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Emerging magnetism and anomalous Hall effect in iridate-manganite heterostructures
Authors:
John Nichols,
Xiang Gao,
Shinbuhm Lee,
Tricia L. Meyer,
John W. Freeland,
Valeria Lauter,
Di Yi,
Jian Liu,
Daniel Haskel,
Jonathan R. Petrie,
Er-Jia Guo,
Andreas Herklotz,
Dongkyu Lee,
Thomas Z. Ward,
Gyula Eres,
Michael R. Fitzsimmons,
Ho Nyung Lee
Abstract:
Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong, such as 3d and 5d complex oxide superlattices, have revealed properties that only slightly differ from the bulk ones of the constituent materials. Here, we observe…
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Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong, such as 3d and 5d complex oxide superlattices, have revealed properties that only slightly differ from the bulk ones of the constituent materials. Here, we observe that the interfacial coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnetic metal SrIrO3 is enormously strong, yielding an anomalous Hall response as the result of charge transfer driven interfacial ferromagnetism. These findings show that low dimensional spin-orbit entangled 3d-5d interfaces provide an avenue to uncover technologically relevant physical phenomena unattainable in bulk materials.
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Submitted 7 September, 2016;
originally announced September 2016.
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Enhancing Perovskite Electrocatalysis through Strain Tuning of the Oxygen Deficiency
Authors:
Jonathan R. Petrie,
Hyoungjeen Jeen,
Sara C. Barron,
Tricia L. Meyer,
Ho Nyung Lee
Abstract:
Oxygen vacancies in transition metal oxides facilitate catalysis critical for energy storage and generation. However, it has proven elusive to promote vacancies at the lower temperatures required for operation in devices such as metal-air batteries and portable fuel cells. Here, we use thin films of the perovskite-based strontium cobaltite (SrCoOx) to show that epitaxial strain is a powerful tool…
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Oxygen vacancies in transition metal oxides facilitate catalysis critical for energy storage and generation. However, it has proven elusive to promote vacancies at the lower temperatures required for operation in devices such as metal-air batteries and portable fuel cells. Here, we use thin films of the perovskite-based strontium cobaltite (SrCoOx) to show that epitaxial strain is a powerful tool towards manipulating the oxygen content under conditions consistent with the oxygen evolution reaction, yielding increasingly oxygen deficient states in an environment where the cobaltite would normally be fully oxidized. The additional oxygen vacancies created through tensile strain enhance the cobaltite catalytic activity towards this important reaction by over an order of magnitude, equaling that of precious metal catalysts, including IrO2. Our findings demonstrate that strain in these oxides can dictate oxygen stoichiometry independent of ambient conditions, allowing unprecedented control over oxygen vacancies essential in catalysis near room temperature.
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Submitted 7 June, 2016;
originally announced June 2016.
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Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth
Authors:
Yang Wang,
Shinbuhm Lee,
Paolo Vilmercati,
Ho Nyung Lee,
Hanno H. Weitering,
Paul C. Snijders
Abstract:
The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate…
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The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatment in air. We tentatively ascribe this result to the decrease in surface energy associated with the surface reconstruction, which removes the driving force for faceting. Despite the narrow temperature window where this morphology can initially be formed, we demonstrate that it persists in homoepitaxial growth of TiO2(001) thin films. The stabilization of surface reconstructions that prevent faceting of high-surface-energy crystal faces may offer a promising avenue towards the realization of a wider range of high quality epitaxial transition metal oxide heterostructures.
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Submitted 17 February, 2016;
originally announced February 2016.
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Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films
Authors:
Jonathan R. Petrie,
Chandrima Mitra,
Hyoungjeen Jeen,
Woo Seok Choi,
Tricia L. Meyer,
Fernando A. Reboredo,
John W. Freeland,
Gyula Eres,
Ho Nyung Lee
Abstract:
The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxia…
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The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ~30%, resulting in a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.
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Submitted 12 February, 2016;
originally announced February 2016.
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Enhanced bifunctional oxygen catalysis in strained LaNiO3 perovskites
Authors:
Jonathan R Petrie,
Valentino R. Cooper,
John W Freeland,
Tricia L Meyer,
Zhiyong Zhang,
Daniel A. Lutterman,
Ho Nyung Lee
Abstract:
Strain is known to greatly influence low temperature oxygen electrocatalysis on noble metal films, leading to significant enhancements in bifunctional activity essential for fuel cells and metal-air batteries. However, its catalytic impact on transition metal oxide thin films, such as perovskites, is not widely understood. Here, we epitaxially strain the conducting perovskite LaNiO3 to systematica…
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Strain is known to greatly influence low temperature oxygen electrocatalysis on noble metal films, leading to significant enhancements in bifunctional activity essential for fuel cells and metal-air batteries. However, its catalytic impact on transition metal oxide thin films, such as perovskites, is not widely understood. Here, we epitaxially strain the conducting perovskite LaNiO3 to systematically determine its influence on both the oxygen reduction and oxygen evolution reaction. Uniquely, we found that compressive strain could significantly enhance both reactions, yielding a bifunctional catalyst that surpasses the performance of noble metals such as Pt. We attribute the improved bifunctionality to strain-induced splitting of the eg orbitals, which can customize orbital asymmetry at the surface. Analogous to strain-induced shifts in the d-band center of noble metals relative to Fermi level, such splitting can dramatically affect catalytic activity in this perovskite and other potentially more active oxides.
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Submitted 11 February, 2016;
originally announced February 2016.
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Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum
Authors:
Ho Nyung Lee,
Sung S. Ambrose Seo,
Woo Seok Choi,
Christopher M. Rouleau
Abstract:
In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a cha…
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In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects, even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well.
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Submitted 11 February, 2016;
originally announced February 2016.
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Structural evolution of epitaxial SrCoOx films near topotactic phase transition
Authors:
Hyoungjeen Jeen,
Ho Nyung Lee
Abstract:
Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we us…
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Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.
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Submitted 18 December, 2015;
originally announced December 2015.
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Symmetry-driven atomic rearrangement at a brownmillerite-perovskite interface
Authors:
Tricia L. Meyer,
Hyoungjeen Jeen,
Xiang Gao,
Jonathan R. Petrie,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped…
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Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped out the interfacial connectivity of atoms of two dissimilar materials, the perovskite SrTiO3 and the brownmillerite SrCoO2.5, using high resolution scanning transmission electron microscopy and geometric phase analysis. We observed unique symmetry-mismatch driven atomic displacements restricted to only the first few atomic layers, which can critically modify the properties of the system. Provided that SrCoO2.5 is a promising energy material due to its open framework structure, the improved understanding of the interfacial structure on the atomic level can lead to the rational design of novel oxide heterostructures.
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Submitted 19 November, 2015;
originally announced November 2015.
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Structural and Magnetic Phase Transitions in CeCu$_{6-x}T_x$ ($T$ = Ag, Pd)
Authors:
L. Poudel,
C. de la Cruz,
E. A. Payzant,
A. F. May,
M. Koehler,
V. O. Garlea,
A. E. Taylor,
D. S. Parker,
H. B. Cao,
M. A. McGuire,
W. Tian,
M. Matsuda,
H. Jeen,
H. N. Lee,
T. Hong,
S. Calder,
H. D. Zhou,
M. D. Lumsden,
V. Keppens,
D. Mandrus,
A. D. Christianson
Abstract:
The structural and the magnetic properties of CeCu$_{6-x}$Ag$_x$ (0 $\leq$ $x$ $\leq$ 0.85) and CeCu$_{6-x}$Pd$_x$ (0 $\leq$ $x$ $\leq$ 0.4) have been studied using neutron diffraction, resonant ultrasound spectroscopy (RUS), heat capacity, x-ray diffraction measurements and first principles calculations. The structural and magnetic phase diagrams of CeCu$_{6-x}$Ag$_x$ and CeCu$_{6-x}$Pd$_x$ as a…
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The structural and the magnetic properties of CeCu$_{6-x}$Ag$_x$ (0 $\leq$ $x$ $\leq$ 0.85) and CeCu$_{6-x}$Pd$_x$ (0 $\leq$ $x$ $\leq$ 0.4) have been studied using neutron diffraction, resonant ultrasound spectroscopy (RUS), heat capacity, x-ray diffraction measurements and first principles calculations. The structural and magnetic phase diagrams of CeCu$_{6-x}$Ag$_x$ and CeCu$_{6-x}$Pd$_x$ as a function of Ag/Pd composition are reported. The end member, CeCu$_6$, undergoes a structural phase transition from an orthorhombic ($Pnma$) to a monoclinic ($P2_1/c$) phase at 240 K. In CeCu$_{6-x}$Ag$_x$, the structural phase transition temperature (${T_{s}}$) decreases linearly with Ag concentration and extrapolates to zero at $x_{S}$ $\approx$ 0.1. The structural transition in CeCu$_{6-x}$Pd$_x$ remains unperturbed with Pd substitution within the range of our study. The lattice constant $b$ slightly decreases with Ag/Pd do**, whereas, $a$ and $c$ increase with an overall increase in the unit cell volume. Both systems, CeCu$_{6-x}$Ag$_x$ and CeCu$_{6-x}$Pd$_x$, exhibit a magnetic quantum critical point (QCP), at $x$ $\approx$ 0.2 and $x$ $\approx$ 0.05 respectively. Near the QCP, long range antiferromagnetic ordering takes place at an incommensurate wave vector ($δ_1$ 0 $δ_2$) where $δ_1 \sim 0.62$, $δ_2 \sim 0.25$, $x$ = 0.125 for CeCu$_{6-x}$Pd$_x$ and $δ_1 \sim 0.64$, $δ_2 \sim 0.3$, $x$ = 0.3 for CeCu$_{6-x}$Ag$_x$. The magnetic structure consists of an amplitude modulation of the Ce-moments which are aligned along the $c$-axis of the orthorhombic unit cell.
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Submitted 25 November, 2015; v1 submitted 1 October, 2015;
originally announced October 2015.
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Epitaxial stabilization and phase instability of VO2 polymorphs
Authors:
Shinbuhm Lee,
Ilia N. Ivanov,
Jong K. Keum,
Ho Nyung Lee
Abstract:
The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we rep…
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The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of those metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs could be on the verge of phase transitions when heated as low as ~400 oC. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.
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Submitted 1 September, 2015;
originally announced September 2015.
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Selective control of oxygen sublattice stability by epitaxial strain in Ruddlesden-Popper films
Authors:
Tricia L. Meyer,
Lu Jiang,
Jaekwang Lee,
Mina Yoon,
John W. Freeland,
Jae Hyuck Jang,
Dilpuneet S. Aidhy,
Albina Borisevich,
Matthew Chisholm,
Takeshi Egami,
Ho Nyung Lee
Abstract:
Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current unders…
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Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current understanding of the lattice behavior in oxygen-deficient films becomes disputable when considering compounds containing different bonding environments or atomic layering. Moreover, tensile strain has recently been discovered to stabilize oxygen vacancies in epitaxial films, which further complicates the interpretation of lattice behavior resulting from their appearance. Here, we report on the selective strain control of oxygen vacancy formation and resulting lattice responses in the layered, Ruddlesden-Popper phases, La1.85Sr0.15CuO4. We found that a drastically reduced Gibbs free energy for oxygen vacancy formation near the typical growth temperature for tensile-strained epitaxial LSCO accounts for the large oxygen non-stoichiometry. Additionally, oxygen vacancies form preferentially in the equatorial position of the CuO2 plane, leading to a lattice contraction, rather than the expected expansion, observed with apical oxygen vacancies. Since oxygen stoichiometry plays a key role in determining the physical properties of many complex oxides, the strong strain coupling of oxygen nonstoichiometry and the unusual structural response reported here can provide new perspectives and understanding to the structure and property relationships of many other functional oxide materials.
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Submitted 27 August, 2015;
originally announced August 2015.
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Stabilization of highly polar BiFeO$_3$-like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattices
Authors:
Hongwei Wang,
Jianguo Wen,
Dean J. Miller,
Qibin Zhou,
Mohan Chen,
Ho Nyung Lee,
Karin M. Rabe,
Xifan Wu
Abstract:
In ABO3 perovskites, oxygen octahedron rotations are common structural distortions that can promote large ferroelectricity in BiFeO3 with an R3c structure [1], but suppress ferroelectricity in CaTiO3 with a Pbnm symmetry [2]. For many CaTiO3-like perovskites, the BiFeO3 structure is a metastable phase. Here, we report the stabilization of the highly-polar BiFeO3-like phase of CaTiO3 in a BaTiO3/Ca…
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In ABO3 perovskites, oxygen octahedron rotations are common structural distortions that can promote large ferroelectricity in BiFeO3 with an R3c structure [1], but suppress ferroelectricity in CaTiO3 with a Pbnm symmetry [2]. For many CaTiO3-like perovskites, the BiFeO3 structure is a metastable phase. Here, we report the stabilization of the highly-polar BiFeO3-like phase of CaTiO3 in a BaTiO3/CaTiO3 superlattice grown on a SrTiO3 substrate. The stabilization is realized by a reconstruction of oxygen octahedron rotations at the interface from the pattern of nonpolar bulk CaTiO3 to a different pattern that is characteristic of a BiFeO3 phase. The reconstruction is interpreted through a combination of amplitude-contrast sub 0.1nm high-resolution transmission electron microscopy and first-principles theories of the structure, energetics, and polarization of the superlattice and its constituents. We further predict a number of new artificial ferroelectric materials demonstrating that nonpolar perovskites can be turned into ferroelectrics via this interface mechanism. Therefore, a large number of perovskites with the CaTiO3 structure type, which include many magnetic representatives, are now good candidates as novel highly-polar multiferroic materials [3].
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Submitted 15 February, 2016; v1 submitted 1 July, 2015;
originally announced July 2015.
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Resonant tunneling in a quantum oxide superlattice
Authors:
Woo Seok Choi,
Sang A. Lee,
Jeong Ho You,
Suyoun Lee,
Ho Nyung Lee
Abstract:
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. He…
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Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.
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Submitted 24 June, 2015;
originally announced June 2015.
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Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films
Authors:
Woo Seok Choi,
Ho Nyung Lee
Abstract:
We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivil…
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We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition metal oxides.
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Submitted 11 May, 2015;
originally announced May 2015.
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Dimensionality Control of d-orbital Occupation in Oxide Superlattices
Authors:
Da Woon Jeong,
Woo Seok Choi,
Satoshi Okamoto,
Jae-Young Kim,
Kyung Wan Kim,
Soon Jae Moon,
Deok-Yong Cho,
Ho Nyung Lee,
Tae Won Noh
Abstract:
Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and develo** novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator…
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Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and develo** novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator LaAlO3. As the LaCoO3 sublayer thickness approaches its fundamental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulator, in which both t2g and eg orbitals are partially filled, to a band insulator by completely filling (emptying) the t2g (eg) orbitals. We found the reduction of dimensionality has a profound effect on the electronic structure evolution, which is, whereas, insensitive to the epitaxial strain. The remarkable orbital controllability shown here offers a promising pathway for novel applications such as catalysis and photovoltaics, where the energy of d level is an essential parameter.
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Submitted 22 December, 2014;
originally announced December 2014.
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Growth control of the oxidation state in vanadium oxide thin films
Authors:
Shinbuhm Lee,
Tricia L. Meyer,
Sungkyun Park,
Takeshi Egami,
Ho Nyung Lee
Abstract:
Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good…
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Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2(+3)O3, V(+4)O2, and V2(+5)O5. A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (< 10 mTorr) or higher P(O2) (> 25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.
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Submitted 28 November, 2014;
originally announced November 2014.
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Amplitude Contrast Imaging in High-Resolution Transmission Electron Microscopy of Ferroelectric Superlattice Film
Authors:
Jianguo Wen,
Dean J. Miller,
Nestor J. Zaluzec,
Russell E. Cook,
Ho Nyung Lee,
Xifan Wu
Abstract:
To date, high-resolution electron microscopy has largely relied on using the phase of the exit wave function at the exit surface to form a high-resolution electron microscopic image. We have for the first time used chromatic aberration correction to implement a new imaging mode to achieve amplitude contrast imaging in high-resolution electron microscopy, allowing us to obtain directly interpretabl…
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To date, high-resolution electron microscopy has largely relied on using the phase of the exit wave function at the exit surface to form a high-resolution electron microscopic image. We have for the first time used chromatic aberration correction to implement a new imaging mode to achieve amplitude contrast imaging in high-resolution electron microscopy, allowing us to obtain directly interpretable high-resolution electron microscopic images with discrimination between light and heavy atomic columns. Using this imaging approach, we have successfully visualized the atomic structure in a BaTiO3/CaTiO3 superlattice with high spatial accuracy and discrimination between Ba and Ca columns, providing direct visualization of the Ca and Ba associated oxygen octahedral tilt that controls ferroelectric behavior in these superlattice structures. Furthermore, this approach offers new opportunities to unravel the structure in a wide range of materials, especially complex oxides with exotic behaviors based on specific structural arrangements.
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Submitted 31 August, 2014;
originally announced September 2014.
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Oxygen diffusion pathways in brownmillerite SrCoO2.5: Influence of structure and chemical potential
Authors:
Chandrima Mitra,
Tricia Meyer,
Ho Nyung Lee,
Fernando A. Reboredo
Abstract:
To design and discover new materials for next-generation energy materials such as solid-oxide fuel cells (SOFCs), a fundamental understanding of their ionic properties and behaviors is essential. The potential applicability of a material for SOFCs is critically determined by the activation energy barrier of oxygen along various diffusion pathways. In this work, we investigate interstitial-oxygen (…
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To design and discover new materials for next-generation energy materials such as solid-oxide fuel cells (SOFCs), a fundamental understanding of their ionic properties and behaviors is essential. The potential applicability of a material for SOFCs is critically determined by the activation energy barrier of oxygen along various diffusion pathways. In this work, we investigate interstitial-oxygen (Oi) diffusion in brownmillerite oxide SrCoO2.5, employing a first-principles approach. Our calculations indicate highly anisotropic ionic diffusion pathways, which result from its anisotropic crystal structure. The one-dimensional-ordered oxygen vacancy channels are found to provide the easiest diffusion pathway with an activation energy barrier height of 0.62 eV. The directions perpendicular to the vacancy channels have higher energy barriers for Oint diffusion. In addition, we have studied migration barriers for oxygen vacancies that could be present as point defects within the material. This in turn could also facilitate the transport of oxygen. Interestingly, for oxygen vacancies, the lowest barrier height was found to occur within the octahedral layer with an energy of 0.82 eV. Our results imply that interstitial migration would be highly one-dimensional in nature. Oxygen vacancy transport, on the other hand, could preferentially occur in the two-dimensional octahedral plane.
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Submitted 29 August, 2014;
originally announced August 2014.
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Thermopower enhancement by fractional layer control in 2D oxide superlattices
Authors:
Woo Seok Choi,
Hiromichi Ohta,
Ho Nyung Lee
Abstract:
We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally δ-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 δ-doped layer, we demonstrate that a thermopower…
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We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally δ-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 δ-doped layer, we demonstrate that a thermopower as large as 408 μV K-1 can be reached. This approach also yielded a power factor of the 2D carriers 117 μWcm-1K-2, which is one of the largest reported values from transition metal oxide based materials. The promising result can be attributed to the anisotropic band structure in the 2D system, indicating that δ-doped oxide superlattices can be a good candidate for advanced thermoelectrics.
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Submitted 2 August, 2014;
originally announced August 2014.
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Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures
Authors:
Lu Jiang,
Woo Seok Choi,
Hyoungjeen Jeen,
Shuai Dong,
Yunseok Kim,
Myung-Geun Han,
Yimei Zhu,
Sergei V. Kalinin,
Elbio Dagotto,
Takeshi Egami,
Ho Nyung Lee
Abstract:
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization…
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The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization states can be further enhanced by the electrostatic modification in the correlated electron oxide electrodes, and that FTJs with nanometer thin layers can effectively produce a considerably large electroresistance ratio at room temperature. To understand these surprising results, we employed an additional control parameter, which is related to the crossing of electronic and magnetic phase boundaries of the correlated electron oxide. The FE-induced phase modulation at the heterointerface ultimately results in an enhanced electroresistance effect. Our study highlights that the strong coupling between degrees of freedom across heterointerfaces could yield versatile and novel applications in oxide electronics.
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Submitted 19 November, 2013;
originally announced November 2013.
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Orienting oxygen vacancies for fast catalytic reaction
Authors:
Hyoungjeen Jeen,
Zhonghe Bi,
Woo Seok Choi,
Matthew F. Chisholm,
Craig A. Bridges,
M. Parans Paranthaman,
Ho Nyung Lee
Abstract:
Catalysis is indispensable to chemical processes and relevant to many aspects of modern life. Owing to the intriguing electronic structures and good ionic properties, multivalent transition metal oxides have attracted attention as key catalysts for various energy and environmental applications. Here, we demonstrate that brownmillerite strontium cobaltite (SrCoO2.5) can be a good cathode material f…
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Catalysis is indispensable to chemical processes and relevant to many aspects of modern life. Owing to the intriguing electronic structures and good ionic properties, multivalent transition metal oxides have attracted attention as key catalysts for various energy and environmental applications. Here, we demonstrate that brownmillerite strontium cobaltite (SrCoO2.5) can be a good cathode material for sold oxide fuel cells and rechargeable batteries due to the open oxygen frameworks. When the orientation of oxygen vacancy channels (OVCs) is properly controlled, one can drastically increase the surface oxygen exchange rate approximately up to two orders of magnitude. The improved oxygen reduction kinetics is attributed to a substantial decrease in the thermal activation energy. Importantly, the strong enhancement of crystallographic orientation-dependent oxygen reduction reaction required the creation of neither structural disorders nor chemical do**. Thus, our epitaxial approach can pave a novel pathway to providing precise interpretation of oxygen reduction reactions and to develo** oxide-based energy materials.
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Submitted 3 October, 2013;
originally announced October 2013.
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Ground state and Spin-Wave dynamics in Brownmillerite SrCoO2.5, A combined Hybrid Functional and LSDAU study
Authors:
Chandrima Mitra,
Randy S. Fishman,
Satoshi Okamoto,
Ho Nyung Lee,
Fernando A. Reboredo
Abstract:
We theoretically investigate the ground state magnetic properties of the brownmillerite phase of SrCoO2.5. Strong correlations within Co d electrons are treated within the local spin density approximations of Density Functional theory (DFT) with Hubbard U corrections (LSDAU) and results are compared with the Heyd Scuzeria Ernzerhof (HSE) functional. The parameters computed with a U value of 7.5 eV…
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We theoretically investigate the ground state magnetic properties of the brownmillerite phase of SrCoO2.5. Strong correlations within Co d electrons are treated within the local spin density approximations of Density Functional theory (DFT) with Hubbard U corrections (LSDAU) and results are compared with the Heyd Scuzeria Ernzerhof (HSE) functional. The parameters computed with a U value of 7.5 eV are found to match closely to those computed within the HSE functional. A G type antiferromagnetic structure is found to be the most stable one, consistent with experimental observation. By map** the total energies of different magnetic configurations onto a Heisenberg Hamiltonian we compute the magnetic exchange interaction parameters, J, between the nearest neighbor Co atoms. The J s obtained are then used to compute the spin wave frequencies and inelastic neutron scattering intensities. Among four spin wave branches, the lowest energy mode was found to have the largest scattering intensity at the magnetic zone center, while the other modes becomes dominant at different momenta. These predictions can be tested by experimentally.
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Submitted 20 September, 2013;
originally announced September 2013.
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Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
Authors:
Hyoungjeen Jeen,
Woo Seok Choi,
Michael D. Biegalski,
Chad M. Folkman,
I-Cheng Tung,
Dillon D. Fong,
John W. Freeland,
Dongwon Shin,
Hiromichi Ohta,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here…
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Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here, we report a significant lowering of the redox temperature by epitaxial stabilization of strontium cobaltites (SrCoOx) grown directly as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5. Importantly, these two phases can be reversibly switched at a remarkably reduced temperature (200~300 °C) in a considerably short time (< 1 min) without destroying the parent framework. The fast, low temperature redox activity in SrCoO3-δ is attributed to a small Gibbs free energy difference between two topotatic phases. Our findings thus provide useful information for develo** highly sensitive electrochemical sensors and low temperature cathode materials.
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Submitted 26 August, 2013;
originally announced August 2013.
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Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films
Authors:
O. Kelekci,
H. N. Lee,
T. W. Kim,
H. Noh
Abstract:
We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage…
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We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to 1/d^1.3, which can be conjectured from the expected temperature gradient along the sample from the heat equation.
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Submitted 26 August, 2013;
originally announced August 2013.
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Reversal of the lattice structure in SrCoOx epitaxial thin films studied by real-time optical spectroscopy and first-principles calculations
Authors:
Woo Seok Choi,
Hyoungjeen Jeen,
Jun Hee Lee,
S. S. Ambrose Seo,
Valentino R. Cooper,
Karin M. Rabe,
Ho Nyung Lee
Abstract:
Using real-time spectroscopic ellipsometry, we directly observed a reversible lattice and electronic structure evolution in SrCoOx (x = 2.5 - 3) epitaxial thin films. Drastically different electronic ground states, which are extremely susceptible to the oxygen content x, are found in the two topotactic phases, i.e. the brownmillerite SrCoO2.5 and the perovskite SrCoO3. First principles calculation…
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Using real-time spectroscopic ellipsometry, we directly observed a reversible lattice and electronic structure evolution in SrCoOx (x = 2.5 - 3) epitaxial thin films. Drastically different electronic ground states, which are extremely susceptible to the oxygen content x, are found in the two topotactic phases, i.e. the brownmillerite SrCoO2.5 and the perovskite SrCoO3. First principles calculations confirmed substantial differences in the electronic structure, including a metal-insulator transition, which originates from the modification in the Co valence states and crystallographic structures. More interestingly, the two phases can be reversibly controlled by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides.
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Submitted 10 August, 2013;
originally announced August 2013.
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Topotactic phase transformation of the brownmillerite SrCoO2.5 to the perovskite SrCoO3-δ
Authors:
Hyoungjeen Jeen,
Woo Seok Choi,
John W. Freeland,
Hiromichi Ohta,
Chang Uk Jung,
Ho Nyung Lee
Abstract:
Oxygen stoichiometry is one of the most important elements in determining the physical properties of transition metal oxides (TMOs). A small fractional change in the oxygen content, resulting in the variation of valence state of the transition metal, can drastically modify the materials functionalities. In particular, TMOs with mixed valences have attracted attention for many energy applications.…
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Oxygen stoichiometry is one of the most important elements in determining the physical properties of transition metal oxides (TMOs). A small fractional change in the oxygen content, resulting in the variation of valence state of the transition metal, can drastically modify the materials functionalities. In particular, TMOs with mixed valences have attracted attention for many energy applications. Previous studies also showed that the ability to control the number of d-band electron populations and detailed spin configurations is critical for improved catalytic performance of TMOs. In this context, SrCoO$_{x}$ (2.5 < x < 3.0) is an ideal class of materials due to the existence of two structurally distinct topotatic phases, i.e. the brownmillerite SrCoO$_{2.5}$(BM-SCO) and the perovskite SrCoO$_{3}$. Especially, BM-SCO has atomically-ordered one-dimensional vacancy channels, which can accommodate additional oxygen. Moreover, SrCoO$_{x}$ exhibits a wide spectrum of physical properties depending on the oxygen stoichiometry. Since SrCoOx has only a single knob to control the Co valence state without cation do**, it is an attractive material for studying the valence state dependent physical properties. However, so far, the growth of high quality single crystalline materials has not been much studied due to difficulty in controlling the right oxidation state. In this work, we report on the epitaxial growth of BM-SCO single crystalline films on SrTiO3 by pulsed laser epitaxy. In order to examine the topotactic phase transformation to the perovskite SrCoO$_{3-δ}$, some of samples were subsequently in-situ annealed at various oxygen pressure P(O$_{2}$). We found that post-annealing in high P(O$_{2}$) (> several hundreds of Torr) could fill some of oxygen vacancies accompanying systematic evolution in electronic, magnetic, and thermoelectric properties.
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Submitted 15 July, 2013;
originally announced July 2013.
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Active control of magnetoresistance of organic spin valves using ferroelectricity
Authors:
Dali Sun,
Mei Fang,
Xiaoshan Xu,
Lu Jiang,
Hangwen Guo,
Yanmei Wang,
Wenting Yang,
Lifeng Yin,
Paul C. Snijders,
T. Z. Ward,
Zheng Gai,
X. -G. Zhang,
Ho Nyung Lee,
Jian Shen
Abstract:
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here…
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Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.
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Submitted 10 February, 2014; v1 submitted 8 April, 2013;
originally announced April 2013.
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Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces
Authors:
Woo Seok Choi,
Christopher M. Rouleau,
Sung Seok A. Seo,
Zhenlin Luo,
Hua Zhou,
Timothy T. Fister,
Jeffrey A. Eastman,
Paul H. Fuoss,
Dillon D. Fong,
Jonathan Z. Tischler,
Gyula Eres,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most impo…
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Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in sha** a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces.
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Submitted 6 October, 2012;
originally announced October 2012.
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Room-temperature multiferroic hexagonal LuFeO$_3$ films
Authors:
Wenbin Wang,
Jun Zhao,
Wenbo Wang,
Zheng Gai,
Nina Balke,
Miaofang Chi,
Ho Nyung Lee,
Wei Tian,
Leyi Zhu,
Xuemei Cheng,
David J. Keavney,
Jieyu Yi,
Thomas Z. Ward,
Paul C. Snijders,
Hans M. Christen,
Weida Wu,
Jian Shen,
Xiaoshan Xu
Abstract:
The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed…
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The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO$_3$ films are room-temperature multiferroics.
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Submitted 29 May, 2013; v1 submitted 14 September, 2012;
originally announced September 2012.
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Fractionally delta-doped oxide superlattices for higher carrier mobilities
Authors:
Woo Seok Choi,
Suyoun Lee,
Valentino R. Cooper,
Ho Nyung Lee
Abstract:
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-do** to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contribu…
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A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-do** to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.
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Submitted 4 September, 2012;
originally announced September 2012.
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Strain-Induced Spin States in Atomically Ordered Cobaltites
Authors:
Woo Seok Choi,
Ji-Hwan Kwon,
Hyoungjeen Jeen,
Jorge E. Hamann-Borrero,
Abdullah Radi,
Sebastian Macke,
Ronny Sutarto,
Feizhou He,
George A. Sawatzky,
Vladimir Hinkov,
Miyoung Kim,
Ho Nyung Lee
Abstract:
Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful tool for identifying new properties and exploring the vast potential of materials performance. A particular example is LaCoO3, a zero spin, nonmagnetic material in the bulk, whose strong ferromagnetism in a thin film remains enigmatic despite a decade of intense research. Here, we use scanning transmi…
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Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful tool for identifying new properties and exploring the vast potential of materials performance. A particular example is LaCoO3, a zero spin, nonmagnetic material in the bulk, whose strong ferromagnetism in a thin film remains enigmatic despite a decade of intense research. Here, we use scanning transmission electron microscopy complemented by X-ray and optical spectroscopy to study LaCoO3 epitaxial thin films under different strain states. We observed an unconventional strain relaxation behavior resulting in stripe-like, lattice modulated patterns, which did not involve uncontrolled misfit dislocations or other defects. The modulation entails the formation of ferromagnetically ordered sheets comprising intermediate or high spin Co3+, thus offering an unambiguous description for the exotic magnetism found in epitaxially strained LaCoO3 films. This observation provides a novel route to tailoring the electronic and magnetic properties of functional oxide heterostructures.
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Submitted 16 August, 2012;
originally announced August 2012.
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Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures
Authors:
Lu Jiang,
Woo Seok Choi,
Hyoungjeen Jeen,
Takeshi Egami,
Ho Nyung Lee
Abstract:
We fabricated ultrathin ferroelectric/correlated electron oxide heterostructures composed of the ferroelectric Pb(Zr0.2Ti0.8)O3 and the correlated electron oxide (CEO) La0.8Sr0.2MnO3 on SrTiO3 substrates by pulsed laser epitaxy. The hole accumulation in the ultrathin CEO layer was substantially modified by heterostructuring with the ferroelectric layer, resulting in an insulator-metal transition.…
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We fabricated ultrathin ferroelectric/correlated electron oxide heterostructures composed of the ferroelectric Pb(Zr0.2Ti0.8)O3 and the correlated electron oxide (CEO) La0.8Sr0.2MnO3 on SrTiO3 substrates by pulsed laser epitaxy. The hole accumulation in the ultrathin CEO layer was substantially modified by heterostructuring with the ferroelectric layer, resulting in an insulator-metal transition. In particular, our thickness dependent study showed that drastic changes in transport and magnetic properties were strongly coupled to the modulation of charge carriers by ferroelectric field effect, which was confined to the vicinity of the interface. Thus, our results provide crucial evidence that strong ferroelectric field effect control can be achieved in ultrathin (10 nm) heterostructures, yielding at least a 100,000-fold change in resistivity.
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Submitted 19 July, 2012;
originally announced July 2012.
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Band gap tuning in ferroelectric Bi4Ti3O12 by alloying LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)
Authors:
Woo Seok Choi,
Ho Nyung Lee
Abstract:
We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and…
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We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3 showed the largest band gap reduction by ~1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.
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Submitted 21 February, 2012;
originally announced February 2012.
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Wide band gap tunability in complex transition metal oxides by site-specific substitution
Authors:
Woo Seok Choi,
Matthew F. Chisholm,
David J. Singh,
Taekjib Choi,
Gerald E. Jellison Jr,
Ho Nyung Lee
Abstract:
Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferr…
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Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications.
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Submitted 21 February, 2012;
originally announced February 2012.
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Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices
Authors:
Woo Seok Choi,
D. W. Jeong,
S. S. A. Seo,
Y. S. Lee,
T. H. Kim,
S. Y. Jang,
H. N. Lee,
K. Myung-Whun
Abstract:
We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of do** was almost identical regardless of…
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We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of do** was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect.
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Submitted 2 March, 2011;
originally announced March 2011.
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Atomic-scale compensation phenomena at polar interfaces
Authors:
Matthew F. Chisholm,
Weidong Luo,
Mark P. Oxley,
Sokrates T. Pantelides,
Ho Nyung Lee
Abstract:
The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric po…
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The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.
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Submitted 26 October, 2010;
originally announced October 2010.
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Piezoelectricity in the dielectric component of nanoscale dielectric/ferroelectric superlattices
Authors:
Ji Young Jo,
Rebecca J. Sichel,
Ho Nyung Lee,
Serge M. Nakhmanson,
Eric M. Dufresne,
Paul G. Evans
Abstract:
The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. T…
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The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54 pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.
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Submitted 9 May, 2010;
originally announced May 2010.
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Local Electronic and Magnetic Studies of an Artificial La2FeCrO6 Double Perovskite
Authors:
Benjamin Gray,
Ho Nyung Lee,
Jian Liu,
J. Chakhalian,
J. W. Freeland
Abstract:
Through the utilization of element-resolved polarized x-ray probes, the electronic and magnetic state of an artificial La2FeCrO6 double perovskite were explored. Applying unit-cell level control of thin film growth on SrTiO3 (111), the rock salt double perovskite structure can be created for this system, which does not have an ordered perovskite phase in the bulk. We find that the Fe and Cr are in…
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Through the utilization of element-resolved polarized x-ray probes, the electronic and magnetic state of an artificial La2FeCrO6 double perovskite were explored. Applying unit-cell level control of thin film growth on SrTiO3 (111), the rock salt double perovskite structure can be created for this system, which does not have an ordered perovskite phase in the bulk. We find that the Fe and Cr are in the proper 3+ valence state, but, contrary to previous studies, the element-resolved magnetic studies find the moments in field are small and show no evidence of a sizable magnetic moment in the remanent state.
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Submitted 19 April, 2010;
originally announced April 2010.
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Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices
Authors:
J. S. Kim,
S. S. A. Seo,
M. F. Chisholm,
R. K. Kremer,
H. -U. Habermeier,
B. Keimer,
H. N. Lee
Abstract:
We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-do** geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduc…
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We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-do** geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO3 at low temperatures, and its electric-field dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.
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Submitted 5 April, 2010;
originally announced April 2010.
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Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops
Authors:
S. M. Yang,
J. Y. Jo,
T. H. Kim,
J. -G. Yoon,
T. K. Song,
H. N. Lee,
Z. Marton,
S. Park,
Y. Jo,
T. W. Noh
Abstract:
We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils t…
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We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.
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Submitted 28 January, 2010;
originally announced January 2010.
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Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures
Authors:
S. S. A. Seo,
Z. Marton,
W. S. Choi,
G. W. J. Hassink,
D. H. A. Blank,
H. Y. Hwang,
T. W. Noh,
T. Egami,
H. N. Lee
Abstract:
We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transpo…
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We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.
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Submitted 10 August, 2009;
originally announced August 2009.
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Effects of oxygen-reducing atmosphere annealing on LaMnO$_3$ epitaxial thin films
Authors:
W S Choi,
Z Marton,
S Y Jang,
S J Moon,
B C Jeon,
J H Shin,
S S A Seo,
T W Noh,
K Myung-Whun,
H N Lee,
Y S Lee
Abstract:
We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the a…
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We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the antiferromagnetic and insulating phases of bulk-like stoichiometric LaMnO$_3$. We show that non-destructive optical spectroscopy at room temperature is one of the most convenient tools for identifying the phases of LaMnO$_3$ films. Our results serve as a prerequisite in studying LaMnO$_3$ based heterostructures grown by pulsed laser deposition.
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Submitted 13 July, 2009;
originally announced July 2009.
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Strain-coupled ferroelectric polarization in BaTiO3-CaTiO3 superlattices
Authors:
Sung Seok A. Seo,
Ho Nyung Lee
Abstract:
We report on growth and ferroelectric (FE) properties of superlattices (SLs) composed of the FE BaTiO3 and the paraelectric (PE) CaTiO3. Previous theories have predicted that the polarization in (BaTiO3)n/(CaTiO3)n SLs increases as the sublayer thickness (n) increases when the same strain state is maintained. However, our BaTiO3/CaTiO3 SLs show a varying lattice-strain state and systematic reduc…
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We report on growth and ferroelectric (FE) properties of superlattices (SLs) composed of the FE BaTiO3 and the paraelectric (PE) CaTiO3. Previous theories have predicted that the polarization in (BaTiO3)n/(CaTiO3)n SLs increases as the sublayer thickness (n) increases when the same strain state is maintained. However, our BaTiO3/CaTiO3 SLs show a varying lattice-strain state and systematic reduction in polarization with increasing n while coherently-strained SLs with n=1, 2 show a FE polarization of ca. 8.5 uC/cm^2. We suggest that the strain coupling plays more important role in FE properties than the electrostatic interlayer coupling based on constant dielectric permittivities.
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Submitted 14 May, 2009; v1 submitted 21 April, 2009;
originally announced April 2009.
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Charge transport and magnetization profile at the interface between a correlated metal and an antiferromagnetic insulator
Authors:
J. W. Freeland,
J. Chakhalian,
A. V. Boris,
J. -M. Tonnerre,
J. J. Kavich,
P. Yordanov,
S. Grenier,
P. Popovich,
H. N. Lee,
B. Keimer
Abstract:
A combination of spectroscopic probes was used to develop a detailed experimental description of the transport and magnetic properties of superlattices composed of the paramagnetic metal CaRuO$_3$ and the antiferromagnetic insulator CaMnO$_3$. The charge carrier density and Ru valence state in the superlattices are not significantly different from those of bulk CaRuO$_3$. The small charge transf…
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A combination of spectroscopic probes was used to develop a detailed experimental description of the transport and magnetic properties of superlattices composed of the paramagnetic metal CaRuO$_3$ and the antiferromagnetic insulator CaMnO$_3$. The charge carrier density and Ru valence state in the superlattices are not significantly different from those of bulk CaRuO$_3$. The small charge transfer across the interface implied by these observations confirms predictions derived from density functional calculations. However, a ferromagnetic polarization due to canted Mn spins penetrates 3-4 unit cells into CaMnO$_3$, far exceeding the corresponding predictions. The discrepancy may indicate the formation of magnetic polarons at the interface.
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Submitted 26 March, 2009;
originally announced March 2009.
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Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films
Authors:
J. Y. Jo,
S. M. Yang,
T. H. Kim,
H. N. Lee,
J. -G. Yoon,
S. Park,
Y. Jo,
M. H. Jung,
T. W. Noh
Abstract:
We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from f…
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We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field.
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Submitted 28 January, 2009;
originally announced January 2009.
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Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
Authors:
S. M. Yang,
J. Y. Jo,
D. J. Kim,
H. Sung,
T. W. Noh,
H. N. Lee,
J. -G. Yoon,
T. K. Song
Abstract:
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v,…
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We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp),showed creep behavior: i.e. <v> ~ exp(-E0/Eapp)^$μ$ with an exponent $μ$ of 0.9 $\pm$ 0.1 and an activation field E0 of about 700 kV/cm.
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Submitted 21 May, 2008;
originally announced May 2008.
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Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films
Authors:
Dae Ho Kim,
Ho Nyung Lee,
Michael D. Biegalski,
Hans M. Christen
Abstract:
Multiferroic BiFeO3 epitaxial films with thickness ranging from 40 nm to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from angularly-distorted tetragonal with c/a ~ 1.04 to more bulk-like distorted rhombohedral (c/a ~ 1.01) as the strain relaxes with increasing thickness. Despite thi…
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Multiferroic BiFeO3 epitaxial films with thickness ranging from 40 nm to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from angularly-distorted tetragonal with c/a ~ 1.04 to more bulk-like distorted rhombohedral (c/a ~ 1.01) as the strain relaxes with increasing thickness. Despite this significant structural evolution, the ferroelectric polarization along the body diagonal of the distorted pseudo-cubic unit cells, as calculated from measurements along the normal direction, barely changes.
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Submitted 11 December, 2007; v1 submitted 27 October, 2007;
originally announced October 2007.
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Ferroelectricity in artificial bicolor oxide superlattices
Authors:
Sung Seok A. Seo,
Jun Hee Lee,
Ho Nyung Lee,
Matthew F. Chisholm,
Woo Seok Choi,
Dong Jik Kim,
Ji Young Jo,
Hanchul Kim,
Jaejun Yu,
Tae Won Noh
Abstract:
We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly…
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We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly increased as compared to pseudo-binary ceramics with the same overall composition. Such strong enhancement in superlattice is attributed to newly-developed ionic motions of A-site cations at the hetero-interfaces due to the interfacial coupling of electrostatic and elastic interactions, which cannot be found in single phase materials.
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Submitted 12 September, 2007;
originally announced September 2007.
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Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
Authors:
Ho Nyung Lee,
Serge M. Nakhmanson,
Matthew F. Chisholm,
Hans M. Christen,
Karin M. Rabe,
David Vanderbilt
Abstract:
A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr_0.2Ti_0.8O_3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a = 1.05) and highly-strained (c/a = 1.09) epitaxial films shows that polarization, while being amongst the highest reported for PZT or PbTiO_3 in eith…
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A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr_0.2Ti_0.8O_3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a = 1.05) and highly-strained (c/a = 1.09) epitaxial films shows that polarization, while being amongst the highest reported for PZT or PbTiO_3 in either film or bulk forms (P_r = 82 microC/cm^2), is almost independent of the epitaxial strain. We attribute this behavior to a suppressed sensitivity of the A-site cations to epitaxial strain in these Pb-based perovskites, where the ferroelectric displacements are already large, contrary to the case of less polar perovskites, such as BaTiO_3. In the latter case, the A-site cation (Ba) and equatorial oxygen displacements can lead to substantial polarization increases.
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Submitted 18 April, 2007;
originally announced April 2007.
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Optical Study of the Free Carrier Response of LaTiO3/SrTiO3 Superlattices
Authors:
S. S. A. Seo,
W. S. Choi,
H. N. Lee,
L. Yu,
K. W. Kim,
C. Bernhard,
T. W. Noh
Abstract:
We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO3/SrTiO3 superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer-thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface ~3x10^14 cm^-2. This is probably due to the leakage of d-electrons at interfaces from the Mott i…
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We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO3/SrTiO3 superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer-thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface ~3x10^14 cm^-2. This is probably due to the leakage of d-electrons at interfaces from the Mott insulator LaTiO3 to the band insulator SrTiO3. We observed a carrier relaxation time ~ 35 fs and mobility ~ 35 cm^2V^-1s^-1 at 10 K, and an unusual temperature dependence of carrier density that was attributed to the dielectric screening of quantum paraelectric SrTiO3.
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Submitted 7 January, 2008; v1 submitted 15 March, 2007;
originally announced March 2007.