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Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier
Authors:
Matthias Althammer,
Amit Vikam Singh,
Sahar Keshavarz,
Mehmet Kenan Yurtisigi,
Rohan Mishra,
Albina Borisevich,
Patrick LeClair,
Arunava Gupta
Abstract:
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better la…
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We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO$_3$ barrier, reaching values of up to 350% at T=5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T>200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.
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Submitted 28 July, 2016;
originally announced July 2016.
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Cross-spectrum Analyzer for Low Frequency Noise Analysis
Authors:
Xing Zhong,
Sahar Keshavarz,
Josh Jones,
Claudia Mewes,
Patrick R. LeClair
Abstract:
The design and performance of a sensitive and reliable cross-correlation spectrum analyzer for studying low frequency transport noise is described in detail. The design makes use of common PC-based data acquisition hardware and preamplifiers to acquire time-based data, along with software we have developed to compute the cross-correlation and noise spectral density. The impedance of device under t…
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The design and performance of a sensitive and reliable cross-correlation spectrum analyzer for studying low frequency transport noise is described in detail. The design makes use of common PC-based data acquisition hardware and preamplifiers to acquire time-based data, along with software we have developed to compute the cross-correlation and noise spectral density. The impedance of device under test may cover four decades from ${100\,Ω}$ to ${1\,{\mathrm{M}Ω}}$. By utilizing a custom developed signal processing program, this system is tested to be accurate and efficient for measuring voltage noise as low as $\sim\!10^{-19}\,\mathrm{V}^2/\mathrm{Hz}$ from ${0.001\,}$Hz to ${100\,}$kHz within one day's averaging time, comparable with more expensive hardware solutions (bandwidth in real measurements may be limited by the sample impedance and stray capacitance). The time dependence of measurement sensitivity is discussed theoretically and characterized experimentally to optimize between measuring time and accuracy. A routine for noise component analysis is introduced, and is applied for characterizing the noise spectra of metal and carbon film resistors, revealing an almost strict $1/$frequency dependence that may reflect an ensemble of random resistivity fluctuation processes with uniformly distributed activation energies. These results verify the general applicability of this analyzer for low level noise researches.
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Submitted 11 August, 2014;
originally announced August 2014.
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High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films
Authors:
Nikoleta Theodoropoulou,
Vinith Misra,
John Philip,
Patrick LeClair,
Geetha P. Berera,
Jagadeesh S. Moodera,
Biswarup Satpati,
Tapobrata Som
Abstract:
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported fo…
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Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.
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Submitted 12 August, 2004;
originally announced August 2004.
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Large magnetoresistance using hybrid spin filter devices
Authors:
P. LeClair,
J. K. Ha,
H. J. M. Swagten,
C. H. van de Vin,
J. T. Kohlhepp,
W. J. M. de Jonge
Abstract:
A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this…
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A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.
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Submitted 27 July, 2001;
originally announced July 2001.
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Observation of band structure and density of states effects in Co-based magnetic tunnel junctions
Authors:
P. LeClair,
J. T. Kohlhepp,
C. H. van de Vin,
H. Wieldraaijer,
H. J. M. Swagten,
W. J. M. de Jonge,
A. H. Davis,
J. M. MacLaren,
R. Jansen,
J. S. Moodera
Abstract:
Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one fcc(111) textured and one polycrystalline (poly-phase and poly-directional) Co electrode, a strong asymmetry is observed in the magnetotransport properties, while wh…
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Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one fcc(111) textured and one polycrystalline (poly-phase and poly-directional) Co electrode, a strong asymmetry is observed in the magnetotransport properties, while when both electrodes are polycrystalline the magnetotransport is essentially symmetric. These observations are successfully explained within a model based on ballistic tunneling between the calculated band structures (DOS) of fcc-Co and hcp-Co.
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Submitted 27 July, 2001;
originally announced July 2001.
