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Shadow Mask Molecular Beam Epitaxy for In-Plane Gradient Permittivity Materials
Authors:
S. Mukherjee,
S. R. Sitaram,
X. Wang,
S. Law
Abstract:
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is needed. One way to achieve this goal is through gradient permittivity materials, in which the material permittivity changes as a function of position in the plane. I…
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Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is needed. One way to achieve this goal is through gradient permittivity materials, in which the material permittivity changes as a function of position in the plane. In this paper, we demonstrate the synthesis of infrared gradient permittivity materials using shadow mask molecular beam epitaxy. The permittivity of our material changes as a function of position in the lateral direction, allowing us to confine varying wavelengths of infrared light at varying horizontal locations. We see an electric field enhancement corresponding to a wavenumber gradient of ~650 cm$^{-1}$ to 900 cm$^{-1}$ over an in-plane gradient width of ~13 $μ$ m on the flat mesa of our sample. In addition, we see a wavenumber gradient of ~900 cm$^{-1}$ to 1250 cm$^{-1}$ over an in-plane gradient width of ~13 $μ$m on the slope of our sample. These two different wavenumber gradient regions develop on two opposite sides of our material. This demonstration of a scalable method of creating an in-plane gradient permittivity material could be leveraged for the creation of a variety of miniature infrared devices, such as an ultracompact spectrometer.
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Submitted 23 June, 2024;
originally announced June 2024.
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Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Authors:
Qihua Zhang,
Maria Hilse,
Wesley Auker,
Jennifer Gray,
Stephanie Law
Abstract:
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy (MBE) synthesis of SnTe (111) thin films on I…
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Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy (MBE) synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te:Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te:Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with x-ray rocking curve full-width-at-half-maxima (FWHM) of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space map** indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.
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Submitted 21 June, 2024;
originally announced June 2024.
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Exploring selective image matching methods for zero-shot and few-sample unsupervised domain adaptation of urban canopy prediction
Authors:
John Francis,
Stephen Law
Abstract:
We explore simple methods for adapting a trained multi-task UNet which predicts canopy cover and height to a new geographic setting using remotely sensed data without the need of training a domain-adaptive classifier and extensive fine-tuning. Extending previous research, we followed a selective alignment process to identify similar images in the two geographical domains and then tested an array o…
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We explore simple methods for adapting a trained multi-task UNet which predicts canopy cover and height to a new geographic setting using remotely sensed data without the need of training a domain-adaptive classifier and extensive fine-tuning. Extending previous research, we followed a selective alignment process to identify similar images in the two geographical domains and then tested an array of data-based unsupervised domain adaptation approaches in a zero-shot setting as well as with a small amount of fine-tuning. We find that the selective aligned data-based image matching methods produce promising results in a zero-shot setting, and even more so with a small amount of fine-tuning. These methods outperform both an untransformed baseline and a popular data-based image-to-image translation model. The best performing methods were pixel distribution adaptation and fourier domain adaptation on the canopy cover and height tasks respectively.
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Submitted 16 April, 2024;
originally announced April 2024.
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Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
Authors:
Mingyu Yu,
Sahani Amaya Iddawela,
Jiayang Wang,
Maria Hilse,
Jessica L. Thompson,
Danielle Reifsnyder Hickey,
Susan B Sinnott,
Stephanie Law
Abstract:
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift…
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GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with the rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-van der Waals epitaxial growth.
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Submitted 14 June, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
Authors:
Mingyu Yu,
Maria Hilse,
Qihua Zhang,
Yongchen Liu,
Zhengtianye Wang,
Stephanie Law
Abstract:
Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical perfo…
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Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M=Ga, In, Ge, Sn; X=S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs.
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Submitted 5 March, 2024;
originally announced March 2024.
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Hybridized magnonic materials for THz frequency applications
Authors:
D. -Q. To,
A. Rai,
J. M. O. Zide,
S. Law,
J. Q. Xiao,
M. B. Jungfleisch,
M. F. Doty
Abstract:
The capability of magnons to hybridize and strongly couple with diverse excitations offers a promising avenue for realizing and controlling emergent properties that hold significant potential for applications in devices, circuits, and information processing. In this letter, we present recent theoretical and experimental developments in magnon-based hybrid systems, focusing on the combination of ma…
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The capability of magnons to hybridize and strongly couple with diverse excitations offers a promising avenue for realizing and controlling emergent properties that hold significant potential for applications in devices, circuits, and information processing. In this letter, we present recent theoretical and experimental developments in magnon-based hybrid systems, focusing on the combination of magnon excitation in an antiferromagnet with other excitations, namely plasmons in a topological insulator, phonons in a 2D AFM, and photons. The existence of THz frequency magnons, plasmons, and phonons makes magnon-based hybrid systems particularly appealing for high-operating-speed devices. In this context, we explore several directions to advance magnon hybrid systems, including strong coupling between a surface plasmon and magnon polariton in a TI/AFM bilayer, a giant spin Nernst effect induced by magnon phonon coupling in 2D AFMs, and control of magnon-photon coupling using spin torque.
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Submitted 27 January, 2024; v1 submitted 19 January, 2024;
originally announced January 2024.
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Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
Authors:
Mingyu Yu,
Jiayang Wang,
Sahani A. Iddawela,
Molly McDonough,
Jessica L. Thompson,
Susan B Sinnott,
Danielle Reifsnyder Hickey,
Stephanie Law
Abstract:
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D) strongly-bonded materials, but has also been used as a substrate for layered, van der Waals (vdW)-bonded chalcogenide film growth. However, GaAs(111)B…
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GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D) strongly-bonded materials, but has also been used as a substrate for layered, van der Waals (vdW)-bonded chalcogenide film growth. However, GaAs(111)B wafers cannot be directly used for growing epitaxial vdW chalcogenide films for two reasons: (1) the GaAs surface has a substantial number of dangling bonds that need to be passivated for vdW layers growth; (2) the substrate surface is covered with a thin epi-ready oxide layer which must be removed before film growth. In this paper, we optimize the method for deoxidizing GaAs(111)B substrates under a Se overpressure and successfully create a smooth, deoxidized, and passivated substrate for subsequent growth of vdW chalcogenide materials. We demonstrate the benefits of this method for the growth of vdW chalcogenide thin films using GaSe as a representative of vdW chalcogenides. In addition, we find that severely aged substrates have difficulty maintaining a smooth surface during the deoxidation and passivation process and cause GaSe crystals to nucleate in random shapes and orientations. We describe a method using water droplet testing to determine the age of the substrate. Finally, X-ray photoelectron spectroscopy (XPS) characterization reveals that the natural aging of GaAs(111)B in the air results in an increase in surface oxides, Ga2O3 and As2O3, while exposure to ultraviolet (UV)-ozone not only enhances the contents of these two oxides but also generates a new oxide, As2O5. Our research contributes to expanding the compatibility of GaAs(111)B with diverse growth materials and the production of high-quality heterostructure devices.
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Submitted 18 January, 2024;
originally announced January 2024.
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Spectroscopy of van der Waals nanomaterials: Opportunities and Challenges
Authors:
Sivakumar Vishnuvardhan Mambakkam,
Stephanie Law
Abstract:
The study of van der Waals (vdW) materials has seen increased interest in recent years, due to the wide range of uses for these materials because of their unique mechanical, electronic, and optical properties. This area has recently expanded further into studying the behavior of vdW nanomaterials, as decreasing dimensions open up opportunities to interact with these materials in new ways. However,…
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The study of van der Waals (vdW) materials has seen increased interest in recent years, due to the wide range of uses for these materials because of their unique mechanical, electronic, and optical properties. This area has recently expanded further into studying the behavior of vdW nanomaterials, as decreasing dimensions open up opportunities to interact with these materials in new ways. However, measuring the band structures of nanomaterials, which is key to understanding how confinement affects material properties and interactions, comes with several challenges. In this review, we survey a range of techniques for synthesizing and characterizing vdW nanomaterials, in order to outline the key material and characterization challenges. This includes controlling the Fermi level in vdW nanoparticles, preparing these particles for either ensemble or individual particle measurement, as well as protecting the pristine surface from oxidation.
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Submitted 16 October, 2023;
originally announced October 2023.
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Self-supervised learning unveils change in urban housing from street-level images
Authors:
Steven Stalder,
Michele Volpi,
Nicolas Büttner,
Stephen Law,
Kenneth Harttgen,
Esra Suel
Abstract:
Cities around the world face a critical shortage of affordable and decent housing. Despite its critical importance for policy, our ability to effectively monitor and track progress in urban housing is limited. Deep learning-based computer vision methods applied to street-level images have been successful in the measurement of socioeconomic and environmental inequalities but did not fully utilize t…
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Cities around the world face a critical shortage of affordable and decent housing. Despite its critical importance for policy, our ability to effectively monitor and track progress in urban housing is limited. Deep learning-based computer vision methods applied to street-level images have been successful in the measurement of socioeconomic and environmental inequalities but did not fully utilize temporal images to track urban change as time-varying labels are often unavailable. We used self-supervised methods to measure change in London using 15 million street images taken between 2008 and 2021. Our novel adaptation of Barlow Twins, Street2Vec, embeds urban structure while being invariant to seasonal and daily changes without manual annotations. It outperformed generic embeddings, successfully identified point-level change in London's housing supply from street-level images, and distinguished between major and minor change. This capability can provide timely information for urban planning and policy decisions toward more liveable, equitable, and sustainable cities.
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Submitted 21 September, 2023; v1 submitted 20 September, 2023;
originally announced September 2023.
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Uncertainty-Aware Probabilistic Graph Neural Networks for Road-Level Traffic Accident Prediction
Authors:
Xiaowei Gao,
Xinke Jiang,
Dingyi Zhuang,
Huanfa Chen,
Shenhao Wang,
Stephen Law,
James Haworth
Abstract:
Traffic accidents present substantial challenges to human safety and socioeconomic development in urban areas. Develo** a reliable and responsible traffic accident prediction model is crucial to addressing growing public safety concerns and enhancing the safety of urban mobility systems. Traditional methods face limitations at fine spatiotemporal scales due to the sporadic nature of highrisk acc…
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Traffic accidents present substantial challenges to human safety and socioeconomic development in urban areas. Develo** a reliable and responsible traffic accident prediction model is crucial to addressing growing public safety concerns and enhancing the safety of urban mobility systems. Traditional methods face limitations at fine spatiotemporal scales due to the sporadic nature of highrisk accidents and the predominance of nonaccident characteristics. Furthermore, while most current models show promising occurrence prediction, they overlook the uncertainties arising from the inherent nature of accidents, and then fail to adequately map the hierarchical ranking of accident risk values for more precise insights. To address these issues, we introduce the Spatiotemporal ZeroInflated Tweedie Graph Neural Network ,STZITDGNN, the first uncertainty-aware probabilistic graph deep learning model in roadlevel traffic accident prediction for multi-steps. This model integrates the interpretability of the statistical Tweedie family model and the expressive power of graph neural networks. Its decoder innovatively employs a compound Tweedie model, a Poisson distribution to model the frequency of accident occurrences and a Gamma distribution to assess injury severity, supplemented by a zeroinflated component to effectively identify exessive non-incident instances. Empirical tests using realworld traffic data from London, UK, demonstrate that the STZITDGNN surpasses other baseline models across multiple benchmarks and metrics, including accident risk value prediction, uncertainty minimisation, nonaccident road identification and accident occurrence accuracy. Our study demonstrates that STZTIDGNN can effectively inform targeted road monitoring, thereby improving urban road safety strategies.
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Submitted 21 June, 2024; v1 submitted 10 September, 2023;
originally announced September 2023.
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Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates
Authors:
Mingyu Yu,
Lottie Murray,
Matthew Doty,
Stephanie Law
Abstract:
Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic properties when it reaches the atomically-thin regime. However, its van der Waals epitaxial growth, especially for the atomically-thin films, has seldom been stud…
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Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic properties when it reaches the atomically-thin regime. However, its van der Waals epitaxial growth, especially for the atomically-thin films, has seldom been studied. In this paper, we used molecular beam epitaxy to synthesize Ga2Se2 single-crystal films with a surface roughness down to 1.82 nm on c-plane sapphire substrates by optimizing substrate temperature, Se:Ga flux ratio, and growth rate. Then we used a 3-step mode to grow Ga2Se2 films with a thickness as low as 3 tetralayers and a surface roughness as low as 0.61 nm, far exceeding the performance of direct growth. Finally, we found that the surface morphology strongly depends on the Se:Ga flux ratio, and higher growth rates widened the suitable flux ratio window for growing Ga2Se2. Overall, this work advances the understanding of the vdW epitaxy growth mechanism for post-transition metal monochalcogenides on sapphire substrates.
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Submitted 16 October, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
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Some stable plethysms
Authors:
Stacey Law,
Yuji Okitani
Abstract:
In this note, we prove some new stability results for plethysm coefficients. As special cases, we verify a conjecture of Wildon, and show the stability of sequences recently predicted by Bessenrodt, Bowman and Paget to be weakly increasing.
In this note, we prove some new stability results for plethysm coefficients. As special cases, we verify a conjecture of Wildon, and show the stability of sequences recently predicted by Bessenrodt, Bowman and Paget to be weakly increasing.
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Submitted 13 December, 2022;
originally announced December 2022.
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Positivity of Sylow branching coefficients of symmetric groups
Authors:
Stacey Law
Abstract:
In this article we investigate the positivity of Sylow branching coefficients for symmetric groups when $p = 3$. In particular, we complete the discussion begun by Giannelli and the author in arXiv:1712.02642 (J. Algebra) and developed in arXiv:1909.09446 (J. London Math. Soc.) concerning the case of odd primes.
In this article we investigate the positivity of Sylow branching coefficients for symmetric groups when $p = 3$. In particular, we complete the discussion begun by Giannelli and the author in arXiv:1712.02642 (J. Algebra) and developed in arXiv:1909.09446 (J. London Math. Soc.) concerning the case of odd primes.
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Submitted 26 January, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
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Estimating Chicago's tree cover and canopy height using multi-spectral satellite imagery
Authors:
John Francis,
Stephen Law
Abstract:
Information on urban tree canopies is fundamental to mitigating climate change [1] as well as improving quality of life [2]. Urban tree planting initiatives face a lack of up-to-date data about the horizontal and vertical dimensions of the tree canopy in cities. We present a pipeline that utilizes LiDAR data as ground-truth and then trains a multi-task machine learning model to generate reliable e…
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Information on urban tree canopies is fundamental to mitigating climate change [1] as well as improving quality of life [2]. Urban tree planting initiatives face a lack of up-to-date data about the horizontal and vertical dimensions of the tree canopy in cities. We present a pipeline that utilizes LiDAR data as ground-truth and then trains a multi-task machine learning model to generate reliable estimates of tree cover and canopy height in urban areas using multi-source multi-spectral satellite imagery for the case study of Chicago.
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Submitted 9 December, 2022;
originally announced December 2022.
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Phonon-mediated strong coupling between a three-dimensional topological insulator and a two-dimensional antiferromagnetic material
Authors:
D. Quang To,
Weipeng Wu,
Subhash Bhatt,
Yongchen Liu,
Anderson Janotti,
Joshua M. O. Zide,
Mark J. H. Ku,
John Q. Xiao,
M. Benjamin Jungfleisch,
Stephanie Law,
Matthew F. Doty
Abstract:
Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if sufficiently strong, could offer emergent hybrid material properties that enable new functionality exceeding what is possible in any individual materi…
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Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if sufficiently strong, could offer emergent hybrid material properties that enable new functionality exceeding what is possible in any individual material constituent. In this work, we study strong coupling between THz excitations in a three dimensional (3D) topological insulator and a quasi-two dimensional (2D) antiferromagnetic material resulting in a new hybridized mode, namely a surface Dirac plasmon-phonon-magnon polariton. We find that the interaction between a surface Dirac plasmon polariton in the 3D TI and a magnon polariton in the 2D AFM is mediated by the phonon coupling in the 3D TI material. The coupling of phonons with an electromagnetic wave propagating in the 3D TI enhances the permittivity of the TI thin film in a way that results in a strong correlation between the dispersion of Dirac plasmon polaritons on the surfaces of the TI with the thickness of the TI. As a result, the dispersion of surface Dirac plasmon polaritons in the TI can be tuned toward resonance with the magnon polariton in the AFM material by varying the TI's thickness, thereby enhancing the strength of the coupling between the excitations in the two materials. The strength of this coupling, which results in the surface Dirac plasmon-phonon-magnon polariton, can be parameterized by the amplitude of the avoided-crossing splitting between the two polariton branches at the magnon resonance frequency...
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Submitted 5 December, 2022;
originally announced December 2022.
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Topological insulator-based Dirac hyperbolic metamaterial with large mode indices
Authors:
Zhengtianye Wang,
Saadia Nasir,
Yongchen Liu,
Sivakumar Vishnuvardhan Mambakkam,
Mingyu Yu,
Stephanie Law
Abstract:
Hyperbolic metamaterials (HMMs) are engineered materials with a hyperbolic isofrequency surface, enabling a range of novel phenomena and applications including negative refraction, enhanced sensing, and subdiffraction imaging, focusing, and waveguiding. Existing HMMs primarily work in the visible and infrared spectral range due to the inherent properties of their constituent materials. Here we dem…
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Hyperbolic metamaterials (HMMs) are engineered materials with a hyperbolic isofrequency surface, enabling a range of novel phenomena and applications including negative refraction, enhanced sensing, and subdiffraction imaging, focusing, and waveguiding. Existing HMMs primarily work in the visible and infrared spectral range due to the inherent properties of their constituent materials. Here we demonstrate a THz-range Dirac HMM using topological insulators (TIs) as the building blocks. We find that the structure houses up to three high-wavevector volume plasmon polariton (VPP) modes, consistent with transfer matrix modeling. The VPPs have mode indices ranging from 126 to 531, 10-100x larger than observed for VPP modes in traditional media while maintaining comparable quality factors. We attribute these properties to the two-dimensional Dirac nature of the electrons occupying the topological insulator surface states. Because these are van der Waals materials, these structures can be grown at a wafer-scale on a variety of substrates, allowing them to be integrated with existing THz structures and enabling next-generation THz optical devices.
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Submitted 17 September, 2022;
originally announced September 2022.
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Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator
Authors:
Yang Wang,
Binbin Liu,
Yue-Xin Huang,
Sivakumar V. Mambakkam,
Yong Wang,
Shengyuan A. Yang,
Xian-Lei Sheng,
Stephanie A. Law,
John Q. Xiao
Abstract:
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnit…
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In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.
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Submitted 16 December, 2022; v1 submitted 15 September, 2022;
originally announced September 2022.
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Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy
Authors:
Saadia Nasir,
Walter J. Smith,
Thomas E. Beechem,
Stephanie Law
Abstract:
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi$_2$Se$_3$ may exhibit quantum spin Hall states. However, growing coalesce…
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Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi$_2$Se$_3$ may exhibit quantum spin Hall states. However, growing coalesced ultra-thin Bi$_2$Se$_3$ films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi$_2$Se$_3$ films having thickness down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pre-treatment -- growing and decomposing a few layers of \BiSe before the actual deposition -- is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Overall, coalesced ultra-thin Bi$_2$Se$_3$ films with lower surface roughness enables thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.
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Submitted 31 August, 2022; v1 submitted 30 August, 2022;
originally announced August 2022.
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Surface plasmon-phonon-magnon polariton in a topological insulator-antiferromagnetic bilayer structure
Authors:
D. Quang To,
Zhengtianye Wang,
Yongchen Liu,
Weipeng Wu,
M. Benjamin Jungfleisch,
John Q. Xiao,
Joshua M. O. Zide,
Stephanie Law,
Matthew F. Doty
Abstract:
We present a robust technique for computationally studying surface polariton modes in hybrid materials. We use a semi-classical model that allows us to understand the physics behind the interactions between collective excitations of the hybrid system and develop a scattering and transfer matrix method that imposes the proper boundary conditions to solve Maxwell equations and derive a general equat…
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We present a robust technique for computationally studying surface polariton modes in hybrid materials. We use a semi-classical model that allows us to understand the physics behind the interactions between collective excitations of the hybrid system and develop a scattering and transfer matrix method that imposes the proper boundary conditions to solve Maxwell equations and derive a general equation describing the surface polariton in a heterostructure consisting of N constituent materials. We apply this method to a test structure composed of a topological insulator (TI) and an antiferromagnetic material (AFM) to study the resulting surface Dirac plasmon-phonon-magnon polariton (DPPMP). We find that interactions between the excitations of the two constituents result in the formation of hybridized modes and the emergence of avoided-crossing points in the dispersion relations for the DPPMP. For the specific case of a Bi2Se3 TI material, the polariton branch with low frequency below 2 THz redshifts upon increasing the thickness of TI thin film, which leads to an upper bound on the thickness of the TI layer that will allow an observable signature of strong coupling and the emergence of hybridized states. We also find that the strength of the coupling between the TI and the AFM, which is parameterized by the amplitude of the avoided-crossing splitting between the two polariton branches at the magnon resonance frequency, depends on the magnitude of the magnetic dipole and the line width of the magnon in the AFM material as well as on the Fermi energy of Dirac plasmon in the TI. Finally, we predict that materials with extremely high quality, i.e. low scattering loss rate, are essential to achieve an experimentally-observable strong coupling between a TI and AFM.
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Submitted 15 May, 2022;
originally announced May 2022.
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Observation of nonlinear planar Hall effect in magnetic insulator/topological insulator heterostructures
Authors:
Yang Wang,
Sivakumar V. Mambakkam,
Yue-Xin Huang,
Yong Wang,
Yi Ji,
Cong Xiao,
Shengyuan A. Yang,
Stephanie A. Law,
John Q. Xiao
Abstract:
Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of n…
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Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium iron garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic gadolinium gallium garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi2Se3 depends linearly on the external magnetic field, while that in YIG/Bi2Se3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.
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Submitted 15 September, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems
Authors:
Yongchen Liu,
Wilder Acuna,
Huairuo Zhang,
Dai Q. Ho,
Ruiqi Hu,
Zhengtianye Wang,
Anderson Janotti,
Garnett Bryant,
Albert V. Davydov,
Joshua M. O. Zide,
Stephanie Law
Abstract:
Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different ma…
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Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials. Here, we explore the growth of Bi2Se3, a topological insulator (TI) material that could serve as a plasmonic waveguide in THz integrated devices, on technologically-important GaAs (001) substrates. We explore surface treatments and find that atomically smooth GaAs surface is critical to achieving high-quality Bi2Se3 films despite the relatively weak film/substrate interaction. Calculations indicate that the Bi2Se3/GaAs interface is likely selenium-terminated and shows no evidence of chemical bonding between the Bi2Se3 and the substrate. These results are a guide for integrating van der Waals materials with conventional semiconductor substrates and serve as the first steps toward achieving an on-chip THz integrated system.
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Submitted 29 August, 2022; v1 submitted 4 February, 2022;
originally announced February 2022.
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Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency
Authors:
D. Quang To,
Zhengtianye Wang,
Q. Dai Ho,
Ruiqi Hu,
Wilder Acuna,
Yongchen Liu,
Garnett W. Bryant,
Anderson Janotti,
Joshua M. O. Zide,
Stephanie Law,
Matthew F. Doty
Abstract:
We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se…
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We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the do** level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The dam** rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials.
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Submitted 12 January, 2022;
originally announced January 2022.
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On plethysms and Sylow branching coefficients
Authors:
Stacey Law,
Yuji Okitani
Abstract:
We prove a recursive formula for plethysm coefficients of the form $a^μ_{λ,(m)}$, generalising results on plethysms due to Bruns--Conca--Varbaro and de Boeck--Paget--Wildon. From this we deduce a stability result and resolve two conjectures of de Boeck concerning plethysms, as well as obtain new results on Sylow branching coefficients for symmetric groups for the prime 2. Further, letting $P_n$ de…
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We prove a recursive formula for plethysm coefficients of the form $a^μ_{λ,(m)}$, generalising results on plethysms due to Bruns--Conca--Varbaro and de Boeck--Paget--Wildon. From this we deduce a stability result and resolve two conjectures of de Boeck concerning plethysms, as well as obtain new results on Sylow branching coefficients for symmetric groups for the prime 2. Further, letting $P_n$ denote a Sylow 2-subgroup of $S_n$, we show that almost all Sylow branching coefficients of $S_n$ corresponding to the trivial character of $P_n$ are positive.
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Submitted 26 August, 2022; v1 submitted 27 October, 2021;
originally announced October 2021.
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In-Plane Plasmon Coupling in Topological Insulator Bi$_2$Se$_3$ Thin Films
Authors:
Saadia Nasir,
Zhengtianye Wang,
Sivakumar V. Mambakkam,
Stephanie Law
Abstract:
The surface states of the 3D topological insulator (TI), Bi$_2$Se$_3$, are known to host two-dimensional Dirac plasmon polaritons (DPPs) in the terahertz spectral range. In TI thin films, the DPPs excited on the top and bottom surfaces couple, leading to an acoustic and an optical plasmon mode. Vertical coupling in these materials is therefore reasonable well-understood, but in-plane coupling amon…
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The surface states of the 3D topological insulator (TI), Bi$_2$Se$_3$, are known to host two-dimensional Dirac plasmon polaritons (DPPs) in the terahertz spectral range. In TI thin films, the DPPs excited on the top and bottom surfaces couple, leading to an acoustic and an optical plasmon mode. Vertical coupling in these materials is therefore reasonable well-understood, but in-plane coupling among localized TI DPPs has yet to be investigated. In this paper, we demonstrate in-plane DPP coupling in TI stripe arrays and show that they exhibit dipole-dipole type coupling. The coupling becomes negligible with the lattice constant is greater than approximately 2.8 times the stripe width, which is comparable to results for in-plane coupling of localized plasmons excited on metallic nanoparticles or graphene plasmon polaritons. This understanding could be leveraged for the creation of TI-based metasurfaces.
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Submitted 17 September, 2021;
originally announced September 2021.
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Interface quality in GaSb/AlSb short period superlattices
Authors:
Md Nazmul Alam,
Joseph R. Matson,
Patrick Sohr,
Joshua D. Caldwell,
Stephanie Law
Abstract:
Heterostructures including the members of the 6.1Å semiconductor family (AlSb, GaSb, and InAs) are used in infrared optoelectronic devices as well as a variety of other applications. Short-period superlattices of these materials are also of interest for creating composite materials with designer infrared dielectric functions. The conditions needed to create sharp InAs/GaSb and InAs/AlSb interfaces…
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Heterostructures including the members of the 6.1Å semiconductor family (AlSb, GaSb, and InAs) are used in infrared optoelectronic devices as well as a variety of other applications. Short-period superlattices of these materials are also of interest for creating composite materials with designer infrared dielectric functions. The conditions needed to create sharp InAs/GaSb and InAs/AlSb interfaces are well known, but the AlSb/GaSb interface is much less well-understood. In this article, we test a variety of interventions designed to improve interface sharpness in AlSb/GaSb short-period superlattices. These interventions include substrate temperature, III:Sb flux ratio, and the use of a bismuth surfactant. Superlattices are characterized by high-resolution x-ray diffraction and infrared spectroscopy. We find that AlSb/GaSb short-period superlattices have a wide growth window over which sharp interfaces can be obtained.
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Submitted 16 September, 2021;
originally announced September 2021.
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Strong coupling in semiconductor hyperbolic metamaterials
Authors:
Patrick Sohr,
Dongxia Wei,
Zhengtianye Wang,
Stephanie Law
Abstract:
Semiconductor-based layered hyperbolic metamaterials (HMMs) house high-wavevector volume plasmon polariton (VPP) modes in the infrared spectral range. VPP modes have successfully been exploited in the weak-coupling regime through the enhanced Purcell effect. In this paper, we experimentally demonstrate strong coupling between the VPP modes in a semiconductor HMM and the intersubband transition of…
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Semiconductor-based layered hyperbolic metamaterials (HMMs) house high-wavevector volume plasmon polariton (VPP) modes in the infrared spectral range. VPP modes have successfully been exploited in the weak-coupling regime through the enhanced Purcell effect. In this paper, we experimentally demonstrate strong coupling between the VPP modes in a semiconductor HMM and the intersubband transition of epitaxially-embedded quantum wells. We observe clear anticrossings in the dispersion curves for the zeroth-, first-, second-, and third-order VPP modes, resulting in upper and lower polariton branches for each mode. This demonstration sets the stage for the creation of novel infrared optoelectronic structures combining HMMs with embedded epitaxial emitter or detector structures.
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Submitted 12 November, 2021; v1 submitted 10 August, 2021;
originally announced August 2021.
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Real-space nanoimaging of THz polaritons in the topological insulator Bi2Se3
Authors:
Shu Chen,
Andrei Bylinkin,
Zhengtianye Wang,
Martin Schnell,
Greeshma Chandan,
Peining Li,
Alexey Y. Nikitin,
Stephanie Law,
Rainer Hillenbrand
Abstract:
Plasmon polaritons in topological insulators attract attention from a fundamental perspective and for potential THz photonic applications. Although polaritons have been observed by THz far-field spectroscopy on topological insulator microstructures, real-space imaging of propagating THz polaritons has been elusive so far. Here, we show spectroscopic THz near-field images of thin Bi2Se3 layers (pro…
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Plasmon polaritons in topological insulators attract attention from a fundamental perspective and for potential THz photonic applications. Although polaritons have been observed by THz far-field spectroscopy on topological insulator microstructures, real-space imaging of propagating THz polaritons has been elusive so far. Here, we show spectroscopic THz near-field images of thin Bi2Se3 layers (prototypical topological insulators) revealing polaritons with up to 12 times increased momenta as compared to photons of the same energy and decay times of about 0.48 ps, yet short propagation lengths. From the images we determine and analyze the polariton dispersion, showing that the polaritons can be explained by the coupling of THz radiation to various combinations of Dirac and massive carriers at the Bi2Se3 surfaces, massive bulk carriers and optical phonons. Our work provides critical insights into the nature of THz polaritons in topological insulators and establishes instrumentation and methodology for imaging of THz polaritons.
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Submitted 24 March, 2022; v1 submitted 22 July, 2021;
originally announced July 2021.
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Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
Authors:
Zhengtianye Wang,
Stephanie Law
Abstract:
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by non-magnetic defects. A high purity topological insulator thin film can be easily grown via molecular beam e…
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The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by non-magnetic defects. A high purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi2Se3 thin films grown by MBE. In addition, growths of topological trivial insulator (Bi0.5In0.5)2Se3 (BIS) are also investigated. BIS is often used as a buffer layer or separation layer for topological insulator heterostructures. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. Growth temperature is a crucial control parameter for the van der Waals epitaxy for both types of substrates. For Bi2Se3 on GaAs, the surface passivation status determines the dominant growth mechanism.
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Submitted 10 November, 2021; v1 submitted 20 July, 2021;
originally announced July 2021.
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Growth of Topological Insulator Bi2Se3 Particles on GaAs via Droplet Epitaxy
Authors:
Sivakumar Vishnuvardhan Mambakkam,
Saadia Nasir,
Wilder Acuna,
Joshua M. O. Zide,
Stephanie Law
Abstract:
The discovery of topological insulators (TIs) and their unique electronic properties has motivated research into a variety of applications, including quantum computing. It has been proposed that TI surface states will be energetically discretized in a quantum dot nanoparticle. These discretized states could then be used as basis states for a qubit that is more resistant to decoherence. In this wor…
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The discovery of topological insulators (TIs) and their unique electronic properties has motivated research into a variety of applications, including quantum computing. It has been proposed that TI surface states will be energetically discretized in a quantum dot nanoparticle. These discretized states could then be used as basis states for a qubit that is more resistant to decoherence. In this work, prototypical TI Bi2Se3 nanoparticles are grown on GaAs (001) using the droplet epitaxy technique, and we demonstrate the control of nanoparticle height, area, and density by changing the duration of bismuth deposition and substrate temperature. Within the growth window studied, nanoparticles ranged from 5-15 nm tall with an 8-18nm equivalent circular radius, and the density could be relatively well controlled by changing the substrate temperature and bismuth deposition time.
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Submitted 10 August, 2021; v1 submitted 18 May, 2021;
originally announced May 2021.
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Torsion pairs and Ringel duality for Schur algebras
Authors:
Karin Erdmann,
Stacey Law
Abstract:
Let $A$ be a finite-dimensional algebra over a field of characteristic $p>0$. We use a functorial approach involving torsion pairs to construct embeddings of endomorphism algebras of basic projective $A$--modules $P$ into those of the torsion submodules of $P$. As an application, we show that blocks of both the classical and quantum Schur algebras $S(2,r)$ and $S_q(2,r)$ are Morita equivalent as q…
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Let $A$ be a finite-dimensional algebra over a field of characteristic $p>0$. We use a functorial approach involving torsion pairs to construct embeddings of endomorphism algebras of basic projective $A$--modules $P$ into those of the torsion submodules of $P$. As an application, we show that blocks of both the classical and quantum Schur algebras $S(2,r)$ and $S_q(2,r)$ are Morita equivalent as quasi-hereditary algebras to their Ringel duals if they contain $2p^k$ simple modules for some $k$.
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Submitted 12 April, 2021;
originally announced April 2021.
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Self-assembled nano-columns in Bi2Se3 grown by molecular beam epitaxy
Authors:
Theresa P. Ginley,
Stephanie Law
Abstract:
Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually triangular and a terraced morphology. In this paper, we demonstrate that Bi2Se3, a prototypical vdW material, will form a nano-column morphology when grown on GaAs(00…
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Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually triangular and a terraced morphology. In this paper, we demonstrate that Bi2Se3, a prototypical vdW material, will form a nano-column morphology when grown on GaAs(001) substrates. This morphology is explained by a relatively strong film/substrate interaction, long adatom diffusion lengths, and a high reactive selenium flux. This discovery paves the way toward growth of self-assembled vdW structures even in the absence of strain.
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Submitted 24 March, 2021;
originally announced March 2021.
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Sylow branching coefficients and a conjecture of Malle and Navarro
Authors:
Eugenio Giannelli,
Stacey Law,
Jason Long,
Carolina Vallejo
Abstract:
We prove that a finite group $G$ has a normal Sylow $p$-subgroup $P$ if, and only if, every irreducible character of $G$ appearing in the permutation character $({\bf 1}_P)^G$ with multiplicity coprime to $p$ has degree coprime to $p$. This confirms a prediction by Malle and Navarro from 2012. Our proof of the above result depends on a reduction to simple groups and ultimately on a combinatorial a…
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We prove that a finite group $G$ has a normal Sylow $p$-subgroup $P$ if, and only if, every irreducible character of $G$ appearing in the permutation character $({\bf 1}_P)^G$ with multiplicity coprime to $p$ has degree coprime to $p$. This confirms a prediction by Malle and Navarro from 2012. Our proof of the above result depends on a reduction to simple groups and ultimately on a combinatorial analysis of the properties of Sylow branching coefficients for symmetric groups.
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Submitted 19 February, 2021; v1 submitted 12 February, 2021;
originally announced February 2021.
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Jane Jacobs in the Sky: Predicting Urban Vitality with Open Satellite Data
Authors:
Sanja Šćepanović,
Sagar Joglekar,
Stephen Law,
Daniele Quercia
Abstract:
The presence of people in an urban area throughout the day -- often called 'urban vitality' -- is one of the qualities world-class cities aspire to the most, yet it is one of the hardest to achieve. Back in the 1970s, Jane Jacobs theorized urban vitality and found that there are four conditions required for the promotion of life in cities: diversity of land use, small block sizes, the mix of econo…
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The presence of people in an urban area throughout the day -- often called 'urban vitality' -- is one of the qualities world-class cities aspire to the most, yet it is one of the hardest to achieve. Back in the 1970s, Jane Jacobs theorized urban vitality and found that there are four conditions required for the promotion of life in cities: diversity of land use, small block sizes, the mix of economic activities, and concentration of people. To build proxies for those four conditions and ultimately test Jane Jacobs's theory at scale, researchers have had to collect both private and public data from a variety of sources, and that took decades. Here we propose the use of one single source of data, which happens to be publicly available: Sentinel-2 satellite imagery. In particular, since the first two conditions (diversity of land use and small block sizes) are visible to the naked eye from satellite imagery, we tested whether we could automatically extract them with a state-of-the-art deep-learning framework and whether, in the end, the extracted features could predict vitality. In six Italian cities for which we had call data records, we found that our framework is able to explain on average 55% of the variance in urban vitality extracted from those records.
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Submitted 28 January, 2021;
originally announced February 2021.
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Linear characters of Sylow subgroups of symmetric groups
Authors:
Eugenio Giannelli,
Stacey Law,
Jason Long
Abstract:
Let $p$ be any prime. Let $P_n$ be a Sylow $p$-subgroup of the symmetric group $S_n$. Let $φ$ and $ψ$ be linear characters of $P_n$ and let $N$ be the normaliser of $P_n$ in $S_n$. In this article we show that the inductions of $φ$ and $ψ$ to $S_n$ are equal if, and only if, $φ$ and $ψ$ are $N$--conjugate. This is an analogue for symmetric groups of a result of Navarro for $p$-solvable groups.
Let $p$ be any prime. Let $P_n$ be a Sylow $p$-subgroup of the symmetric group $S_n$. Let $φ$ and $ψ$ be linear characters of $P_n$ and let $N$ be the normaliser of $P_n$ in $S_n$. In this article we show that the inductions of $φ$ and $ψ$ to $S_n$ are equal if, and only if, $φ$ and $ψ$ are $N$--conjugate. This is an analogue for symmetric groups of a result of Navarro for $p$-solvable groups.
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Submitted 24 June, 2021; v1 submitted 15 October, 2020;
originally announced October 2020.
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Explaining Classifiers using Adversarial Perturbations on the Perceptual Ball
Authors:
Andrew Elliott,
Stephen Law,
Chris Russell
Abstract:
We present a simple regularization of adversarial perturbations based upon the perceptual loss. While the resulting perturbations remain imperceptible to the human eye, they differ from existing adversarial perturbations in that they are semi-sparse alterations that highlight objects and regions of interest while leaving the background unaltered. As a semantically meaningful adverse perturbations,…
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We present a simple regularization of adversarial perturbations based upon the perceptual loss. While the resulting perturbations remain imperceptible to the human eye, they differ from existing adversarial perturbations in that they are semi-sparse alterations that highlight objects and regions of interest while leaving the background unaltered. As a semantically meaningful adverse perturbations, it forms a bridge between counterfactual explanations and adversarial perturbations in the space of images. We evaluate our approach on several standard explainability benchmarks, namely, weak localization, insertion deletion, and the pointing game demonstrating that perceptually regularized counterfactuals are an effective explanation for image-based classifiers.
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Submitted 30 March, 2021; v1 submitted 19 December, 2019;
originally announced December 2019.
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Sylow branching coefficients for symmetric groups
Authors:
Eugenio Giannelli,
Stacey Law
Abstract:
Let $p\ge 5$ be a prime and let $n$ be a natural number. In this article we describe the irreducible constituents of the induced characters $φ\big\uparrow^{\mathfrak{S}_n}$ for arbitrary linear characters $φ$ of a Sylow $p$-subgroup of the symmetric group $\mathfrak{S}_n$, generalising earlier results of the authors. By doing so, we introduce Sylow branching coefficients for symmetric groups.
Let $p\ge 5$ be a prime and let $n$ be a natural number. In this article we describe the irreducible constituents of the induced characters $φ\big\uparrow^{\mathfrak{S}_n}$ for arbitrary linear characters $φ$ of a Sylow $p$-subgroup of the symmetric group $\mathfrak{S}_n$, generalising earlier results of the authors. By doing so, we introduce Sylow branching coefficients for symmetric groups.
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Submitted 20 September, 2019;
originally announced September 2019.
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An unsupervised approach to Geographical Knowledge Discovery using street level and street network images
Authors:
Stephen Law,
Mateo Neira
Abstract:
Recent researches have shown the increasing use of machine learn-ing methods in geography and urban analytics, primarily to extract features and patterns from spatial and temporal data using a supervised approach. Researches integrating geographical processes in machine learning models and the use of unsupervised approacheson geographical data for knowledge discovery had been sparse. This research…
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Recent researches have shown the increasing use of machine learn-ing methods in geography and urban analytics, primarily to extract features and patterns from spatial and temporal data using a supervised approach. Researches integrating geographical processes in machine learning models and the use of unsupervised approacheson geographical data for knowledge discovery had been sparse. This research contributes to the ladder, where we show how latent variables learned from unsupervised learning methods on urbanimages can be used for geographic knowledge discovery. In particular, we propose a simple approach called Convolutional-PCA(ConvPCA) which are applied on both street level and street network images to find a set of uncorrelated and ordered visual latentcomponents. The approach allows for meaningful explanations using a combination of geographical and generative visualisations to explore the latent space, and to show how the learned representation can be used to predict urban characteristics such as streetquality and street network attributes. The research also finds that the visual components from the ConvPCA model achieves similaraccuracy when compared to less interpretable dimension reduction techniques.
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Submitted 11 October, 2019; v1 submitted 18 June, 2019;
originally announced June 2019.
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Density-matrix description of partially coherent spin-orbit wave packets produced in short-laser-pulse photodetachment
Authors:
S. M. K. Law,
G. F. Gribakin
Abstract:
We investigate orbital alignment dynamics within the valence shell of atoms in coherently excited $j=3/2,1/2$ fine-structure manifolds generated by short-pulse photodetachment of F$^-$, Cl$^-$ and Br$^-$ anions. Using Keldysh-type theory, we calculate the density matrix of the residual atoms generated by few-cycle pulses, whose elements determine the populations and coherence among the electronic…
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We investigate orbital alignment dynamics within the valence shell of atoms in coherently excited $j=3/2,1/2$ fine-structure manifolds generated by short-pulse photodetachment of F$^-$, Cl$^-$ and Br$^-$ anions. Using Keldysh-type theory, we calculate the density matrix of the residual atoms generated by few-cycle pulses, whose elements determine the populations and coherence among the electronic states. Our calculations demonstrate that the degree of atomic coherence can be represented by a near universal function of the ratio between the pulse duration $\tildeτ_p$ and the beat period $τ_{j'j}$ of the atomic system, which allows one to characterize the coherence generated in atomic states.
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Submitted 16 August, 2018;
originally announced August 2018.
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Take a Look Around: Using Street View and Satellite Images to Estimate House Prices
Authors:
Stephen Law,
Brooks Paige,
Chris Russell
Abstract:
When an individual purchases a home, they simultaneously purchase its structural features, its accessibility to work, and the neighborhood amenities. Some amenities, such as air quality, are measurable while others, such as the prestige or the visual impression of a neighborhood, are difficult to quantify. Despite the well-known impacts intangible housing features have on house prices, limited att…
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When an individual purchases a home, they simultaneously purchase its structural features, its accessibility to work, and the neighborhood amenities. Some amenities, such as air quality, are measurable while others, such as the prestige or the visual impression of a neighborhood, are difficult to quantify. Despite the well-known impacts intangible housing features have on house prices, limited attention has been given to systematically quantifying these difficult to measure amenities. Two issues have led to this neglect. Not only do few quantitative methods exist that can measure the urban environment, but that the collection of such data is both costly and subjective.
We show that street image and satellite image data can capture these urban qualities and improve the estimation of house prices. We propose a pipeline that uses a deep neural network model to automatically extract visual features from images to estimate house prices in London, UK. We make use of traditional housing features such as age, size, and accessibility as well as visual features from Google Street View images and Bing aerial images in estimating the house price model. We find encouraging results where learning to characterize the urban quality of a neighborhood improves house price prediction, even when generalizing to previously unseen London boroughs.
We explore the use of non-linear vs. linear methods to fuse these cues with conventional models of house pricing, and show how the interpretability of linear models allows us to directly extract proxy variables for visual desirability of neighborhoods that are both of interest in their own right, and could be used as inputs to other econometric methods. This is particularly valuable as once the network has been trained with the training data, it can be applied elsewhere, allowing us to generate vivid dense maps of the visual appeal of London streets.
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Submitted 21 October, 2019; v1 submitted 18 July, 2018;
originally announced July 2018.
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On permutation characters and Sylow $p$-subgroups of $\mathfrak{S}_n$
Authors:
Eugenio Giannelli,
Stacey Law
Abstract:
Let $p$ be an odd prime and let $n$ be a natural number. In this article we determine the irreducible constituents of the permutation module induced by the action of the symmetric group $\mathfrak{S}_n$ on the cosets of a Sylow $p$-subgroup $P_n$. As a consequence, we determine the number of irreducible representations of the corresponding Hecke algebra $\mathcal{H}(\mathfrak{S}_n, P_n, 1_{P_n})$.
Let $p$ be an odd prime and let $n$ be a natural number. In this article we determine the irreducible constituents of the permutation module induced by the action of the symmetric group $\mathfrak{S}_n$ on the cosets of a Sylow $p$-subgroup $P_n$. As a consequence, we determine the number of irreducible representations of the corresponding Hecke algebra $\mathcal{H}(\mathfrak{S}_n, P_n, 1_{P_n})$.
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Submitted 7 December, 2017;
originally announced December 2017.
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On the $p'$-subgraph of the Young graph
Authors:
Eugenio Giannelli,
Stacey Law,
Stuart Martin
Abstract:
Let $p$ be a prime number. In this article we study the restriction to $\mathfrak{S}_{n-1}$ of irreducible characters of degree coprime to $p$ of $\mathfrak{S}_n$. In particular, we study the combinatorial properties of the subgraph $\mathbb{Y}_{p'}$ of the Young graph $\mathbb{Y}$. This is an extension to odd primes of the work done by Ayyer, Prasad and Spallone for $p=2$.
Let $p$ be a prime number. In this article we study the restriction to $\mathfrak{S}_{n-1}$ of irreducible characters of degree coprime to $p$ of $\mathfrak{S}_n$. In particular, we study the combinatorial properties of the subgraph $\mathbb{Y}_{p'}$ of the Young graph $\mathbb{Y}$. This is an extension to odd primes of the work done by Ayyer, Prasad and Spallone for $p=2$.
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Submitted 2 July, 2017;
originally announced July 2017.
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Urban Analytics: Multiplexed and Dynamic Community Networks
Authors:
Weisi Guo,
Guillem Mosquera Donate,
Stephen Law,
Samuel Johnson,
Maria Liakata,
Alan Wilson
Abstract:
In the past decade, cities have experienced rapid growth, expansion, and changes in their community structure. Many aspects of critical urban infrastructure are closely coupled with the human communities that they serve. Urban communities are composed of a multiplex of overlap** factors which can be distinguished into cultural, religious, social-economic, political, and geographical layers. In t…
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In the past decade, cities have experienced rapid growth, expansion, and changes in their community structure. Many aspects of critical urban infrastructure are closely coupled with the human communities that they serve. Urban communities are composed of a multiplex of overlap** factors which can be distinguished into cultural, religious, social-economic, political, and geographical layers. In this paper, we review how increasingly available heterogeneous mobile big data sets can be leveraged to detect the community interaction structure using natural language processing and machine learning techniques. A number of community layer and interaction detection algorithms are then reviewed, with a particular focus on robustness, stability, and causality of evolving communities. The better understanding of the structural dynamics and multiplexed relationships can provide useful information to inform both urban planning policies and shape the design of socially coupled urban infrastructure systems.
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Submitted 11 December, 2018; v1 submitted 17 June, 2017;
originally announced June 2017.
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Comment on "Direct photodetachment of F$^-$ by mid-infrared few-cycle femtosecond laser pulses"
Authors:
G. F. Gribakin,
S. M. K. Law
Abstract:
Multiphoton detachment of F$^-$ by strong few-cycle laser pulses was studied by Shearer and Monteith using a Keldysh-type approach [Phys. Rev. A 88, 033415 (2013)]. We believe that this work contained errors in the calculation of the detachment amplitude and photoelectron spectra. We describe the necessary corrections to the theory and show that the results, in particular, the interference feature…
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Multiphoton detachment of F$^-$ by strong few-cycle laser pulses was studied by Shearer and Monteith using a Keldysh-type approach [Phys. Rev. A 88, 033415 (2013)]. We believe that this work contained errors in the calculation of the detachment amplitude and photoelectron spectra. We describe the necessary corrections to the theory and show that the results, in particular, the interference features of the photoelectron spectra, appear noticeably different.
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Submitted 26 August, 2016;
originally announced August 2016.
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Dynamics of atomic spin-orbit-state wave packets produced by short-pulse laser photodetachment
Authors:
S. M. K. Law,
G. F. Gribakin
Abstract:
We analyse the experiment by Hultgren et al. [Phys. Rev. A {\bf 87}, 031404 (2013)] on orbital alignment and quantum beats in coherently excited atomic fine-structure manifolds produced by short-pulse laser photodetachment of C$^-$, Si$^-$ and Ge$^-$ negative ions, and derive a formula that describes the beats. Analysis of the experimental data enables us to extract the non-coherent background con…
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We analyse the experiment by Hultgren et al. [Phys. Rev. A {\bf 87}, 031404 (2013)] on orbital alignment and quantum beats in coherently excited atomic fine-structure manifolds produced by short-pulse laser photodetachment of C$^-$, Si$^-$ and Ge$^-$ negative ions, and derive a formula that describes the beats. Analysis of the experimental data enables us to extract the non-coherent background contribution for each species, and indicates the need for a full density matrix treatment of the problem.
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Submitted 25 August, 2016;
originally announced August 2016.
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Electron rescattering in strong-field photodetachment of F$^-$
Authors:
O. Hassouneh,
S. Law,
S. F. C. Shearer,
A. C. Brown,
H. W. van der Hart
Abstract:
We present ab initio studies of photoelectron spectra for above threshold detachment (ATD) of F$^-$ anions in short, 1300 nm and 1800 nm laser pulses. We identify and assess the importance of electron rescattering in strong-field photodetachment of a negative ion through comparison with an analytic, Keldysh-type approach, demonstrating the capability of ab-initio computation in the challenging nea…
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We present ab initio studies of photoelectron spectra for above threshold detachment (ATD) of F$^-$ anions in short, 1300 nm and 1800 nm laser pulses. We identify and assess the importance of electron rescattering in strong-field photodetachment of a negative ion through comparison with an analytic, Keldysh-type approach, demonstrating the capability of ab-initio computation in the challenging near-IR regime. We further assess the influence of the strong electron correlation on the photodetachment.
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Submitted 19 March, 2015;
originally announced March 2015.
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Know The Star, Know the Planet. IV. A Stellar Companion to the Host star of the Eccentric Exoplanet HD 8673b
Authors:
Lewis C. Roberts, Jr.,
Brian D. Mason,
Christopher R. Neyman,
Yanqin Wu,
Reed L. Riddle,
J. Christopher Shelton,
John Angione,
Christoph Baranec,
Antonin Bouchez,
Khanh Bui,
Rick Burruss,
Mahesh Burse,
Pravin Chordia,
Ernest Croner,
Hillol Das,
Richard G. Dekany,
Stephen Guiwits,
David Hale,
John Henning,
Shrinivas Kulkarni Nicholas Law,
Dan McKenna,
Jennifer Milburn,
Dean Palmer,
Sujit Punnadi,
A. N. Ramaprakash
, et al. (6 additional authors not shown)
Abstract:
HD 8673 hosts a massive exoplanet in a highly eccentric orbit (e=0.723). Based on two epochs of speckle interferometry a previous publication identified a candidate stellar companion. We observed HD 8673 multiple times with the 10 m Keck II telescope, the 5 m Hale telescope, the 3.63 m AEOS telescope and the 1.5m Palomar telescope in a variety of filters with the aim of confirming and characterizi…
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HD 8673 hosts a massive exoplanet in a highly eccentric orbit (e=0.723). Based on two epochs of speckle interferometry a previous publication identified a candidate stellar companion. We observed HD 8673 multiple times with the 10 m Keck II telescope, the 5 m Hale telescope, the 3.63 m AEOS telescope and the 1.5m Palomar telescope in a variety of filters with the aim of confirming and characterizing the stellar companion. We did not detect the candidate companion, which we now conclude was a false detection, but we did detect a fainter companion. We collected astrometry and photometry of the companion on six epochs in a variety of filters. The measured differential photometry enabled us to determine that the companion is an early M dwarf with a mass estimate of 0.33-0.45 M?. The companion has a projected separation of 10 AU, which is one of the smallest projected separations of an exoplanet host binary system. Based on the limited astrometry collected, we are able to constrain the orbit of the stellar companion to a semi-major axis of 35{60 AU, an eccentricity ? 0.5 and an inclination of 75{85?. The stellar companion has likely strongly in uenced the orbit of the exoplanet and quite possibly explains its high eccentricity.
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Submitted 26 February, 2015; v1 submitted 23 February, 2015;
originally announced February 2015.
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Combinatorial Realization of the Hopf Algebra of Sashes
Authors:
Shirley Law
Abstract:
A general lattice theoretic construction of Reading constructs Hopf subalgebras of the Malvenuto-Reutenauer Hopf algebra (MR) of permutations. The products and coproducts of these Hopf subalgebras are defined extrinsically in terms of the embedding in MR. The goal of this paper is to find an intrinsic combinatorial description of a particular one of these Hopf subalgebras. This Hopf algebra has a…
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A general lattice theoretic construction of Reading constructs Hopf subalgebras of the Malvenuto-Reutenauer Hopf algebra (MR) of permutations. The products and coproducts of these Hopf subalgebras are defined extrinsically in terms of the embedding in MR. The goal of this paper is to find an intrinsic combinatorial description of a particular one of these Hopf subalgebras. This Hopf algebra has a natural basis given by permutations that we call Pell permutations. The Pell permutations are in bijection with combinatorial objects that we call sashes, that is, tilings of a 1 by n rectangle with three types of tiles: black 1 by 1 squares, white 1 by 1 squares, and white 1 by 2 rectangles. The bijection induces a Hopf algebra structure on sashes. We describe the product and coproduct in terms of sashes, and the natural partial order on sashes. We also describe the dual coproduct and dual product of the dual Hopf algebra of sashes.
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Submitted 15 July, 2014;
originally announced July 2014.
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Measurement of junction conductance and proximity effect at superconductor/semiconductor junctions
Authors:
Michael Vissers,
Victor K. Chua,
Stephanie A. Law,
Smitha Vishveshwara,
James N. Eckstein
Abstract:
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect provides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface con…
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The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect provides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface conductance is in series with resistance of transport in the semiconductor. Both of these change, and it is impossible to separate them without more information. We have devised a new three terminal device that provides two resistance measurements that are sufficient to extract both the junction conductance and the two dimensional sheet resistance under the superconducting contact. We have compared junctions between Nb and InAs and Nb and 30% InGaAs all grown before being removed from the ultra high vacuum molecular beam epitaxy growth system. The most transparent junctions are to InAs, where the transmission coefficient per Landauer mode is greater than 0.6. Contacts made with ex-situ deposition are substantially more opaque. We find that for the most transparent junctions, the largest fractional change as the temperature is lowered is to the resistance of the semiconductor.
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Submitted 24 February, 2014;
originally announced February 2014.
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A Class of Inert N-tuplet Models with Radiative Neutrino Mass and Dark Matter
Authors:
Sandy S. C. Law,
Kristian L. McDonald
Abstract:
We present a class of models with radiative neutrino mass and stable dark-matter candidates. Neutrino mass is generated by a one-loop diagram with the same topography as Ma's 2006 proposal (which used an inert scalar-doublet and singlet fermion). We generalize this approach and determine all variants with new fields no larger than the adjoint representation. When the neutrino mass diagram contains…
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We present a class of models with radiative neutrino mass and stable dark-matter candidates. Neutrino mass is generated by a one-loop diagram with the same topography as Ma's 2006 proposal (which used an inert scalar-doublet and singlet fermion). We generalize this approach and determine all variants with new fields no larger than the adjoint representation. When the neutrino mass diagram contains a Majorana mass insertion there are two possibilities, both of which are known. If the mass insertion is of the Dirac type there are seven additional models, two of which are excluded by direct-detection experiments. The other five models are also constrained, such that only scalar dark-matter is viable. There are cases with an inert singlet, an inert doublet, and an inert triplet, providing a natural setting for inert N-tuplet models of dark matter, with the additional feature of achieving radiative neutrino mass. We show that some of the models admit a simple explanation for the (requisite) discrete symmetry, and briefly discuss cases with representations larger than the adjoint, which can admit a connection to the astrophysical gamma-ray signal.
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Submitted 23 September, 2013; v1 submitted 28 May, 2013;
originally announced May 2013.
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The Simplest Models of Radiative Neutrino Mass: Excluding Simplified Zee Models and Beyond
Authors:
Sandy S. C. Law,
Kristian L. McDonald
Abstract:
The complexity of radiative neutrino-mass models can be judged by: (i) whether they require the imposition of ad hoc symmetries, (ii) the number of new multiplets they introduce, and (iii) the number of arbitrary parameters that appear. Adopting the view that the imposition of arbitrary new symmetries is the least appealing approach, the simplest models have two new multiplets and a minimal number…
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The complexity of radiative neutrino-mass models can be judged by: (i) whether they require the imposition of ad hoc symmetries, (ii) the number of new multiplets they introduce, and (iii) the number of arbitrary parameters that appear. Adopting the view that the imposition of arbitrary new symmetries is the least appealing approach, the simplest models have two new multiplets and a minimal number of new parameters. With this in mind, we search for the simplest models of radiative neutrino mass. We are lead to two new models, containing a real scalar triplet and a charged scalar doublet (respectively), in addition to the charged singlet scalar considered by Zee [h^+\sim(1,1,2)]. The new models are essentially simplified versions of the Zee model and appear to be \emph{the simplest} models of radiative neutrino mass. However, these models are only of pedagogical interest; despite successfully generating nonzero masses, present-day data is sufficient to rule them out. The lessons learned from these models also enable one to exclude a more general class of radiative models. Moving beyond the minimal cases, we find a new model of two-loop masses that employs the charged doublet Φ\sim(1,2,3) and the doubly-charged scalar k^{++}\sim(1,1,4).
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Submitted 26 March, 2013;
originally announced March 2013.