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Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Authors:
Raimondo Cecchini,
Christian Martella,
Claudia Wiemer,
Alessio Lamperti,
Alberto Debernardi,
Lucia Nasi,
Laura Lazzarini,
Alessandro Molle,
Massimo Longo
Abstract:
Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However…
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Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However, the exploitation of monolayer or few-layer antimonene and other 2D materials in novel opto-electronic devices is still hurdled by the lack of scalable processes. Here, we demonstrated the viability of a bottom-up process for the epitaxial growth of antimonene-like nanocrystals (ANCs), based on a Metal-Organic Chemical Vapor Deposition (MOCVD) process, assisted by gold nanoparticles (Au NPs) on commensurate (111)-terminated Ge surfaces. The growth mechanism was investigated by large- and local-area microstructural analysis, revealing that the etching of germanium, catalyzed by the Au NPs, led to the ANCs growth on the exposed Ge (111) planes. As a supportive picture, ab-initio calculations rationalized this epitaxial relationship in terms of compressively strained \b{eta}-phase ANCs. Our process could pave the way to the realization of large-area antimonene layers by a deposition process compatible with the current semiconductor manufacturing technology.
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Submitted 15 July, 2023;
originally announced July 2023.
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Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Authors:
Luca Seravalli,
Fiorenza Esposito,
Matteo Bosi,
Lucrezia Aversa,
Giovanna Trevisi,
Roberto Verrucchi,
Laura Lazzarini,
Francesca Rossi,
Filippo Fabbri
Abstract:
Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two dimensional semiconductor, as molybdenum disulfide, by employing different growth substrate with peculiar thermal properties. In this work we demonstrate that the built-in strain of MoS2 monolayers, grown on SiO2/Si…
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Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two dimensional semiconductor, as molybdenum disulfide, by employing different growth substrate with peculiar thermal properties. In this work we demonstrate that the built-in strain of MoS2 monolayers, grown on SiO2/Si substrate using liquid precursors chemical vapor deposition, is mainly dominated by the size of the monolayer. In fact, we identify a critical size equal to 20 um, from which the built-in strain increases drastically. The built-in strain is maximized for 60 um sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman modes separation becomes unreliable for monolayer with a lateral size above 20 um.
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Submitted 28 March, 2023;
originally announced March 2023.
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Characterization of multilayer stack parameters from X-ray reflectivity data using the PPM program: measurements and comparison with TEM results
Authors:
D. Spiga,
A. Mirone,
G. Pareschi,
R. Canestrari,
V. Cotroneo,
C. Ferrari,
C. Ferrero,
L. Lazzarini,
D. Vernani
Abstract:
Future hard (10 -100 keV) X-ray telescopes (SIMBOL-X, Con-X, HEXIT-SAT, XEUS) will implement focusing optics with multilayer coatings: in view of the production of these optics we are exploring several deposition techniques for the reflective coatings. In order to evaluate the achievable optical performance X-Ray Reflectivity (XRR) measurements are performed, which are powerful tools for the in-de…
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Future hard (10 -100 keV) X-ray telescopes (SIMBOL-X, Con-X, HEXIT-SAT, XEUS) will implement focusing optics with multilayer coatings: in view of the production of these optics we are exploring several deposition techniques for the reflective coatings. In order to evaluate the achievable optical performance X-Ray Reflectivity (XRR) measurements are performed, which are powerful tools for the in-depth characterization of multilayer properties (roughness, thickness and density distribution). An exact extraction of the stack parameters is however difficult because the XRR scans depend on them in a complex way. The PPM code, developed at ERSF in the past years, is able to derive the layer-by-layer properties of multilayer structures from semi-automatic XRR scan fittings by means of a global minimization procedure in the parameters space. In this work we will present the PPM modeling of some multilayer stacks (Pt/C and Ni/C) deposited by simple e-beam evaporation. Moreover, in order to verify the predictions of PPM, the obtained results are compared with TEM profiles taken on the same set of samples. As we will show, PPM results are in good agreement with the TEM findings. In addition, we show that the accurate fitting returns a physically correct evaluation of the variation of layers thickness through the stack, whereas the thickness trend derived from TEM profiles can be altered by the superposition of roughness profiles in the sample image.
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Submitted 8 September, 2015;
originally announced September 2015.
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Measure and capacity of wandering domains in Gevrey near-integrable exact symplectic systems
Authors:
Laurent Lazzarini,
Jean-Pierre Marco,
David Sauzin
Abstract:
A wandering domain for a diffeomorphism is an open connected set whose iterates are pairwise disjoint. We endow A^n = T^n x R^n with its usual exact symplectic structure. An integrable diffeomorphism Φ^h, i.e. the time-one map of a Hamiltonian h which depends only on the action variables, has no nonempty wandering domains. The aim of this paper is to estimate the size (measure and Gromov capacity)…
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A wandering domain for a diffeomorphism is an open connected set whose iterates are pairwise disjoint. We endow A^n = T^n x R^n with its usual exact symplectic structure. An integrable diffeomorphism Φ^h, i.e. the time-one map of a Hamiltonian h which depends only on the action variables, has no nonempty wandering domains. The aim of this paper is to estimate the size (measure and Gromov capacity) of wandering domains in the case of an exact symplectic perturbation of Φ^h , in the analytic or Gevrey category. Upper estimates are related to Nekhoroshev theory, lower estimates are related to examples of Arnold diffusion. This is a contribution to the "quantitative Hamiltonian perturbation theory" initiated in previous works on the optimality of long term stability estimates and diffusion times; our emphasis here is on discrete systems because this is the natural setting to study wandering domains.
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Submitted 8 July, 2015;
originally announced July 2015.
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Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires
Authors:
R. Lo Conte,
E. Martinez,
A. Hrabec,
A. Lamperti,
T. Schulz,
L. Nasi,
L. Lazzarini,
F. Maccherozzi,
S. S. Dhesi,
B. Ocker,
C. H. Marrows,
T. A. Moore,
M. Klaeui
Abstract:
We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain w…
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We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle θSH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.
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Submitted 12 September, 2014;
originally announced September 2014.
