Showing 1–12 of 12 results for author: Lehtinen, O

Nanostructuring Graphene by Dense Electronic Excitation

Authors: O. Ochedowski, O. Lehtinen, U. Kaiser, A. Turchanin, B. Ban-d'Etat, H. Lebius, M. Karlusic, M. Jaksic, M. Schleberger

Abstract: The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution t… ▽ More The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution transmission electron microscopy as well as Raman spectroscopy. We show that the dense electronic excitation in the wake of the traversing ion yields characteristic nanostructures each of which may be fabricated by choosing the proper irradiation conditions. These nanostructures include unique morphologies such as closed bilayer edges with a given chirality or nanopores within supported as well as freestanding graphene. The length and orientation of the nanopore, and thus of the associated closed bilayer edge, may be simply controlled by the direction of the incoming ion beam. In freestanding graphene, swift heavy ion irradiation induces extremely small openings, offering the possibility to perforate graphene membranes in a controlled way. △ Less

Submitted 10 September, 2015; originally announced September 2015.

Comments: 16 pages, 5 figures, submitted to Nanotechnology

Square ice in graphene nanocapillaries

Authors: G. Algara-Siller, O. Lehtinen, F. C. Wang, R. R. Nair, U. Kaiser, H. A. Wu, I. V. Grigorieva, A. K. Geim

Abstract: Adsorbed layers of water are ubiquitously present at surfaces and fill in microscopic pores, playing a central role in many phenomena in such diverse fields as materials science, geology, biology, tribology, nanotechnology. Despite such importance, the crystal structure of nanoconfined water remains largely unknown. Here we report high-resolution electron microscopy of mono- and few- layers of wat… ▽ More Adsorbed layers of water are ubiquitously present at surfaces and fill in microscopic pores, playing a central role in many phenomena in such diverse fields as materials science, geology, biology, tribology, nanotechnology. Despite such importance, the crystal structure of nanoconfined water remains largely unknown. Here we report high-resolution electron microscopy of mono- and few- layers of water confined between two graphene sheets, an archetypal example of hydrophobic confinement. Confined water is found to form square ice at room temperature - a phase with symmetry principally different from the conventional tetrahedral geometry of hydrogen bonding. The square ice has a high packing density with a lattice constant of 2.83 angstrom and during TEM observation assembles in bi- and tri- layer crystallites exhibiting AA stacking. Our findings are important for understanding of interfacial phenomena and, in particular, shed light on ultrafast transport of water through hydrophobic nanocapillaries. Our MD simulations show that square ice is likely to be common inside hydrophobic nanochannels, independent of their exact atomic makeup. △ Less

Submitted 23 December, 2014; originally announced December 2014.

Journal ref: Nature 519, 443-445 (2015)

Implantation and atomic scale investigation of self-interstitials in graphene

Authors: Ossi Lehtinen, Nilesh Vats, Gerardo Algara-Siller, Pia Knyrim, Ute Kaiser

Abstract: Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies, grain boundaries, dislocations, and foreign atom substitutions. However, atomic resolution imaging of implanted self-interstitials has so far not been reported in any t… ▽ More Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies, grain boundaries, dislocations, and foreign atom substitutions. However, atomic resolution imaging of implanted self-interstitials has so far not been reported in any three- but also not in any two-dimensional material. Here, we deposit extra carbon into single-layer graphene at soft landing energies of ~1 eV using a standard carbon coater. We identify all the self-interstitial dimer structures theoretically predicted earlier, employing 80 kV aberration-corrected high-resolution transmission electron microscopy. We demonstrate accumulation of the interstitials into larger aggregates and dislocation dipoles, which we predict to have strong local curvature by atomistic modeling, and to be energetically favourable configurations as compared to isolated interstitial dimers. Our results contribute to the basic knowledge on crystallographic defects, and lay out a pathway into engineering the properties of graphene by pushing the crystal into a state of metastable supersaturation. △ Less

Submitted 16 January, 2015; v1 submitted 11 July, 2014; originally announced July 2014.

Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

Authors: Ossi Lehtinen, Dorin Geiger, Zhongbo Lee, Michale B. Whitwick, Ming-Wei Chen, Andras Kis, Ute Kaiser

Abstract: Here, we present a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects. The method is based on applying the same aberrations with the opposite phase to the Fourier transform of the recorded image intensity and subsequently inverting the Fourier transform. W… ▽ More Here, we present a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects. The method is based on applying the same aberrations with the opposite phase to the Fourier transform of the recorded image intensity and subsequently inverting the Fourier transform. We present the theoretical justification of the method and its verification based on simulated images in the case of low-order anti-symmetric aberrations. Ultimately the method is applied to experimental hardware aberration-corrected HRTEM images of single-layer graphene and MoSe2 resulting in images with strongly reduced residual low-order aberrations, and consequently improved interpretability. Alternatively, this method can be used to estimate by trial and error the residual anti-symmetric aberrations in HRTEM images of weakly scattering objects. △ Less

Submitted 16 January, 2015; v1 submitted 8 July, 2014; originally announced July 2014.

Non-invasive transmission electron microscopy of vacancy defects in graphene produced by ion irradiation

Authors: Ossi Lehtinen, I-Ling Tsai, Rashid Jalil, Rahul R. Nair, Juhani Keinonen, Ute Kaiser, Irina V. Grigorieva

Abstract: Irradiation with high-energy ions has been widely suggested as a tool to engineer properties of graphene. Experiments show that it indeed has a strong effect on its transport, magnetic and mechanical characteristics. However, to use ion irradiation as an engineering tool requires understanding of the type and detailed characteristics of the produced defects which is still lacking, as the use of hi… ▽ More Irradiation with high-energy ions has been widely suggested as a tool to engineer properties of graphene. Experiments show that it indeed has a strong effect on its transport, magnetic and mechanical characteristics. However, to use ion irradiation as an engineering tool requires understanding of the type and detailed characteristics of the produced defects which is still lacking, as the use of high-resolution transmission electron microscopy (HRTEM) - the only technique allowing direct imaging of atomic-scale defects - often modifies or even creates defects during imaging, thus making it impossible to determine the intrinsic atomic structure. Here we show that encapsulating the studied graphene sample between two other (protective) graphene sheets allows non-invasive HRTEM imaging and reliable identification of atomic-scale defects. Using this simple technique, we demonstrate that proton irradiation of graphene produces reconstructed monovacancies, which explains the profound effect that such defects have on magnetic and transport properties. This finding resolves the existing uncertainty with regard to the effect of ion irradiation on the electronic structure of graphene. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: 18 pages, 6 figures and Supplementary Information (4 supplementary figures)

Journal ref: Nanoscale 6, 6569 (2014)

The pristine atomic structure of MoS2 monolayer protected from electron radiation damage by graphene

Authors: Gerardo Algara-Siller, Simon Kurasch, Mona Sedighi, Ossi Lehtinen, Ute Kaiser

Abstract: Materials can, in principle, be imaged at the level of individual atoms with aberration corrected transmission electron microscopy. However, such resolution can be attained only with very high electron doses. Consequently, radiation damage is often the limiting factor when characterizing sensitive materials. Here, we demonstrate a simple and effective method to increase the electron radiation tole… ▽ More Materials can, in principle, be imaged at the level of individual atoms with aberration corrected transmission electron microscopy. However, such resolution can be attained only with very high electron doses. Consequently, radiation damage is often the limiting factor when characterizing sensitive materials. Here, we demonstrate a simple and effective method to increase the electron radiation tolerance of materials by using graphene as protective coating. This leads to an improvement of three orders of magnitude in the radiation tolerance of monolayer MoS2. Further on, we construct samples in different heterostructure configurations to separate the contributions of different radiation damage mechanisms. △ Less

Submitted 9 October, 2013; originally announced October 2013.

Structural manipulation of the graphene/metal-interface with Ar+ irradiation

Authors: E. H. Åhlgren, S. K. Hämäläinen, O. Lehtinen, P. Liljeroth, J. Kotakoski

Abstract: Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer simulations and scanning-probe microscopy, we show that the resulting disorder manifests mainly in the forms of intercalated metal adatoms and vacancy-type defects in gra… ▽ More Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer simulations and scanning-probe microscopy, we show that the resulting disorder manifests mainly in the forms of intercalated metal adatoms and vacancy-type defects in graphene. One prominent feature at higher irradiation energies (from 1 keV up) is the formation of line-like depressions, which consist of sequential graphene defects created by the ion channeling within the interface -- much like a stone skip** on water. Lower energies result in simpler defects, down to 100 eV where more than one defect in every three is a graphene single vacancy. △ Less

Submitted 7 October, 2013; originally announced October 2013.

Journal ref: Phys. Rev. B 88, 155419 (2013)

Dual origin of defect magnetism in graphene and its reversible switching by molecular do**

Authors: R. R. Nair, I-Ling Tsai, M. Sepioni, O. Lehtinen, J. Keinonen, A. V. Krasheninnikov, A. H. Castro Neto, M. I. Katsnelson, A. K. Geim, I. V. Grigorieva

Abstract: A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and t… ▽ More A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that adatoms magnetism in graphene is itinerant and can be controlled by do**, so that magnetic moments can be switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions: one coming from the same itinerant magnetism and the other due to broken bonds. Our work suggests that magnetic response of graphene can be controlled by the field effect, similar to its transport and optical properties, and that spin diffusion length can be significantly enhanced above a certain carrier density. △ Less

Submitted 10 May, 2013; v1 submitted 31 January, 2013; originally announced January 2013.

Comments: 15 pages, 8 figures

Journal ref: Nature Communications 4, 2010 (2013)

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and do**

Authors: Hannu-Pekka Komsa, Jani Kotakoski, Simon Kurasch, Ossi Lehtinen, Ute Kaiser, Arkady V. Krasheninnikov

Abstract: Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce… ▽ More Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Journal ref: Phys. Rev. Lett 109, 035503 (2012)

Ion irradiation tolerance of graphene as studied by atomistic simulations

Authors: E. H. Åhlgren, J. Kotakoski, O. Lehtinen, A. V. Krasheninnikov

Abstract: As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irradiation-induced damage in the graphene membrane may give rise to its mechanical failure. Using atomistic simulations, we demonstrate that irradiated g… ▽ More As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irradiation-induced damage in the graphene membrane may give rise to its mechanical failure. Using atomistic simulations, we demonstrate that irradiated graphene even with a high vacancy concentration does not show signs of such instability, indicating a considerable robustness of graphene windows. We further show that upper and lower estimates for the irradiation damage in graphene can be set using a simple model. △ Less

Submitted 8 May, 2012; originally announced May 2012.

Journal ref: Appl. Phys. Lett., 100, 233108 (2012)

Spin-half paramagnetism in graphene induced by point defects

Authors: R. R. Nair, M. Sepioni, I-Ling Tsai, O. Lehtinen, J. Keinonen, A. V. Krasheninnikov, T. Thomson, A. K. Geim, I. V. Grigorieva

Abstract: Using magnetization measurements, we show that point defects in graphene - fluorine adatoms and irradiation defects (vacancies) - carry magnetic moments with spin 1/2. Both types of defects lead to notable paramagnetism but no magnetic ordering could be detected down to liquid helium temperatures. The induced paramagnetism dominates graphene's low-temperature magnetic properties despite the fact t… ▽ More Using magnetization measurements, we show that point defects in graphene - fluorine adatoms and irradiation defects (vacancies) - carry magnetic moments with spin 1/2. Both types of defects lead to notable paramagnetism but no magnetic ordering could be detected down to liquid helium temperatures. The induced paramagnetism dominates graphene's low-temperature magnetic properties despite the fact that maximum response we could achieve was limited to one moment per approximately 1000 carbon atoms. This limitation is explained by clustering of adatoms and, for the case of vacancies, by losing graphene's structural stability. △ Less

Submitted 26 January, 2012; v1 submitted 16 November, 2011; originally announced November 2011.

Comments: 14 pages, 14 figures

Journal ref: Nature Physics, vol. 8, 199 (2012)

Cutting and controlled modification of graphene with ion beams

Authors: O. Lehtinen, J. Kotakoski, A. V. Krasheninnikov, J. Keinonen

Abstract: Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at ma… ▽ More Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at macroscopic time scales. Impacts of He, Ne, Ar, Kr, Xe and Ga ions with kinetic energies ranging from tens of eV to 10 MeV and angles of incidence between 0\circ and 88\circ are studied. Our results provide microscopic insights into the response of graphene to ion irradiation and can directly be used for the optimization of graphene cutting and patterning with focused ion beams. △ Less

Submitted 3 February, 2011; originally announced February 2011.

Journal ref: Nanotechnology 22, 175306 (2011)