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Low-Crosstalk, Silicon-Fabricated Optical Waveguides for Laser Delivery to Matter Qubits
Authors:
Clayton L. Craft,
Nicholas J. Barton,
Andrew C. Klug,
Kenneth Scalzi,
Ian Wildemann,
Pramod Asagodu,
Joseph D. Broz,
Nikola L. Porto,
Michael Macalik,
Anthony Rizzo,
Garrett Percevault,
Christopher C. Tison,
A. Matthew Smith,
Michael L. Fanto,
James Schneeloch,
Erin Sheridan,
Dylan Heberle,
Andrew Brownell,
Vijay S. S. Sundaram,
Venkatesh Deenadayalan,
Matthew van Niekerk,
Evan Manfreda-Schulz,
Gregory A. Howland,
Stefan F. Preble,
Daniel Coleman
, et al. (8 additional authors not shown)
Abstract:
Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatib…
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Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatible with scalable quantum information processing. The crosstalk mitigation techniques incorporated into the chip design result in a reduction of the measured optical field by at least 50.8(1.3) dB between adjacent waveguide outputs near 650 nm and similar behavior for devices designed for 493 nm and 585 nm. The waveguide outputs near 650 nm, along with a global laser near 493 nm were used to laser-cool a chain of eight barium-138 ions, and a camera imaged the resulting fluorescence at 493 nm.
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Submitted 27 June, 2024; v1 submitted 25 June, 2024;
originally announced June 2024.
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Tunable quantum emitters on large-scale foundry silicon photonics
Authors:
Hugo Larocque,
Mustafa Atabey Buyukkaya,
Carlos Errando-Herranz,
Samuel Harper,
Jacques Carolan,
Chang-Min Lee,
Christopher J. K. Richardson,
Gerald L. Leake,
Daniel J. Coleman,
Michael L. Fanto,
Edo Waks,
Dirk Englund
Abstract:
Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating at…
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Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
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Submitted 29 June, 2023; v1 submitted 10 June, 2023;
originally announced June 2023.
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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Authors:
Chen Shang,
Kaiyin Feng,
Eamonn T. Hughes,
Andrew Clark,
Mukul Debnath,
Rosalyn Koscica,
Gerald Leake,
Joshua Herman,
David Harame,
Peter Ludewig,
Yating Wan,
John E. Bowers
Abstract:
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region…
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Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
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Submitted 2 June, 2022;
originally announced June 2022.
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Massively Scalable Wavelength Diverse Integrated Photonic Linear Neuron
Authors:
Matthew van Niekerk,
Anthony Rizzo,
Hector Rubio Rivera,
Gerald Leake,
Daniel Coleman,
Christopher Tison,
Michael Fanto,
Keren Bergman,
Stefan Preble
Abstract:
As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the li…
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As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the linear nature of light and the scalability of silicon photonics, specifically leveraging the wide-scale complementary metal-oxide-semiconductor (CMOS) manufacturing infrastructure used to fabricate microelectronics chips. Current neuromorphic photonic implementations stem from two paradigms: wavelength coherent and incoherent. Here, we introduce a novel architecture that supports coherent and incoherent operation to increase the capability and capacity of photonic neural networks with a dramatic reduction in footprint compared to previous demonstrations. As a proof-of-principle, we experimentally demonstrate simple addition and subtraction operations on a foundry-fabricated silicon photonic chip. Additionally, we experimentally validate an on-chip network to predict the logical 2-bit gates AND, OR, and XOR to accuracies of $96.8\%, 99\%,$ and $98.5\%$, respectively. This architecture is compatible with highly wavelength parallel sources, enabling massively scalable photonic neural networks.
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Submitted 25 August, 2022; v1 submitted 11 May, 2022;
originally announced May 2022.
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A full degree-of-freedom photonic crystal spatial light modulator
Authors:
Christopher L. Panuski,
Ian R. Christen,
Momchil Minkov,
Cole J. Brabec,
Sivan Trajtenberg-Mills,
Alexander D. Griffiths,
Jonathan J. D. McKendry,
Gerald L. Leake,
Daniel J. Coleman,
Cung Tran,
Jeffrey St Louis,
John Mucci,
Cameron Horvath,
Jocelyn N. Westwood-Bachman,
Stefan F. Preble,
Martin D. Dawson,
Michael J. Strain,
Michael L. Fanto,
Dirk R. Englund
Abstract:
Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time -- an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-f…
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Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time -- an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-finesse microcavities through inverse design, (ii) scalable fabrication by optimized, 300 mm full-wafer processing, (iii) picometer-precision resonance alignment using automated, closed-loop "holographic trimming", and (iv) out-of-plane cavity control via a high-speed micro-LED array. Combining each, we demonstrate near-complete spatiotemporal control of a 64-resonator, two-dimensional SLM with nanosecond- and femtojoule-order switching. Simultaneously operating wavelength-scale modes near the space- and time-bandwidth limits, this work opens a new regime of programmability at the fundamental limits of multimode optical control.
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Submitted 21 April, 2022;
originally announced April 2022.
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Two-dimensional extreme skin depth engineering for CMOS photonics
Authors:
Matthew van Niekerk,
Saman Jahani,
Justin Bickford,
Pak Cho,
Stephen Anderson,
Gerald Leake,
Daniel Coleman,
Michael L. Fanto,
Christopher C. Tison,
Gregory A. Howland,
Zubin Jacob,
Stefan F. Preble
Abstract:
Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap…
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Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap, bendless directional couplers with large operational bandwidth. Here we experimentally validate two-dimensional e-skid for integrated photonics in a CMOS photonics foundry and demonstrate strong coupling with a gap of 1.44 μm.
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Submitted 9 December, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
