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Low-density silicon allotropes for photovoltaic applications
Authors:
Maximilian Amsler,
Silvana Botti,
Miguel A. L. Marques,
Thomas J. Lenosky,
Stefan Goedecker
Abstract:
Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hop** crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase…
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Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hop** crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total 44 metastable phases are presented, of which 11 exhibit direct or quasi-direct band-gaps in the range of $\approx$1.0-1.8 eV, close to the optimal Shockley-Queisser limit of $\approx$1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized.
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Submitted 28 April, 2015; v1 submitted 23 April, 2015;
originally announced April 2015.
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High pressure structures of disilane and their superconducting properties
Authors:
Maximilian Amsler,
José A. Flores-Livas,
Thomas J. Lenosky,
Lauri Lehtovaara,
Silvana Botti,
Miguel A. L. Marques,
Stefan Goedecker
Abstract:
A systematic ab initio search for low enthalpy phases of disilane (Si_2H_6) at high pressures was performed based on the minima hop** method. We found a novel metallic phase of disilane with Cmcm symmetry, which is enthalpically more favorable than the recently proposed structures of disilane up to 280 GPa, but revealing compositional instability below 190 GPa. The Cmcm phase has a moderate elec…
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A systematic ab initio search for low enthalpy phases of disilane (Si_2H_6) at high pressures was performed based on the minima hop** method. We found a novel metallic phase of disilane with Cmcm symmetry, which is enthalpically more favorable than the recently proposed structures of disilane up to 280 GPa, but revealing compositional instability below 190 GPa. The Cmcm phase has a moderate electron-phonon coupling yielding a superconducting transition temperature T_c of around 20 K at 100 GPa, decreasing to 13 K at 220 GPa. These values are an order of magnitude smaller than previously predicted T_c for disilane, and cast strong doubts on the possibility of high-T_c superconductivity in these systems as well as in other hydrogen-rich compounds under moderate pressure.
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Submitted 27 November, 2011;
originally announced November 2011.
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The energy landscape of silicon systems and its description by force fields, tight binding schemes, density functional methods and Quantum Monte Carlo methods
Authors:
S. Alireza Ghasemi,
Maximilian Amsler,
Richard G. Hennig,
Shantanu Roy,
Stefan Goedecker,
C. J. Umrigar,
Luigi Genovese,
Thomas J. Lenosky,
Tetsuya Morishita,
Kengo Nishio
Abstract:
The accuracy of the energy landscape of silicon systems obtained from various density functional methods, a tight binding scheme and force fields is studied. Quantum Monte Carlo results serve as quasi exact reference values. In addition to the well known accuracy of DFT methods for geometric ground states and metastable configurations we find that DFT methods give a similar accuracy for transiti…
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The accuracy of the energy landscape of silicon systems obtained from various density functional methods, a tight binding scheme and force fields is studied. Quantum Monte Carlo results serve as quasi exact reference values. In addition to the well known accuracy of DFT methods for geometric ground states and metastable configurations we find that DFT methods give a similar accuracy for transition states and thus a good overall description of the energy landscape. On the other hand, force fields give a very poor description of the landscape that are in most cases too rugged and contain many fake local minima and saddle points or ones that have the wrong height.
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Submitted 21 October, 2009;
originally announced October 2009.
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Classical potential describes martensitic phase transformations between the $α$, $β$ and $ω$ titanium phases
Authors:
R. G. Hennig,
T. J. Lenosky,
D. R. Trinkle,
S. P. Rudin,
J. W. Wilkins
Abstract:
A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density funct…
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A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density functional data for phonons, surface and stacking fault energies and energy barriers for homogeneous martensitic transformations. Molecular dynamics simulations map out the pressure-temperature phase diagram of titanium. For this potential the martensitic phase transformation between $α$ and $β$ appears at ambient pressure and 1200 K, between $α$ and $ω$ at ambient conditions, between $β$ and $ω$ at 1200 K and pressures above 8 GPa, and the triple point occurs at 8GPa and 1200 K. Molecular dynamics explorations of the dynamics of the martensitic $α-ω$ transformation show a fast-moving interface with a low interfacial energy of 30 meV/Å$^2$. The potential is applicable to the study of defects and phase transformations of Ti.
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Submitted 12 June, 2007;
originally announced June 2007.
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First-principles calculation of intrinsic defect formation volumes in silicon
Authors:
Scott A. Centoni,
Babak Sadigh,
George H. Gilmer,
Thomas J. Lenosky,
Tomas Diaz de la Rubia,
Charles B. Musgrave
Abstract:
We present an extensive first-principles study of the pressure dependence of the formation enthalpies of all the know vacancy and self-interstitial configurations in silicon, in each charge state from -2 through +2. The neutral vacancy is found to have a formation volume that varies markedly with pressure, leading to a remarkably large negative value (-0.68 atomic volumes) for the zero-pressure…
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We present an extensive first-principles study of the pressure dependence of the formation enthalpies of all the know vacancy and self-interstitial configurations in silicon, in each charge state from -2 through +2. The neutral vacancy is found to have a formation volume that varies markedly with pressure, leading to a remarkably large negative value (-0.68 atomic volumes) for the zero-pressure formation volume of a Frenkel pair (V + I). The interaction of volume and charge was examined, leading to pressure--Fermi level stability diagrams of the defects. Finally, we quantify the anisotropic nature of the lattice relaxation around the neutral defects.
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Submitted 12 August, 2005;
originally announced August 2005.
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Fast Diffusion Mechanism of Silicon Tri-interstitial Defects
Authors:
Yaojun A. Du,
Stephen A. Barr,
Kaden R. A. Hazzard,
Thomas J. Lenosky,
Richard G. Hennig,
John W. Wilkins
Abstract:
We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the uti…
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We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the utility of combining tight-binding molecular dynamics with \textit{ab initio} density functional calculations to probe diffusion mechanisms. Using density functional theory to obtain diffusion barriers and the prefactor, we calculate a diffusion constant of $ 4 \cdot 10^{-5} \exp (- 0.49 {\rm eV} / k_{B} T) {\rm cm^2/s} $. Because of the low diffusion barrier, $I_{3}^{b}$ diffusion may be an important process under conditions such as ion implantation that creates excess interstitials, hence favoring formation of interstitial clusters.
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Submitted 18 June, 2005; v1 submitted 18 March, 2005;
originally announced March 2005.
