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Time-frequency analysis assisted reconstruction of ruthenium optical constants in the sub-EUV spectral range 8nm-23.75nm
Authors:
Qais Saadeh,
Philipp Naujok,
Vicky Philipsen,
Philipp Hönicke,
Christian Laubis,
Christian Buchholz,
Anna Andrle,
Christian Stadelhoff,
Heiko Mentzel,
Anja Schönstedt,
Victor Soltwisch,
Frank Scholze
Abstract:
The optical constants of ruthenium in the spectral range 8 nm to 23.75 nm with their corresponding uncertainties are derived from the reflectance of a sputtered ruthenium thin film in the Extreme Ultraviolet (EUV) spectral range measured using monochromatized synchrotron radiation. This work emphasizes the correlation between structure modelling and the reconstructed optical parameters in a detail…
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The optical constants of ruthenium in the spectral range 8 nm to 23.75 nm with their corresponding uncertainties are derived from the reflectance of a sputtered ruthenium thin film in the Extreme Ultraviolet (EUV) spectral range measured using monochromatized synchrotron radiation. This work emphasizes the correlation between structure modelling and the reconstructed optical parameters in a detailed inverse-problem optimization strategy. Complementary X-ray Reflectivity (XRR) measurements are coupled with Markov chain Monte Carlo (MCMC) based Bayesian inferences and quasi-model-independent methods to create a model factoring the sample's oxidation, contamination, and surface roughness. The sensitivity of the modelling scheme is tested and verified against contamination and oxidation. A notable approach mitigating the high dimensionality of the reconstruction problem is elaborated with the results of this work compared to two previously published datasets. The presented dataset is of high interest for the continuing development of Extreme Ultraviolet Lithography (EUVL) and EUV astronomy optical systems.
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Submitted 22 March, 2021;
originally announced March 2021.
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Reconstructing Detailed Line Profiles of Lamellar Gratings from GISAXS Patterns with a Maxwell Solver
Authors:
Victor Soltwisch,
Analia Fernandez Herrero,
Mika Pflüger,
Anton Haase,
Jürgen Probst,
Christian Laubis,
Michael Krumrey,
Frank Scholze
Abstract:
Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering (GISAXS) by using the diffraction patterns to reconstruct the surface shape. To model visible light scattering, rigorous calculations of the near and far field by numerically solving Maxwell's equations with a finite-element method are well established. The application of this technique to X-ray…
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Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering (GISAXS) by using the diffraction patterns to reconstruct the surface shape. To model visible light scattering, rigorous calculations of the near and far field by numerically solving Maxwell's equations with a finite-element method are well established. The application of this technique to X-rays is still challenging, due to the discrepancy between incident wavelength and finite-element size. This drawback vanishes for GISAXS due to the small angles of incidence, the conical scattering geometry and the periodicity of the surface structures, which allows a rigorous computation of the diffraction efficiencies with sufficient numerical precision. To develop dimensional metrology tools based on GISAXS, lamellar gratings with line widths down to 55 nm were produced by state-of-the-art e-beam lithography and then etched into silicon. The high surface sensitivity of GISAXS in conjunction with a Maxwell solver allows a detailed reconstruction of the grating line shape also for thick, non-homogeneous substrates. The reconstructed geometrical line shape models are statistically validated by applying a Markov chain Monte Carlo (MCMC) sampling technique which reveals that GISAXS is able to reconstruct critical parameters like the widths of the lines with sub-nm uncertainty.
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Submitted 4 October, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
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Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations
Authors:
S. Burger,
L. Zschiedrich,
J. Pomplun,
F. Schmidt,
A. Kato,
C. Laubis,
F. Scholze
Abstract:
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
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Submitted 21 October, 2011;
originally announced October 2011.
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Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis
Authors:
J. Pomplun,
S. Burger,
F. Schmidt,
F. Scholze,
C. Laubis,
U. Dersch
Abstract:
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In…
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Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.
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Submitted 11 November, 2010;
originally announced November 2010.
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Rigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters
Authors:
J. Pomplun,
S. Burger,
F. Schmidt,
L. Zschiedrich,
F. Scholze,
C. Laubis,
U. Dersch
Abstract:
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives…
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We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements.
This work results from a collaboration between Advanced Mask Technology Center (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB, scatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical simulation).
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Submitted 26 October, 2006;
originally announced October 2006.
