform Disordered Photonic Solids
Authors:
Weining Man,
Marian Florescu,
Eric Paul Williamson,
Yingquan He,
Seyed Reza Hashemizad,
Brian Y. C. Leung,
Devin Robert Liner,
Salvatore Torquato,
Paul M. Chaikin,
Paul J. Steinhardt
Abstract:
Recently, disordered photonic media and random textured surfaces have attracted increasing attention as strong light diffusers with broadband and wide-angle properties. We report the first experimental realization of an isotropic complete photonic band gap (PBG) in a two-dimensional (2D) disordered dielectric structure. This structure is designed by a constrained-optimization method, which combine…
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Recently, disordered photonic media and random textured surfaces have attracted increasing attention as strong light diffusers with broadband and wide-angle properties. We report the first experimental realization of an isotropic complete photonic band gap (PBG) in a two-dimensional (2D) disordered dielectric structure. This structure is designed by a constrained-optimization method, which combines advantages of both isotropy due to disorder and controlled scattering properties due to low density fluctuations (hyperuniformity) and uniform local topology. Our experiments use a modular design composed of Al2O3 walls and cylinders arranged in a hyperuniform disordered network. We observe a complete PBG in the microwave region, in good agreement with theoretical simulations, and show that the intrinsic isotropy of this novel class of PBG materials enables remarkable design freedom, including the realization of waveguides with arbitrary bending angles impossible in photonic crystals. This first experimental verification of a complete PBG and realization of functional defects in this new class of materials demonstrates their potential as building blocks for precise manipulation of photons in planar optical micro-circuits and has implications for disordered acoustic and electronic bandgap materials.
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Submitted 11 November, 2013;
originally announced November 2013.
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The non-commutative n-th Chern number
Authors:
Emil Prodan,
Bryan Leung,
Jean Bellissard
Abstract:
The theory of the higher Chern numbers in the presence of strong disorder is developed. Sharp quantization and homotopy invariance conditions are provided. The relevance of the result to the field of strongly disordered topological insulators is discussed.
The theory of the higher Chern numbers in the presence of strong disorder is developed. Sharp quantization and homotopy invariance conditions are provided. The relevance of the result to the field of strongly disordered topological insulators is discussed.
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Submitted 14 October, 2013; v1 submitted 10 May, 2013;
originally announced May 2013.
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A Non-Commutative Formula for the Isotropic Magneto-Electric Response
Authors:
Bryan Leung,
Emil Prodan
Abstract:
A non-commutative formula for the isotropic magneto-electric response of disordered insulators under magnetic fields is derived using the methods of non-commutative geometry. Our result follows from an explicit evaluation of the Ito derivative with respect to the magnetic field of the non-commutative formula for the electric polarization reported in Ref. 1. The quantization, topological invariance…
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A non-commutative formula for the isotropic magneto-electric response of disordered insulators under magnetic fields is derived using the methods of non-commutative geometry. Our result follows from an explicit evaluation of the Ito derivative with respect to the magnetic field of the non-commutative formula for the electric polarization reported in Ref. 1. The quantization, topological invariance and connection to a second Chern number of the magneto-electric response are discussed in the context of 3-dimensional, disordered, time-reversal or inversion symmetric topological insulators.
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Submitted 19 December, 2012; v1 submitted 27 November, 2012;
originally announced November 2012.
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Effect of Strong Disorder in a 3-Dimensional Topological Insulator: Phase Diagram and Maps of the Z2 Invariant
Authors:
Bryan Leung,
Emil Prodan
Abstract:
We study the effect of strong disorder in a 3-dimensional topological insulators with time-reversal symmetry and broken inversion symmetry. Firstly, using level statistics analysis, we demonstrate the persistence of delocalized bulk states even at large disorder. The delocalized spectrum is seen to display the levitation and pair annihilation effect, indicating that the delocalized states continue…
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We study the effect of strong disorder in a 3-dimensional topological insulators with time-reversal symmetry and broken inversion symmetry. Firstly, using level statistics analysis, we demonstrate the persistence of delocalized bulk states even at large disorder. The delocalized spectrum is seen to display the levitation and pair annihilation effect, indicating that the delocalized states continue to carry the Z2 invariant after the onset of disorder. Secondly, the Z2 invariant is computed via twisted boundary conditions using an efficient numerical algorithm. We demonstrate that the Z2 invariant remains quantized and non-fluctuating even after the spectral gap becomes filled with dense localized states. In fact, our results indicate that the Z2 invariant remains quantized until the mobility gap closes or until the Fermi level touches the mobility edges. Based on such data, we compute the phase diagram of the Bi2Se3 topological material as function of disorder strength and position of the Fermi level.
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Submitted 14 May, 2012; v1 submitted 9 February, 2012;
originally announced February 2012.
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77Se NMR Investigation of Fe-doped Bi2Se3
Authors:
Robert E. Taylor,
Hamad M. Alyahyaei,
Zhiyong Wang,
**g Shi,
Mark A. Zurbuchen,
Belinda Leung,
Nanette N. Jarenwattananon,
Xufeng Kou,
Louis-S. Bouchard
Abstract:
Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic impurities such as iron open a band gap at the Dirac point on the surface. Since magnetically-doped TIs are important in technological applications, a good unde…
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Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic impurities such as iron open a band gap at the Dirac point on the surface. Since magnetically-doped TIs are important in technological applications, a good understanding of their properties is needed. In this article, 77Se nuclear magnetic resonance (NMR) spectroscopy has been used to investigate Fe-doped Bi2Se3. Spin-lattice relaxation measurements indicate that the Fe dopants provide a spin diffusion relaxation mechanism at low temperatures for the 77Se. Above 320 K, the predominant 77Se relaxation mechanism resulting from interaction with the conduction carriers is thermally induced with an activation energy of 21.5 kJ/mol (5.1 kcal/mol, 222 meV) and likely arises from inter-band excitations. Magic-angle spinning produces negligible narrowing of the 77Se resonance at 7 T, suggesting a statistical distribution of material defects and is also consistent with a dipolar interaction with the neighboring quadrupolar nucleus.
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Submitted 16 June, 2013; v1 submitted 5 September, 2011;
originally announced September 2011.
