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Probing Hyperbolic and Surface Phonon-Polaritons in 2D materials using Raman Spectroscopy
Authors:
A. Bergeron,
C. Gradziel,
R. Leonelli,
S. Francoeur
Abstract:
The hyperbolic dispersion relation of phonon-polaritons (PhPol) provides high-momentum states, highly directional propagation, subdiffractional confinement, large optical density of states, and enhanced light-matter interactions. In this work, we use Raman spectroscopy in the convenient backscattering configuration to probe PhPol in GaSe, a 2D material presenting two hyperbolic regions separated b…
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The hyperbolic dispersion relation of phonon-polaritons (PhPol) provides high-momentum states, highly directional propagation, subdiffractional confinement, large optical density of states, and enhanced light-matter interactions. In this work, we use Raman spectroscopy in the convenient backscattering configuration to probe PhPol in GaSe, a 2D material presenting two hyperbolic regions separated by a \textit{double} reststrahlen band. By varying the incidence angle, dispersion relations are revealed. Raman spectra calculations confirm the observation of one surface and two extraordinary guided polaritons and matches the evolution of PhPol frequency as a function of confinement. Resonant excitation close to the excitonic state singularly exalts the scattering efficiency of PhPol. Raman spectroscopy of PhPol in non-centrosymmetry 2D materials does not require any wavevector matching strategies. Widely available, it may accelerate the development of MIR nanophotonic devices and applications.
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Submitted 28 August, 2022;
originally announced August 2022.
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Lattice vibrations and dynamic disorder in two-dimensional hybrid lead-halide perovskites
Authors:
Vlad Alexandru Dragomir,
Stefanie Neutzner,
Claudio Quarti,
Daniele Cortecchia,
Annamaria Petrozza,
Sjoerd Roorda,
David Beljonne,
Richard Leonelli,
Ajay Ram Srimath Kandada,
Carlos Silva
Abstract:
By means of non-resonant Raman spectroscopy and density functional theory calculations, we measure and assign the vibrational spectrum of two distinct two-dimensional lead-iodide perovskite derivatives. These two samples are selected in order to probe the effects of the organic cation on lattice dynamics. One templating cation is composed of a phenyl-substituted ammonium derivative, while the othe…
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By means of non-resonant Raman spectroscopy and density functional theory calculations, we measure and assign the vibrational spectrum of two distinct two-dimensional lead-iodide perovskite derivatives. These two samples are selected in order to probe the effects of the organic cation on lattice dynamics. One templating cation is composed of a phenyl-substituted ammonium derivative, while the other contains a linear alkyl group. We find that modes that directly involve the organic cation are more prevalent in the phenyl-substituted derivative. Comparison of the temperature dependence of the Raman spectra reveals differences in the nature of dynamic disorder, with a strong dependence on the molecular nature of the organic moiety.
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Submitted 12 December, 2018;
originally announced December 2018.
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Stable biexcitons in two-dimensional metal-halide perovskites with strong dynamic lattice disorder
Authors:
Félix Thouin,
Stefanie Neutzner,
Daniele Cortecchia,
Vlad Alexandru Dragomir,
Cesare Soci,
Teddy Salim,
Yeng Ming Lam,
Richard Leonelli,
Annamaria Petrozza,
Ajay Ram Srimath Kandada,
Carlos Silva
Abstract:
With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors --- chemical, electronic and structural --- that govern strong multi-exciton correlations. Here,…
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With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors --- chemical, electronic and structural --- that govern strong multi-exciton correlations. Here, by means of two-dimensional coherent spectroscopy, we examine excitonic many-body effects in pure, single-layer (PEA)$_2$PbI$_4$ (PEA = phenylethylammonium). We determine the binding energy of biexcitons --- correlated two-electron, two-hole quasiparticles --- to be $44 \pm 5$\,meV at room temperature. The extraordinarily high values are similar to those reported in other strongly excitonic two-dimensional materials such as transition-metal dichalchogenides. Importantly, we show that this binding energy increases by $\sim25$\% upon cooling to 5\,K. Our work highlights the importance of multi-exciton correlations in this class of technologically promising, solution-processable materials, in spite of the strong effects of lattice fluctuations and dynamic disorder.
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Submitted 11 February, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Incoherent population mixing contributions to phase-modulation two-dimensional coherent excitation spectra
Authors:
Pascal Grégoire,
Ajay Ram Srimath Kandada,
Eleonora Vella,
Richard Leonelli,
Carlos Silva
Abstract:
We present theoretical and experimental results showing the effects of incoherent population mixing on two-dimensional (2D) coherent excitation spectra that are measured via a time-integrated population and phase-sensitive detection. The technique uses four collinear ultrashort pulses and phase modulation to acquire two-dimensional spectra by isolating specific nonlinear contributions to the photo…
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We present theoretical and experimental results showing the effects of incoherent population mixing on two-dimensional (2D) coherent excitation spectra that are measured via a time-integrated population and phase-sensitive detection. The technique uses four collinear ultrashort pulses and phase modulation to acquire two-dimensional spectra by isolating specific nonlinear contributions to the photoluminescence or photocurrent excitation signal. We demonstrate that an incoherent contribution to the measured lineshape, arising from nonlinear population dynamics over the entire photoexcitation lifetime, generates a similar lineshape to the expected 2D coherent spectra in condensed-phase systems. In those systems, photoexcitations are mobile such that inter-particle interactions are important on any timescale, including those long compared to the 2D coherent experiment. Measurements on a semicrystalline polymeric semiconductor film at low temperature show that, in some conditions in which multi-exciton interactions are suppressed, the technique predominantly detects coherent signal and can be used, in our example, to extract homogeneous linewidths. The same method used on a lead-halide perovskite photovoltaic cell shows that incoherent population mixing of mobile photocarriers can dominate the measured signal since carrier-carrier bimolecular scattering is active even at low excitation densities, which hides the coherent contribution to the spectral lineshape.
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Submitted 9 July, 2017;
originally announced July 2017.
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Excitonic coupling dominates the homogeneous photoluminescence excitation linewidth in semicrystalline polymeric semiconductors
Authors:
Pascal Grégoire,
Eleonora Vella,
Matthew Dyson,
Claudia M. Bazán,
Richard Leonelli,
Natalie Stingelin,
Paul N. Stavrinou,
Eric R. Bittner,
Carlos Silva
Abstract:
We measure the homogeneous excitation linewidth of regioregular poly(3-hexylthiophene), a model semicrystalline polymeric semiconductor, by means of two-dimensional coherent photoluminescence excitation spectroscopy. At a temperature of 8\,K, we find a linewidth that is always $\gtrsim 110$\,meV full-width-at-half-maximum, which is a significant fraction of the total linewidth. It displays a spect…
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We measure the homogeneous excitation linewidth of regioregular poly(3-hexylthiophene), a model semicrystalline polymeric semiconductor, by means of two-dimensional coherent photoluminescence excitation spectroscopy. At a temperature of 8\,K, we find a linewidth that is always $\gtrsim 110$\,meV full-width-at-half-maximum, which is a significant fraction of the total linewidth. It displays a spectral dependence and is minimum near the 0--0 origin peak. We interpret this spectral dependence of the homogeneous excitation linewidth within the context of a weakly coupled aggregate model.
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Submitted 24 April, 2017; v1 submitted 10 February, 2017;
originally announced February 2017.
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Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy
Authors:
Alaric Bergeron,
John Ibrahim,
Richard Leonelli,
Sébastien Francoeur
Abstract:
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity condition…
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Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga$_2$Se$_3$, Ga$_2$O$_3$ and amorphous and crystalline selenium. We find that no safe measurement power exists for optical measurements on ultrathin GaSe in ambient conditions. We demonstrate that the simultaneous presence of oxygen, humidity, and above-gap illumination is required to activate this photo-oxidation process, which is attributed to the transfer of photo-generated charge carriers towards aqueous oxygen at the sample surface, generating highly reactive superoxide anions that rapidly degrade the sample and quench the optical response of the material.
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Submitted 12 June, 2017; v1 submitted 20 December, 2016;
originally announced December 2016.
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Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
Authors:
A. Favron,
E. Gaufrès,
F. Fossard,
P. L. Lévesque,
A-L. Phaneuf-L'Heureux,
N. Y-W. Tang,
A. Loiseau,
R. Leonelli,
S. Francoeur,
R. Martel
Abstract:
Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Proper…
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Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein, we investigate the crystal degradation using in-situ Raman and transmission electron spectroscopies and highlight a process involving a photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine states were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.
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Submitted 21 August, 2014; v1 submitted 2 August, 2014;
originally announced August 2014.
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Carrier recombination dynamics in InGaN/GaN multiple quantum wells
Authors:
Colin-N. Brosseau,
Mathieu Perrin,
Carlos Silva,
Richard Leonelli
Abstract:
We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer than 1\,$μ$s. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through…
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We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer than 1\,$μ$s. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly-isolated clusters of localization centers.
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Submitted 19 July, 2010; v1 submitted 14 April, 2010;
originally announced April 2010.
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Carrier thermal escape in families of InAs/InP self-assembled quantum dots
Authors:
Guillaume Gélinas,
Ali Lanacer,
Richard Leonelli,
Remo A. Masut,
Sylvain Raymond,
Philip J. Poole
Abstract:
We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by tra…
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We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs.
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Submitted 2 October, 2009;
originally announced October 2009.
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Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation
Authors:
S. Turcotte,
S. Larouche,
J. -N. Beaudry,
L. Martinu,
R. A. Masut,
P. Desjardins,
R. Leonelli
Abstract:
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experim…
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The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experimental techniques independently reveal that not only the oscillator strength of the E+ transition but also that of E_ + Delta(so) become larger compared to that of the fundamental gap as the N content increases. Since the same conduction band is involved in both the E_ transition and its split-off replica, these results reveal that adding nitrogen in GaAs1-xNx alloys affects not only the conduction but also the valence bands.
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Submitted 15 May, 2008;
originally announced May 2008.
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The origin of the E+ transition in GaAsN alloys
Authors:
V. Timoshevskii,
N. Madini,
M. Cote,
R. Leonelli
Abstract:
Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is identified by calculating the imaginary part of the dielectric function. The evolution of the energy of this transition with nitrogen concentration is studied and the origin of this transition is identified by analyzing t…
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Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is identified by calculating the imaginary part of the dielectric function. The evolution of the energy of this transition with nitrogen concentration is studied and the origin of this transition is identified by analyzing the contributions to the dielectric function from different band combinations. The L_1c-derived states are shown to play an important role in the formation of the E+ transition, which was also suggested by recent experiments. At the same time the nitrogen-induced modification of the first conduction band of the host compound are also found to contribute significantly to the E+ transition. Further, the study of several model supercells demonstrated the significant influence of the nitrogen potential on the optical properties of the GaAsN system.
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Submitted 30 April, 2004;
originally announced May 2004.
