Showing 1–46 of 46 results for author: LeRoy, B J

Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material

Authors: Fateme Mahdikhany, Sean Driskill, Jeremy G. Philbrick, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Oliver L. A. Monti, Vasili Perebeinos, Tai Kong, John R. Schaibley

Abstract: One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mix… ▽ More One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (> 10 μm) nanobundles with thicknesses that range from of 1.3 - 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ~1 eV exciton binding energy and a ~200 meV exciton self-trap** energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications including on-chip tunable nanolasers, and applications that require ultra-violet to visible light conversion such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Impact of Boron do** to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Authors: Ali Habiboglu, Yash Chandak, Pravin Khanal, Bowei Zhou, Carter Eckel, Jacob Cutshall Kennedy Warrilow, John O'Brien, John R. Schaibley, Brian J. Leroy, Wei-Gang Wang

Abstract: Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small dam** and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The do** of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, wi… ▽ More Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small dam** and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The do** of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Comments: 9 pages, 4 figures

Journal ref: J. Appl. Phys., 28 December 2023; 134 (24): 243904

Single exciton trap** in an electrostatically defined 2D semiconductor quantum dot

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trap** for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We… ▽ More Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trap** for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination. △ Less

Submitted 3 November, 2022; v1 submitted 27 June, 2022; originally announced June 2022.

Journal ref: Phys. Rev. B 106, L201401 (2022)

Interlayer Exciton Diode and Transistor

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''.… ▽ More Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''. By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high-speed exciton flow with a drift velocity up to 2 * 10$^6$ cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way towards low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures. △ Less

Submitted 19 August, 2022; v1 submitted 17 March, 2022; originally announced March 2022.

Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential

Authors: Fateme Mahdikhanysarvejahany, Daniel N. Shanks, Mathew Klein, Qian Wang, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Oliver L. A. Monti, Brian J. LeRoy, John R. Schaibley

Abstract: Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moiré physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) phot… ▽ More Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moiré physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. Here, we show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We directly compare the do**, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe2-WSe2 region to those in a region separated by bilayer hBN. Our results show that the localization potential resulting in the narrow PL lines is independent of the moiré potential, and instead likely due to extrinsic effects such as nanobubbles or defects. We show that while the do**, electric field, and temperature dependence of the narrow IX lines is similar for both regions, their excitonic g-factors have opposite signs, indicating that the IXs in the directly contacted region are trapped by both moiré and extrinsic localization potentials. △ Less

Submitted 15 March, 2022; originally announced March 2022.

Journal ref: Nature Communications volume 13, Article number: 5354 (2022)

Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures

Authors: Rachel Nieken, Anna Roche, Fateme Mahdikhanysarvejahany, Takashi Taniguchi, Kenji Watanabe, Michael R. Koehler, David G. Mandrus, John Schaibley, Brian J. LeRoy

Abstract: When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to oc… ▽ More When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to occur. Here we report scanning tunneling microscopy and spectroscopy measurements on the band gaps and band modulations in MoSe2/WSe2 heterostructures with near 0 degree rotation (R-type) and near 60 degree rotation (H-type). We find a modulation of the band gap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges. △ Less

Submitted 17 March, 2022; v1 submitted 6 January, 2022; originally announced January 2022.

Comments: Published version

Journal ref: APL Materials 10, 031107 (2022)

Nanoscale trap** of interlayer excitons in a 2D semiconductor heterostructure

Authors: Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley

Abstract: For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trap** approaches invol… ▽ More For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trap** approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an ~20 nm trap. The trapped IXs show the predicted electric field dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step towards deterministic trap** of single IXs, which has broad applications to scalable quantum technologies. △ Less

Submitted 25 June, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Journal ref: Nano Lett. 2021

Temperature dependent moiré trap** of interlayer excitons in MoSe2-WSe2 heterostructures

Authors: Fateme Mahdikhanysarvejahany, Daniel N. Meade, Christine Muccianti, Bekele H. Badada, Ithwun Idi, Adam Alfrey, Sean Raglow, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Oliver L. A. Monti, Hongyi Yu, Brian J. LeRoy, John R. Schaibley

Abstract: MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study o… ▽ More MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study of the temperature, excitation power, and time-dependent PL of IXs. We observe a significant decrease in PL intensity above a transition temperature that we attribute to a transition from localized to delocalized IXs. Astoundingly, we find a simple inverse relationship between the IX PL energy and the transition temperature, which exhibits opposite power dependent behaviors for near 0° and 60° samples. We conclude that this temperature dependence is a result of IX-IX exchange interactions, whose effect is suppressed by the moiré potential trap** IXs at low temperature. △ Less

Submitted 26 May, 2021; v1 submitted 30 December, 2020; originally announced December 2020.

Local characterization and engineering of proximitized correlated states in graphene-NbSe$_2$ vertical heterostructures

Authors: Zhiming Zhang, Kenji Watanabe, Takashi Taniguchi, Brian J. LeRoy

Abstract: Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field,… ▽ More Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field, we imaged the Abrikosov vortex lattice and extracted the coherence length for the proximitized superconducting graphene. We further show that the induced correlated states can be completely blocked by adding a monolayer hBN between the graphene and the NbSe$_2$, which demonstrates the importance of the tunnel barrier and surface conditions between the normal metal and superconductor for the proximity effect. △ Less

Submitted 12 May, 2020; originally announced May 2020.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 102, 085429 (2020)

Probing the wavefunctions of correlated states in magic angle graphene

Authors: Zhiming Zhang, Rachel Myers, Kenji Watanabe, Takashi Taniguchi, Brian J. LeRoy

Abstract: Using scanning probe microscopy and spectroscopy, we explore the spatial symmetry of the electronic wavefunctions of twisted bilayer graphene at the "magic angle" of 1.1 degrees. This small twist angle leads to a long wavelength moiré unit cell on the order of 13 nm and the appearance of two flat bands. As the twist angle is decreased, correlation effects increase until they are maximized at the m… ▽ More Using scanning probe microscopy and spectroscopy, we explore the spatial symmetry of the electronic wavefunctions of twisted bilayer graphene at the "magic angle" of 1.1 degrees. This small twist angle leads to a long wavelength moiré unit cell on the order of 13 nm and the appearance of two flat bands. As the twist angle is decreased, correlation effects increase until they are maximized at the magic angle. At this angle, the wavefunctions at the charge neutrality point show only C2 symmetry due to the emergence of a charge ordered state. As the system is doped, the symmetry of the wavefunctions change at each commensurate filling of the moiré unit cell pointing to the correlated nature of the spin and valley degeneracy broken states. △ Less

Submitted 3 August, 2020; v1 submitted 20 March, 2020; originally announced March 2020.

Comments: 6 pages, 15 figures

Journal ref: Phys. Rev. Research 2, 033181 (2020)

Flat bands in twisted bilayer transition metal dichalcogenides

Authors: Zhiming Zhang, Yimeng Wang, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Emanuel Tutuc, Brian J. LeRoy

Abstract: The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of… ▽ More The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3° and 57.5° twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial map** of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3° and 57.5°, in excellent agreement with first-principle density functional theory calculations. △ Less

Submitted 6 July, 2020; v1 submitted 28 October, 2019; originally announced October 2019.

Comments: 15 pages, 4 figures. Added data for 57 degree twist angle sample

Journal ref: Nature Physics (2020)

2D Semiconductor Nonlinear Plasmonic Modulators

Authors: Matthew Klein, Bekele H. Badada, Rolf Binder, Adam Alfrey, Max McKie, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley

Abstract: A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this wo… ▽ More A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling between the surface plasmon polaritons, SPPs, and excitons in the WSe2 to give a 73 percent change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing the first demonstration of a 2D semiconductor nonlinear plasmonic modulator, with a modulation depth of 4.1 percent, and an ultralow switching energy estimated to be 40 aJ. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Topologically Protected Helical States in Minimally Twisted Bilayer Graphene

Authors: Shengqiang Huang, Kyounghwan Kim, Dmitry K. Efimkin, Timothy Lovorn, Takashi Taniguchi, Kenji Watanabe, Allan H. MacDonald, Emanuel Tutuc, Brian J. LeRoy

Abstract: In minimally twisted bilayer graphene, a moir{é} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{é} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states… ▽ More In minimally twisted bilayer graphene, a moir{é} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{é} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gapped. Our results demonstrate a practical and flexible method for TPH state network construction. △ Less

Submitted 17 July, 2018; v1 submitted 8 February, 2018; originally announced February 2018.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. Lett. 121, 037702 (2018)

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Authors: T. Newhouse-Illige, Y. H. Xu, Y. H. Liu, S. Huang, H. Kato, C. Bi, M. Xu, B. J. LeRoy, W. G. Wang

Abstract: Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is s… ▽ More Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier. △ Less

Submitted 30 January, 2018; v1 submitted 31 August, 2017; originally announced September 2017.

Comments: 14 pages, 4 figures

Ultrafast relaxation of hot phonons in Graphene-hBN Heterostructures

Authors: Dheeraj Golla, Alexandra Brasington, Brian J. LeRoy, Arvinder Sandhu

Abstract: Fast carrier cooling is important for high power graphene based devices. Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier… ▽ More Fast carrier cooling is important for high power graphene based devices. Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon (HP) bottleneck that plagues cooling in graphene devices. △ Less

Submitted 19 April, 2017; originally announced April 2017.

Comments: Pages 1-12: Main manuscript. Pages 13-18: Supplementary material

Tunable Moiré Bands and Strong Correlations in Small-Twist-Angle Bilayer Graphene

Authors: Kyounghwan Kim, Ashley DaSilva, Shengqiang Huang, Babak Fallahazad, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Allan H. MacDonald, Emanuel Tutuc

Abstract: According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microsco… ▽ More According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microscopy and electron transport. We observe conductivity minima at charge neutrality, satellite gaps that appear at anomalous carrier densities for twist angles smaller than 1 degree, and tunneling densities-of-states that are strongly dependent on carrier density. These features are robust up to large transverse electric fields. In perpendicular magnetic fields, we observe the emergence of a Hofstadter butterfly in the energy spectrum, with four-fold degenerate Landau levels, and broken symmetry quantum Hall states at filling factors 1, 2, 3. These observations demonstrate that at small twist angles, the electronic properties of bilayer graphene moiré crystals are strongly altered by electron-electron interactions. △ Less

Submitted 2 March, 2017; originally announced March 2017.

Comments: 17 pages, 7 main figures; to appear in Proceedings of the National Academy of Sciences

Journal ref: Proc. Natl. Acad. Sci. U.S.A. 114, 3364 (2017)

Pressure-induced commensurate stacking of graphene on boron nitride

Authors: Matthew Yankowitz, K. Watanabe, T. Taniguchi, Pablo San-Jose, Brian J. LeRoy

Abstract: Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over… ▽ More Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunneling microscopy tip. For the special case of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking underneath the tip. Our results motivate future studies tailoring the electronic properties of van der Waals heterostructures by controlling the interlayer separation of the entire device using hydrostatic pressure. △ Less

Submitted 25 January, 2017; v1 submitted 10 March, 2016; originally announced March 2016.

Comments: 17 pages, 4 figures and supplementary information. Updated to published version

Journal ref: Nat. Commun. 7, 13168 (2016)

Scanning gate microscopy of ultra clean carbon nanotube quantum dots

Authors: Jiamin Xue, Rohan Dhall, Stephen B. Cronin, Brian J. LeRoy

Abstract: We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlap** multiple sets of Coulomb rings from a single quantum dot. In… ▽ More We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlap** multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime. △ Less

Submitted 21 August, 2015; originally announced August 2015.

Comments: 5 pages, 4 figures

Local Spectroscopic Characterization of Spin and Layer Polarization in WSe$_2$

Authors: Matthew Yankowitz, Devin McKenzie, Brian J. LeRoy

Abstract: We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier… ▽ More We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS (FT-STS), we map the energy versus momentum dispersion relations for monolayer and bilayer WSe$_2$. Further, by tracking allowed and forbidden scattering channels as a function of energy we infer the spin texture of both the conduction and valence bands. We observe a large spin-splitting of the valence band due to strong spin-orbit coupling, and additionally observe spin-valley-layer coupling in the conduction band of bilayer WSe$_2$. △ Less

Submitted 29 July, 2015; v1 submitted 1 May, 2015; originally announced May 2015.

Comments: 5 pages, 4 figures

Evolution of the electronic band structure of twisted bilayer graphene upon do**

Authors: Shengqiang Huang, Matthew Yankowitz, Kanokporn Chattrakun, Arvinder Sandhu, Brian J. LeRoy

Abstract: The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon do** using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge… ▽ More The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon do** using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge do**, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy of separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with do**. △ Less

Submitted 8 August, 2017; v1 submitted 30 April, 2015; originally announced April 2015.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 7, 7611 (2017)

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Authors: Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim, Jiamin Xue, Devin McKenzie, Shengqiang Huang, Marina Paggen, Mazhar N. Ali, Robert J. Cava, Emanuel Tutuc, Brian J. LeRoy

Abstract: The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insul… ▽ More The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices. △ Less

Submitted 24 November, 2014; originally announced November 2014.

Comments: 18 pages, 7 figures

Journal ref: Nano Lett. 15, 1925-1929 (2015)

Band Structure Map** of Bilayer Graphene via Quasiparticle Scattering

Authors: Matthew Yankowitz, Joel I-Jan Wang, Suchun Li, A. Glen Birdwell, Yu-An Chen, Kenji Watanabe, Takashi Taniguchi, Su Ying Quek, Pablo Jarillo-Herrero, Brian J. LeRoy

Abstract: A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle… ▽ More A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as $γ_0 = 3.1$ eV, $γ_1 = 0.39$ eV, and $γ_4 = 0.22$ eV. △ Less

Submitted 3 June, 2014; originally announced June 2014.

Comments: 12 pages, 4 figures

Journal ref: APL Materials 2, 092503 (2014)

Electric Field Control of Soliton Motion and Stacking in Trilayer Graphene

Authors: Matthew Yankowitz, Joel I-Jan Wang, A. Glen Birdwell, Yu-An Chen, K. Watanabe, T. Taniguchi, Philippe Jacquod, Pablo San-Jose, Pablo Jarillo-Herrero, Brian J. LeRoy

Abstract: The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electron… ▽ More The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favored as the electric field increases. This ability to control the stacking order in graphene opens the way to novel devices which combine structural and electrical properties. △ Less

Submitted 29 January, 2014; originally announced January 2014.

Journal ref: Nature Materials 13, 786-789 (2014)

Graphene on Hexagonal Boron Nitride

Authors: Matthew Yankowitz, Jiamin Xue, Brian J. LeRoy

Abstract: The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication… ▽ More The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements. △ Less

Submitted 6 May, 2014; v1 submitted 20 January, 2014; originally announced January 2014.

Comments: Review article, 39 pages, 22 figures

Journal ref: J. Phys.: Condens. Matter 26 303201 (2014)

Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride

Authors: Kanokporn Chattrakun, Shengqiang Huang, K. Watanabe, T. Taniguchi, A. Sandhu, B. J. LeRoy

Abstract: Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the do** level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO$_2$ substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, 2D peak po… ▽ More Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the do** level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO$_2$ substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, 2D peak position, 2D peak width and the ratio of the 2D peak area to the G peak area show a dependence on carrier density that differs for hBN compared to SiO$_2$. Histograms of two-dimensional map** are used to compare the fluctuations in the Raman peak properties between the two substrates. The hBN substrate has been found to produce fewer fluctuations at the same charge density owing to its atomically flat surface and reduced charged impurities. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Journal ref: J. Phys.: Condens. Matter 25 (2013) 505304

Optical characterization of electron-phonon interactions at the saddle point in graphene

Authors: Adam T. Roberts, Rolf Binder, Nai H. Kwong, Dheeraj Golla, Daniel Cormode, Brian J. LeRoy, Henry O. Everitt, Arvinder Sandhu

Abstract: The role of electron-phonon interactions is experimentally and theoretically investigated near the saddle point absorption peak of graphene. The differential optical transmission spectra of multiple, non-interacting layers of graphene reveals the dominant role played by electron-acoustic phonon coupling in bandstructure renormalization. Using a Born approximation for electron-phonon coupling and e… ▽ More The role of electron-phonon interactions is experimentally and theoretically investigated near the saddle point absorption peak of graphene. The differential optical transmission spectra of multiple, non-interacting layers of graphene reveals the dominant role played by electron-acoustic phonon coupling in bandstructure renormalization. Using a Born approximation for electron-phonon coupling and experimental estimates of the dynamic phonon lattice temperature, we deduce the effective acoustic deformation potential to be $D^{\rm ac}_{\rm eff} \simeq 5$eV. This value is in accord with recent theoretical predictions but differs substantially from those obtained using electrical transport measurements. △ Less

Submitted 9 October, 2013; originally announced October 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 112, 187401 (2014)

Optical thickness determination of hexagonal Boron Nitride flakes

Authors: Dheeraj Golla, Kanokporn Chattrakun, Kenji Watanabe, Takashi Taniguchi, Brian J. LeRoy, Arvinder Sandhu

Abstract: Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron Nitride (hBN), which is a material of increasing interest in nanodevice fabrication. The optical contrast shows a strong negative peak at short wavelengths and… ▽ More Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron Nitride (hBN), which is a material of increasing interest in nanodevice fabrication. The optical contrast shows a strong negative peak at short wavelengths and zero contrast at a thickness dependent wavelength. The optical contrast varies linearly for 1-80 layers of hBN, which permits easy calibration of thickness. We demonstrate the applicability of this quick characterization method by comparing atomic force microscopy and optical contrast results. △ Less

Submitted 20 March, 2013; v1 submitted 13 March, 2013; originally announced March 2013.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 161906 (2013)

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

Authors: Matthew Yankowitz, Fenglin Wang, Chun Ning Lau, Brian J. LeRoy

Abstract: The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a wi… ▽ More The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices. △ Less

Submitted 8 April, 2013; v1 submitted 11 January, 2013; originally announced January 2013.

Journal ref: Phys. Rev. B 87, 165102 (2013)

Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride

Authors: Matthew Yankowitz, Jiamin Xue, Daniel Cormode, Javier D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, Philippe Jacquod, Brian J. LeRoy

Abstract: The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points… ▽ More The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points appear in the electronic structure of the material. Graphene on hexagonal boron nitride (hBN) exhibits a rotation dependent Moiré pattern. In this letter, we show experimentally and theoretically that this Moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. The local density of states near these Dirac cones exhibits hexagonal modulations indicating an anisotropic Fermi velocity. △ Less

Submitted 13 February, 2012; originally announced February 2012.

Comments: 16 pages, 6 figures

Journal ref: Nature Physics 8, 382-386 (2012)

Long wavelength local density of states oscillations near graphene step edges

Authors: Jiamin Xue, Javier Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, Brian J. LeRoy

Abstract: Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also obser… ▽ More Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also observe a faster decay of the LDOS oscillations away from the step edge than in conventional metals. This is due to the chiral nature of the Dirac fermions in graphene. △ Less

Submitted 10 November, 2011; originally announced November 2011.

Comments: 5 pages, 4 figures, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 108, 016801 (2012)

Response of graphene to femtosecond high-intensity laser irradiation

Authors: Adam Roberts, Daniel Cormode, Collin Reynolds, Ty Newhouse-Illige, Brian J. LeRoy, Arvinder S. Sandhu

Abstract: We study the response of graphene to high-intensity 10^11-10^12 Wcm^-2, 50-femtosecond laser pulse excitation. We establish that graphene has a fairly high (~3\times10^12Wcm^-2) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation that leads to degrad… ▽ More We study the response of graphene to high-intensity 10^11-10^12 Wcm^-2, 50-femtosecond laser pulse excitation. We establish that graphene has a fairly high (~3\times10^12Wcm^-2) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation that leads to degradation of the lattice over multiple exposures. We identify the lattice modification processes through in-situ Raman microscopy. The effective lifetime of CVD graphene under femtosecond near-IR irradiation and its dependence on laser intensity is determined. These results also define the limits of non-linear applications of graphene in femtosecond high-intensity regime. △ Less

Submitted 5 May, 2011; originally announced May 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 99, 051912 (2011)

STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

Authors: Jiamin Xue, Javier Sanchez-Yamagishi, D. Bulmash, Philippe Jacquod, A. Deshpande, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, B. J. LeRoy

Abstract: Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron an… ▽ More Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles, resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. In this letter, we use scanning tunneling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moire patterns in the topographic images. However, contrary to recent predictions, this conformation does not lead to a sizable band gap due to the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared to those on silicon oxide. This leads to charge fluctuations which are as small as in suspended graphene, opening up Dirac point physics to more diverse experiments than are possible on freestanding devices. △ Less

Submitted 13 February, 2011; originally announced February 2011.

Comments: Nature Materials advance online publication 13/02/2011

Journal ref: Nature Materials 10, 282--285 (2011)

Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy

Authors: A. Deshpande, W. Bao, H. Zhang, Z. Zhao, C. N. Lau, B. J. LeRoy

Abstract: Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the surface and using Coulomb blockade spectroscopy, we map the local charge on the graphene. We observe a series of electron and hole doped puddles with a characteris… ▽ More Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the surface and using Coulomb blockade spectroscopy, we map the local charge on the graphene. We observe a series of electron and hole doped puddles with a characteristic length scale of about 20 nm. Theoretical calculations for the correlation length of the puddles based on the number of impurities are in agreement with our measurements. △ Less

Submitted 2 December, 2010; v1 submitted 1 December, 2010; originally announced December 2010.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 83, 155409 (2011)

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

Authors: W. Bao, G. Liu, Z. Zhao, H. Zhang, D. Yan, A. Deshpande, B. J. LeRoy, C. N. Lau

Abstract: We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-h… ▽ More We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs. △ Less

Submitted 23 March, 2010; originally announced March 2010.

Journal ref: Nano Research, 3, 98 (2010)

Spatial map** of the Dirac point in monolayer and bilayer graphene

Authors: A. Deshpande, W. Bao, Z. Zhao, C. N. Lau, B. J. LeRoy

Abstract: We have mapped the Dirac point in exfoliated monolayer and bilayer graphene using spatially resolved scanning tunneling spectroscopy (STS) measurements at low temperature. The Dirac point shifts in energy at different locations in graphene. However, a cross correlation with the topography shows no correlation indicating that topographic features such as ripples are not the primary source of the… ▽ More We have mapped the Dirac point in exfoliated monolayer and bilayer graphene using spatially resolved scanning tunneling spectroscopy (STS) measurements at low temperature. The Dirac point shifts in energy at different locations in graphene. However, a cross correlation with the topography shows no correlation indicating that topographic features such as ripples are not the primary source of the variation. Rather, we attribute the shift of the Dirac point to random charged impurities located near the graphene. Our findings emphasize the need to advance exfoliated graphene sample preparation to minimize the effect of impurities. △ Less

Submitted 2 December, 2009; originally announced December 2009.

Comments: 4 pages, 3 figures

Journal ref: IEEE Trans. on Nano. 10, 88 (2011)

Map** the Dirac point in gated bilayer graphene

Authors: A. Deshpande, W. Bao, Z. Zhao, C. N. Lau, B. J. LeRoy

Abstract: We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tun… ▽ More We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities. △ Less

Submitted 19 October, 2009; originally announced October 2009.

Comments: 3 pages, 3 figures

Journal ref: Applied Physics Letters 95, 243502 (2009)

Spatially resolved spectroscopy of monolayer graphene on SiO2

Authors: A. Deshpande, W. Bao, F. Miao, C. N. Lau, B. J. LeRoy

Abstract: We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy… ▽ More We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate. △ Less

Submitted 19 March, 2009; v1 submitted 4 December, 2008; originally announced December 2008.

Comments: 6 pages, 7 figures, extended version

Journal ref: Phys. Rev. B 79, 205411 (2009)

Three-terminal scanning tunneling spectroscopy of suspended carbon nanotubes

Authors: B. J. LeRoy, J. Kong, V. K. Pahilwani, C. Dekker, S. G. Lemay

Abstract: We have performed low-temperature scanning tunneling spectroscopy measurements on suspended single-wall carbon nanotubes with a gate electrode allowing three-terminal spectroscopy measurements. These measurements show well-defined Coulomb diamonds as well as side peaks from phonon-assisted tunneling. The side peaks have the same gate voltage dependence as the main Coulomb peaks, directly proving… ▽ More We have performed low-temperature scanning tunneling spectroscopy measurements on suspended single-wall carbon nanotubes with a gate electrode allowing three-terminal spectroscopy measurements. These measurements show well-defined Coulomb diamonds as well as side peaks from phonon-assisted tunneling. The side peaks have the same gate voltage dependence as the main Coulomb peaks, directly proving that they are excitations of these states. △ Less

Submitted 15 April, 2005; originally announced April 2005.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 72, 075413 (2005)

Imaging Electron Interferometer

Authors: B. J. LeRoy, A. C. Bleszynski, K. E. Aidala, R. M. Westervelt, A. Kalben, E. J. Heller, S. E. J. Shaw, K. D. Maranowski, A. C. Gossard

Abstract: An imaging interferometer was created in a two-dimensional electron gas by reflecting electron waves emitted from a quantum point contact (QPC) with a circular mirror. Images of electron flow obtained with a scanning probe microscope at liquid He temperatures show interference fringes when the mirror is energized. A quantum phase shifter was created by moving the mirror via its gate voltage, and… ▽ More An imaging interferometer was created in a two-dimensional electron gas by reflecting electron waves emitted from a quantum point contact (QPC) with a circular mirror. Images of electron flow obtained with a scanning probe microscope at liquid He temperatures show interference fringes when the mirror is energized. A quantum phase shifter was created by moving the mirror via its gate voltage, and an interferometric spectrometer can be formed by swee** the tip over many wavelengths. Experiments and theory demonstrate that the interference signal is robust against thermal averaging. △ Less

Submitted 23 February, 2005; originally announced February 2005.

Comments: 16 pages, 4 figures, to appear in Phys. Rev. Lett. Movies associated with this paper at http://www.mb.tn.tudelft.nl/user/brian/interferometer.html

Journal ref: Phys. Rev. Lett., 94 126801 (2005)

Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

Authors: J. Kong, B. J. LeRoy, S. G. Lemay, C. Dekker

Abstract: We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature ~800 C involved in the growth process poses challenging issues such as surface roughness and integrity of the str… ▽ More We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature ~800 C involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes. △ Less

Submitted 21 February, 2005; originally announced February 2005.

Comments: 4 pages, 3 figures, to appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 86, 112106 (2005)

Electrical generation and absorption of phonons in carbon nanotubes

Authors: B. J. LeRoy, S. G. Lemay, J. Kong, C. Dekker

Abstract: The interplay between discrete vibrational and electronic degrees of freedom directly influences the chemical and physical properties of molecular systems. This coupling is typically studied through optical methods such as fluorescence, absorption, and Raman spectroscopy. Molecular electronic devices provide new opportunities for exploring vibration-electronic interactions at the single molecule… ▽ More The interplay between discrete vibrational and electronic degrees of freedom directly influences the chemical and physical properties of molecular systems. This coupling is typically studied through optical methods such as fluorescence, absorption, and Raman spectroscopy. Molecular electronic devices provide new opportunities for exploring vibration-electronic interactions at the single molecule level. For example, electrons injected from a scanning tunneling microscope tip into a metal can excite vibrational excitations of a molecule in the gap between tip and metal. Here we show how current directly injected into a freely suspended individual single-wall carbon nanotube can be used to excite, detect, and control a specific vibrational mode of the molecule. Electrons inelastically tunneling into the nanotube cause a non-equilibrium occupation of the radial breathing mode, leading to both stimulated emission and absorption of phonons by successive electron tunneling events. We exploit this effect to measure a phonon lifetime on the order of 10 nanoseconds, corresponding to a quality factor well over 10000 for this nanomechanical oscillator. △ Less

Submitted 21 January, 2005; originally announced January 2005.

Comments: 17 pages, 4 figures

Journal ref: Nature 432, 371-374 (2004)

Thermal Electron Wavepacket Interferometry: Derivation and New Results

Authors: E. J. Heller, K. E. Aidala, B. J. LeRoy, A. C. Bleszynski, A. Kalben, R. M. Westervelt, K. D. Maranowski, A. C. Gossard

Abstract: A novel formal equivalence between thermal averages of coherent properties (e.g. conductance), and time averages of a single wavepacket arises for Fermi gasses and certain geometries. In the case of one open channel in a quantum point contact (QPC), only one wavepacket history, with wavepacket width equal to thermal length, completely determines thermally averaged conductance. The formal equival… ▽ More A novel formal equivalence between thermal averages of coherent properties (e.g. conductance), and time averages of a single wavepacket arises for Fermi gasses and certain geometries. In the case of one open channel in a quantum point contact (QPC), only one wavepacket history, with wavepacket width equal to thermal length, completely determines thermally averaged conductance. The formal equivalence moreover allows very simple physical interpretations of interference features surviving under thermal averaging. Simply put, pieces of thermal wavepacket returning to the QPC along independent paths must arrive at the same time in order to interfere. Remarkably, one immediate result of this approach is that higher temperature leads to narrower wavepackets and therefore better resolution of events in the time domain. In effect, experiments at 4.2 K are performing time gated experiments at better than a gigahertz. Experiments involving thermally averaged ballistic conductance in 2DEGS are presented as an application of this picture. △ Less

Submitted 17 September, 2004; originally announced September 2004.

Scanning Tunneling Spectroscopy of Suspended Single-Wall Carbon Nanotubes

Authors: B. J. LeRoy, S. G. Lemay, J. Kong, C. Dekker

Abstract: We have performed low-temperature STM measurements on single-wall carbon nanotubes that are freely suspended over a trench. The nanotubes were grown by CVD on a Pt substrate with predefined trenches etched into it. Atomic resolution was obtained on the freestanding portions of the nanotubes. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes wa… ▽ More We have performed low-temperature STM measurements on single-wall carbon nanotubes that are freely suspended over a trench. The nanotubes were grown by CVD on a Pt substrate with predefined trenches etched into it. Atomic resolution was obtained on the freestanding portions of the nanotubes. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes was also achieved, showing a Coulomb-staircase behavior superimposed on the local density of states. The spacing of the Coulomb blockade peaks changed with tip position reflecting a changing tip-tube capacitance. △ Less

Submitted 12 March, 2004; originally announced March 2004.

Journal ref: Appl. Phys. Lett. 84, 4280 (2004)

Imaging coherent electron wave flow in a two-dimensional electron gas

Authors: B. J. LeRoy, A. C. Bleszynski, M. A. Topinka, R. M. Westervelt, S. E. J. Shaw, E. J. Heller, K. D. Maranowski, A. C. Gossard

Abstract: We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a GaAs/AlGaAs two-dimensional electron gas using a liquid He cooled SPM. A negative voltage is placed on the tip, which creates a small region of depleted electrons… ▽ More We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a GaAs/AlGaAs two-dimensional electron gas using a liquid He cooled SPM. A negative voltage is placed on the tip, which creates a small region of depleted electrons that backscatters electron waves. Oscillating the voltage on the tip and locking into this frequency gives the spatial derivative of electron flow perpendicular to the direction of current flow. We show images of electron flow using this method. By measuring the amount of electrons backscattered as a function of the voltage applied to the tip, the energy distribution of electrons is measured. △ Less

Submitted 12 August, 2002; originally announced August 2002.

Comments: 2 pages, 3 figures; submitted to LT23 proceedings

Journal ref: Physica E, 18 (1-3) 163 (2003)

Imaging Coherent Electron Flow

Authors: B. J. LeRoy, A. C. Bleszynski, M. A. Topinka, R. M. Westervelt, S. E. J. Shaw, E. J. Heller, K. D. Maranowski, A. C. Gossard

Abstract: Images of electron flow through a two-dimensional electron gas from a quantum point contact (QPC) can be obtained at liquid He temperatures using scanning probe microscopy (SPM). A negatively charged SPM tip depletes the electron gas immediately below it and decreases the conductance by backscattering electrons. Images of electron flow are obtained by recording the conductance as the tip is scan… ▽ More Images of electron flow through a two-dimensional electron gas from a quantum point contact (QPC) can be obtained at liquid He temperatures using scanning probe microscopy (SPM). A negatively charged SPM tip depletes the electron gas immediately below it and decreases the conductance by backscattering electrons. Images of electron flow are obtained by recording the conductance as the tip is scanned over the sample. These images show angular patterns that are characteristic of electron flow through individual modes of the QPC, as well as well-defined branches at longer distances. The addition of a prism formed by a triangular gate bends electron paths as the electron density is reduced under the prism by an applied gate voltage. Under the conditions of the experiment, electron-electron scattering is the dominant inelastic process. By observing how the amplitude of backscattered electrons in images of electron flow decreases with added electron energy, we are able to determine the average length and time necessary for inelastic scattering. A dc voltage Vo applied across the QPC accelerates electrons so that their energy is greater than the Fermi energy before inelastic scattering occurs. The signal is observed to decrease in amplitude and eventually disappear at distances from the QPC that decrease progressively as Vo is increased. △ Less

Submitted 9 August, 2002; originally announced August 2002.

Comments: 8 pages, 9 figures; to appear in Proceedings of the International Conference on the Physics of Semiconductors (ICPS 2002)

Coherent Branched Flow in a Two-Dimensional Electron Gas

Authors: M. A. Topinka, B. J. LeRoy, R. M. Westervelt, S. E. J. Shaw, R. Fleischmann, E. J. Heller, K. D. Maranowski, A. C. Gossard

Abstract: Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG nanostructures and many remarkable phenomena have been discovered (e.g. weak localization, quantum chaos, universal conductance fluctuations)1,2 - yet a fundamental asp… ▽ More Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG nanostructures and many remarkable phenomena have been discovered (e.g. weak localization, quantum chaos, universal conductance fluctuations)1,2 - yet a fundamental aspect of these devices, namely how electrons move through them, has never been clarified. Important details about the actual pattern of electron flow are not specified by statistical measures such as the mean free path. Scanned probe microscope (SPM) measurements allow spatial investigations of nanostructures, and it has recently become possible to directly image electron flow through 2DEG devices using newly developed SPM techniques3-13. Here we present SPM images of electron flow from a quantum point contact (QPC) which show unexpected dynamical channeling - the electron flow forms persistent, narrow, branching channels rather than smoothly spreading fans. Theoretical study of this flow, including electron scattering by impurities and donor atoms, shows that the channels are not due to deep valleys in the potential, but rather are caused by the indirect cumulative effect of small angle scattering. Surprisingly, the channels are decorated by interference fringes well beyond where the simplest thermal averaging arguments suggest they should be found. These findings may have important implications for 2DEG physics and for the design of future nanostructure devices. △ Less

Submitted 23 October, 2000; originally announced October 2000.

Comments: 14pages, 4 figures, Submitted to Nature

Journal ref: Nature 410, 183 (2001)