Showing 1–50 of 109 results for author: Lee, H N

Spontaneous Chirality Flip** in an Orthogonal Spin-Charge Ordered Topological Magnet

Authors: H. Miao, J. Bouaziz, G. Fabbris, W. R. Meier, F. Z. Yang, H. X. Li, C. Nelson, E. Vescovo, S. Zhang, A. Christianson, H. N. Lee, Y. Zhang, C. D. Batista, S. Blügel

Abstract: The asymmetric distribution of chiral objects with opposite chirality is of great fundamental interests ranging from molecular biology to particle physics. In quantum materials, chiral states can build on inversion-symmetry-breaking lattice structures or emerge from spontaneous magnetic ordering induced by competing interactions. Although the handedness of a chiral state can be changed through ext… ▽ More The asymmetric distribution of chiral objects with opposite chirality is of great fundamental interests ranging from molecular biology to particle physics. In quantum materials, chiral states can build on inversion-symmetry-breaking lattice structures or emerge from spontaneous magnetic ordering induced by competing interactions. Although the handedness of a chiral state can be changed through external fields, a spontaneous chirality flip** has yet to be discovered. In this letter, we present experimental evidence of chirality flip** via changing temperature in a topological magnet EuAl$_4$, which features orthogonal spin and charge density waves (SDW/CDW). Using circular dichroism of Bragg peaks in the resonant magnetic x-ray scattering, we find that the chirality of the helical SDW flips through a first order phase transition with modified SDW wavelength. Intriguingly, we observe that the CDW couples strongly with the SDW and displays a rare commensurate-to-incommensurate transition at the chirality flip** temperature. Combining with first principles calculations and angle resolved photoemission spectroscopy, we establish the Fermi surface origin of the helical SDW with intertwined spin, charge, and lattice degrees of freedom in EuAl$_4$. Our results reveal an unprecedented spontaneous chirality flip** and lays the groundwork for a new functional manipulation of chirality through momentum dependent spin-charge-lattice interactions. △ Less

Submitted 19 February, 2024; v1 submitted 6 December, 2023; originally announced December 2023.

Comments: Supplementary materials are available from the corresponding author upon request

Control of Impurity Phase Segregation in a PdCrO$_2$/CuCrO$_2$ Heterostructure

Authors: Tom Ichibha, Sangmoon Yoon, Jong Mok Ok, Mina Yoon, Ho Nyung Lee, Fernando A. Reboredo

Abstract: PdCrO$_2$ films are synthesized on CuCrO$_2$ buffer layers on Al$_2$O$_3$ substrates. This synthesis is accompanied by impurity phase segregation, which hampers the synthesis of high quality PdCrO$_2$ films. The potential causes of impurity phase segregation were studied by using a combination of experiments and ab initio calculations. X-ray diffraction and scanning transmission electron microscop… ▽ More PdCrO$_2$ films are synthesized on CuCrO$_2$ buffer layers on Al$_2$O$_3$ substrates. This synthesis is accompanied by impurity phase segregation, which hampers the synthesis of high quality PdCrO$_2$ films. The potential causes of impurity phase segregation were studied by using a combination of experiments and ab initio calculations. X-ray diffraction and scanning transmission electron microscopy experiments revealed impurity phases of Cu$_x$Pd$_{1-x}$ alloy and chromium oxides, Cr$_2$O$_3$ and Cr$_3$O$_4$, in PdCrO$_2$. Calculations determined that oxygen deficiency can cause the impurity phase segregation. Therefore, preventing oxygen release from delafossites could suppress the impurity phase segregation. The amounts of Cr$_2$O$_3$ and Cr$_3$O$_4$ depend differently on temperature and oxygen partial pressure. A reasonable theory-based explanation for this experimental observation is provided. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Optically Induced Picosecond Lattice Compression in the Dielectric Component of a Strongly Coupled Ferroelectric/Dielectric Superlattice

Authors: Deepankar Sri Gyan, Hyeon Jun Lee, Youngjun Ahn, Jerome Carnis, Tae Yeon Kim, Sanjith Unithrattil, Jun Young Lee, Sae Hwan Chun, Sunam Kim, Intae Eom, Minseok Kim, Sang-Youn Park, Kyung Sook Kim, Ho Nyung Lee, Ji Young Jo, Paul G. Evans

Abstract: Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice… ▽ More Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice consistent with depolarization-field screening driven by the photoexcited charge carriers. The depolarization-field-screening-driven expansion is separate from a photoacoustic pulse launched from the bottom electrode on which the superlattice was epitaxially grown. The distribution of diffracted intensity of superlattice x-ray reflections indicates that the depolarization-field-screening-induced strain includes a photoinduced expansion in the ferroelectric BaTiO3 and a contraction in CaTiO3. The magnitude of expansion in BaTiO3 layers is larger than the contraction in CaTiO3. The difference in the magnitude of depolarization-field-screening-driven strain in the BaTiO3 and CaTiO3 components can arise from the contribution of the oxygen octahedral rotation patterns at the BaTiO3/CaTiO3 interfaces to the polarization of CaTiO3. The depolarization-field-screening-driven polarization reduction in the CaTiO3 layers points to a new direction for the manipulation of polarization in the component layers of a strongly coupled ferroelectric/dielectric superlattice. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Journal ref: Adv. Electron. Mater. 8, 2101051 (2022)

Spin-phonon coupling driven Charge density wave in a Kagome Magnet

Authors: H. Miao, T. T. Zhang, H. X. Li, G. Fabbris, A. H. Said, R. Tartaglia, T. Yilmaz, E. Vescovo, J. -X. Yin, S. Murakami, L. X. Feng, K. Jiang, X. L. Wu, A. F. Wang, S. Okamoto, Y. L. Wang, H. N. Lee

Abstract: The intertwining between spin, charge, and lattice degrees of freedom can give rise to unusual macroscopic quantum states, including high-temperature superconductivity and quantum anomalous Hall effects. Recently, a charge density wave (CDW) is observed in the kagome antiferromagnet FeGe, indicative of possible intertwining physics. An outstanding question is that whether magnetic correlation is f… ▽ More The intertwining between spin, charge, and lattice degrees of freedom can give rise to unusual macroscopic quantum states, including high-temperature superconductivity and quantum anomalous Hall effects. Recently, a charge density wave (CDW) is observed in the kagome antiferromagnet FeGe, indicative of possible intertwining physics. An outstanding question is that whether magnetic correlation is fundamental for the spontaneous spatial symmetry breaking orders. Here, utilizing elastic and high-resolution inelastic x-ray scattering, we discover a charge dimerization superlattice that coexists with the 2$\times$2$\times$1 CDW in the kagome sublattice. Most interestingly, between the magnetic and CDW transition temperature, the phonon dynamical structure factor shows a giant phonon-energy hardening and a substantial phonon linewidth broadening near the charge-dimerization wavevectors, both signaling the spin-phonon coupling. By first principles calculations, we show that both the static and dynamic spin excitations intertwine with the phonon to drive the spatial symmetry breaking. △ Less

Submitted 22 December, 2022; v1 submitted 12 October, 2022; originally announced October 2022.

Comments: The data that support the findings of this study are available from the corresponding author on reasonable request

Journal ref: Nature Communications 14: 6183 (2023)

Testing Electron-phonon Coupling for the Superconductivity in Kagome Metal $\rm{CsV_3Sb_5}$

Authors: Yigui Zhong, Shaozhi Li, Hongxiong Liu, Yuyang Dong, Kohei Aido, Yosuke Arai, Haoxiang Li, Weilu Zhang, Youguo Shi, Ziqiang Wang, Shik Shin, H. N. Lee, H. Miao, Takeshi Kondo, Kozo Okazaki

Abstract: In crystalline materials, electron-phonon coupling (EPC) is a ubiquitous many-body interaction that drives conventional Bardeen-Cooper-Schrieffer superconductivity. Recently, in a new kagome metal $\rm{CsV_3Sb_5}$, superconductivity that possibly intertwines with time-reversal and spatial symmetry-breaking orders is observed. Density functional theory calculations predicted weak EPC strength,$λ$,… ▽ More In crystalline materials, electron-phonon coupling (EPC) is a ubiquitous many-body interaction that drives conventional Bardeen-Cooper-Schrieffer superconductivity. Recently, in a new kagome metal $\rm{CsV_3Sb_5}$, superconductivity that possibly intertwines with time-reversal and spatial symmetry-breaking orders is observed. Density functional theory calculations predicted weak EPC strength,$λ$, supporting an unconventional pairing mechanism in $\rm{CsV_3Sb_5}$. However, experimental determination of $λ$ is still missing, hindering a microscopic understanding of the intertwined ground state of $\rm{CsV_3Sb_5}$. Here, using 7-eV laser-based angle-resolved photoemission spectroscopy and Eliashberg function analysis, we determine an intermediate $λ$=0.45~0.6 at T=6 K for both Sb 5p and V 3d electronic bands, which can support a conventional superconducting transition temperature on the same magnitude of experimental value in $\rm{CsV_3Sb_5}$. Remarkably, the EPC on the V 3d-band enhances to $λ$~0.75 as the superconducting transition temperature elevated to 4.4 K in $\rm{Cs(V_{0.93}Nb_{0.07})_3Sb_5}$. Our results provide an important clue to understand the pairing mechanism in the Kagome superconductor $\rm{CsV_3Sb_5}$. △ Less

Submitted 25 March, 2023; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: To appear in Nature Communications

Journal ref: Nature Communications 14, 1945 (2023)

Tunable Ferromagnetism in LaCoO3 Epitaxial Thin Films

Authors: Dongwon Shin, Sangmoon Yoon, Sehwan Song, Sungkyun Park, Ho Nyung Lee, Woo Seok Choi

Abstract: Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxial… ▽ More Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxially strained LaCoO3 thin films were highly consistent. For example, even under largely modulated degree of strain, the reported Curie temperatures of epitaxially strained LaCoO3 thin films lie within 80-85 K, without much deviation. In this study, substantial enhancement (~18%) in the Curie temperature of epitaxial LaCoO3 thin films is demonstrated via crystallographic orientation dependence. By changing the crystallographic orientation of the films from (111) to (110), the crystal-field energy was reduced and the charge transfer between the Co and O orbitals was enhanced. These modifications led to a considerable enhancement of the ferromagnetic properties (including the Curie temperature and magnetization), despite the identical nominal degree of epitaxial strain. The findings of this study provide insights into facile tunability of ferromagnetic properties via structural symmetry control in LaCoO3. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Comments: 17 pages, 4 Figures, 2 Tables

Journal ref: Adv. Mater. Interfaces Early View (2022) 2200433

Topological Electronic Structure Evolution with Symmetry Breaking Spin Reorientation in (Fe$_{1-x}$Co$_{x}$)Sn

Authors: Robert G. Moore, Satoshi Okamoto, Haoxiang Li, William R. Meier, Hu Miao, Ho Nyung Lee, Makoto Hashimoto, Donghui Lu, Elbio Dagotto, Michael A. McGuire, Brian C. Sales

Abstract: Topological materials hosting kagome lattices have drawn considerable attention due to the interplay between topology, magnetism, and electronic correlations. The (Fe$_{1-x}$Co$_x$)Sn system not only hosts a kagome lattice but has a tunable symmetry breaking magnetic moment with temperature and do**. In this study, angle resolved photoemission spectroscopy and first principles calculations are u… ▽ More Topological materials hosting kagome lattices have drawn considerable attention due to the interplay between topology, magnetism, and electronic correlations. The (Fe$_{1-x}$Co$_x$)Sn system not only hosts a kagome lattice but has a tunable symmetry breaking magnetic moment with temperature and do**. In this study, angle resolved photoemission spectroscopy and first principles calculations are used to investigate the interplay between the topological electronic structure and varying magnetic moment from the planar to axial antiferromagnetic phases. A theoretically predicted gap at the Dirac point is revealed in the low temperature axial phase but no gap opening is observed across a temperature dependent magnetic phase transition. However, topological surface bands are observed to shift in energy as the surface magnetic moment is reduced or becomes disordered over time during experimental measurements. The shifting surface bands may preclude the determination of a temperature dependent bulk gap but highlights the intricate connections between magnetism and topology with a surface/bulk dichotomy that can affect material properties and their interrogation. △ Less

Submitted 17 April, 2022; originally announced April 2022.

Comments: 11 pages, 4 figures

DFT+U and Quantum Monte Carlo study of electronic and optical properties of AgNiO$_2$ and AgNi$_{1-x}$Co$_{x}$O$_2$ delafossite

Authors: Hyeondeok Shin, Panchapakesan Ganesh, Paul R. C. Kent, Anouar Benali, Anand Bhattacharya, Ho Nyung Lee, Olle Heinonen, Jaron T. Krogel

Abstract: As the only semimetallic $d^{10}$-based delafossite, AgNiO$_2$ has received a great deal of attention due to both its unique semimetallicity and its antiferromagnetism in the NiO$_2$ layer that is coupled with a lattice distortion. In contrast, other delafossites such as AgCoO$_2$ are insulating. Here we study how the electronic structure of AgNi$_{1-x}$Co$_{x}$O$_2$ alloys vary with Ni/Co concent… ▽ More As the only semimetallic $d^{10}$-based delafossite, AgNiO$_2$ has received a great deal of attention due to both its unique semimetallicity and its antiferromagnetism in the NiO$_2$ layer that is coupled with a lattice distortion. In contrast, other delafossites such as AgCoO$_2$ are insulating. Here we study how the electronic structure of AgNi$_{1-x}$Co$_{x}$O$_2$ alloys vary with Ni/Co concentration, in order to investigate the electronic properties and phase stability of the intermetallics. While the electronic and magnetic structure of delafossites have been studied using Density Functional Theory (DFT), earlier studies have not included corrections for strong on-site Coulomb interactions. In order to treat these interactions accurately, in this study we use Quantum Monte Carlo (QMC) simulations to obtain accurate estimates for the electronic and magnetic properties of AgNiO$_2$. By comparison to DFT results we show that these electron correlations are critical to account for. We show that Co do** on the magnetic Ni sites results in a metal-insulator transition near $x\sim 0.33$, and reentrant behavior near $x\sim 0.66$ △ Less

Submitted 21 July, 2023; v1 submitted 9 April, 2022; originally announced April 2022.

Comments: 25 Pages, 12 figures

Conjoined Charge Density Waves in the Kagome Superconductor CsV3Sb5

Authors: Haoxiang Li, G. Fabbris, A. H. Said, Y. Y. Pai, Q. W. Yin, C. S. Gong, Z. J. Tu, H. C. Lei, J. P. Sun, J. -G. Cheng, Ziqiang Wang, Binghai Yan, R. Thomale, H. N. Lee, H. Miao

Abstract: The intricate interplay between novel lattice geometry and spontaneous symmetry-breaking states is at the forefront of contemporary research on quantum materials. Recently, the observation of unconventional charge and pairing density waves in a kagome metal CsV3Sb5 brings out a new showcase for intertwined orders. While electronic instabilities in CsV3Sb5 are widely believed to originate from the… ▽ More The intricate interplay between novel lattice geometry and spontaneous symmetry-breaking states is at the forefront of contemporary research on quantum materials. Recently, the observation of unconventional charge and pairing density waves in a kagome metal CsV3Sb5 brings out a new showcase for intertwined orders. While electronic instabilities in CsV3Sb5 are widely believed to originate from the V 3d-electrons residing on the 2-dimensional kagome sublattice, the pivotal role of Sb 5p-electrons for 3-dimensional orders is yet to be understood. Here, using resonant tender x-ray scattering and high-pressure X-ray scattering, we report a rare realization of conjoined charge density waves (CDW) in CsV3Sb5. At ambient pressure, we discover a resonant enhancement at Sb L1-edge (2s-5p) at the 2$\times$2$\times$2 CDW wavevectors. The resonance, however, is absent at the 2$\times$2 CDW wavevectors. Applying hydrostatic pressure, we find the CDW transition temperatures to separate, where the 2$\times$2$\times$2 CDW emerges 4 K above the 2$\times$2 CDW at 1GPa. Our results establish the coexistence of the 2$\times$2 CDW and the 5p-electron assisted 2$\times$2$\times$2 CDW in CsV3Sb5. The evolution of the conjoined CDWs under pressure suggests the joint importance of electronic and phononic fluctuations for the double dome superconductivity. △ Less

Submitted 27 February, 2022; originally announced February 2022.

Journal ref: Nature Communications 13:6348 (2022)

Endless Dirac nodal lines in kagome-metal Ni3In2S2

Authors: Tiantian Zhang, T. Yilmaz, E. Vescovo, H. X. Li, R. G. Moore, H. N. Lee, H. Miao, S. Murakami, M. A. McGuire

Abstract: Topological semimetals are a frontier of quantum materials. In multi-band electronic systems, topological band-crossings can form closed curves, known as nodal lines. In the presence of spin-orbit coupling and/or symmetry-breaking operations, topological nodal lines can break into Dirac/Weyl nodes and give rise to novel transport properties, such as the chiral anomaly and giant anomalous Hall effe… ▽ More Topological semimetals are a frontier of quantum materials. In multi-band electronic systems, topological band-crossings can form closed curves, known as nodal lines. In the presence of spin-orbit coupling and/or symmetry-breaking operations, topological nodal lines can break into Dirac/Weyl nodes and give rise to novel transport properties, such as the chiral anomaly and giant anomalous Hall effect. Recently the time-reversal symmetry-breaking induced Weyl fermions are observed in a kagome-metal Co3Sn2S2, triggering interests in nodal-line excitations in multiband kagome systems. Here, using first-principles calculations and symmetry based indicator theories, we find six endless nodal lines along the stacking direction of kagome layers and two nodal rings in the kagome plane in nonmagnetic Ni3 In2 S2 . The linear dipsersive electronic structure, confirmed by angle-resolved photoemission spectroscopy, induces large magnetoresistance up to 2000% at 9 T. Our results establish a diverse topological landscape of multi-band kagome metals. △ Less

Submitted 20 July, 2022; v1 submitted 10 January, 2022; originally announced January 2022.

Comments: 4 figures, 7 pages

Journal ref: npj Comput Mater 8, 155 (2022)

Divergence of Majorana-Phonon Scattering in Kitaev Quantum Spin Liquid

Authors: Haoxiang Li, A. Said, J. Q. Yan, D. M. Mandrus, H. N. Lee, S. Okamoto, Gábor B. Halász, H. Miao

Abstract: Magnetoelastic interaction couples spin and lattice degrees of freedom and plays a key role in thermal transport properties of magnetic insulators. In the Kitaev quantum spin liquid, the low energy excitations are charge neutral Majorana fermions, which transform the magnetoelasctic interaction into Majorana-phonon scattering. Motivated by anomalous thermal properties of the Kitaev quantum spin li… ▽ More Magnetoelastic interaction couples spin and lattice degrees of freedom and plays a key role in thermal transport properties of magnetic insulators. In the Kitaev quantum spin liquid, the low energy excitations are charge neutral Majorana fermions, which transform the magnetoelasctic interaction into Majorana-phonon scattering. Motivated by anomalous thermal properties of the Kitaev quantum spin liquid candidate RuCl$_3$, in this letter, we combine meV resolution inelastic x-ray scattering and theoretical calculation to examine the Majorana-phonon scattering. We analytically derive the velocity-dependent Majorana-phonon scattering and find a divergence when the acoustic phonons and the itinerant Majorana fermions have the same velocity. Based on the experimentally determined acoustic phonon velocity in RuCl$_3$, we estimate the range in the Kitaev interaction for which divergent Majorana-phonon scattering can happen. Our result opens a new avenue to uncover fractionalized quasiparticles in the Kitaev quantum spin liquid and emphasizes the critical role of lattice excitations in RuCl$_3$. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Design and realization of Ohmic and Schottky interfaces for oxide electronics

Authors: Jie Zhang, Yun-Yi Pai, Jason Lapano, Alessandro R. Mazza, Ho Nyung Lee, Rob Moore, Benjamin J. Lawrie, T. Zac Ward, Gyula Eres, Valentino R. Cooper, Matthew Brahlek

Abstract: Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Towards this goal, we design and experimentally validate both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces. We utilize a method for predicting band alignment and charge transfer in ABO3 perovskites, where previou… ▽ More Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Towards this goal, we design and experimentally validate both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces. We utilize a method for predicting band alignment and charge transfer in ABO3 perovskites, where previously established rules for simple semiconductors fail. The prototypical systems chosen are the rare class of oxide metals, SrBO3 with B=V-Ta, when interfaced with the multifaceted semiconducting oxide, SrTiO3. For B=Nb and Ta, we confirm that a large accumulation of charge occurs in SrTiO3 due to higher energy Nb and Ta d-states relative to Ti; this gives rise to a high mobility metallic interface, which is an ideal epitaxial oxide/oxide Ohmic contact. On the other hand, for B=V, there is no charge transfer into the SrTiO3 interface, which serves as a highly conductive epitaxial gate metal. Going beyond these specific cases, this work opens the door to integrating the vast phenomena of ABO3 perovskites into a wide range of practical devices. △ Less

Submitted 22 October, 2021; originally announced October 2021.

Comments: Accepted in Small Science

Spatial symmetry constraint of charge-ordered kagome superconductor CsV$_3$Sb$_5$

Authors: Haoxiang Li, Yu-Xiao Jiang, J. X. Yin, Sangmoon Yoon, Andrew R. Lupini, Y. Pai, C. Nelson, A. Said, Y. M. Yang, Q. W. Yin, C. S. Gong, Z. J. Tu, H. C. Lei, Binghai Yan, Ziqiang Wang, M. Z. Hasan, H. N. Lee, H. Miao

Abstract: Elucidating the symmetry of intertwined orders in exotic superconductors is at the quantum frontier. Recent surface sensitive studies of the topological kagome superconductor CsV$_3$Sb$_5$ discovered a cascade 4a$_0$ superlattice below the charge density wave (CDW) ordering temperature, which can be related to the pair density modulations in the superconducting state. If the 4a$_0$ phase is a bulk… ▽ More Elucidating the symmetry of intertwined orders in exotic superconductors is at the quantum frontier. Recent surface sensitive studies of the topological kagome superconductor CsV$_3$Sb$_5$ discovered a cascade 4a$_0$ superlattice below the charge density wave (CDW) ordering temperature, which can be related to the pair density modulations in the superconducting state. If the 4a$_0$ phase is a bulk and intrinsic property of the kagome lattice, this would form a striking analogy to the stripe order and pair density wave discovered in the cuprate high-temperature superconductors, and the cascade ordering found in twisted bilayer graphene. High-resolution X-ray diffraction has recently been established as an ultra-sensitive probe for bulk translational symmetry-breaking orders, even for short-range orders at the diffusive limit. Here, combining high-resolution X-ray diffraction, scanning tunneling microscopy and scanning transmission electron microscopy, we demonstrate that the 4a$_0$ superstructure emerges uniquely on the surface and hence exclude the 4a$_0$ phase as the origin of any bulk transport or spectroscopic anomaly. Crucially, we show that our detected 2$\times$2$\times$2 CDW order breaks the bulk rotational symmetry to C2, which can be the driver for the bulk nematic orders and nematic surface superlattices including the 4a$_0$ phase. Our high-resolution data impose decisive spatial symmetry constraints on emergent electronic orders in the kagome superconductor CsV$_3$Sb$_5$. △ Less

Submitted 23 September, 2021; v1 submitted 7 September, 2021; originally announced September 2021.

Journal ref: Nature Communications 13:6348 (2022)

Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit

Authors: Jong Mok Ok, Narayan Mohanta, Jie Zhang, Sangmoon Yoon, Satoshi Okamoto, Eun Sang Choi, Hua Zhou, Megan Briggeman, Patrick Irvin, Andrew R. Lupini, Yun-Yi Pai, Elizabeth Skoropata, Changhee Sohn, Haoxiang Li, Hu Miao, Benjamin Lawrie, Woo Seok Choi, Gyula Eres, Jeremy Levy, Ho Nyung Lee

Abstract: Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band struct… ▽ More Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels. △ Less

Submitted 18 August, 2021; originally announced August 2021.

Comments: accepted in Sci. Adv

Epitaxial stabilization of metastable 3C BaRuO3 thin film with ferromagnetic non-Fermi liquid phase

Authors: Sang A Lee, Jong Mok Ok, Jegon Lee, Jae-Yeol Hwang, Sangmon Yoon, Se-Jeong Park, Sehwan Song, Jong-Seong Bae, Sungkyun Park, Ho Nyung Lee, Woo Seok Choi

Abstract: Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase i… ▽ More Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase is metastable with the largest formation energy among the various polymorph phases of BaRuO3. In this study, we successfully prepared 3C BaRuO3 thin films employing epitaxial stabilization. The 3C BaRuO3 thin films show itinerant ferromagnetism with a transition temperature of ~48 K and a non-Fermi liquid phase. The epitaxial stabilization of the 3C BaRuO3 further enabled us to make a standard comparison of perovskite Ruthenates thin films, thereby establishing the importance of the Ru-O orbital hybridization in understanding the itinerant magnetic system. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 24 pages

Journal ref: Advanced Electronic materials 7 (2021) 2001111

Atomic structure of initial nucleation layer in hexagonal perovskite BaRuO$_3$ thin films

Authors: Sangmoon Yoon, Jong Mok Ok, Sang A Lee, Jegon Lee, Andrew R. Lupini, Woo Seok Choi, Ho Nyung Lee

Abstract: Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially sta… ▽ More Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially stabilizing various metastable polymorphs, the atomic structure of epitaxial hexagonal perovskites, especially at the initial growth stage, has rarely been investigated. In this study, we show that an intriguing nucleation behavior takes place during the initial stabilization of a hexagonal perovskite 9R BaRuO3 (BRO) thin film on a (111) SrTiO3 (STO) substrate. We use high-resolution high-angle annular dark field scanning transmission electron microscopy in combination with geometrical phase analysis to understand the local strain relaxation behavior. We find that nano-scale strained layers, composed of different RuO6 octahedral stacking, are initially formed at the interface, followed by a relaxed single crystal9R BRO thin film. Within the interface layer, hexagonal BROs are nucleated on the STO (111) substrate by both corner- and face-sharing. More interestingly, we find that the boundaries between the differently-stacked nucleation layers, i.e. heterostructural boundaries facilitates strain relaxation, in addition to the formation of conventional misfit dislocations evolving from homostructural boundaries. Our observations reveal an important underlying mechanism to understand the thin-film epitaxy and strain accommodation in hexagonal perovskites. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 18 pages, 3 figures

Journal ref: Advanced Materials Interfaces 8 (2021) 2100023

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Authors: Jason Lapano, Yun-Yi Pai, Alessandro Mazza, Jie Zhang, Tamara Isaacs-Smith, Patrick Gemperline, Lizhi Zhang, Haoxiang Li, Ho Nyung Lee, Hu Miao, Gyula Eres, Mina Yoon, Ryan Comes, T. Zac Ward, Benjamin J. Lawrie, Michael McGuire, Robert G. Moore, Christopher T. Nelson, Andrew May, Matthew Brahlek

Abstract: Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled supercon… ▽ More Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications. △ Less

Submitted 25 October, 2021; v1 submitted 14 July, 2021; originally announced July 2021.

Journal ref: APL Materials 9, 101110 (2021)

Geometry of the charge density wave in kagom${é}$ metal AV$_{3}$Sb$_{5}$

Authors: H. Miao, H. X. Li, W. R. Meier, H. N. Lee, A. Said, H. C. Lei, B. R. Ortiz, S. D. Wilson, J. X. Yin, M. Z. Hasan, Ziqiang Wang, Hengxin Tan, Binghai Yan

Abstract: Kagom${é}$ lattice is a fertile platform for topological and intertwined electronic excitations. Recently, experimental evidence of an unconventional charge density wave (CDW) is observed in a Z2 kagom${é}$ metal AV$_{3}$Sb$_{5}$ (A= K, Cs, Rb). This observation triggers wide interests on the interplay between frustrated crystal structure and Fermi surface instabilities. Here we analyze the lattic… ▽ More Kagom${é}$ lattice is a fertile platform for topological and intertwined electronic excitations. Recently, experimental evidence of an unconventional charge density wave (CDW) is observed in a Z2 kagom${é}$ metal AV$_{3}$Sb$_{5}$ (A= K, Cs, Rb). This observation triggers wide interests on the interplay between frustrated crystal structure and Fermi surface instabilities. Here we analyze the lattice effect and its impact on CDW in AV$_{3}$Sb$_{5}$. Based on published experimental data, we show that the CDW induced structural distortions is consistent with the theoretically predicted inverse star-of-David pattern, which preserves the $D_{6h}$ symmetry in the kagom${é}$ plane but breaks the sixfold rotational symmetry of the crystal due to the phase shift between kagom${é}$ layers. The coupling between the lattice and electronic degrees of freedom yields a weak first order structural transition without continuous change of lattice dynamics. Our result emphasizes the fundamental role of lattice geometry in proper understanding of unconventional electronic orders in AV$_{3}$Sb$_{5}$. △ Less

Submitted 7 September, 2021; v1 submitted 18 June, 2021; originally announced June 2021.

Semi-Dirac and Weyl Fermions in Transition Metal Oxides

Authors: Narayan Mohanta, Jong Mok Ok, Jie Zhang, Hu Miao, Elbio Dagotto, Ho Nyung Lee, Satoshi Okamoto

Abstract: We show that a class of compounds with $I$4/$mcm$ crystalline symmetry hosts three-dimensional semi-Dirac fermions. Unlike the known two-dimensional semi-Dirac points, the degeneracy of these three-dimensional semi-Dirac points is not lifted by spin-orbit coupling due to the protection by a nonsymmorphic symmetry -- screw rotation in the $a-b$ plane and a translation along the $c$ axis. This cryst… ▽ More We show that a class of compounds with $I$4/$mcm$ crystalline symmetry hosts three-dimensional semi-Dirac fermions. Unlike the known two-dimensional semi-Dirac points, the degeneracy of these three-dimensional semi-Dirac points is not lifted by spin-orbit coupling due to the protection by a nonsymmorphic symmetry -- screw rotation in the $a-b$ plane and a translation along the $c$ axis. This crystalline symmetry is found in tetragonal perovskite oxides, realizable in thin films by epitaxial strain that results in a$^0$a$^0$c$^-$-type octahedral rotation. Interestingly, with broken time-reversal symmetry, two pairs of Weyl points emerge from the semi-Dirac points within the Brillouin zone, and an additional lattice distortion leads to enhanced intrinsic anomalous Hall effect. The ability to tune the Berry phase by epitaxial strain can be useful in novel oxide-based electronic devices. △ Less

Submitted 5 January, 2022; v1 submitted 14 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 235121 (2021)

Flat Band Induced Negative Magnetoresistance in Multi-Orbital Kagome Metal

Authors: Jie Zhang, T. Yilmaz, J. W. R. Meier, J. Y. Pai, J. Lapano, H. X. Li, K. Kaznatcheev, E. Vescovo, A. Huon, M. Brahlek, T. Z. Ward, B. Lawrie, R. G. Moore, H. N. Lee, Y. L. Wang, H. Miao, B. Sales

Abstract: Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report nega… ▽ More Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report negative magnetoresistance and signature of ferromagnetic fluctuations in a prototypical kagome metal CoSn, which features a flat band in proximity to the Fermi level. We find that the magnetoresistance is dictated by electronic correlations via Fermi level tuning. Combining with first principles and model calculations, we establish flat band-induced correlation effects in a multi-orbital electronic system, which opens new routes to realize unconventional superconducting and topological states in geometrically frustrated metals. △ Less

Submitted 19 May, 2021; v1 submitted 18 May, 2021; originally announced May 2021.

Strain-induced atomic-scale building blocks for ferromagnetism in epitaxial LaCoO3

Authors: Sangmoon Yoon, Xiang Gao, Jong Mok Ok, Zhaoliang Liao, Myung-Geun Han, Yimei Zhu, Panchapakesan Ganesh, Matthew F. Chisholm, Woo Seok Choi, Ho Nyung Lee

Abstract: The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain… ▽ More The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain itself, but rather from the creation of compressed structural units within ferroelastically formed twin-wall domains. The compressed structural units are magnetically active with the rocksalt-type high-spin/low-spin order. Our study highlights that the ferroelastic nature of ferromagnetic structural units is important for understanding the intriguing ferromagnetic properties in LCO thin films. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Twin-domain formation in epitaxial triangular lattice delafossites

Authors: Jong Mok Ok, Sangmoon Yoon, Andrew R. Lupini, Panchapakesan Ganesh, Amanda Huon, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly… ▽ More Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly caused by the formation of twin domains, and their boundaries can be a source of scattering centers for charge carriers. To overcome this challenge, the underlying mechanism for their formation must be understood, so that such defects can be controlled and eliminated. Here, we report the origin of structural twins formed in a CuCrO2 delafossite thin film on a substrate with hexagonal or triangular symmetries. A robust heteroepitaxial relationship is found for the delafossite film with the substrate, and the surface termination turns out to be critical to determine and control the domain structure of epitaxial delafossites. Based on such discoveries, we also demonstrate a twin-free epitaxial thin films grown on high-miscut substrates. This finding provides an important synthesis strategy for growing single domain delafossite thin films and can be applied to other delafossites for epitaxial synthesis of high-quality thin films. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Van der Waals Epitaxy on Freestanding Monolayer Graphene Membrane by MBE

Authors: Jason Lapano, Ondrej Dyck, Andrew Lupini, Wonhee Ko, Haoxiang Li, Hu Miao, Ho Nyung Lee, An-** Li, Matthew Brahlek, Stephen Jesse, Robert G. Moore

Abstract: Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this… ▽ More Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Comments: 13 pages, 4 figures

Observation of Unconventional Charge Density Wave without Acoustic Phonon Anomaly in Kagome Superconductors AV3Sb5 (A=Rb,Cs)

Authors: H. X. Li, T. T. Zhang, Y. -Y. Pai, C. Marvinney, A. Said, T. Yilmaz, Q. Yin, C. Gong, Z. Tu, E. Vescovo, R. G. Moore, S. Murakami, H. C. Lei, H. N. Lee, B. Lawrie, H. Miao

Abstract: The combination of non-trivial band topology and symmetry breaking phases gives rise to novel quantum states and phenomena such as topological superconductivity, quantum anomalous Hall effect and axion electrodynamics. Evidence of intertwined charge density wave (CDW) and superconducting order parameters has recently been observed in a novel kagome material AV3Sb5 (A=K,Rb,Cs) that features a Z2 to… ▽ More The combination of non-trivial band topology and symmetry breaking phases gives rise to novel quantum states and phenomena such as topological superconductivity, quantum anomalous Hall effect and axion electrodynamics. Evidence of intertwined charge density wave (CDW) and superconducting order parameters has recently been observed in a novel kagome material AV3Sb5 (A=K,Rb,Cs) that features a Z2 topological invariant in the electronic structure. However, the origin of the CDW and its intricate interplay with topological state has yet to be determined. Here, using hard x-ray scattering, we demonstrate a three-dimensional (3D) CDW with 2*2*2 superstructure in (Rb,Cs)V3Sb5. Unexpectedly, we find that the CDW fails to induce acoustic phonon anomalies at the CDW wavevector but yields a novel Raman mode which quickly damps into a broad continuum below the CDW transition temperature. Our observations exclude strong electron-phonon coupling driven CDW in AV3Sb5 and point to an unconventional and electronic-driven mechanism that couples the CDW and the topological band structure. △ Less

Submitted 24 March, 2021; v1 submitted 17 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. X 11, 031050 (2021)

Giant Phonon Anomalies in the Proximate Kitaev Quantum Spin Liquid $α$-RuCl$_3$

Authors: H. Li, T. T. Zhang, A. Said, G. Fabbris, D. G. Mazzone, J. Q. Yan, D. Mandrus, G. B. Halasz, S. Okamoto, S. Murakami, M. P. M. Dean, H. N. Lee, H. Miao

Abstract: The Kitaev quantum spin liquid epitomizes an entangled topological state, for which two flavors of fractionalized low-energy excitations are predicted: the itinerant Majorana fermion and the Z2 gauge flux. Detection of these excitations remains challenging, because of their fractional quantum numbers and non-locality. It was proposed recently that fingerprints of fractional excitations are encoded… ▽ More The Kitaev quantum spin liquid epitomizes an entangled topological state, for which two flavors of fractionalized low-energy excitations are predicted: the itinerant Majorana fermion and the Z2 gauge flux. Detection of these excitations remains challenging, because of their fractional quantum numbers and non-locality. It was proposed recently that fingerprints of fractional excitations are encoded in the phonon spectra of Kitaev quantum spin liquids through a novel fractional-excitation-phonon coupling. Here, we uncover this effect in $α$-RuCl3 using inelastic X-ray scattering with meV resolution. At high temperature, we discover interlaced optical phonons intercepting a transverse acoustic phonon between 3 and 7 meV. Upon decreasing temperature, the optical phonons display a large intensity enhancement near the Kitaev energy, JK~8 meV, that coincides with a giant acoustic phonon softening near the Z2 gauge flux energy scale. This fractional excitation induced phonon anomalies uncover the key ingredient of the quantum thermal Hall effect in $α$-RuCl3 and demonstrates a proof-of-principle method to detect fractional excitations in topological quantum materials. △ Less

Submitted 15 June, 2021; v1 submitted 13 November, 2020; originally announced November 2020.

Journal ref: Nature Communications, 2021

Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism

Authors: Jason Lapano, Lauren Nuckols, Alessandro R. Mazza, Yun-Yi Pai, Jie Zhang, Ben Lawrie, Rob G. Moore, Gyula Eres, Ho Nyung Lee, Mao-Hua Du, T. Zac Ward, Joon Sue Lee, William J. Weber, Yanwen Zhang, Matthew Brahlek

Abstract: We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By map** the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n =… ▽ More We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By map** the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena. △ Less

Submitted 27 October, 2020; originally announced October 2020.

Comments: Accepted in Physical Review Materials

Journal ref: Phys. Rev. Materials 4, 111201(R) (2020)

Observation of a Chiral Wave Function in Twofold Degenerate Quadruple Weyl System BaPtGe

Authors: Haoxiang Li, Tiantian Zhang, A. Said, Y. Fu, G. Fabbris, D. G. Mazzone, J. Zhang, J. Lapano, H. N. Lee, H. C. Lei, M. P. M. Dean, S. Murakami, H. Miao

Abstract: Topological states in quantum materials are defined by non-trivial topological invariants, such as the Chern number, which are properties of their bulk wave functions. A remarkable consequence of topological wave functions is the emergence of edge modes, a phenomenon known as bulk-edge correspondence, that gives rise to quantized or chiral physical properties. While edge modes are widely presented… ▽ More Topological states in quantum materials are defined by non-trivial topological invariants, such as the Chern number, which are properties of their bulk wave functions. A remarkable consequence of topological wave functions is the emergence of edge modes, a phenomenon known as bulk-edge correspondence, that gives rise to quantized or chiral physical properties. While edge modes are widely presented as signatures of non-trivial topology, how bulk wave functions can manifest explicitly topological properties remains unresolved. Here, using high-resolution inelastic x-ray spectroscopy (IXS) combined with first principles calculations, we report experimental signatures of chiral wave functions in the bulk phonon spectrum of BaPtGe, which we show to host a previously undiscovered twofold degenerate quadruple Weyl node. The chirality of the degenerate phononic wave function yields a non-trivial phonon dynamical structure factor, S(Q,$ω$), along high-symmetry directions, that is in excellent agreement with numerical and model calculations. Our results establish IXS as a powerful tool to uncover topological wave functions, providing a key missing ingredient in the study of topological quantum matter. △ Less

Submitted 1 October, 2020; originally announced October 2020.

Comments: Data and movies that support the findings of this study are available from the corresponding author on reasonable request

Journal ref: Phys. Rev. B 103, 184301 (2021)

Strong spin-dephasing in a topological insulator - paramagnet heterostructure

Authors: Jason Lapano, Alessandro R. Mazza, Haoxiang Li, Debangshu Mukherjee, Elizabeth M. Skoropata, Jong Mok Ok, Hu Miao, Robert G. Moore, Thomas Z. Ward, Gyula Eres, Ho Nyung Lee, Matthew Brahlek

Abstract: The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through manipulation of the strong spin polarized transport. Here, we report that the spin-momentum-locked transport in the topological insulator Bi$_2$Se$_3$ is completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, C… ▽ More The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through manipulation of the strong spin polarized transport. Here, we report that the spin-momentum-locked transport in the topological insulator Bi$_2$Se$_3$ is completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, Co$_7$Se$_8$. Bi$_2$Se$_{3-}$Co$_7$Se$_{8-}$Bi$_2$Se$_3$ trilayer heterostructures were grown using molecular beam epitaxy. Magnetotransport measurements revealed a substantial suppression of the weak antilocalization effect for Co$_7$Se$_8$ at thicknesses as thin as a monolayer, indicating a strong dephasing mechanism. Bi$_{2-x}$Co$_x$Se$_3$ films, where Co is in a non-magnetic $3^+$ state, show weak antilocalization that survives to $x = 0.5$, which, in comparison with the heterostructures, suggests the unordered moments of the Co$^{2+}$ act as a far stronger dephasing element. This work highlights several important points regarding spin-polarized transport in topological insulator interfaces and how magnetic materials can be integrated with topological materials to realize both exotic phases as well as novel device functionality. △ Less

Submitted 14 September, 2020; originally announced September 2020.

Comments: Accepted APL Materials

Journal ref: APL Materials 8, 091113 (2020)

Pulsed-laser epitaxy of metallic delafossite PdCrO$_2$ films

Authors: Jong Mok Ok, Matthew Brahlek, Woo Seok Choi, Kevin M. Roccapriore, Matthew F. Chisholm, Soyeun Kim, Changhee Sohn, Elizabeth Skoropata, Sangmoon Yoon, Jun Sung Kim, Ho Nyung Lee

Abstract: Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also develo** novel hybrid materials by interfacing with d… ▽ More Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also develo** novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinities, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities between the substrates and volatile nature of PdO layer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 were grown. Unlike PdCrO2, CuCrO2 films were rather readily grown with a relatively wide growth window. Only monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness. △ Less

Submitted 20 February, 2020; v1 submitted 19 February, 2020; originally announced February 2020.

Doped NiO: the Mottness of a charge transfer insulator

Authors: Friederike Wrobel, Hyowon Park, Changhee Sohn, Haw-Wen Hsia, Jian-Min Zuo, Hyeondeok Shin, Ho Nyung Lee, P. Ganesh, Anouar Benali, Paul R. C. Kent, Olle Heinonen, Anand Bhattacharya

Abstract: The evolution of the electronic structures of strongly correlated insulators with do** has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron do** using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is i… ▽ More The evolution of the electronic structures of strongly correlated insulators with do** has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron do** using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole do**, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron do**. For both electron and hole do**, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron do** and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap. △ Less

Submitted 11 May, 2020; v1 submitted 30 January, 2020; originally announced January 2020.

Comments: Revised version

Journal ref: Phys. Rev. B 101, 195128 (2020)

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Authors: Mei Fang, Sangjian Zhang, Wenchao Zhang, Lu Jiang, Eric Vetter, Ho Nyung Lee, Xiaoshan Xu, Dali Sun, Jian Shen

Abstract: Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. He… ▽ More Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electro-resistance and tunneling magnetoresistance, respectively. The nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions arising from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of "mixed" ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs, paving the way for multifunctional device applications. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Journal ref: Physical Review APPLIED 12, 044049 (2019)

Self-Assembled Room Temperature Multiferroic BiFeO3-LiFe5O8 Nanocomposites

Authors: Yogesh Sharma, Radhe Agarwal, Liam Collins, Qiang Zheng, Anton V. Ivelev, Raphael P. Hermann, Valentino R. Cooper, Santosh KC, Ilia N. Ivanov, Ram S. Katiyar, Sergei V. Kalinin, Ho Nyung Lee, Seungbum Hong, Thomas Z. Ward

Abstract: Multiferroic materials have driven significant research interest due to their promising technological potential. Develo** new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8… ▽ More Multiferroic materials have driven significant research interest due to their promising technological potential. Develo** new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8 (LFO) and a ferroelectric perovskite BiFeO3 (BFO) is presented. We observed that lithium (Li)-do** in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of LixBi1-xFeO3 nanoceramics. Multimodal functional and chemical imaging methods are used to map the relationship between do**-induced phase separation and local ferroic properties in both the BFO-LFO composite ceramics and self-assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO-LFO composites is supported by first principles calculations. These findings shed light on Li-ion role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Authors: Yogesh Sharma, Martin V. Holt, Nouamane Laanait, Xiang Gao, Ilia Ivanov, Liam Collins, Changhee Sohn, Zhaoliang Liao, Elizabeth Skoropata, Sergei V. Kalinin, Nina Balke, Gyula Eres, Thomas Z. Ward, Ho Nyung Lee

Abstract: Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary underg… ▽ More Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Photoemission and Dynamical Mean Field Theory Study of Electronic Correlation in a $t_{2g}^{5}$ Metal of SrRhO$_{3}$ Thin Film

Authors: Yujun Zhang, Minjae Kim, Jernej Mravlje, Changhee Sohn, Yongseong Choi, Joerg Strempfer, Yasushi Hotta, Akira Yasui, John Nichols, Ho Nyung Lee, Hiroki Wadati

Abstract: Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication (Phys. Rev. B 95, 245121(2017)) on epitaxial SrRhO$_3$ thin films unexpectedly reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We studied this SrR… ▽ More Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication (Phys. Rev. B 95, 245121(2017)) on epitaxial SrRhO$_3$ thin films unexpectedly reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We studied this SrRhO$_3$ thin film by hard x-ray photoemission spectroscopy and found a very small density of states (DOS) at Fermi level, which is consistent with the reported bad-metallic behavior. However, this negligible DOS persists up to room temperature, which contradicts with the explanation of antiferromagnetic transition at around 100 K. We also employed electronic structure calculations within the framework of density functional theory and dynamical mean-field theory. In contrast to the experimental results, our calculations indicate metallic behavior of both bulk SrRhO$_3$ and the SrRhO$_3$ thin film. The thin film exhibits stronger correlation effects than the bulk, but the correlation effects are not sufficient to drive a transition to an insulating state. The calculated uniform magnetic susceptibility is substantially larger in the thin film than that in the bulk. The role of SOC was also investigated and only a moderate modulation of the electronic structure was observed. Hence SOC is not expected to play an important role for electronic correlation in SrRhO$_3$. △ Less

Submitted 22 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 101, 085134 (2020)

Growth of metallic delafossite PdCoO2 by molecular beam epitaxy

Authors: Matthew Brahlek, Gaurab Rimal, Jong Mok Ok, Debangshu Mukherjee, Alessandro R. Mazza, Qiyang Lu, Ho Nyung Lee, T. Zac Ward, Raymond R. Unocic, Gyula Eres, Seongshik Oh

Abstract: The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction… ▽ More The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction of PdCoO2 to cobalt oxide and metallic palladium. This is overcome by combining low temperature (300 °C) atomic layer-by-layer MBE growth in the presence of reactive atomic oxygen with a post-growth high-temperature anneal. Thickness dependence (5-265 nm) reveals that in the thin regime (<75 nm), the resistivity scales inversely with thickness, likely dominated by surface scattering; for thicker films the resistivity approaches the values reported for the best bulk-crystals at room temperature, but the low temperature resistivity is limited by structural twins. This work shows that the combination of MBE growth and a post-growth anneal provides a route to creating high quality films in this interesting family of layered, triangular oxides. △ Less

Submitted 15 July, 2019; v1 submitted 29 May, 2019; originally announced May 2019.

Report number: Phys. Rev. Materials 3, 093401 (2019)

Journal ref: Phys. Rev. Materials 3, 093401 (2019)

Exploiting symmetry-mismatch to control magnetism in a ferroelastic heterostructure

Authors: Er-Jia Guo, Ryan Desautels, Dongkyu Lee, Manuel A. Roldan, Zhaoliang Liao, Timothy Charlton, Haile Ambaye, Jamie Molaison, Reinhard Boehler, David Keavney, Andreas Herklotz, T. Zac Ward, Ho Nyung Lee, Michael R. Fitzsimmons

Abstract: In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we qua… ▽ More In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we quantitatively measured the distribution of atomic density and magnetization in LCO films by PNR and found that the LCO layers near the heterointerfaces exhibit a reduced magnetization but an enhanced atomic density, whereas the interior shows the opposite trend. We attribute the nonuniformity to the symmetry mismatch at the interface, which induces a structural distortion related to the ferroelasticity of LCO. This assertion is tested by systematic application of hydrostatic pressure during the PNR experiments. These results provide unique insights into mechanisms driving FM in strained LCO films while offering a tantalizing observation that tunable deformation of the CoO6 octahedra in combination with the ferroelastic order parameter. △ Less

Submitted 8 March, 2019; originally announced March 2019.

Comments: 17 pages, 4 figures, and one supporting information

Journal ref: Phys. Rev. Lett. 122, 187202 (2019)

Nanoscale ferroelastic twins formed in strained LaCoO3 films

Authors: Er-Jia Guo, Ryan Desautels, David Keavney, Manue A. Roldan, Brian J. Kirby, Dongkyu Lee, Zhaoliang Liao, Timothy Charlton, Andreas Herklotz, T. Zac Ward, Michael R. Fitzsimmons, Ho Nyung Lee

Abstract: The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very f… ▽ More The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very few examples of these systems. Here we report the observation of twinning domains in ferroelastic LaCoO3 epitaxial thin films and their geometric control of structural symmetry that are intimately linked to the material electronic and magnetic states. A unidirectional structural modulation is achieved by selective choice of substrates possessing two-fold rotational symmetry. This modulation perturbs the crystal field splitting energy, leading to unexpected in plane anisotropy of orbital configuration and magnetization. These findings demonstrate the utilization of structural modulation to control multiferroic interactions and may enable a great potential for stimulation of exotic phenomena through artificial domain engineering. △ Less

Submitted 31 January, 2019; originally announced February 2019.

Comments: 24 pages, 4 figures, and one supporting information (10 figures); accepted for publication in Science Advances

Room-temperature ferromagnetic insulating state in highly cation-ordered epitaxial oxide double perovskite

Authors: Changhee Sohn, Elizabeth Skoropata, Yongseong Choi, Xiang Gao, Ankur Rastogi, Amanda Huon, Michael A. McGuire, Lauren Nuckols, Yanwen Zhang, John W. Freeland, Daniel Haskel, Ho Nyung Lee

Abstract: Ferromagnetic insulators (FMIs) are one of the most important components in develo** dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeR… ▽ More Ferromagnetic insulators (FMIs) are one of the most important components in develo** dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 μB/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to develo** novel oxide quantum materials & heterostructures. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Single Crystal High Entropy Perovskite Oxide Epitaxial Films

Authors: Yogesh Sharma, Brianna L. Musico, Xiang Gao, Chengyun Hua, Andrew F. May, Andreas Herklotz, Ankur Rastogi, David Mandrus, Jiaqiang Yan, Ho Nyung Lee, Matthew F. Chisholm, Veerle Keppens, T. Zac Ward

Abstract: The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent cr… ▽ More The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically-resolved electron energy loss spectroscopy map** shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties. △ Less

Submitted 28 June, 2018; originally announced June 2018.

Journal ref: Physical Review Materials 2, 060404(R) (2018)

Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition

Authors: Paul C. Rogge, Ravini U. Chandrasena, Antonio Cammarata, Robert J. Green, Padraic Shafer, Benjamin M. Lefler, Amanda Huon, Arian Arab, Elke Arenholz, Ho Nyung Lee, Tien-Lin Lee, Slavomír Nemšák, James M. Rondinelli, Alexander X. Gray, Steven J. May

Abstract: We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi… ▽ More We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates. △ Less

Submitted 1 February, 2018; v1 submitted 16 January, 2018; originally announced January 2018.

Comments: Minor typographic changes made

Journal ref: Phys. Rev. Mater. 2, 015002 (2018)

Stretching Epitaxial La0.6Sr0.4CoO3-δ for Fast Oxygen Reduction

Authors: Dongkyu Lee, Ryan Jacobs, Youngseok Jee, S. S. Ambrose Seo, Changhee Sohn, Anton V. Ievlev, Olga S. Ovchinnikova, Kevin Huang, Dane Morgan, Ho Nyung Lee

Abstract: The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in develo** high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study… ▽ More The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in develo** high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study in various materials has been a challenge. Here, we explore the strain modulation of the ORR kinetics by growing epitaxial La0.6Sr0.4CoO3-δ (LSCO) films on yttria-stabilized zirconia substrates with the film thickness below and above the critical thickness for strain relaxation. Two orders of magnitude higher ORR kinetics is achieved in an ultra-thin film with ~0.8% tensile strain as compared to unstrained films. Time-of-flight secondary ion mass spectrometry depth profiling confirms that the Sr surface segregation is not responsible for the enhanced ORR in strained films. We attribute this enhancement of ORR kinetics to the increase in oxygen vacancy concentration in the tensile-strained LSCO film owing to the reduced activation barrier for oxygen surface exchange kinetics. Density functional theory calculations reveal an upshift of the oxygen 2p-band center relative to the Fermi level by tensile strain, indicating the origin of the enhanced ORR kinetics. △ Less

Submitted 15 December, 2017; originally announced December 2017.

Direct Probing of Polarization Charges at the Nanoscale

Authors: Owoong Kwon, Daehee Seol, Dongkyu Lee, Hee Han, Ionela Vrejoiu, Woo Lee, Stephen Jesse, Ho Nyung Lee, Sergei V. Kalinin, Marin Alexe, Yunseok Kim

Abstract: Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has… ▽ More Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has been generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip, and in fact, a matter of the switched area. In this work, we demonstrate the direct probing of the polarization charge at the nanoscale using the Positive-Up-Negative-Down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. We successfully probed the polarization charge densities of 73.7 and 119.0 uC/cm2 in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of the polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale. △ Less

Submitted 20 November, 2017; originally announced November 2017.

Comments: 40 pages, 17 figures

Journal ref: Adv. Mater. 30, 1703675 (2018)

Charge transfer in iridate-manganite superlattices

Authors: Satoshi Okamoto, John Nichols, Changhee Sohn, Soy Yeun Kim, Tae Won Noh, Ho Nyung Lee

Abstract: Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, pro… ▽ More Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft x-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures. △ Less

Submitted 21 September, 2017; originally announced September 2017.

Comments: 6 pages, 5 figures

Journal ref: Nano Letters 17, 2126 (2017)

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

Authors: Yeong Jae Shin, Lingfei Wang, Yoonkoo Kim, Ho-Hyun Nahm Daesu Lee, Jeong Rae Kim, Sang Mo Yang, Jong-Gul Yoon, **-Seok Chung, Miyoung Kim, Seo Hyoung Chang, Tae Won Noh

Abstract: With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface at… ▽ More With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures. △ Less

Submitted 10 August, 2017; originally announced August 2017.

Comments: 27 pages, 6 figures, Supporting Information

Electronic and magnetic properties of epitaxial SrRhO3 films

Authors: John Nichols, Simuck F. Yuk, Changhee Sohn, Hyoungjeen Jeen, John W. Freeland, Valentino R. Cooper, Ho Nyung Lee

Abstract: Strong interplay of fundamental order parameters in complex oxides are known to give rise to exotic physical phenomena. The 4d transition metal oxide SrRhO3 has generated much interest, but advances have been hindered by difficulties in preparing single crystalline phases. Here, we have epitaxially stabilized high quality single crystalline SrRhO3 films and investigated their structural, electroni… ▽ More Strong interplay of fundamental order parameters in complex oxides are known to give rise to exotic physical phenomena. The 4d transition metal oxide SrRhO3 has generated much interest, but advances have been hindered by difficulties in preparing single crystalline phases. Here, we have epitaxially stabilized high quality single crystalline SrRhO3 films and investigated their structural, electronic, and magnetic properties. We determine that their properties significantly differ from the paramagnetic metallic ground state that governs bulk samples and are strongly related to rotations of the RhO6 octahedra. △ Less

Submitted 16 June, 2017; originally announced June 2017.

Journal ref: Physical Review B 95, 245121 (2017)

Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures

Authors: Radhe Agarwal, Yogesh Sharma, Siliang Chang, Krishna Pitike, Changhee Sohn, Serge M. Nakhmanson, Christos G. Takoudis, Ho Nyung Lee, James F. Scott, Ram S. Katiyar, Seungbum Hong

Abstract: We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling m… ▽ More We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications. △ Less

Submitted 15 February, 2017; originally announced February 2017.

Comments: 24 pages, 10 figures

Journal ref: Phys. Rev. B 97, 054109 (2018)

Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy

Authors: Z. Q. Liu, L. Li, Z. Gai, J. D. Clarkson, S. L. Hsu, A. T. Wong, L. S. Fan, M. -W. Lin, C. M. Rouleau, T. Z. Ward, H. N. Lee, A. S. Sefat, H. M. Christen, R. Ramesh

Abstract: We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by… ▽ More We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Comments: 6 pages, 3 figures

Journal ref: Physical Review Letters 116, 097203 (2016)

Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy

Authors: J. Thompson, J. Nichols, S. Lee, S. Ryee, J. H. Gruenewald, J. G. Connell, M. Souri, J. M. Johnson, J. Hwang, M. J. Han, H. N. Lee, D. -W. Kim, S. S. A. Seo

Abstract: Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joul… ▽ More Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T_C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way for improved device applications. △ Less

Submitted 20 October, 2016; originally announced October 2016.

Comments: 8 pages, 4 figures, 1 table

Journal ref: Appl. Phys. Lett. 109, 161902 (2016)

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Authors: Xiang Gao, Shinbuhm Lee, John Nichols, Tricia L. Meyer, Thomas Z. Ward, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 termi… ▽ More Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch. △ Less

Submitted 26 September, 2016; originally announced September 2016.

Comments: 16 pages, 4 figures

Enhancing interfacial magnetization with a ferroelectric

Authors: Tricia L. Meyer, 1 Andreas Herklotz, Valeria Lauter, John W. Freeland, John Nichols, Er-Jia Guo, Shinbuhm Lee, T. Zac Ward, Nina Balke, Sergei V. Kalinin, Michael R. Fitzsimmons, Ho Nyung Lee

Abstract: Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry (PNR) to pro… ▽ More Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry (PNR) to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3 (PZT/LSMO)] heterostructures. We find that there is always suppressed magnetization at the surface and interface of LSMO and such magnetic deterioration can be strongly improved by interfacing with a strongly polar PZT film. The magnetoelectric coupling of magnetism and ferroelectric polarization occurs within a couple of nanometers of the interface as demonstrated by the enhanced interfacial magnetization beyond the bulk value by 5% depending on the polarization of PZT. The latter value is 70% higher than the surface magnetization of a LSMO film without interfacing with a ferroelectric layer. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena. △ Less

Submitted 13 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 94, 174432 (2016)