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Diffusion of photo-excited holes in viscous electron fluid
Authors:
Yu. A. Pusep,
M. D. Teodoro,
V. Laurindo Jr.,
E. R. Cardozo de Oliveira,
G. M. Gusev,
A. K. Bakarov
Abstract:
The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of…
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The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of ambipolar diffusion, which reveals characteristics of a viscous flow. Both hole types exhibit similar hydrodynamic characteristics. In such a way the diffusion lengths, ambipolar diffusion coefficient and the effective viscosity of the electron-hole system are determined.
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Submitted 31 March, 2022;
originally announced April 2022.
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Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields
Authors:
V. Laurindo Jr.,
E. D. Guarin Castro,
G. M. Jacobsen,
E. R. C. de Oliveira,
J. F. M. Domenegueti,
B. Alén,
Yu. I. Mazur,
G. J. Salamo,
G. E. Marques,
E. Marega Jr.,
M. D. Teodoro,
V. Lopez-Richard
Abstract:
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms.…
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This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time.
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Submitted 4 January, 2022; v1 submitted 5 July, 2021;
originally announced July 2021.
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Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures
Authors:
V. Laurindo Jr.,
Yu. I. Mazur,
E. R. Cardozo de Oliveira,
B. Alén,
M. E. Ware,
E. Marega Jr.,
Z. Ya. Zhuchenko,
G. G. Tarasov,
G. E. Marques,
M. D. Teodoro,
G. J. Salamo
Abstract:
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in…
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A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL.
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Submitted 15 February, 2019;
originally announced February 2019.
