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Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets
Authors:
**zhi Li,
Thomas J. Kools,
Hamed Pezeshki,
Joao M. B. E. Joosten,
Jianing Li,
Junta Igarashi,
Julius Hohlfeld,
Reinoud Lavrijsen,
Stephane Mangin,
Gregory Malinowski,
Bert Koopmans
Abstract:
Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on…
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Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on the AOS and MDS of [Co/Gd]n (n = 1, 2) using ps optical pulses across a large composition range. We theoretically and experimentally show that a large Gd layer thickness can enhance the AOS energy efficiency and maximum pulse duration. We have identified two augmenting roles of Gd in extending the maximum pulse duration. On the inter-atomic level, we found that more Gd offers a prolonged angular momentum supply to Co. On the micromagnetic level, a higher Gd content brings the system to be closer to magnetic compensation in the equilibrized hot state, thereby reducing the driving force for thermally assisted nucleation of domain walls, combating the formation of a MDS. Our study presents a composition overview of AOS in [Co/Gd]n and offers useful physical insights regarding AOS fundamentals as well as the projected photonic integration.
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Submitted 23 June, 2024;
originally announced June 2024.
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Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets
Authors:
Shen Li,
Mouad Fattouhi,
Tianxun Huang,
Chen Lv,
Mark C. H. de Jong,
**zhi Li,
Xiaoyang Lin,
Felipe Garcia-Sanchez,
Eduardo Martinez,
Stéphane Mangin,
Bert Koopmans,
Weisheng Zhao,
Reinoud Lavrijsen
Abstract:
The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been…
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The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications.
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Submitted 19 March, 2024;
originally announced March 2024.
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Understanding voltage-controlled magnetic anisotropy effect for the manipulation of dipolar-dominated propagating spin waves
Authors:
Adrien. A. D. Petrillo,
Mouad Fattouhi,
Adriano Di Pietro,
Marta Alerany Solé,
Luis Lopez Diaz,
Gianfranco Durin,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computi…
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Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computing solutions. Employing micromagnetic simulations, we assess the feasibility of utilizing spin waves in DE mode in conjunction with localized voltage-induced alterations in surface anisotropy to enable low-energy logic operations. Our findings underscore the critical importance of selecting an optimal excitation frequency and gate width, which significantly influence the efficiency of the phase shift induced in propagating spin waves. Notably, we demonstrate that a realistic phase shift of 2.5$\left[ π\ \text{mrad}\right]$ can be achieved at a Co(5nm)/MgO material system via the VCMA effect. Moreover, by tuning the excitation frequency, Co layer thickness, gate width, and the use of a GdO\textsubscript{x} dielectric, we illustrate the potential to enhance the phase shift by a factor of 200 when compared to MgO dielectrics. This research contributes valuable insights towards develo** next-generation computing technologies with reduced energy consumption.
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Submitted 5 February, 2024;
originally announced February 2024.
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Integrated Magneto-photonic Non-Volatile Multi-Bit Memory
Authors:
Hamed Pezeshki,
**zhi Li,
Reinoud Lavrijsen,
Martijn Heck,
Bert Koopmans
Abstract:
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization sta…
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We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing 8 bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for develo** an ultrafast photonically-addressable spintronic memory and may also empower novel opportunities for photonically-driven spintronic-based neuromorphic computing.
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Submitted 4 February, 2024;
originally announced February 2024.
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Ultrafast single-pulse all-optical switching in synthetic ferrimagnetic Tb/Co/Gd multilayers
Authors:
Julian Hintermayr,
**zhi Li,
Roy Rosenkamp,
Youri L. W. van Hees,
Junta Igarashi,
Stéphane Mangin,
Reinoud Lavrijsen,
Grégory Malinowski,
Bert Koopmans
Abstract:
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of varying Tb thicknesses to disentangle the role of the two rare earth elements. Even though the role of magnetic compensation has been considered to be crucial, w…
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In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of varying Tb thicknesses to disentangle the role of the two rare earth elements. Even though the role of magnetic compensation has been considered to be crucial, we find that the threshold fluence for switching is largely independent of the Tb content. Moreover, we identify the timescale for the magnetization to cross zero to be within the first ps after laser excitation using time-resolved MOKE. We conclude that the switching is governed mostly by interactions between Co and Gd.
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Submitted 28 July, 2023; v1 submitted 2 June, 2023;
originally announced June 2023.
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Aging and passivation of magnetic properties in Co/Gd bilayers
Authors:
T. J. Kools,
Y. L. W. van Hees,
K. Poissonnier,
P. Li,
B. Barcones Campo,
M. A. Verheijen,
B. Koopmans,
R. Lavrijsen
Abstract:
Synthetic ferrimagnets based on Co and Gd bear promise for directly bridging the gap between volatile information in the photonic domain and non-volatile information in the magnetic domain, without the need for any intermediary electronic conversion. Specifically, these systems exhibit strong spin-orbit torque effects, fast domain wall motion and single-pulse all-optical switching of the magnetiza…
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Synthetic ferrimagnets based on Co and Gd bear promise for directly bridging the gap between volatile information in the photonic domain and non-volatile information in the magnetic domain, without the need for any intermediary electronic conversion. Specifically, these systems exhibit strong spin-orbit torque effects, fast domain wall motion and single-pulse all-optical switching of the magnetization. An important open challenge to bring these materials to the brink of applications is to achieve long-term stability of their magnetic properties. In this work, we address the time-evolution of the magnetic moment and compensation temperature of magnetron sputter grown Pt/Co/Gd trilayers with various cap** layers. Over the course of three months, the net magnetic moment and compensation temperature change significantly, which we attribute to quenching of the Gd magnetization. We identify that intermixing of the cap** layer and Gd is primarily responsible for this effect, which can be alleviated by choosing nitrides for cap** as long as reduction of nitride to oxide is properly addressed. In short, this work provides an overview of the relevant aging effects that should be taken into account when designing synthetic ferrimagnets based on Co and Gd for spintronic applications.
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Submitted 30 May, 2023;
originally announced May 2023.
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Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current
Authors:
Shen Li,
Xiaoyang Lin,
**zhi Li,
Suteng Zhao,
Zhizhong Si,
Guodong Wei,
Bert Koopmans,
Reinoud Lavrijsen,
Weisheng Zhao
Abstract:
Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult…
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Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of DM interaction which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated to the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM through micromagnetic simulations. Under the CS mechanism, a fast (102 m/s), ultralow energy (5 attojoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetrack, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS only causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.
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Submitted 8 May, 2023;
originally announced May 2023.
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Controlling magnetic skyrmion nucleation with Ga+ ion irradiation
Authors:
Mark C. H. de Jong,
Bennert H. M. Smit,
Mariëlle J. Meijer,
Juriaan Lucassen,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
In this paper, we show that magnetic skyrmion nucleation can be controlled using Ga+ ion irradiation, which manipulates the magnetic interface effects (in particular the magnetic anisotropy and Dzyaloshinskii-Moriya interaction) that govern the stability and energy cost of skyrmions in thin film systems. We systematically and quantitatively investigated what effect these changes have on the nuclea…
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In this paper, we show that magnetic skyrmion nucleation can be controlled using Ga+ ion irradiation, which manipulates the magnetic interface effects (in particular the magnetic anisotropy and Dzyaloshinskii-Moriya interaction) that govern the stability and energy cost of skyrmions in thin film systems. We systematically and quantitatively investigated what effect these changes have on the nucleation of magnetic skyrmions. Our results indicate that the energy cost of skyrmion nucleation can be reduced up to 26% in the studied dose range and that it scales approximately linearly with the square root of the domain-wall energy density. Moreover, the total number of nucleated skyrmions in irradiated devices after nucleation was found to depend linearly on the ion dose and could be doubled compared to nonirradiated devices. These results show that ion irradiation cannot only be used to enable local nucleation of skyrmions, but that it also allows for fine control of the threshold and efficiency of the nucleation process.
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Submitted 28 March, 2023; v1 submitted 27 March, 2023;
originally announced March 2023.
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Strain effects on magnetic compensation and spin reorientation transition of Co/Gd synthetic ferrimagnets
Authors:
Giovanni Masciocchi,
Thomas J. Kools,
**zhi Li,
Adrien A. D. Petrillo,
Bert Koopmans,
Reinoud Lavrijsen,
Andreas Kehlberger,
Mathias Kläui
Abstract:
Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic…
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Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, the spin reorientation transition of a bilayer system is investigated in wedge type samples, where we report an increase in the perpendicular magnetic anisotropy in the presence of in-plane strain. Using a model for magnetostatics and spin reorientation transition in this type of system, we confirm that the observed changes in anisotropy field are mainly due to the Co magnetoelastic anisotropy. Secondly, the magnetization compensation of a quadlayer is studied. We find that magnetization compensation of this synthetic ferrimagnetic system is not altered by external strain. This confirms the resilience of this material system against strain that may be induced during the integration process, making Co/Gd ferrimagnets suitable candidates for spintronics applications.
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Submitted 31 March, 2023; v1 submitted 27 March, 2023;
originally announced March 2023.
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Strongly nonlinear antiferromagnetic dynamics in high magnetic fields
Authors:
Pavel Stremoukhov,
Ansar Safin,
Casper F. Schippers,
Reinoud Lavrijsen,
Maurice Bal,
Uli Zeitler,
Alexandr Sadovnikov,
Kamyar Saeedi Ilkhchy,
Sergey Nikitov,
Andrei Kirilyuk
Abstract:
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties, however, make their manipulation difficult, requiring frequencies in THz range and magnetic fields of tens of Teslas. Switching of AFM order implies going into the…
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Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties, however, make their manipulation difficult, requiring frequencies in THz range and magnetic fields of tens of Teslas. Switching of AFM order implies going into the nonlinear regime, a largely unexplored territory. Here we use THz light from a free electron laser to drive antiferromagnetic NiO into a highly nonlinear regime and steer it out of nonlinearity with magnetic field from a 33-Tesla Bitter magnet. This demonstration of large-amplitude dynamics represents a crucial step towards ultrafast resonant switching of AFM order.
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Submitted 1 November, 2022;
originally announced November 2022.
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Optical spin-wave detection beyond the diffraction limit
Authors:
J. Lucassen,
M. J. G. Peeters,
C. F. Schippers,
R. A. Duine,
H. J. M. Swagten,
B. Koopmans,
R. Lavrijsen
Abstract:
Spin waves are proposed as information carriers for next-generation computing devices because of their low power consumption. Moreover, their wave-like nature allows for novel computing paradigms. Conventional methods to detect spin waves are based either on electrical induction, limiting the downscaling and efficiency complicating eventual implementation, or on light scattering, where the minimum…
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Spin waves are proposed as information carriers for next-generation computing devices because of their low power consumption. Moreover, their wave-like nature allows for novel computing paradigms. Conventional methods to detect spin waves are based either on electrical induction, limiting the downscaling and efficiency complicating eventual implementation, or on light scattering, where the minimum detectable spin-wave wavelength is set by the wavelength of the laser. In this Article we demonstrate magneto-optical detection of spin waves beyond the diffraction limit using a metallic grating that selectively absorbs laser light. Specifically, we demonstrate the detection of propagating spin waves with a wavelength of 700 nm using a diffraction-limited laser spot with a size of 10 $μ$m in 20 nm thick Py strips. Additionally, we show that this grating is selective to the wavelength of the spin wave, providing wavevector-selective spin-wave detection. This should open up new avenues towards the integration of the burgeoning fields of photonics and magnonics, and aid in the optical detection of spin waves in the short-wavelength exchange regime for fundamental research.
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Submitted 21 October, 2022;
originally announced October 2022.
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Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory
Authors:
Hamed Pezeshki,
**zhi Li,
Reinoud Lavrijsen,
Martijn Heck,
Erwin Bente,
Jos van der Tol,
Bert Koopmans
Abstract:
We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nano…
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We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nanoantenna coupled with a photonic crystal cavity can enable switching and reading of the magnetization state in nanoscale magnetic bits by enhancing the absorbed energy density and polar magneto-optical Kerr effect (PMOKE) locally beyond the diffraction limit. Using a three-dimensional finite-difference time-domain method, we numerically show that our device can switch and read the magnetization state in targeted bits down to ~100 nm in the presence of oppositely magnetized background regions in the racetrack with widths of 30 to 120 nm, clearly outperforming a bare photonic waveguide. Our hybrid device tackles the challenges of nonlinear absorption in the waveguide, weak PMOKE, and size mismatch between spintronics and integrated photonics. Thus, it provides missing link between the integrated photonics and nanoscale spintronics, expediting the development of ultrafast and energy efficient advanced on-chip applications.
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Submitted 30 September, 2022;
originally announced September 2022.
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Unidirectional magnetic coupling
Authors:
H. Y. Yuan,
R. Lavrijsen,
R. A. Duine
Abstract:
We show that interlayer Dzyaloshinskii-Moriya interaction in combination with non-local Gilbert dam** gives rise to unidirectional magnetic coupling. That is, the coupling between two magnetic layers -- say the left and right layer -- is such that dynamics of the left layer leads to dynamics of the right layer, but not vice versa. We discuss the implications of this result for the magnetic susce…
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We show that interlayer Dzyaloshinskii-Moriya interaction in combination with non-local Gilbert dam** gives rise to unidirectional magnetic coupling. That is, the coupling between two magnetic layers -- say the left and right layer -- is such that dynamics of the left layer leads to dynamics of the right layer, but not vice versa. We discuss the implications of this result for the magnetic susceptibility of a magnetic bilayer, electrically-actuated spin-current transmission, and unidirectional spin-wave packet generation and propagation. Our results may enable a route towards spin-current and spin-wave diodes and further pave the way to design spintronic devices via reservoir engineering.
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Submitted 28 September, 2022;
originally announced September 2022.
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Magnetostatics of Room Temperature Compensated Co/Gd/Co/Gd-based Synthetic Ferrimagnets
Authors:
Thomas J. Kools,
Marnix C. van Gurp,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Flexibility for interface engineering, and access to all-optical switching of the magnetization, make synthetic ferrimagnets an interesting candidate for advanced opto-spintronic devices. Moreover, due to their layered structure and disordered interfaces they also bear promise for the emerging field of graded magnetic materials. The fastest and most efficient spin-orbit torque driven manipulation…
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Flexibility for interface engineering, and access to all-optical switching of the magnetization, make synthetic ferrimagnets an interesting candidate for advanced opto-spintronic devices. Moreover, due to their layered structure and disordered interfaces they also bear promise for the emerging field of graded magnetic materials. The fastest and most efficient spin-orbit torque driven manipulation of the magnetic order in this material system generally takes place at compensation. Here, we present a systematic experimental and modeling study of the conditions for magnetization compensation and perpendicular magnetic anisotropy in the synthetic ferrimagnetic Co/Gd/Co/Gd system. A model based on partial intermixing at the Co/Gd interfaces of this system has been developed which explains the experiments well, and provides a new tool to understand its magnetic characteristics. More specifically, this work provides new insight in the decay of the Co proximity-induced magnetization in the Gd, and the role the cap** layer plays in the Gd magnetization.
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Submitted 23 September, 2022;
originally announced September 2022.
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Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform
Authors:
Hamed Pezeshki,
**zhi Li,
Reinoud Lavrijsen,
Jos J. G. M. van der Tol,
Bert Koopmans
Abstract:
In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide…
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In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide waveguide. By taking advantage of the localized surface plasmons, our hybrid device can enable detection of the magnetization state in magnetic bits beyond the diffraction limit of light and enhance the polar magneto-optical Kerr effect (PMOKE). We further illustrate how combining the hybrid device with a plasmonic polarization rotator provides magneto-optical read-out by transforming the PMOKE-induced polarization change into an intensity variation of the waveguide mode. According to the simulation results based on a three-dimensional finite-difference time-domain method, the hybrid device can detect the magnetization states in targeted bits in a magnetic racetrack medium down to ~ 100x100 nm2, regardless of the magnetization state of the rest of the racetrack with a relative intensity contrast of greater than 0.5% for a ~ 200x100 nm2 magnetic bit. We believe our hybrid device can be an enabling technology that can connect integrated photonics with nanoscale spintronics, paving the way toward ultrafast and energy efficient advanced on-chip applications.
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Submitted 4 August, 2022;
originally announced August 2022.
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Enhancing All-Optical Switching of Magnetization by He Ion Irradiation
Authors:
**zhi Li,
Johannes W. van der Jagt,
Maarten Beens,
Julian Hintermayr,
Marcel Verheijen,
René Bruikman,
Beatriz Barcones,
Roméo Juge,
Reinoud Lavrijsen,
Dafiné Ravelosona,
Bert Koopmans
Abstract:
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion…
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All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.
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Submitted 15 July, 2022;
originally announced July 2022.
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Substrate conformal imprint fabrication process of synthetic antiferromagnetic nanoplatelets
Authors:
J. Li,
P. van Nieuwkerk,
M. A. Verschuuren,
B. Koopmans,
R. Lavrijsen
Abstract:
Methods to fabricate and characterize monodisperse magnetic nanoplatelets for fluid/bio-based applications based on spintronic thin-film principles are a challenge. This is due to the required top-down approach where the transfer of optimized blanket films to free particles in a fluid while preserving the magnetic properties is an uncharted field. Here, we explore the use of substrate conformal im…
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Methods to fabricate and characterize monodisperse magnetic nanoplatelets for fluid/bio-based applications based on spintronic thin-film principles are a challenge. This is due to the required top-down approach where the transfer of optimized blanket films to free particles in a fluid while preserving the magnetic properties is an uncharted field. Here, we explore the use of substrate conformal imprint lithography (SCIL) as a fast and cost-effective fabrication route. We analyze the size distribution of nominal 1.8 um and 120 nm diameter platelets and show the effect of the fabrication steps on the magnetic properties which we explain through changes in the dominant magnetization reversal mechanism as the size decreases. We show that SCIL allows for efficient large-scale platelet fabrication and discuss how application-specific requirements can be solved via process and material engineering.
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Submitted 30 June, 2022;
originally announced June 2022.
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Probing Laser-Induced Spin-Current Generation in Synthetic Ferrimagnets Using Spin Waves
Authors:
Tom Lichtenberg,
Youri L. W. van Hees,
Maarten Beens,
Caspar J. Levels,
Reinoud Lavrijsen,
Rembert A. Duine,
Bert Koopmans
Abstract:
Several rare-earth transition-metal ferrimagnetic systems exhibit all-optical magnetization switching upon excitation with a femtosecond laser pulse. Although this phenomenon is very promising for future opto-magnetic data storage applications, the role of non-local spin transport in these systems is scarcely understood. Using Co/Gd and Co/Tb bilayers we isolate the contribution of the rare-earth…
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Several rare-earth transition-metal ferrimagnetic systems exhibit all-optical magnetization switching upon excitation with a femtosecond laser pulse. Although this phenomenon is very promising for future opto-magnetic data storage applications, the role of non-local spin transport in these systems is scarcely understood. Using Co/Gd and Co/Tb bilayers we isolate the contribution of the rare-earth materials to the generated spin currents by using the precessional dynamics they excite in an adjacent ferromagnetic layer as a probe. By measuring THz standing spin-waves as well as GHz homogeneous precessional modes, we probe both the high- and low-frequency components of these spin currents. The low-frequency homogeneous mode indicates a significant contribution of Gd to the spin current, but not from Tb, consistent with the difficulty in achieving all-optical switching in Tb-containing systems. Measurements on the THz frequency spin waves reveal the inability of the rare-earth generated spin currents to excite dynamics at the sub-ps timescale. We present modelling efforts using the $s$-$d$ model, which effectively reproduce our results and allow us to explain the behavior in terms of the temporal profile of the spin current.
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Submitted 22 June, 2022;
originally announced June 2022.
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Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction
Authors:
Zilu Wang,
**zhi Li,
Yuxuan Yao,
Youri L. W. Van Hees,
Casper F. Schippers,
Reinoud Lavrijsen,
Albert Fert,
Weisheng Zhao,
Bert Koopmans
Abstract:
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the fiel…
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Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.
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Submitted 10 May, 2022;
originally announced May 2022.
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Ultrafast racetrack based on compensated Co/Gd-based synthetic ferrimagnet with all-optical switching
Authors:
**zhi Li,
Thomas J. Kools,
Reinoud Lavrijsen,
Bert Koopmans
Abstract:
Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory and logic platforms. Fast current-induced domain wall motion (CIDWM) and single shot AOS have been individually demonstrated in different ferrimagnetic alloys.…
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Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory and logic platforms. Fast current-induced domain wall motion (CIDWM) and single shot AOS have been individually demonstrated in different ferrimagnetic alloys. However, the stringent requirement for their composition control makes these alloys challenging materials for wafer-scale production. Here, we simultaneously demonstrate fast CIDWM and energy efficient AOS in a synthetic ferrimagnetic system based on multilayered [Co/Gd/Co/Gd]. We firstly show that AOS is present in its full composition range. We find that current-driven domain wall velocities over 2000 m/s at room temperature, achieved by compensating the total angular momentum through layer thickness tuning. Furthermore, analytical modeling of the CIDWM reveals that Joule heating needs to be treated transiently to properly describe the CIDWM for our sub-ns current pulses. Our studies establish [Co/Gd]-based synthetic ferrimagnets to be a unique materials platform for domain wall devices with access to ultrafast single pulse AOS.
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Submitted 25 April, 2022;
originally announced April 2022.
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Towards high all-optical data writing rates in synthetic ferrimagnets
Authors:
Youri L. W. van Hees,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a GdCo alloy, a second laser pulse arriving 7 ps later can consistently switch the magnetization. However, it is as of yet unknown whether the same holds in layered…
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Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a GdCo alloy, a second laser pulse arriving 7 ps later can consistently switch the magnetization. However, it is as of yet unknown whether the same holds in layered ferrimagnetic systems, which hold much promise for applications. In this work we investigate the minimum time delay required between two subsequent switching events in synthetic ferrimagnetic Co/Gd bilayers using two fs laser pulses. We experimentally demonstrate that the minimum time delay needed for consistent switching can be as low as 10 ps. Moreover, we demonstrate the importance of engineering heat diffusion away from the magnetic material, as well as control over the laser pulse power. This behavior is reproduced using modelling, where we find that the second switch can occur even when the magnetization is not fully recovered. We further confirm that heat diffusion is a critical factor in reducing the time delay for the second switch, while also confirming a critical dependence on laser power.
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Submitted 4 April, 2022;
originally announced April 2022.
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Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet
Authors:
**zhi Li,
Mark J. G. Peeters,
Youri L. W. van Hees,
Reinoud Lavrijsen,
Bert Koopmans
Abstract:
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we…
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A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energy oscillates with the dielectric layer thickness following the light interference profile as obtained from theoretical calculations. Furthermore, the switching threshold fluence can be reduced by at least $80\%$ to 0.6 mJ/cm$^2$ using two dielectric SiO$_2$ layers sandwiching the metal stack, which scales to 15 fJ of incident energy for a cell size of $50^2$ nm$^2$.
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Submitted 22 October, 2021;
originally announced October 2021.
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Local control of magnetic interface effects in chiral Ir$|$Co$|$Pt multilayers using Ga$^{+}$ ion irradiation
Authors:
Mark C. H. de Jong,
Mariëlle J. Meijer,
Juriaan Lucassen,
Jos van Liempt,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Skyrmions are topologically protected chiral spin textures that have shown promise as data carriers in future spintronic applications. They can be stabilized by the interfacial Dzyaloshinskii-Moriya interaction (iDMI) in material systems with inversion asymmetry and spin-orbit coupling, such as Ir$|$Co$|$Pt multilayers. The ability to locally tune such interface interactions, and hence the skyrmio…
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Skyrmions are topologically protected chiral spin textures that have shown promise as data carriers in future spintronic applications. They can be stabilized by the interfacial Dzyaloshinskii-Moriya interaction (iDMI) in material systems with inversion asymmetry and spin-orbit coupling, such as Ir$|$Co$|$Pt multilayers. The ability to locally tune such interface interactions, and hence the skyrmion energy, could greatly enhance the nucleation and control of skyrmions in racetrack type devices. In this work, we investigate local tuning of the iDMI and perpendicular magnetic anisotropy (PMA) using focussed Ga$^{+}$ ion beam irradiation, in an Ir$|$Co$|$Pt multilayer system. We show that the magnitude of the interface contribution to both effects can be significantly reduced by the irradiation with Ga$^{+}$ ions. This leads to a reduction by a factor two of the domain wall energy density, while still preserving the Néel character of the domain walls. Hence, we postulate that Ga$^{+}$ ion irradiation is an effective way to locally reduce the energy barrier for skyrmion nucleation, providing a novel pathway for targeted skyrmion nucleation in racetrack type devices.
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Submitted 4 October, 2021;
originally announced October 2021.
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Picosecond Switching of Optomagnetic Tunnel Junctions
Authors:
Luding Wang,
Houyi Cheng,
**zhi Li,
Yang Liu,
Youri L. W. van Hees,
Reinoud Lavrijsen,
Xiaoyang Lin,
Kaihua Cao,
Bert Koopmans,
Weisheng Zhao
Abstract:
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque or spin orbit torque with spin…
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Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optomagnetic tunnel junction using a spintronic-photonic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optomagnetic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast spintronic memories with THz data access, as well as ultralow power consumption.
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Submitted 6 November, 2020;
originally announced November 2020.
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Chiral Spin Spirals at the Surface of the van der Waals Ferromagnet Fe$_3$GeTe$_2$
Authors:
Mariëlle J. Meijer,
Juriaan Lucassen,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen,
Marcos H. D. Guimarães
Abstract:
Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferr…
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Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT), at zero magnetic field. These Néel spin spirals survive up to FGT's Curie temperature $T_\mathrm{C}= 220 \mathrm{~K}$, with little change in the periodicity $p=300 \mathrm{~nm}$ of the spin spiral throughout the studied temperature range. The formation of a spin spiral showing counterclockwise rotation strongly suggests the presence of a positive Dzyaloshinskii-Moriya interaction in FGT, which provides the first steps towards the understanding of the magnetic structure of FGT. Our results additionally pave the way for chiral magnetism in van der Waals materials and their heterostructures.
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Submitted 28 July, 2020;
originally announced July 2020.
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All-optical switching of magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya Interaction
Authors:
Anni Cao,
Youri L. W. van Hees,
Reinoud Lavrijsen,
Weisheng Zhao,
Bert Koopmans
Abstract:
Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubbl…
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Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubble expansion in specially engineered Co/Gd-based multilayer structures. In the absence of any external magnetic fields, we look into the AOS properties and the potential role of the DMI on the AOS process as well as the stability of optically written micro-magnetic domains. Particularly, interesting dynamics are observed in moon-shaped structures written by two successive laser pulses. The stability of domains resulting from an interplay of the dipolar interaction and domain-wall energy are compared to simple analytical models and micromagnetic simulations.
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Submitted 25 May, 2020; v1 submitted 16 May, 2020;
originally announced May 2020.
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Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers
Authors:
Luding Wang,
Youri L. W. van Hees,
Reinoud Lavrijsen,
Weisheng Zhao,
Bert Koopmans
Abstract:
All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio.…
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All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio. However, with integrating AOS with an MTJ in prospect, the annealing effects on single-pulse AOS and domain wall (DW) dynamics in the Pt/Co/Gd stacks haven't been systematically investigated yet. In this study, we experimentally explore the annealing effect on AOS and field-induced DW motion in Pt/Co/Gd stacks. The results show that the threshold fluence (F_0) for AOS is reduced significantly as a function of annealing temperature (T_a) ranging from 100C to 300C. Specifically, a 28% reduction of F_0 can be observed upon annealing at 300C, which is a critical T_a for MTJ fabrication. Lastly, we also demonstrate a significant increase of the DW velocity in the creep regime upon annealing, which is attributed to annealing-induced Co/Gd interface intermixing. Our findings show that annealed Pt/Co/Gd system facilitates ultrafast and energy-efficient AOS, as well as enhanced DW velocity, which is highly suitable towards opto-spintronic memory applications.
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Submitted 8 May, 2020;
originally announced May 2020.
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Stabilizing chiral spin-structures via an alternating Dzyaloshinskii-Moriya interaction
Authors:
Juriaan Lucassen,
Mariëlle J. Meijer,
Mark C. H. de Jong,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
The stabilization of chiral magnetic spin-structures in thin films is often attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI). Very recently, however, it has been reported that the chirality induced by the DMI can be affected by dipolar interactions. These dipolar fields tend to form Néel caps, which entails the formation of a clockwise chirality at the top of the film and a co…
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The stabilization of chiral magnetic spin-structures in thin films is often attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI). Very recently, however, it has been reported that the chirality induced by the DMI can be affected by dipolar interactions. These dipolar fields tend to form Néel caps, which entails the formation of a clockwise chirality at the top of the film and a counterclockwise chirality at the bottom. Here, we show that engineering an alternating DMI that changes sign across the film thickness, together with the tendency to form Néel caps, leads to an enhanced stability of chiral spin-structures. Micromagnetic simulations for skyrmions demonstrate that this can increase the effective DMI in a prototypical [Pt/Co/Ir] multilayer system by at least \SI{0.6}{mJ.m^{-2}}. These gains are comparable to what has been achieved using additive DMI, but more flexible as we are not limited to a select set of material combinations. We also present experimental results: by measuring equilibrium domain widths we quantify the effective DMI in [Pt/Co/Ir] multilayer systems typically used for skyrmion stabilization. Upon introducing an alternating DMI we demonstrate changes in the effective DMI that agree with our simulations. Our results provide a route towards enhancing the stability of chiral spin-structures that does not rely on enlarging the chiral interactions.
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Submitted 1 April, 2020;
originally announced April 2020.
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Deterministic all-optical magnetization writing facilitated by non-local transfer of spin angular momentum
Authors:
Youri L. W. van Hees,
Paul van de Meugheuvel,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Ever since the discovery of all-optical magnetization switching (AOS) around a decade ago, this phenomenon of manipulating magnetization using only femtosecond laser pulses has promised a large potential for future data storage and logic devices. Two distinct mechanisms have been observed, where the final magnetization state is either defined by the helicity of many incoming laser pulses, or toggl…
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Ever since the discovery of all-optical magnetization switching (AOS) around a decade ago, this phenomenon of manipulating magnetization using only femtosecond laser pulses has promised a large potential for future data storage and logic devices. Two distinct mechanisms have been observed, where the final magnetization state is either defined by the helicity of many incoming laser pulses, or toggled by a single pulse. What has thus far been elusive, yet essential for applications, is the deterministic writing of a specific magnetization state with a single laser pulse. In this work we experimentally demonstrate such a mechanism by making use of a spin polarized current which is optically generated in a ferromagnetic reference layer, assisting or hindering switching in an adjacent Co/Gd bilayer. We show deterministic writing of an 'up' and 'down' state using a sequence of 1 or 2 pulses, respectively. Moreover, we demonstrate the non-local origin of the effect by varying the magnitude of the generated spin current. Our demonstration of deterministic magnetization writing could provide an essential step towards the implementation of future optically addressable spintronic memory devices.
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Submitted 24 January, 2020;
originally announced January 2020.
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Magnetic chirality controlled by the interlayer exchange interaction
Authors:
Mariëlle J. Meijer,
Juriaan Lucassen,
Fabian Kloodt-Twesten,
Robert Frömter,
Oleg Kurnosikov,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Chiral magnetism, wherein there is a preferred sense of rotation of the magnetization, has become a key aspect for future spintronic applications. It determines the chiral nature of magnetic textures, such as skyrmions, domain walls or spin spirals, and a specific magnetic chirality is often required for spintronic applications. Current research focuses on identifying and controlling the interacti…
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Chiral magnetism, wherein there is a preferred sense of rotation of the magnetization, has become a key aspect for future spintronic applications. It determines the chiral nature of magnetic textures, such as skyrmions, domain walls or spin spirals, and a specific magnetic chirality is often required for spintronic applications. Current research focuses on identifying and controlling the interactions that define the magnetic chirality. The influence of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) and, recently, the dipolar interactions have previously been reported. Here, we experimentally demonstrate that an indirect interlayer exchange interaction can be used as an additional tool to effectively manipulate the magnetic chirality. We image the chirality of magnetic domain walls in a coupled bilayer system using scanning electron microscopy with polarization analysis (SEMPA). Upon increasing the interlayer exchange coupling, we induce a transition of the magnetic chirality from clockwise rotating Néel walls to degenerate Bloch-Néel domain walls and we confirm our findings with micromagnetic simulations. In multi-layered systems relevant for skyrmion research a uniform magnetic chirality across the magnetic layers is often desired. Additional simulations show that this can be achieved for reduced iDMI values when exploiting the interlayer exchange interaction. This work opens up new ways to control and tailor the magnetic chirality by the interlayer exchange interaction.
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Submitted 14 October, 2019; v1 submitted 19 September, 2019;
originally announced September 2019.
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Extraction of Dzyaloshinksii-Moriya interaction from propagating spin waves validated
Authors:
Juriaan Lucassen,
Casper F. Schippers,
Marcel A. Verheijen,
Patrizia Fritsch,
Erik Jan Geluk,
Beatriz Barcones,
Rembert A. Duine,
Sabine Wurmehl,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
The interfacial Dzyaloshinksii-Moriya interaction (iDMI) is of great interest in thin-film magnetism because of its ability to stabilize chiral spin textures. It can be quantified by investigating the frequency non-reciprocity of oppositely propagating spin waves. However, as the iDMI is an interface interaction the relative effect reduces when the films become thicker making quantification more d…
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The interfacial Dzyaloshinksii-Moriya interaction (iDMI) is of great interest in thin-film magnetism because of its ability to stabilize chiral spin textures. It can be quantified by investigating the frequency non-reciprocity of oppositely propagating spin waves. However, as the iDMI is an interface interaction the relative effect reduces when the films become thicker making quantification more difficult. Here, we utilize all-electrical Propagating Spin Wave Spectroscopy (PSWS) to disentangle multiple contributions to spin wave frequency non-reciprocity to determine the iDMI. This is done by investigating non-reciprocities across a wide range of magnetic layer thicknesses (from 4 to 26 nm) in Pt/Co/Ir, Pt/Co/Pt, and Ir/Co/Pt stacks. We find the expected sign change in the iDMI when inverting the stack order, and a negligible iDMI for the symmetric Pt/Co/Pt. We additionally extract a difference in surface anisotropies and find a large contribution due to the formation of different crystalline phases of the Co, which is corroborated using nuclear magnetic resonance and high-resolution transmission-electron-microscopy measurements. These insights will open up new avenues to investigate, quantify and disentangle the fundamental mechanisms governing the iDMI, and pave a way towards engineered large spin-wave non-reciprocities for magnonic applications.
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Submitted 5 September, 2019;
originally announced September 2019.
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Tuning magnetic chirality by dipolar interactions
Authors:
Juriaan Lucassen,
Mariëlle J. Meijer,
Fabian Kloodt-Twesten,
Robert Frömter,
Oleg Kurnosikov,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Chiral magnetism has gained enormous interest in recent years because of the anticipated wealth of applications in nanoelectronics. The demonstrated stabilization of chiral magnetic domain walls and skyrmions has been attributed to the actively investigated Dzyaloshinskii-Moriya interaction. Recently, however, predictions were made that suggest dipolar interactions can also stabilize chiral domain…
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Chiral magnetism has gained enormous interest in recent years because of the anticipated wealth of applications in nanoelectronics. The demonstrated stabilization of chiral magnetic domain walls and skyrmions has been attributed to the actively investigated Dzyaloshinskii-Moriya interaction. Recently, however, predictions were made that suggest dipolar interactions can also stabilize chiral domain walls and skyrmions, but direct experimental evidence has been lacking. Here we show that dipolar interactions can indeed stabilize chiral domain walls by directly imaging the magnetic domain walls using scanning electron microscopy with polarization analysis. We further show that the competition between the Dzyaloshinskii-Moriya and dipolar interactions can reverse the domain-wall chirality. Finally, we suggest that this competition can be tailored by a Ruderman-Kittel-Kasuya-Yosida interaction. Our work therefore reveals that dipolar interactions play a key role in the stabilization of chiral spin textures. This insight will open up new routes towards balancing interactions for the stabilization of chiral magnetism.
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Submitted 3 April, 2019;
originally announced April 2019.
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Investigating optically-excited THz standing spin waves using noncollinear magnetic bilayers
Authors:
Mark L. M. Lalieu,
Reinoud Lavrijsen,
Rembert A. Duine,
Bert Koopmans
Abstract:
We investigate optically excited THz standing spin waves in noncollinear magnetic bilayers. Using femtosecond laser-pulse excitation, a spin current is generated in the first ferromagnetic (FM) layer, and flows through a conductive spacer layer to be injected into the second (transverse) FM layer, where it exerts a spin-transfer torque on the magnetization and excites higher-order standing spin wa…
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We investigate optically excited THz standing spin waves in noncollinear magnetic bilayers. Using femtosecond laser-pulse excitation, a spin current is generated in the first ferromagnetic (FM) layer, and flows through a conductive spacer layer to be injected into the second (transverse) FM layer, where it exerts a spin-transfer torque on the magnetization and excites higher-order standing spin waves. We show that the noncollinear magnetic bilayer is a convenient tool that allows easy excitation of THz spin waves, and can be used to investigate the dispersion and thereby the spin wave stiffness parameter in the thin-film regime. This is experimentally demonstrated using wedge-shaped Co and CoB (absorption) layers. Furthermore, the dam** of these THz spin waves is investigated, showing a strong increase of the dam** with decreasing absorption layer thickness, much stronger than expected from interface spin pum** effects. Additionally, a previously unseen sudden decrease in the dam** for the thinnest films is observed. A model for the additional dam** contribution incorporating both these observations is proposed.
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Submitted 7 March, 2019;
originally announced March 2019.
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Optimizing propagating spin wave spectroscopy
Authors:
Juriaan Lucassen,
Casper F. Schippers,
Luuk Rutten,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
The frequency difference between two oppositely propagating spin waves can be used to probe several interesting magnetic properties, such as the Dzyaloshinkii-Moriya interaction (DMI). Propagating spin wave spectroscopy is a technique that is very sensitive to this frequency difference. Here we show several elements that are important to optimize devices for such a measurement. We demonstrate that…
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The frequency difference between two oppositely propagating spin waves can be used to probe several interesting magnetic properties, such as the Dzyaloshinkii-Moriya interaction (DMI). Propagating spin wave spectroscopy is a technique that is very sensitive to this frequency difference. Here we show several elements that are important to optimize devices for such a measurement. We demonstrate that for wide magnetic strips there is a need for de-embedding. Additionally, for these wide strips there is a large parasitic antenna-antenna coupling that obfuscates any spin wave transmission signal, which is remedied by moving to smaller strips. The conventional antenna design excites spin waves with two different wave vectors. As the magnetic layers become thinner, the resulting resonances move closer together and become very difficult to disentangle. In the last part we therefore propose and verify a new antenna design that excites spin waves with only one wave vector. We suggest to use this antenna design to measure the DMI in thin magnetic layers.
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Submitted 30 January, 2019;
originally announced January 2019.
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Creep of Chiral Domain Walls
Authors:
Dion M. F. Hartmann,
Rembert A. Duine,
Mariëlle J. Meijer,
Henk J. M. Swagten,
Reinoud Lavrijsen
Abstract:
Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane magnetic field. This is understood as a consequence of the inversion asymmetry of the system, yielding a finite chiral Dzyaloshinskii-Moriya interaction. Numerous atte…
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Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane magnetic field. This is understood as a consequence of the inversion asymmetry of the system, yielding a finite chiral Dzyaloshinskii-Moriya interaction. Numerous attempts have been made to explain these observations using creep theory, but, in doing so, these have not included all contributions to the domain wall energy or have introduced additional free parameters. In this article we present a theory for creep motion of chiral domain walls in the creep regime that includes the most important contributions to the domain-wall energy and does not introduce new free parameters beyond the usual parameters that are included in the micromagnetic energy. Furthermore, we present experimental measurements of domain wall velocities as a function of in-plane field that are well decribed by our model, and from which material properties such as the strength of the Dzyaloshinskii-Moriya interaction and the demagnetization field are extracted.
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Submitted 21 December, 2018;
originally announced December 2018.
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Structural transitions of skyrmion lattices in synthetic antiferromagnets
Authors:
Etienne van Walsem,
Rembert A. Duine,
Juriaan Lucassen,
Reinoud Lavrijsen,
Henk J. M. Swagten
Abstract:
Thin magnetic films with Dzyaloshinskii-Moriya interactions are known to host skyrmion crystals, which typically have a hexagonal lattice structure. We investigate skyrmion-lattice configurations in synthetic antiferromagnets, i.e., a bilayer of thin magnetic films that is coupled antiferromagnetically. By means of Monte-Carlo simulations, we find that by tuning the interlayer coupling the skyrmio…
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Thin magnetic films with Dzyaloshinskii-Moriya interactions are known to host skyrmion crystals, which typically have a hexagonal lattice structure. We investigate skyrmion-lattice configurations in synthetic antiferromagnets, i.e., a bilayer of thin magnetic films that is coupled antiferromagnetically. By means of Monte-Carlo simulations, we find that by tuning the interlayer coupling the skyrmion lattice structure can be tuned from square to hexagonal. We give a simple interpretation for the existence of this transition based on the fact that for synthetic antiferromagnetic coupling the skyrmions in different layers repel each other and form each others' dual lattice. Our findings may be useful to experimentally switch between two lattice configurations to, for example, modify spin-wave propagation.
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Submitted 16 January, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Integrating all-optical switching with spintronics
Authors:
Mark L. M. Lalieu,
Reinoud Lavrijsen,
Bert Koopmans
Abstract:
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to its high potential for fast and energy-efficient data writing in future spintronic memory applications. Unfortunately, the AOS mechanism in the ferromagnetic m…
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All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to its high potential for fast and energy-efficient data writing in future spintronic memory applications. Unfortunately, the AOS mechanism in the ferromagnetic multilayers commonly used in spintronics needs multiple pulses for the magnetization reversal, losing its speed and energy efficiency. Here, we experimentally demonstrate `on-the-fly' single-pulse AOS in combination with spin Hall effect (SHE) driven motion of magnetic domains in Pt/Co/Gd synthetic-ferrimagnetic racetracks. Moreover, using field-driven-SHE-assisted domain wall (DW) motion measurements, both the SHE efficiency in the racetrack is determined and the chirality of the optically written DW's is verified. Our experiments demonstrate that Pt/Co/Gd racetracks facilitate both single-pulse AOS as well as efficient SHE induced domain wall motion, which might ultimately pave the way towards integrated photonic memory devices.
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Submitted 7 September, 2018;
originally announced September 2018.
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Anomalous direction for skyrmion bubble motion
Authors:
Fanny C. Ummelen,
Tijs A. Wijkamp,
Tom Lichtenberg,
Rembert A. Duine,
Bert Koopmans,
Henk J. M. Swagten,
Reinoud Lavrijsen
Abstract:
Magnetic skyrmions are localized topological excitations that behave as particles and can be mobile, with great potential for novel data storage devices. In this work, the current-induced dynamics of large skyrmion bubbles is studied. When skyrmion motion in the direction opposite to the electron flow is observed, this is usually interpreted as a perpendicular spin current generated by the spin Ha…
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Magnetic skyrmions are localized topological excitations that behave as particles and can be mobile, with great potential for novel data storage devices. In this work, the current-induced dynamics of large skyrmion bubbles is studied. When skyrmion motion in the direction opposite to the electron flow is observed, this is usually interpreted as a perpendicular spin current generated by the spin Hall effect exerting a torque on the chiral Néel skyrmion. By designing samples in which the direction of the net generated spin current can be carefully controlled, we surprisingly show that skyrmion motion is always against the electron flow, irrespective of the net vertical spin-current direction. We find that a negative bulk spin-transfer torque is the most plausible explanation for the observed results, which is qualitatively justified by a simple model that captures the essential behaviour. These findings demonstrate that claims about the skyrmion chirality based on their current-induced motion should be taken with great caution.
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Submitted 19 July, 2018;
originally announced July 2018.
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Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers
Authors:
Yuxiang Yin,
Dong-Soo Han,
Mark C. H. de Jong,
Reinoud Lavrijsen,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans
Abstract:
A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the USMR, both ferromagnetic and heavy metallic layer thickness dependence of the USMR are presented in a Pt/Co/AlOx trilayer at room temperature. To avoid ambiguit…
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A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the USMR, both ferromagnetic and heavy metallic layer thickness dependence of the USMR are presented in a Pt/Co/AlOx trilayer at room temperature. To avoid ambiguities, second harmonic Hall measurements are used for separating spin-Hall and thermal contributions to the non-linear magnetoresistance. The experimental results are fitted by using a drift-diffusion theory, with parameters extracted from an analysis of longitudinal resistivity of the Co layer within the framework of the Fuchs-Sondheimer model. A good agreement with the theory is found, demonstrating that the USMR is governed by both the spin-Hall effect in the heavy metallic layer and the metallic diffusion process in the ferromagnetic layer.
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Submitted 17 November, 2017;
originally announced November 2017.
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Scanning electron microscopy with polarization analysis for multilayered chiral spin textures
Authors:
Juriaan Lucassen,
Fabian Kloodt-Twesten,
Robert Frömter,
Hans Peter Oepen,
Rembert A. Duine,
Henk J. M. Swagten,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
We show that scanning electron microscopy with polarization analysis (SEMPA) that is sensitive to both in-plane magnetization components can be used to image the out-of-plane magnetized multi-domain state in multilayered chiral spin textures. By depositing a thin layer of Fe on top of the multilayer we image the underlying out-of-plane domain state through the map** of its stray fields in the Fe…
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We show that scanning electron microscopy with polarization analysis (SEMPA) that is sensitive to both in-plane magnetization components can be used to image the out-of-plane magnetized multi-domain state in multilayered chiral spin textures. By depositing a thin layer of Fe on top of the multilayer we image the underlying out-of-plane domain state through the map** of its stray fields in the Fe. We also demonstrate that SEMPA can be used to image the domain wall chirality in these systems after milling away the cap** layer and imaging the topmost magnetic layer directly.
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Submitted 1 August, 2017;
originally announced August 2017.
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Fabrication, detection and operation of a three-dimensional nanomagnetic conduit
Authors:
Dédalo Sanz-Hernández,
Ruben F. Hamans,
Jung-Wei Liao,
Alexander Welbourne,
Reinoud Lavrijsen,
Amalio Fernández-Pacheco
Abstract:
Three-dimensional (3D) nanomagnetic devices such as the vertical racetrack memory have attracted a huge interest due to their potential for memory and logic applications. However, their implementation has not been realised due to great challenges regarding fabrication and characterisation of 3D nanostructures. Here, we show a 3D nanomagnetic system created by 3D nano-printing and physical vapour d…
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Three-dimensional (3D) nanomagnetic devices such as the vertical racetrack memory have attracted a huge interest due to their potential for memory and logic applications. However, their implementation has not been realised due to great challenges regarding fabrication and characterisation of 3D nanostructures. Here, we show a 3D nanomagnetic system created by 3D nano-printing and physical vapour deposition, which acts a conduit for domain walls. Domains formed at the substrate level are injected into a 3D nanowire, where they are controllably trapped using vectorial magnetic fields. A dark-field magneto-optical method for parallel, independent measurement of different regions in individual 3D nanostructures is also demonstrated. This work opens a new route for the advanced study and exploitation of 3D nanomagnetic systems.
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Submitted 12 June, 2017;
originally announced June 2017.
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Chiral magnetoresistance in Pt/Co/Pt zigzag wires
Authors:
Yuxiang Yin,
Dong-Soo Han,
June-Seo Kim,
Reinoud Lavrijsen,
Kyung-** Lee,
Seo-Won Lee,
Kyoung-Whan Kim,
Hyun-Woo Lee,
Henk J. M. Swagten,
Bert Koopmans
Abstract:
The Rashba effect leads to a chiral precession of the spins of moving electrons while the Dzyaloshinskii-Moriya interaction (DMI) generates preference towards a chiral profile of local spins. We predict that the exchange interaction between these two spin systems results in a 'chiral' magnetoresistance depending on the chirality of the local spin texture. We observe this magnetoresistance by measu…
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The Rashba effect leads to a chiral precession of the spins of moving electrons while the Dzyaloshinskii-Moriya interaction (DMI) generates preference towards a chiral profile of local spins. We predict that the exchange interaction between these two spin systems results in a 'chiral' magnetoresistance depending on the chirality of the local spin texture. We observe this magnetoresistance by measuring the domain wall (DW) resistance in a uniquely designed Pt/Co/Pt zigzag wire, and by changing the chirality of the DW with applying an in-plane magnetic field. A chirality-dependent DW resistance is found, and a quantitative analysis shows a good agreement with a theory based on the Rashba model. Moreover, the DW resistance measurement allows us to independently determine the strength of the Rashba effect and the DMI simultaneously, and the result implies a possible correlation between the Rashba effect, the DMI, and the symmetric Heisenberg exchange.
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Submitted 22 March, 2017;
originally announced March 2017.
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Thickness dependence of the interfacial Dzyaloshinskii-Moriya interaction in inversion symmetry broken systems
Authors:
Jaehun Cho,
Nam-Hui Kim,
Sukmock Lee,
June-Seo Kim,
Reinoud Lavrijsen,
Aurelie Solignac,
Yuxiang Yin,
Dong-Soo Han,
Niels J. J. van Hoof,
Henk J. M. Swagten,
Bert Koopmans,
Chun-Yeol You
Abstract:
In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii-Moriya (IDM) interaction. This interfacial nature of IDM interaction has been recently revisited because of its scient…
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In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii-Moriya (IDM) interaction. This interfacial nature of IDM interaction has been recently revisited because of its scientific and technological potential. Here, we demonstrate an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering. The non-reciprocal spin wave dispersions, systematically measured by Brillouin light scattering, allow not only the determination of the IDM energy densities beyond the regime of perpendicular magnetization but also the revelation of the inverse proportionality with the thickness of the magnetic layer, which is a clear signature of the interfacial nature. All together, our experimental and theoretical approaches involving double time Green,s function methods open up possibilities for exploring magnetic hybrid structures for engineering the IDM interaction.
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Submitted 1 June, 2015; v1 submitted 22 May, 2015;
originally announced May 2015.
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Asymmetric magnetic bubble expansion under in-plane field in Pt/Co/Pt: effect of interface engineering
Authors:
Reinoud Lavrijsen,
Dion Hartmann,
Arno van den Brink,
Yuxiang Yin,
Beatriz Barcones,
Rembert Duine,
Marcel Verheijen,
Henk Swagten,
Bert Koopmans
Abstract:
We analyse the impact of growth conditions on asymmetric magnetic bubble expansion under in-plane field in ultrathin Pt / Co / Pt films. Specifically, using sputter deposition we vary the Ar pressure during the growth of the top Pt layer. This induces a large change in the interfacial structure as evidenced by a factor three change in the effective perpendicular magnetic anisotropy. Strikingly, a…
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We analyse the impact of growth conditions on asymmetric magnetic bubble expansion under in-plane field in ultrathin Pt / Co / Pt films. Specifically, using sputter deposition we vary the Ar pressure during the growth of the top Pt layer. This induces a large change in the interfacial structure as evidenced by a factor three change in the effective perpendicular magnetic anisotropy. Strikingly, a discrepancy between the current theory for domain-wall propagation based on a simple domain-wall energy density and our experimental results is found. This calls for further theoretical development of domain-wall creep under in-plane fields and varying structural asymmetry.
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Submitted 31 March, 2015;
originally announced March 2015.
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Domain wall motion governed by the spin Hall effect
Authors:
P. P. J. Haazen,
E. Murè,
J. H. Franken,
R. Lavrijsen,
H. J. M. Swagten,
B. Koopmans
Abstract:
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a novel class of data, memory, and logic devices. In this letter, we propose the spin Hall effect as a radically new mechan…
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Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a novel class of data, memory, and logic devices. In this letter, we propose the spin Hall effect as a radically new mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by small fields along the nanowire. This new manifestation of CIDWM offers a very attractive new degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.
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Submitted 11 September, 2012;
originally announced September 2012.
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Domain-Wall Pinning by Local Control of Anisotropy in Pt/Co/Pt strips
Authors:
Jeroen H. Franken,
Mark Hoeijmakers,
Reinoud Lavrijsen,
Henk J. M. Swagten
Abstract:
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irrad…
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We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions. This tool is used to experimentally study the field-induced switching of nanostrips which are locally irradiated. The boundary of the irradiated area indeed acts as a pinning barrier for the domain wall and the pinning strength increases with the anisotropy difference. Varying the thickness of the Co layer provides an additional way to tune the anisotropy, and it is shown that a thinner Co layer gives a higher starting anisotropy thereby allowing tunable DW pinning in a wider range of fields. Finally, we demonstrate that not only the anisotropy itself, but also the width of the anisotropy barrier can be tuned on the length scale of the domain wall.
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Submitted 16 December, 2011; v1 submitted 6 December, 2011;
originally announced December 2011.
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Spin motive forces due to magnetic vortices and domain walls
Authors:
M. E. Lucassen,
G. C. F. L. Kruis,
R. Lavrijsen,
H. J. M. Swagten,
B. Koopmans,
R. A. Duine
Abstract:
We study spin motive forces, i.e, spin-dependent forces, and voltages induced by time-dependent magnetization textures, for moving magnetic vortices and domain walls. First, we consider the voltage generated by a one-dimensional field-driven domain wall. Next, we perform detailed calculations on field-driven vortex domain walls. We find that the results for the voltage as a function of magnetic fi…
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We study spin motive forces, i.e, spin-dependent forces, and voltages induced by time-dependent magnetization textures, for moving magnetic vortices and domain walls. First, we consider the voltage generated by a one-dimensional field-driven domain wall. Next, we perform detailed calculations on field-driven vortex domain walls. We find that the results for the voltage as a function of magnetic field differ between the one-dimensional and vortex domain wall. For the experimentally relevant case of a vortex domain wall, the dependence of voltage on field around Walker breakdown depends qualitatively on the ratio of the so-called $β$-parameter to the Gilbert dam** constant, and thus provides a way to determine this ratio experimentally. We also consider vortices on a magnetic disk in the presence of an AC magnetic field. In this case, the phase difference between field and voltage on the edge is determined by the $β$ parameter, providing another experimental method to determine this quantity.
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Submitted 8 April, 2011; v1 submitted 30 March, 2011;
originally announced March 2011.
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Correlation between magnetism and spin-dependent transport in CoFeB alloys
Authors:
P. V. Paluskar,
R. Lavrijsen,
M. Sicot,
J. T. Kohlhepp,
H. J. M. Swagten,
B. Koopmans
Abstract:
We report a correlation between the spin polarization of the tunneling electrons (TSP) and the magnetic moment of amorphous CoFeB alloys. Such a correlation is surprising since the TSP involves s-like electrons close to the Fermi level (EF), while the magnetic moment mainly arises due to all d-electrons below EF. We show that probing the s and d-bands individually provides clear and crucial evid…
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We report a correlation between the spin polarization of the tunneling electrons (TSP) and the magnetic moment of amorphous CoFeB alloys. Such a correlation is surprising since the TSP involves s-like electrons close to the Fermi level (EF), while the magnetic moment mainly arises due to all d-electrons below EF. We show that probing the s and d-bands individually provides clear and crucial evidence for such a correlation to exist through s-d hybridization, and demonstrate the tuneability of the electronic and magnetic properties of CoFeB alloys.
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Submitted 3 December, 2008;
originally announced December 2008.