Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer
Authors:
Eric W. Blanton,
Michael J. Motala,
Timothy A. Prusnick,
Albert Hilton,
Jeff L. Brown,
Arkka Bhattacharyya,
Sriram Krishnamoorthy,
Kevin Leedy,
Nicholas R. Glavin,
Michael Snure
Abstract:
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and two-dimensional (2D) materials, using…
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Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and two-dimensional (2D) materials, using 2D boron nitride (BN)-on-sapphire templates is demonstrated. The van der Waals BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for van der Waals bonding. A tensilely-stressed Ni layer sputtered on top of the film induces controlled spalling fracture which propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity is greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a selected area lift-off technique is developed which allows for isolation and transfer of individual devices while maximizing wafer area use and minimizing extra alignment steps in the integration process.
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Submitted 14 May, 2021;
originally announced May 2021.
Experimental Observation of Strong Coupling Between an Epsilon-Near-Zero Mode in a Deep Subwavelength Nanofilm and a Gap Plasmon Mode
Authors:
Joshua R. Hendrickson,
Shivashankar Vangala,
Chandriker K. Dass,
Ricky Gibson,
Kevin Leedy,
Dennis Walker,
Justin W. Cleary,
Ting S. Luk,
Junpeng Guo
Abstract:
Strong coupling is a phenomenon which occurs when the interaction between two resonance systems is so strong that the oscillatory energy exchange between them exceeds all dissipative loss channels. Each resonance can then no longer be described individually but only as a part of the coupled, hybrid system. Here, we show that strong coupling can occur in a deep subwavelength nanofilm supporting an…
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Strong coupling is a phenomenon which occurs when the interaction between two resonance systems is so strong that the oscillatory energy exchange between them exceeds all dissipative loss channels. Each resonance can then no longer be described individually but only as a part of the coupled, hybrid system. Here, we show that strong coupling can occur in a deep subwavelength nanofilm supporting an epsilon near zero mode which is integrated into a metal-insulator-metal gap plasmon structure. To generate an epsilon near zero mode resonance in the short-wave infrared region, an indium tin oxide nanofilm of ~lambda/100 thickness is used. A polariton splitting value of 27%, corresponding to a normalized coupling rate of 0.135, is experimentally demonstrated. Simulations indicate that much larger coupling rates, well within the ultra-strong regime where the energy exchange rate is comparable with the frequency of light, are possible.
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Submitted 9 January, 2018;
originally announced January 2018.
