Showing 1–27 of 27 results for author: Lauhon, L J

Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells

Authors: Jonas Lähnemann, Megan O. Hill, Jesús Herranz, Oliver Marquardt, Guanhui Gao, Ali Al Hassan, Arman Davtyan, Stephan O. Hruszkewycz, Martin V. Holt, Chunyi Huang, Irene Calvo-Almazán, Uwe Jahn, Ullrich Pietsch, Lincoln J. Lauhon, Lutz Geelhaar

Abstract: While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite pol… ▽ More While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures. △ Less

Submitted 8 August, 2019; v1 submitted 18 March, 2019; originally announced March 2019.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01241, the supporting information is available (free of charge) under the same link

Journal ref: Nano Lett. 19, 4448 (2019)

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Authors: Alex Henning, Vinod K. Sangwan, Hadallia Bergeron, Itamar Balla, Zhiyuan Sun, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunc… ▽ More Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument limited response time of 1 us, which is 10 times faster than previously reported response times for planar Si/MoS2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors. △ Less

Submitted 24 May, 2018; originally announced May 2018.

Comments: 30 pages, 4 figures

Template-assisted scalable nanowire networks

Authors: Martin Friedl, Kris Cerveny, Pirmin Weigele, Gozde Tutuncuoglu, Sara Martí-Sánchez, Chunyi Huang, Taras Patlatiuk, Heidi Potts, Zhiyuan Sun, Megan O. Hill, Lucas Güniat, Wonjong Kim, Mahdi Zamani, Vladimir G. Dubrovskii, Jordi Arbiol, Lincoln J. Lauhon, Dominik Zumbuhl, Anna Fontcuberta i Morral

Abstract: Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecula… ▽ More Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs whose shapes are determined by surface and strain energy minimization. By controlling NM width and growth time, we demonstrate the formation of compositionally graded NWs with cross-sections less than 50 nm. Scaling the NWs below 20 nm leads to the formation of homogenous InGaAs NWs which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance towards scalable topological quantum computing. △ Less

Submitted 16 April, 2018; v1 submitted 1 March, 2018; originally announced March 2018.

Comments: 20 pages, 3 figures

Self-Aligned van der Waals Heterojunction Diodes and Transistors

Authors: Vinod K. Sangwan, Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon, Mark C. Hersam

Abstract: A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojun… ▽ More A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with sub-diffraction channel lengths in the range of 150 nm to 800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step towards the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems. △ Less

Submitted 3 February, 2018; originally announced February 2018.

High-Resolution Nanoscale Solid-State Nuclear Magnetic Resonance Spectroscopy

Authors: William Rose, Holger Haas, Angela Q. Chen, Nari Jeon, Lincoln J. Lauhon, David G. Cory, Raffi Budakian

Abstract: We present a new method for high-resolution nanoscale magnetic resonance imaging (nano-MRI) that combines the high spin sensitivity of nanowire-based magnetic resonance detection with high spectral resolution nuclear magnetic resonance (NMR) spectroscopy. By applying NMR pulses designed using optimal control theory, we demonstrate a factor of $500$ reduction of the proton spin resonance linewidth… ▽ More We present a new method for high-resolution nanoscale magnetic resonance imaging (nano-MRI) that combines the high spin sensitivity of nanowire-based magnetic resonance detection with high spectral resolution nuclear magnetic resonance (NMR) spectroscopy. By applying NMR pulses designed using optimal control theory, we demonstrate a factor of $500$ reduction of the proton spin resonance linewidth in a $(50\text{-nm})^{\text{3}}$ volume of polystyrene and image proton spins in one dimension with a spatial resolution below $2~\text{nm}$. △ Less

Submitted 4 July, 2017; originally announced July 2017.

Comments: Main text: 8 pages, 6 figures; supplementary information: 10 pages, 10 figures

Journal ref: Phys. Rev. X 8, 011030 (2018)

Control of interlayer delocalization in 2H transition metal dichalcogenides

Authors: Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, Tillmann Kubis

Abstract: It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac… ▽ More It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hop**. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence. △ Less

Submitted 15 September, 2017; v1 submitted 6 March, 2017; originally announced March 2017.

Comments: 11 pages, 15 figures

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Authors: Deep Jariwala, Sarah L. Howell, Kan-Sheng Chen, Junmo Kang, Vinod K. Sangwan, Stephen A. Filippone, Riccardo Turrisi, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of va… ▽ More The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the anti-ambipolar transfer characteristic. In addition, the pentacene-MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Comments: 5 figures and supporting information. To appear in Nano Letters

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Authors: V. K. Sangwan, D. Jariwala, I. S. Kim, K. -S. Chen, T. J. Marks, L. J. Lauhon, M. C. Hersam

Abstract: Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures wi… ▽ More Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to 1000 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Authors: Sarah L. Howell, Deep Jariwala, Chung-Chiang Wu, Kan-Sheng Chen, Vinod K. Sangwan, Junmo Kang, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistent… ▽ More The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistently observed between contacts on opposite sides of 1L-ML junctions, and a strong bias-dependent photocurrent is observed at the junction. Finite element device simulations with varying carrier concentrations and electron affinities show that a type II band alignment at single layer/multi-layer junctions reproduces both the rectifying electrical characteristics and the photocurrent response under bias. However, the zero-bias junction photocurrent and its energy dependence are not explained by conventional photovoltaic and photothermoelectric mechanisms, indicating the contributions of hot carriers. △ Less

Submitted 30 March, 2015; originally announced March 2015.

Comments: 5 figures plus supplement

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Authors: Deep Jariwala, Vinod K. Sangwan, Jung-Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials prese… ▽ More The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies. △ Less

Submitted 13 December, 2014; originally announced December 2014.

Comments: Manuscript (5 figures)+ supporting information, Nano Letters (2014)

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Authors: Joshua D. Wood, Spencer A. Wells, Deep Jariwala, Kan-Sheng Chen, EunKyung Cho, Vinod K. Sangwan, Xiaolong Liu, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 sa… ▽ More Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications. △ Less

Submitted 7 November, 2014; originally announced November 2014.

Comments: Accepted at Nano Letters; 18 pages, 5 figures, and 23 figure supporting information

Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$

Authors: In Soo Kim, Vinod K. Sangwan, Deep Jariwala, Joshua D. Wood, Spencer Park, Kan-Sheng Chen, Fengyuan Shi, Francisco Ruiz-Zepeda, Arturo Ponce, Miguel Jose-Yacaman, Vinayak P. Dravid, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monol… ▽ More Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS$_{2}$ have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS$_{2}$ during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO$_{x}$ species. As MoS$_{2-δ}$ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes non-uniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ~0 V. We conclude that the electrical and optical properties of monolayer MoS$_{2}$ crystals can be tuned via stoichiometry engineering to meet the requirements of various applications. △ Less

Submitted 17 September, 2014; originally announced September 2014.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

Authors: Vinod K. Sangwan, Deep Jariwala, Ken Everaerts, Julian J. McMorrow, Jianting He, Matthew Grayson, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate… ▽ More Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 inch wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics. △ Less

Submitted 7 February, 2014; originally announced February 2014.

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of hi… ▽ More With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 10 figures. ACS Nano, 2014, Article ASAP

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in… ▽ More In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 15 figures

Journal ref: Chem. Soc. Rev., 2013, 42, 2824

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Authors: Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu, Pradyumna L. Prabhumirashi, Michael L. Geier, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterost… ▽ More The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here, we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS2) as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10^4. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency (EQE) of 25% and fast photoresponse < 15 μs. Since SWCNTs have a diverse range of electrical properties as a function of chirality, and since an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Comments: 4 figures. Combined with supporting information Proceedings of the National Academy of Sciences of U.S.A. (2013)

Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

Authors: Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.0… ▽ More Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K. △ Less

Submitted 15 August, 2013; originally announced August 2013.

Comments: Nano Letters (2013)

Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy

Authors: Chung-Chiang Wu, Deep Jariwala, Vinod K. Sangwan, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively fo… ▽ More The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias. △ Less

Submitted 18 July, 2013; originally announced July 2013.

Comments: 4 figure letter + supporting information. Journal of Physical Chemistry Letters (2013)

Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Authors: Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with… ▽ More Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hop** model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. △ Less

Submitted 19 April, 2013; originally announced April 2013.

Nanoscale Fourier-transform MRI

Authors: John M. Nichol, Tyler R. Naibert, Eric R. Hemesath, Lincoln J. Lauhon, Raffi Budakian

Abstract: We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radiofrequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is spatially encoded by applying a series of intense magnetic field gradient pulses generated by focusing electric current through a nanometer-scale meta… ▽ More We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radiofrequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is spatially encoded by applying a series of intense magnetic field gradient pulses generated by focusing electric current through a nanometer-scale metal constriction. We demonstrate this technique using a silicon nanowire mechanical oscillator as a magnetic resonance sensor to image 1H spins in a polystyrene sample. We obtain a two-dimensional projection of the sample proton density with approximately 10-nm resolution. △ Less

Submitted 23 May, 2013; v1 submitted 12 February, 2013; originally announced February 2013.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. X 3, 031016 (2013)

Extrinsic and Intrinsic Photoresponse in Monodisperse Carbon Nanotube Thin Film Transistors

Authors: Erik Sczygelski, Vinod K. Sangwan, Chung-Chiang Wu, Heather N. Arnold, Ken Everaerts, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-IR excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shor… ▽ More Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-IR excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shorter excitation wavelengths, absorption by the Si substrate generates two types of photocurrent: a transient positive photoresponse, identified as a displacement current, and a persistent negative photocurrent that arises from photogating of the SWCNT thin film. △ Less

Submitted 9 February, 2013; originally announced February 2013.

Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

Authors: Vinod K. Sangwan, Deep Jariwala, Stephen A. Filippone, Hunter J. Karmel, James E. Johns, Justice M. P. Alaboson, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular,… ▽ More The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates. △ Less

Submitted 9 February, 2013; originally announced February 2013.

Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

Authors: Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M. P. Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate… ▽ More In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio (5 x 10^5), while also achieving hysteresis-free operation in ambient conditions. △ Less

Submitted 14 September, 2012; originally announced September 2012.

Nanomechanical detection of nuclear magnetic resonance using a silicon nanowire oscillator

Authors: John M. Nichol, Eric R. Hemesath, Lincoln J. Lauhon, Raffi Budakian

Abstract: We report the use of a silicon nanowire mechanical oscillator as a low-temperature nuclear magnetic resonance force sensor to detect the statistical polarization of 1H spins in polystyrene. Under operating conditions, the nanowire experienced negligible surface-induced dissipation and exhibited a nearly thermally-limited force noise of 1.9 aN^2/Hz in the measurement quadrature. In order to couple… ▽ More We report the use of a silicon nanowire mechanical oscillator as a low-temperature nuclear magnetic resonance force sensor to detect the statistical polarization of 1H spins in polystyrene. Under operating conditions, the nanowire experienced negligible surface-induced dissipation and exhibited a nearly thermally-limited force noise of 1.9 aN^2/Hz in the measurement quadrature. In order to couple the 1H spins to the nanowire oscillator, we have developed a new magnetic resonance force detection protocol which utilizes a nanoscale current-carrying wire to produce large time-dependent magnetic field gradients as well as the rf magnetic field. △ Less

Submitted 16 August, 2011; originally announced August 2011.

Comments: 14 pages, 5 figures

Low-Temperature Optical Characterization of Single CdS Nanowires

Authors: L. V. Titova, Thang B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. L. Lensch, L. J. Lauhon

Abstract: We use spatially resolved micro-PL imaging at low temperature to study optical properties of two sets of CdS nanowires grown using 20 nm and 50 nm catalysts. We find that low temperature PL of single nanowires is an ideal technique to gauge the quality of a given growth run, and moreover enables the collection of detailed spatial information on single wire electronic states. We use spatially resolved micro-PL imaging at low temperature to study optical properties of two sets of CdS nanowires grown using 20 nm and 50 nm catalysts. We find that low temperature PL of single nanowires is an ideal technique to gauge the quality of a given growth run, and moreover enables the collection of detailed spatial information on single wire electronic states. △ Less

Submitted 2 August, 2006; originally announced August 2006.

Comments: IEEE Nano 2006 Proceedings

Temperature dependent photoluminescence of single CdS nanowires

Authors: Thang Ba Hoang, L. V. Titova, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. L. Lensch, L. J. Lauhon

Abstract: Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is r… ▽ More Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Comments: 11 pages, 4 figures

Low temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires

Authors: L. V. Titova, Thang Ba Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. L. Lensch, L. J. Lauhon

Abstract: Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton transitions, with the transition energies and emission intensities varying along the length of the nanowire. In addition, several nanowires show spatially localized PL… ▽ More Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton transitions, with the transition energies and emission intensities varying along the length of the nanowire. In addition, several nanowires show spatially localized PL at lower energies which are associated with morphological irregularities in the nanowires. Time-resolved PL measurements indicate that exciton recombination in all CdS nanowires is dominated by non-radiative recombination at the surface of the nanowires. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Comments: 9 pages, 3 figures, to be published in Applied Physics Letters