Showing 1–29 of 29 results for author: LeBeau, J M

Additively manufacturable high-strength aluminum alloys with thermally stable microstructures enabled by hybrid machine learning-based design

Authors: S. Mohadeseh Taheri-Mousavi, Michael Xu, Florian Hengsbach, Clay Houser, Zhaoxuan Ge, Benjamin Glaser, Shaolou Wei, Mikro Schaper, James M. LeBeau, Greg B. Olson, A. John Hart

Abstract: Additively manufactured (AM) structural components with complex geometries and tailored properties at voxel-size resolution will lead to significant leap in performance in various critical engineering applications. However, at each voxel, we first need to be able to design the alloy efficiently and reliably. We demonstrate a hybrid approach combining calculation of phase diagram (CALPHAD)-based in… ▽ More Additively manufactured (AM) structural components with complex geometries and tailored properties at voxel-size resolution will lead to significant leap in performance in various critical engineering applications. However, at each voxel, we first need to be able to design the alloy efficiently and reliably. We demonstrate a hybrid approach combining calculation of phase diagram (CALPHAD)-based integrated computational materials engineering (ICME) with machine learning and inverse design techniques and performed a full alloy design cycle of a novel Al alloy (Al-Er-Zr-Y-Yb-Ni) for AM from virtual predictions to experimental validation. We designed this alloy to exhibit high tensile strength at room temperature through nanoscale L1$_2$-phase precipitation which stabilizes the microstructure to maintain strength after high-temperature aging. We initially exploit a fine distribution of metastable eutectic ternary phases through rapid solidification, which serve as the source for the reactive elements enabling nanoscale precipitation of a high phase fraction of the thermally stable L1$_2$ strengthening phases. The strength of the 3D-printed samples manufactured via laser powder bed fusion (LPBF) from the designed composition is comparable to that of wrought Al 7075, and after high-temperature (400$^\circ$C) aging is 50% stronger than the best benchmark printable Al alloy1. The stable strengthening strategy is applicable to a wide range of alloys and rapid solidification processes, and our hybrid ML/CALPHAD numerical framework can be used for the efficient and robust design of alloy microstructures and properties, expanding the capabilities of additive as well as traditional manufacturing. △ Less

Submitted 25 June, 2024; originally announced June 2024.

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Authors: Kevin Ye, Ida Sadeghi, Michael Xu, Jack Van Sambeek, Tao Cai, Jessica Dong, Rishabh Kothari, James M. LeBeau, R. Jaramillo

Abstract: We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu… ▽ More We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Antiferroelectric Nanodomains Stabilized by Chemical Disorder at Anti-phase Boundaries

Authors: Menglin Zhu, Michael Xu, Yu Yun, Liyan Wu, Or Shafir, Colin Gilgenbach, Lane W. Martin, Ilya Grinberg, Jonathan E. Spanier, James M. LeBeau

Abstract: Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments.… ▽ More Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments. In this study, correlations between chemical order and the stability of the antiferroelectric phase are established at anti-phase boundaries in \ce{Pb2MgWO6}. Using multislice ptychography, we reveal the three-dimensional nature of chemical order at the boundaries and show that they exhibit a finite width of chemical intermixing. Furthermore, regions at and adjacent to the anti-phase boundary exhibit antiferroelectric displacements in contrast to the overall paraelectric film. Combining spatial statistics and density functional theory simulations, local antiferroelectric distortions are shown to be confined to and stabilized by chemical disorder. Enabled by the three-dimensional information of multislice ptychography, these results provide insights into the interplay between chemical order and electronic properties to engineer antiferroelectric material response. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Two-dimensional photonic crystal cavities in ZnSe quantum well structures

Authors: Siqi Qiao, Nils von den Driesch, Xi Chen, Stefan Trellenkamp, Florian Lentz, Christoph Krause, Benjamin Bennemann, Thorsten Brazda, James M. LeBeau, Alexander Pawlis

Abstract: ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on… ▽ More ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on the successful implementation of two-dimensional (2D) PC cavities in strained ZnSe quantum wells (QW) on top of a novel AlAs supporting layer. This approach overcomes typical obstacles associated with PC membrane fabrication in strained materials, such as cracks and strain relaxation in the corresponding devices. We demonstrate the attainment of the required mechanical stability in our PC devices, complete strain retainment and effective vertical optical confinement. Structural analysis of our PC cavities reveals excellent etching anisotropy. Additionally, elemental map** in a scanning transmission electron microscope confirms the transformation of AlAs into AlOx by post-growth wet oxidation and reveals partial oxidation of ZnMgSe at the etched sidewalls in the PC. This knowledge is utilized to tailor FDTD simulations and to extract the ZnMgSe dispersion relation with small oxygen content. Optical characterization of the PC cavities with cross-polarized resonance scattering spectroscopy verifies the presence of cavity modes. The excellent agreement between simulation and measured cavity mode energies demonstrates wide tunability of the PC cavity and proves the pertinence of our model. This implementation of 2D PC cavities in the ZnSe material system establishes a solid foundation for future developments of ZnSe quantum devices. △ Less

Submitted 23 February, 2024; originally announced February 2024.

Sampling metrics for robust reconstructions in multislice ptychography: Theory and experiment

Authors: Colin Gilgenbach, Xi Chen, James M. LeBeau

Abstract: While multislice electron ptychography can provide thermal-vibration limited resolution and 3D information, it relies on the proper selection of many intertwined experimental and computational parameters. Here, we outline a theoretical basis for selecting experimental parameters to enable robust ptychographic reconstructions. We develop a series of physically informed metrics to describe the selec… ▽ More While multislice electron ptychography can provide thermal-vibration limited resolution and 3D information, it relies on the proper selection of many intertwined experimental and computational parameters. Here, we outline a theoretical basis for selecting experimental parameters to enable robust ptychographic reconstructions. We develop a series of physically informed metrics to describe the selection of experimental parameters in multislice ptychography. Image simulations are used to comprehensively evaluate the validity of these metrics over a broad range of experimental conditions. We develop two metrics, areal oversampling and Ronchigram magnification, which predict reconstruction success with high accuracy. Lastly, we validate these conclusions with experimental ptychographic data, and demonstrate close agreement between trends in simulated and experimental data. Using these metrics, we achieve experimental multislice reconstructions at a scan step of $1.0 \unit{Å/px}$, enabling large field-of-view ($>\!18\unit{nm}$), data-efficient reconstructions. These experimental design principles enable the routine and reliable use of multislice ptychography for materials characterization. △ Less

Submitted 25 November, 2023; originally announced November 2023.

Comments: 9 pages, 5 figures

Validation of machine-learned interatomic potentials via temperature-dependent electron thermal diffuse scattering

Authors: Dennis S. Kim, Michael Xu, James M. LeBeau

Abstract: Machine-learned interatomic potentials (MLIPs) show promise in accurately describing the physical properties of materials, but there is a need for a higher throughput method of validation. Here, we demonstrate using that MLIPs and molecular dynamics can accurately capture the potential energy landscape and lattice dynamics that are needed to describe electron thermal diffuse scattering. Using SrTi… ▽ More Machine-learned interatomic potentials (MLIPs) show promise in accurately describing the physical properties of materials, but there is a need for a higher throughput method of validation. Here, we demonstrate using that MLIPs and molecular dynamics can accurately capture the potential energy landscape and lattice dynamics that are needed to describe electron thermal diffuse scattering. Using SrTiO$_3$ as a test-bed at cryogenic and room temperatures, we compare electron thermal diffuse scattering simulations using different approximations to incorporate thermal motion. Only when the simulations are based on quantum mechanically accurate MLIPs in combination with path-integral molecular dynamics that include nuclear quantum effects, there is excellent agreement with experiment\end{abstract} △ Less

Submitted 4 March, 2023; originally announced March 2023.

Determination of Local Short-Range Order in TiVNbHf(Al)

Authors: Michael Xu, Shaolou Wei, Cemal C. Tasan, James M. LeBeau

Abstract: The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron micr… ▽ More The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron microscopy (STEM) paired with spatial statistics methods. To overcome the difficulties of short-range order (SRO) quantification with STEM when the components of an alloy exhibit large atomic number differences and near equiatomic ratios, 'null hypothesis' tests are used to separate experiment from a random chemical distribution. Experiment is found to deviate from both the case of an ideal random solid solution and a fully ordered structure with statistical significance. We also identify local chemical order in TiVNbHf and confirm and quantify the enhancement of SRO with the addition of Al. These results provide insights into local chemical order in the promising TiVNbHf(Al) refractory alloys while highlighting the utility of spatial statistics in characterizing nanoscale SRO in compositionally complex systems. △ Less

Submitted 3 February, 2023; originally announced February 2023.

A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy

Authors: Ida Sadeghi, Jack Van Sambeek, Tigran Simonian, Michael Xu, Kevin Ye, Valeria Nicolosi, James M. LeBeau, R. Jaramillo

Abstract: Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular bea… ▽ More Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites. △ Less

Submitted 29 December, 2022; v1 submitted 19 November, 2022; originally announced November 2022.

Correlating Local Chemical and Structural Order Using Geographic Information Systems-Based Spatial Statistics

Authors: Michael Xu, Abinash Kumar, James M. LeBeau

Abstract: Analysis of nanoscale short-range chemical and/or structural order via (scanning) transmission electron microscopy (S/TEM) imaging is fundamentally limited by projection of the three dimensional sample, which averages informational along the beam direction. Extracting statistically significant spatial correlations between the structure and chemistry determined from these two-dimensional datasets t… ▽ More Analysis of nanoscale short-range chemical and/or structural order via (scanning) transmission electron microscopy (S/TEM) imaging is fundamentally limited by projection of the three dimensional sample, which averages informational along the beam direction. Extracting statistically significant spatial correlations between the structure and chemistry determined from these two-dimensional datasets thus remains challenging. Here, we apply methods commonly used in Geographic Information Systems (GIS) to determine the spatial correlation between measures of local chemistry and structure from atomic-resolution STEM imaging of a compositionally complex relaxor, Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ (PMN). The approach is used to determine the type of ordering present and to quantify the spatial variation of chemical order, oxygen octahedral distortions, and oxygen octahedral tilts. The extent of autocorrelation and inter-feature correlation among these short-range ordered regions are then evaluated through a spatial covariance analysis, showing correlation as a function of distance. The results demonstrate that integrating GIS tools for analyzing microscopy datasets can serve to unravel subtle relationships among chemical and structural features in complex materials that can be hidden when ignoring their spatial distributions. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Towards Augmented Microscopy with Reinforcement Learning-Enhanced Workflows

Authors: Michael Xu, Abinash Kumar, James M. LeBeau

Abstract: Here, we report a case study implementation of reinforcement learning (RL) to automate operations in the scanning transmission electron microscopy (STEM) workflow. To do so, we design a virtual, prototypical RL environment to test and develop a network to autonomously align the electron beam without prior knowledge. Using this simulator, we evaluate the impact of environment design and algorithm h… ▽ More Here, we report a case study implementation of reinforcement learning (RL) to automate operations in the scanning transmission electron microscopy (STEM) workflow. To do so, we design a virtual, prototypical RL environment to test and develop a network to autonomously align the electron beam without prior knowledge. Using this simulator, we evaluate the impact of environment design and algorithm hyperparameters on alignment accuracy and learning convergence, showing robust convergence across a wide hyperparameter space. Additionally, we deploy a successful model on the microscope to validate the approach and demonstrate the value of designing appropriate virtual environments. Consistent with simulated results, the on-microscope RL model achieves convergence to the goal alignment after minimal training. Overall, the results highlight that by taking advantage of RL, microscope operations can be automated without the need for extensive algorithm design, taking another step towards augmenting electron microscopy with machine learning methods. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Authors: Xuanyi Zhang, Aubrey N. Penn, Lena Wysocki, Zhan Zhang, Paul H. M. van Loosdrecht, Lior Kornblum, James M. LeBeau, Ionela Lindfors-Vrejoiu, Divine P. Kumah

Abstract: Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetr… ▽ More Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO$_3$ films grown on Nb-doped SrTiO$_3$ substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO$_3$. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Antisite defects stabilized by antiphase boundaries in YFeO$_3$ thin films

Authors: Abinash Kumar, Konstantin Klyukin, Shuai Ning, Cigdem Ozsoy-Keskinbora, Mikhail Ovsyanko, Felix van Uden, Ruud Krijnen, Bilge Yildiz, Caroline A. Ross, James M. LeBeau

Abstract: YFeO$_3$ thin films are a recent addition to the family of multiferroic orthoferrites where Y\textsubscript{Fe} antisite defects and strain have been shown to introduce polar displacements while retaining magnetic properties. Complete control of the multiferroic properties, however, necessitates knowledge of the defects present and their potential role in modifying behavior. Here, we report the st… ▽ More YFeO$_3$ thin films are a recent addition to the family of multiferroic orthoferrites where Y\textsubscript{Fe} antisite defects and strain have been shown to introduce polar displacements while retaining magnetic properties. Complete control of the multiferroic properties, however, necessitates knowledge of the defects present and their potential role in modifying behavior. Here, we report the structure and chemistry of antiphase boundaries in multiferroic YFeO$_3$ thin films using aberration corrected scanning transmission electron microscopy combined with atomic resolution energy dispersive X-ray spectroscopy. We find that Fe\textsubscript{Y} antisites, which are not stable in the film bulk, periodically arrange along antiphase boundaries due to changes in the local environment. Using density functional theory, we show that the antiphase boundaries are polar and bi-stable, where the presence of Fe\textsubscript{Y} antisites significantly decreases the switching barrier. These results highlight how planar defects, such as antiphase boundaries, can stabilize point defects that would otherwise not be expected to form within the structure. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

Authors: M. Chrysler, J. Gabel, T. -L. Lee, A. N. Penn, B. E. Matthews, D. M. Kepaptsoglou, Q. M. Ramasse, J. R. Paudel, R. K. Sah, J. D. Grassi, Z. Zhu, A. X. Gray, J. M. LeBeau, S. R. Spurgeon, S. A. Chambers, P. V. Sushko, J. H. Ngai

Abstract: We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo… ▽ More We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Materials 5, 104603 (2021)

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

Authors: Ida Sadeghi, Kevin Ye, Michael Xu, James M. LeBeau, R. Jaramillo

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing g… ▽ More We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for develo** chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE. △ Less

Submitted 21 May, 2021; originally announced May 2021.

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Authors: Shuai Ning, Abinash Kumar, Konstantin Klyukin, Jong Heon Kim, Tingyu Su, Hyun-Suk Kim, James M. LeBeau, Bilge Yildiz, Caroline A. Ross

Abstract: Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-s… ▽ More Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental map** with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of YFe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Furthermore, a vertically aligned nanocomposite consisting of pillars of a magnetoelastic oxide CoFe2O4 embedded epitaxially in the YFeO3 matrix exhibits both robust ferroelectricity and ferrimagnetism at room temperature, as well as a noticeable strain-mediated magnetoelectric coupling effect. Our work uncovers the distinctive role of antisite defects in providing a novel mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications. △ Less

Submitted 18 March, 2021; originally announced March 2021.

Direct Imaging and Electronic Structure Modulation of Moiré Superlattices at the 2D/3D Interface

Authors: Kate Reidy, Georgios Varnavides, Joachim Dahl Thomsen, Abinash Kumar, Thang Pham, Arthur M. Blackburn, Polina Anikeeva, Prineha Narang, James M. LeBeau, Frances M. Ross

Abstract: The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111}… ▽ More The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 A moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques. △ Less

Submitted 7 July, 2022; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: 14 pages and 5 figures

Defect Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Authors: Han Yin, Abinash Kumar, James M. LeBeau, R. Jaramillo

Abstract: Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can b… ▽ More Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics. △ Less

Submitted 16 May, 2020; originally announced May 2020.

Comments: Text and supplemental merged into one file

Journal ref: Phys. Rev. Applied 15, 014014 (2021)

Decoding the complexities of lead-based relaxor ferroelectrics

Authors: Abinash Kumar, Jonathon N. Baker, Preston C. Bowes, Matthew J. Cabral, Shujun Zhang, Elizabeth Dickey, Douglas L. Irving, James M. LeBeau

Abstract: Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling are some of the most important functional materials with applications ranging from ultrasound imaging to actuators and sensors in microelectromechanical devices. Since their discovery nearly 60 years ago, the complexity of nanoscale chemical and structural heterogeneity in these systems has made understanding the orig… ▽ More Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling are some of the most important functional materials with applications ranging from ultrasound imaging to actuators and sensors in microelectromechanical devices. Since their discovery nearly 60 years ago, the complexity of nanoscale chemical and structural heterogeneity in these systems has made understanding the origins of their unique electromechanical properties a seemingly intractable problem. A full accounting of the mechanisms that connect local structure and chemistry with nanoscale fluctuations in polarization has, however, remained a need and a challenge. Here, we employ aberration-corrected scanning transmission electron microscopy (STEM) to quantify various types of nanoscale heterogeneity and their connection to local polarization in the prototypical relaxor ferroelectric system Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$-PbTiO3 (PMN-PT). We identify three main contributions that each depend on Ti content: chemical order, oxygen octahedral tilt, and oxygen octahedral distortion. These heterogeneities are found to be spatially correlated with low angle polar domain walls, indicating their role in disrupting long-range polarization. Specifically, these heterogeneities lead to nanoscale domain formation and the relaxor response. We further locate nanoscale regions of monoclinic distortion that correlate directly with Ti content and the electromechanical performance. Through this approach, the elusive connection between chemical heterogeneity, structural heterogeneity and local polarization is revealed, and the results validate models needed to develop the next generation of relaxor ferroelectric materials. △ Less

Submitted 13 November, 2019; originally announced November 2019.

Accounting for Location Measurement Error in Imaging Data with Application to Atomic Resolution Images of Crystalline Materials

Authors: Matthew J. Miller, Matthew J. Cabral, Elizabeth C. Dickey, James M. LeBeau, Brian J. Reich

Abstract: Scientists use imaging to identify objects of interest and infer properties of these objects. The locations of these objects are often measured with error, which when ignored leads to biased parameter estimates and inflated variance. Current measurement error methods require an estimate or knowledge of the measurement error variance to correct these estimates, which may not be available. Instead,… ▽ More Scientists use imaging to identify objects of interest and infer properties of these objects. The locations of these objects are often measured with error, which when ignored leads to biased parameter estimates and inflated variance. Current measurement error methods require an estimate or knowledge of the measurement error variance to correct these estimates, which may not be available. Instead, we create a spatial Bayesian hierarchical model that treats the locations as parameters, it using the image itself to incorporate positional uncertainty. We lower the computational burden by approximating the likelihood using a non-contiguous block design around the object locations. We apply this model in a materials science setting to study the relationship between the chemistry and displacement of hundreds of atom columns in crystal structures directly imaged via scanning transmission electron microscopy. Greater knowledge of this relationship can lead to engineering materials with improved properties of interest. We find strong evidence of a negative relationship between atom column displacement and the intensity of neighboring atom columns, which is related to the local chemistry. A simulation study shows our method corrects the bias in the parameter of interest and drastically improves coverage in high noise scenarios compared to non-measurement error models. △ Less

Submitted 13 May, 2020; v1 submitted 30 October, 2019; originally announced October 2019.

Comments: 29 pages including appendices, 4 figures, 13 page supplement

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Authors: Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn, Matthew Chrysler, Mark Bowden, Zihua Zhu, James M. Ablett, Tien-lin Lee, James M. LeBeau, Joseph C. Woicik, Peter V. Sushko, Scott A. Chambers, Joseph H. Ngai

Abstract: Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ… ▽ More Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-δ and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-δ / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-δ are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions. △ Less

Submitted 10 October, 2018; originally announced October 2018.

Confinement of magnetism in atomically-thin $La_{0.7}Sr_{0.3}CrO_3$/$La_{0.7}Sr_{0.3}MnO_3$ heterostructures

Authors: Sanaz Koohfar, Alexandru Bogdan Georgescu, Aubrey Penn, James M. LeBeau, Elke Arenholz, Divine Philip Kumah

Abstract: At crystalline interfaces where a valence mismatch exists, electronic and structural interactions may occur to relieve the polar mismatch leading to the stabilization of non-bulklike phases. We show that spontaneous reconstructions at polar $La_{0.7}Sr_{0.3}MnO_3$ interfaces are correlated with suppressed ferromagnetism for film thicknesses on the order of a unit cell. We investigate the structura… ▽ More At crystalline interfaces where a valence mismatch exists, electronic and structural interactions may occur to relieve the polar mismatch leading to the stabilization of non-bulklike phases. We show that spontaneous reconstructions at polar $La_{0.7}Sr_{0.3}MnO_3$ interfaces are correlated with suppressed ferromagnetism for film thicknesses on the order of a unit cell. We investigate the structural and magnetic properties of valence-matched $La_{0.7}Sr_{0.3}CrO_3$ - $La_{0.7}Sr_{0.3}MnO_3$ interfaces using a combination of high-resolution electron microscopy, first principles theory, synchrotron X-ray scattering and magnetic spectroscopy and temperature-dependent magnetometry. A combination of an antiferromagnetic coupling between the $La_{0.7}Sr_{0.3}CrO_3$ and $La_{0.7}Sr_{0.3}MnO_3$ layers and a suppression of interfacial polar distortions are found to result in robust long range ferromagnetic ordering for ultra-thin $La_{0.7}Sr_{0.3}MnO_3$. These results underscore the critical importance of interfacial structural and magnetic interactions in the design of devices based on two-dimensional oxide magnetic systems. △ Less

Submitted 3 May, 2019; v1 submitted 20 October, 2017; originally announced October 2017.

Journal ref: npj Quantum Materials,4, 25 (2019)

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$

Authors: Everett D. Grimley, Tony Schenk, Thomas Mikolajick, Uwe Schroeder, James M. LeBeau

Abstract: Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning… ▽ More Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning transmission electron microscopy to investigate the atomic structure of boundaries in these materials. In particular, we find orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries formed throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion. △ Less

Submitted 23 September, 2017; originally announced September 2017.

Numerical modeling of specimen geometry for quantitative energy dispersive X-ray spectroscopy

Authors: Weizong Xu, James M. LeBeau

Abstract: Transmission electron microscopy specimens typically exhibit local distortion at thin foil edges, which can influence the absorption of X-rays for quantitative energy dispersive X-ray spectroscopy (EDS). Here, we report a numerical, three-dimensional approach to model the geometry of general specimens and its influence on quantification when using single and multiple detector configurations. As a… ▽ More Transmission electron microscopy specimens typically exhibit local distortion at thin foil edges, which can influence the absorption of X-rays for quantitative energy dispersive X-ray spectroscopy (EDS). Here, we report a numerical, three-dimensional approach to model the geometry of general specimens and its influence on quantification when using single and multiple detector configurations. As a function of specimen tilt, we show that the model correctly predicts the asymmetric nature of X-ray counts and ratios. When using a single detector, we show that complex specimen geometries can introduce significant uncertainty in EDS quantification. Further, we show that this uncertainty can be largely negated by collection with multiple detectors placed symmetrically about the sample such as the FEI Super-X. Finally, based on guidance provided by the model, we propose methods to reduce quantification error introduced by the sample shape. The source code is available at https://github.com/subangstrom/superAngle. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Structure of Native Two-dimensional Oxides on III--Nitride Surfaces

Authors: J. Houston Dycus, Kelsey J. Mirrielees, Everett D. Grimley, Ronny Kirste, Seiji Mita, Zlatko Sitar, Ramon Collazo, Douglas L. Irving, James M. LeBeau

Abstract: When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used… ▽ More When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used materials, such as group III-nitrides, have not been unambiguously resolved, even though critical properties can depend sensitively on their presence. In this work, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of native two--dimensional oxides that form on AlN and GaN surfaces. Through atomic resolution imaging and spectroscopy, we show that the oxide layers are comprised of tetrahedra--octahedra cation--oxygen units, similar to bulk $θ$--Al$_2$O$_3$ and $β$--Ga$_2$O$_3$. By applying density functional theory, we show that the observed structures are more stable than previously proposed surface oxide models. We place the impact of these observations in the context of key III-nitride growth, device issues, and the recent discovery of two-dimnesional nitrides. △ Less

Submitted 13 August, 2017; originally announced August 2017.

Probing collective oscillation of $d$-orbital electrons at the nanoscale

Authors: Rohan Dhall, Derek Vigil-Fowler, J. Houston Dycus, Ronny Kirste, Seiji Mita, Zlatko Sitar, Ramon Collazo, James M. LeBeau

Abstract: Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin… ▽ More Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin of these spectral features is attributed to 3$d$--electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al$_{1-x}$Ga$_x$N due to the different polarizability of the $d$ electrons. Finally, we study the dependence of observed plasmon modes on Ga content, lending insight into plasmon coupling with electron--hole excitations. △ Less

Submitted 12 August, 2017; originally announced August 2017.

A Deep Convolutional Neural Network to Analyze Position Averaged Convergent Beam Electron Diffraction Patterns

Authors: Weizong Xu, James M. LeBeau

Abstract: We establish a series of deep convolutional neural networks to automatically analyze position averaged convergent beam electron diffraction patterns. The networks first calibrate the zero-order disk size, center position, and rotation without the need for pretreating the data. With the aligned data, additional networks then measure the sample thickness and tilt. The performance of the network is e… ▽ More We establish a series of deep convolutional neural networks to automatically analyze position averaged convergent beam electron diffraction patterns. The networks first calibrate the zero-order disk size, center position, and rotation without the need for pretreating the data. With the aligned data, additional networks then measure the sample thickness and tilt. The performance of the network is explored as a function of a variety of variables including thickness, tilt, and dose. A methodology to explore the response of the neural network to various pattern features is also presented. Processing patterns at a rate of $\sim$0.1 s/pattern, the network is shown to be orders of magnitude faster than a brute force method while maintaining accuracy. The approach is thus suitable for automatically processing big, 4D STEM data. We also discuss the generality of the method to other materials/orientations as well as a hybrid approach that combines the features of the neural network with least squares fitting for even more robust analysis. The source code is available at https://github.com/subangstrom/DeepDiffraction. △ Less

Submitted 3 August, 2017; originally announced August 2017.

Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3

Authors: Reza M. Moghadam, Zhiyong Xiao, Kamyar Ahmadi-Majlan, Everett D. Grimley, Mark Bowden, Phuong-Vu Ong, Scott A. Chambers, James M. Lebeau, Xia Hong, Peter V. Sushko, Joseph H. Ngai

Abstract: The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-… ▽ More The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices. △ Less

Submitted 28 February, 2017; originally announced March 2017.

In-situ real-space imaging of crystal surface reconstruction dynamics via electron microscopy

Authors: Weizong Xu, Preston C. Bowes, Everett D. Grimley, Douglas L. Irving, James M. LeBeau

Abstract: Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are important as they control reactions and mediate thin film growth. This is particularly true for complex oxides where certain terminating crystal planes are pol… ▽ More Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are important as they control reactions and mediate thin film growth. This is particularly true for complex oxides where certain terminating crystal planes are polar and have a net dipole moment. For polar terminations, reconstruction of atoms on the surface is the central mechanism to avoid the so called polar catastrophe. This adds to the complexity of the reconstruction where charge polarization and stoichiometry govern the final surface in addition to standard thermodynamic parameters such as temperature and partial pressure. Here we present direct, in-situ determination of polar SrTiO3 (110) surfaces at temperatures up to 900 C using cross-sectional aberration corrected scanning transmission electron microscopy (STEM). Under these conditions, we observe the coexistence of various surface structures that change as a function of temperature. As the specimen temperature is lowered, the reconstructed surface evolves due to thermal mismatch with the substrate. Periodic defects, similar to dislocations, are found in these surface structures and act to relieve stress due to mismatch. Combining STEM observations and electron spectroscopy with density functional theory, we find a combination of lattice misfit and charge compensation for stabilization. Beyond the characterization of these complex reconstructions, we have developed a general framework that opens a new pathway to simultaneously investigate the surface and near surface regions of single crystals as a function of environment. △ Less

Submitted 3 June, 2016; originally announced June 2016.

Direct observation of charge mediated lattice distortions in complex oxide solid solutions

Authors: Xiahan Sang, Everett D. Grimley, Changning Niu, Douglas L. Irving, James M. LeBeau

Abstract: Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced… ▽ More Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced imaging methods, we observed atom column specific, picometer-scale displacements induced by local chemistry in a complex oxide solid solution. Displacements predicted from density functional theory were found to correlate with the observed experimental trends. Further analysis of bonding and charge distribution were used to clarify the mechanisms responsible for the detected structural behavior. By extending the experimental electron microscopy measurements to previously inaccessible length scales, we identified correlated atomic displacements linked to bond differences within the complex oxide structure. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 11 pages, 3 figures