Sliding-mediated ferroelectric phase transition in CuInP2S6 under pressure
Authors:
Zhou Zhou,
Jun-Jie Zhang,
Gemma F. Turner,
Stephen A. Moggach,
Yulia Lekina,
Samuel Morris,
Shun Wang,
Yiqi Hu,
Qiankun Li,
**shuo Xue,
Zhijian Feng,
Qingyu Yan,
Yuyan Weng,
Bin Xu,
Yong Fang,
Ze Xiang Shen,
Liang Fang,
Shuai Dong,
Lu You
Abstract:
Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials and heterostructures. By tuning the layer stacking pattern, symmetry-breaking and electric polarization can be created in otherwise non-polar crystals, whose polarization reversal depends on the interlayer sliding motion.…
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Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials and heterostructures. By tuning the layer stacking pattern, symmetry-breaking and electric polarization can be created in otherwise non-polar crystals, whose polarization reversal depends on the interlayer sliding motion. Herein, we demonstrate that in a vdW layered ferroelectric, its existing polarization is closely coupled to the interlayer sliding driven by hydrostatic pressure. Through combined structural, electrical, vibrational characterizations, and theoretical calculations, we clearly map out the structural evolution of CuInP2S6 under pressure. A tendency towards a high polarization state is observed in the low-pressure region, followed by an interlayer-sliding-mediated phase transition from a monoclinic to a trigonal phase. Along the transformation pathway, the displacive-instable Cu ion serves as a pivot point that regulates the interlayer interaction in response to external pressure. The rich phase diagram of CuInP2S6, which is enabled by stacking orders, sheds light on the physics of vdW ferroelectricity and opens an alternative route to tailoring long-range order in vdW layered crystals.
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Submitted 21 February, 2024;
originally announced February 2024.
Near-Unity Emitting, Widely Tailorable and Stable Exciton Concentrators Built from Doubly Gradient 2D Semiconductor Nanoplatelets
Authors:
Xiao Liang,
Emek G. Durmusoglu,
Maria Lunina,
Pedro Ludwig Hernandez-Martinez,
Vytautas Valuckas,
Fei Yan,
Yulia Lekina,
Vijay Kumar Sharma,
Tingting Yin,
Son Tung Ha,
Ze Xiang Shen,
Handong Sun,
Arseniy Kuznetsov,
Hilmi Volkan Demir
Abstract:
The strength of electrostatic interactions (EI) between electrons and holes within semiconductor nanocrystals profoundly impact the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the active medium. However, achieving a broad range, fine-tuning of the EI strength for specific optoelectronic applications is a daunting challenge, espec…
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The strength of electrostatic interactions (EI) between electrons and holes within semiconductor nanocrystals profoundly impact the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the active medium. However, achieving a broad range, fine-tuning of the EI strength for specific optoelectronic applications is a daunting challenge, especially in quasi 2-dimensional core-shell semiconductor nanoplatelets (NPLs), as the epitaxial growth of the inorganic shell along the direction of the thickness that solely contributes to the quantum confined effect significantly undermines the strength of the EI. Herein we propose and demonstrate a novel doubly-gradient (DG) core-shell architecture of semiconductor NPLs for on-demand tailoring of the EI strength by controlling the localized exciton concentration via in-plane architectural modulation, demonstrated by a wide tuning of radiative recombination rate and exciton binding energy. Moreover, these exciton-concentration-engineered DG NPLs also exhibit a near-unity quantum yield, remarkable thermal and photo stability, as well as considerably suppressed self-absorption. As proof-of-concept demonstrations, highly efficient color converters and high-performance light-emitting diodes (external quantum efficiency: 16.9%, maximum luminance: 43,000 cd/m2) have been achieved based on the DG NPLs. This work thus opens up new avenues for develo** high-performance colloidal optoelectronic device applications.
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Submitted 12 June, 2023;
originally announced June 2023.
