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Landau polaritons in highly non-parabolic 2D gases in the ultra-strong coupling regime
Authors:
Janine Keller,
Giacomo Scalari,
Felice Appugliese,
Shima Rajabali,
Mattias Beck,
Johannes Haase,
Christian A. Lehner,
Werner Wegscheider,
Michele Failla,
Maksym Myronov,
David R. Leadley,
James Lloyd-Hughes,
Pierre Nataf,
Jerome Faist
Abstract:
We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly non-parabolic bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well (QW) systems.…
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We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly non-parabolic bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well (QW) systems. Tuning the coupling strength of the system by two methods, lithographically and by optical pum**, we observe a novel behavior clearly deviating from the standard Hopfield model previously verified in cavity quantum electrodynamics: an opening of a lower polaritonic gap.
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Submitted 30 December, 2019; v1 submitted 25 August, 2017;
originally announced August 2017.
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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers
Authors:
T. L. R. Brien,
P. A. R. Ade,
P. S. Barry,
C. J. Dunscombe,
D. R. Leadley,
D. V. Morozov,
M. Myronov,
E. H. C. Parker,
M. J. Prest,
M. Prunnila,
R. V. Sudiwala,
T. E. Whall,
P. D. Mauskopf
Abstract:
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{μm}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has a highly doped silicon absorb…
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We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{μm}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber.Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of $3.0 \times 10^{-16}$ and $6.6 \times 10^{-17}~\mathrm{W\,Hz^{-1/2}}$ for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.
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Submitted 10 March, 2016;
originally announced March 2016.
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Fractional Quantum Hall States in a Ge Quantum Well
Authors:
O. A. Mironov,
N. d'Ambrumenil,
A. Dobbie,
A. V. Suslov,
E. Green,
D. R. Leadley
Abstract:
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across sad…
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Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
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Submitted 20 May, 2016; v1 submitted 22 December, 2015;
originally announced December 2015.
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A Strained Silicon Cold Electron Bolometer using Schottky Contacts
Authors:
T. L. R. Brien,
P. A. R. Ade,
P. S. Barry,
C. Dunscombe,
D. R. Leadley,
D. V. Morozov,
M. Myronov,
E. H. C. Parker,
M. Prunnila,
M. J. Prest,
R. V. Sudiwala,
T. E. Whall,
P. D. Mauskopf
Abstract:
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in…
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We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to $160~\mathrm{GHz}$ and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of $50~\%$ for radiation coupled into the device by the planar antenna and an overall noise equivalent power (NEP), referred to absorbed optical power, of $1.1 \times 10^{-16}~\mathrm{\mbox{W Hz}^{-1/2}}$ when the detector is observing a $300~\mathrm{K}$ source through a $4~\mathrm{K}$ throughput limiting aperture. Even though this optical system is not optimised we measure a system noise equivalent temperature difference (NETD) of $6~\mathrm{\mbox{mK Hz}^{-1/2}}$. We measure the noise of the device using a cross-correlation of time stream data measured simultaneously with two junction field-effect transistor (JFET) amplifiers, with a base correlated noise level of $300~\mathrm{\mbox{pV Hz}^{-1/2}}$ and find that the total noise is consistent with a combination of photon noise, current shot noise and electron-phonon thermal noise.
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Submitted 31 July, 2014; v1 submitted 8 July, 2014;
originally announced July 2014.
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Superconducting platinum silicide for electron cooling in silicon
Authors:
M J Prest,
J S Richardson-Bullock,
Q T Zhao,
J T Muhonen,
D Gunnarsson,
M Prunnila,
V A Shah,
T E Whall,
E H C Parker,
D R Leadley
Abstract:
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
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Submitted 16 May, 2014;
originally announced May 2014.
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Hall field-induced resistance oscillations in Ge/SiGe quantum wells
Authors:
Q. Shi,
M. A. Zudov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hal…
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We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\star \approx 0.09\,m_0$, obtained from microwave photoresistance in the same sample.
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Submitted 5 May, 2014;
originally announced May 2014.
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Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
Authors:
M. A. Zudov,
O. A. Mironov,
Q. A. Ebner,
P. D. Martin,
Q. Shi,
D. R. Leadley
Abstract:
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized t…
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Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.
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Submitted 5 May, 2014;
originally announced May 2014.
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Optical absorption in highly-strained Ge/SiGe quantum wells: the role of Γ-to-Δ scattering
Authors:
L. Lever,
Z. Ikonić,
A. Valavanis,
R. W. Kelsall,
M. Myronov,
D. R. Leadley,
Y. Hu,
N. Owens,
F. Y. Gardes,
G. T. Reed
Abstract:
We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of…
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We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the Γ-valley carrier lifetimes by evaluating the Γ-to-L and Γ-to-Δ scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that Γ-to-Δ scattering is significant in compressively strained Ge quantum wells and that the Γ-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where Γ-to-Δ scattering accounted for approximately half of the total scattering rate.
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Submitted 28 February, 2013;
originally announced February 2013.
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Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This tran…
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The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.
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Submitted 5 April, 2012;
originally announced April 2012.
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Acoustic Studies of AC Conductivity Mechanisms in $n$-GaAs/AlGaAs in the Integer and Fractional Quantum Hall Effect Regime
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
D. R. Leadley
Abstract:
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $μ\approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mecha…
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In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $μ\approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mechanisms of low-temperature conductivity in the minima of oscillations of high frequency conductivity in the IQHE and FQHE regimes. In the magnetic field region where electrons are delocalized, the parameters determined by the acoustic technique do not differ from those determined by a direct current. However, the acoustic measurements do not require Hall bars and electrical contacts to be fabricated. In the minima of IQHE and FQHE oscillations electrons are localized, and ac conductivity turns to be via hop**. An analysis of the high frequency conductivity in the QHE regime has been carried out within a "two site" model. Furthermore, measurements of acoustoelectric effects in a tilted magnetic field provided the dependence of the activation energy on magnetic field in the fractional quantum Hall effect regime at $ν$=2/3.
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Submitted 7 December, 2011; v1 submitted 4 December, 2011;
originally announced December 2011.
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Strain enhanced electron cooling in a degenerately doped semiconductor
Authors:
M. J. Prest,
J. T. Muhonen,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
J. S. Richardson-Bullock,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cool…
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Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
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Submitted 18 November, 2011; v1 submitted 2 November, 2011;
originally announced November 2011.
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Strain control of electron-phonon energy loss rate in many-valley semiconductors
Authors:
J. T. Muhonen,
M. J. Prest,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
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Submitted 31 January, 2011;
originally announced January 2011.
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Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si cha…
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Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$.
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Submitted 24 November, 2010;
originally announced November 2010.
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Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel…
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We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlap** of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined.
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Submitted 15 October, 2009;
originally announced October 2009.
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Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-p…
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We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
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Submitted 27 April, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
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Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hop** insulator to Wigner glass
Authors:
I. L. Drichko,
A. M. Dyakonov,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
V. Vinokur,
M. Myronov,
O. A. Mironov,
D. R. Leadley
Abstract:
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolutio…
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We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hop** between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K).
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Submitted 5 December, 2007;
originally announced December 2007.
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High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
G. O. Andrianov,
O. A. Mironov,
M. Myronov,
D. R. Leadley,
T. E. Whall
Abstract:
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the…
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The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $σ_1$ to $σ_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.
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Submitted 19 November, 2004;
originally announced November 2004.
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Surface Acoustic Waves probe of the p-type Si/SiGe heterostructures
Authors:
G. O. Andrianov,
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
O. A. Mironov,
M. Myronov,
T. E. Whall,
D. R. Leadley
Abstract:
The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real…
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The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real $σ_1$ (H) and imaginary $σ_2$ (H) components of the high-frequency conductivity have been determined. Analysis of the $σ_1$ to $σ_2$ ratio allows the carrier localization to be followed as a function of temperature and magnetic field. At T=0.7 K the variation of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and could be attributed to 2DHG heating by the SAW electric field. The energy relaxation time is found to be dominated by scattering at the deformation potential of the acoustic phonons with weak screening.
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Submitted 30 January, 2004;
originally announced January 2004.
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Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices
Authors:
D. Chrastina,
J. P. Hague,
D. R. Leadley
Abstract:
A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid overfitting of data, resulting in a physically reasonable solution. The algorithm is fast, and allows the analysis of large quantities of data, removing the bias of data selection inherent in all previous techniques. E…
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A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid overfitting of data, resulting in a physically reasonable solution. The algorithm is fast, and allows the analysis of large quantities of data, removing the bias of data selection inherent in all previous techniques. Existing mobility spectrum analysis systems are reviewed, and the performance of the Bryan's Algorithm Mobility Spectrum (BAMS) approach is demonstrated using synthetic data sets. Analysis of experimental data is briefly discussed. We find that BAMS performs well compared to existing mobility spectrum methods.
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Submitted 21 August, 2003;
originally announced August 2003.
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Searches for Skyrmions in the Limit of Zero g-Factor
Authors:
D. R. Leadley,
R. J. Nicholas,
D. K. Maude,
A. N. Utjuzh,
J. C. Portal,
J. J. Harris,
C. T. Foxon
Abstract:
Energy gaps have been measured for the ferromagnetic quantum Hall effect states at v=1 and 3 in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is reduced to zero by applying hydrostatic pressures of up to 20kbar. At large Zeeman energy the gaps are consistent with spin wave excitations. For a low density sample the gap at v=1 decreases with increasing pressure and reaches a mi…
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Energy gaps have been measured for the ferromagnetic quantum Hall effect states at v=1 and 3 in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is reduced to zero by applying hydrostatic pressures of up to 20kbar. At large Zeeman energy the gaps are consistent with spin wave excitations. For a low density sample the gap at v=1 decreases with increasing pressure and reaches a minimum when the g-factor vanishes. At small Zeeman energy the excitation appears to consist of a large number of reversed spins and may be interpreted as a Skyrmion. The data also suggest Skyrmionic excitations take place at v=3. The width of the minimum at v=1 is found to decrease as the g-factor is reduced in a similar way for all samples.
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Submitted 27 May, 1998;
originally announced May 1998.
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Critical Collapse of the Exchange Enhanced Spin Splitting in 2-D Systems
Authors:
D. R. Leadley,
R. J. Nicholas,
J. J. Harris,
C. T. Foxon
Abstract:
The critical filling factor v_c where Shubnikov-de Haas oscillations become spin split is investigated for a set of GaAs-GaAlAs heterojunctions. Finite temperature magnetoresistance measurements are used to extract the value of v_c at zero temperature. The critically point is where the disorder potential has the same magnitude as the exchange energy, leading to the empirical relationship v_c = g…
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The critical filling factor v_c where Shubnikov-de Haas oscillations become spin split is investigated for a set of GaAs-GaAlAs heterojunctions. Finite temperature magnetoresistance measurements are used to extract the value of v_c at zero temperature. The critically point is where the disorder potential has the same magnitude as the exchange energy, leading to the empirical relationship v_c = g* n t h / 2 m_0. This is valid for all the samples studied, where the density n and single particle lifetime t both vary by more than an order of magnitude and g* the exchange enhanced g-factor has a weak dependence on density. For each sample the spin gap energy shows a linear increase with magnetic field. Experiments in tilted magnetic field show the spin gap is the sum of the bare Zeeman energy and an exchange term. This explains why measurements of the enhanced g-factor from activation energy studies in perpendicular field and the coincidence method in tilted fields have previously disagreed.
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Submitted 26 May, 1998;
originally announced May 1998.
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Fractional Quantum Hall Effect Measurements at Zero g-Factor
Authors:
D. R. Leadley,
R. J. Nicholas,
D. K. Maude,
A. N. Utjuzh,
J. C. Portal,
J. J. Harris,
C. T. Foxon
Abstract:
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the g-factor changes sign when it again increases. The behavior is similar to that seen at v=1 and shows that excitations from the 1/3 ground state can be spin-li…
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Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the g-factor changes sign when it again increases. The behavior is similar to that seen at v=1 and shows that excitations from the 1/3 ground state can be spin-like in character. At small Zeeman energy, the excitation appears to consist of 3 spins and may be interpreted as a small composite skyrmion.
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Submitted 16 June, 1997;
originally announced June 1997.
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Pulsed Magnetic Field Measurements of the Composite Fermion Effective Mass
Authors:
D. R. Leadley,
M. van der Burgt,
R. J. Nicholas,
C. T. Foxon,
J. J. Harris
Abstract:
Magnetotransport measurements of Composite Fermions (CF) are reported in 50 T pulsed magnetic fields. The CF effective mass is found to increase approximately linearly with the effective field $B^*$, in agreement with our earlier work at lower fields. For a $B^*$ of 14 T it reaches $1.6m_e$, over 20 times the band edge electron mass. Data from all fractions are unified by the single parameter…
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Magnetotransport measurements of Composite Fermions (CF) are reported in 50 T pulsed magnetic fields. The CF effective mass is found to increase approximately linearly with the effective field $B^*$, in agreement with our earlier work at lower fields. For a $B^*$ of 14 T it reaches $1.6m_e$, over 20 times the band edge electron mass. Data from all fractions are unified by the single parameter $B^*$ for all the samples studied over a wide range of electron densities. The energy gap is found to increase like $\sqrt{B^*}$ at high fields.
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Submitted 17 August, 1995; v1 submitted 16 August, 1995;
originally announced August 1995.
