Showing 1–10 of 10 results for author: Lassagne, B

Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene

Authors: Tom Fournier, Kelvin Cruz, Marc Monthioux, Benjamin Lassagne, Lionel Petit, Sébastien Moyano, Pascal Puech, Fabrice Piazza

Abstract: Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying… ▽ More Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying the material through partial or full dehydrogenation, and subsequent alteration of its electronic properties. This work reports a study of various dehydrogenation conditions of hydrogenated or hydrogen-etched monolayer graphene (1LG), either free-standing or supported by an interferential (SiO2/Si) substrate, using incremental annealing under nitrogen atmosphere up to 400 {\textdegree}C. Materials were investigated by Raman spectroscopy. Indeed, it has been known since 2012 that the intensity ratio of two Raman bands activated by double resonance, D over D' (ID/ID') can be used to identify the type of defects in defective graphene. It is shown that hydrogenated 1LG, characterized by a large ID/ID' ratio (~9-15), is stable provided annealing remains below 300 {\textdegree}C. On the other hand, defective 1LG resulting from hydrogen etching remains stable up to 400 {\textdegree}C, whether the 1LG is hydrogenated on one side or both sides, while a modification in the type and proportions of defects is likely. Experimental conditions for the safe use of Raman spectroscopy, otherwise able to induce specimen overheating because of the laser energy and power, are also determined and discussed. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Journal ref: Materials Chemistry and Physics, 2024, 321, pp.129490

Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Authors: Lionel Petit, Tom Fournier, Géraldine Ballon, Cédric Robert, Delphine Lagarde, Pascal Puech, Thomas Blon, Benjamin Lassagne

Abstract: Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He… ▽ More Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors. △ Less

Submitted 17 March, 2024; originally announced March 2024.

Comments: 27 pages including supplemental material, 12 figures in the main text and 6 figures in the supplemental material

Electron and hole do** of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Authors: Jules Fraunié, Rayan Jamil, Richard Kantelberg, Sébastien Roux, Lionel Petit, Emmanuel Lepleux, Louis Pacheco, Kenji Watanabe, Takashi Taniguchi, Vincent Jacques, Laurent Lombez, Mikhail M. Glazov, Benjamin Lassagne, Xavier Marie, Cedric Robert

Abstract: For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show t… ▽ More For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p do** in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the do** density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure. △ Less

Submitted 6 December, 2023; v1 submitted 16 July, 2023; originally announced July 2023.

Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

Authors: H. Tornatzky, C. Robert, P. Renucci, B. Han, T. Blon, B. Lassagne, G. Ballon, Y. Lu, K. Watanabe, T. Taniguchi, B. Urbaszek, J. M. J. Lopes, X. Marie

Abstract: We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i… ▽ More We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Platinum tripods as nanometric frequency multiplexing devices

Authors: B. C. Camargo, B. Lassagne, R. Arenal, C. Gatel, T. Blon, G. Viau, L-M Lacroix, W. Escoffier

Abstract: Electrical and structural characterization of nano-particles are very important steps to determine their potential applications in microelectronics. In this paper, we adress the crystallographic and electric transport properties of soft-chemistry-grown nanometric Pt tribranches. We report that Pt nanostars grown from the reduction of $\text{H}_{2}\text{PtCl}_6$ salt in pure oleylamine present a re… ▽ More Electrical and structural characterization of nano-particles are very important steps to determine their potential applications in microelectronics. In this paper, we adress the crystallographic and electric transport properties of soft-chemistry-grown nanometric Pt tribranches. We report that Pt nanostars grown from the reduction of $\text{H}_{2}\text{PtCl}_6$ salt in pure oleylamine present a remarkable crystalline structure and a deeply metallic character despite being grown under mild conditions. We demonstrate that such devices are able to operate at current densities surpassing $200$ MA/$\text{cm}^2$, actuating as highly compact frequency multiplexers in the non-ohmic regime. △ Less

Submitted 26 June, 2018; originally announced June 2018.

Journal ref: Nanoscale. 2017 Oct 5;9(38):14635-14640

Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures

Authors: C. Robert, M. A. Semina, F. Cadiz, M. Manca, E. Courtade, T. Taniguchi, K. Watanabe, H. Cai, S. Tongay, B. Lassagne, P. Renucci, T. Amand, X. Marie, M. M. Glazov, B. Urbaszek

Abstract: The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct… ▽ More The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct comparison between transitions in optical spectra with different oscillator strength more challenging. Here we reveal in reflectivity and in photoluminescence excitation spectroscopy the presence of excited states of the A-exciton in MoS2 monolayers encapsulated in hBN layers of calibrated thickness, allowing to extrapolate an exciton binding energy of about 220 meV. We theoretically reproduce the energy separations and oscillator strengths measured in reflectivity by combining the exciton resonances calculated for a screened two-dimensional Coulomb potential with transfer matrix calculations of the reflectivity for the van der Waals structure. Our analysis shows a very different evolution of the exciton oscillator strength with principal quantum number for the screened Coulomb potential as compared to the ideal two-dimensional hydrogen model. △ Less

Submitted 5 December, 2017; originally announced December 2017.

Comments: 7 pages, 3 figures, supplement

Journal ref: Phys. Rev. Materials 2, 011001 (2018)

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers

Authors: C. Robert, D. Lagarde, F. Cadiz, G. Wang, B. Lassagne, T. Amand, A. Balocchi, P. Renucci, S. Tongay, B. Urbaszek, X. Marie

Abstract: We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar… ▽ More We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium. △ Less

Submitted 3 March, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 205423 (2016)

Discrete quantum dot like emitters in monolayer MoSe2: Spatial map**, Magneto-optics and Charge tuning

Authors: Artur Branny, Gang Wang, Santosh Kumar, Cedric Robert, Benjamin Lassagne, Xavier Marie, Brian D. Gerardot, Bernhard Urbaszek

Abstract: Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial map** shows a correlation between the… ▽ More Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial map** shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage. The control of the emission properties of these quantum dot like emitters paves the way for further engineering of the light matter interaction in these atomically thin materials. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 5 pages, 2 figures

Journal ref: Applied Physics Letters 108, 142101 (2016)

Dissipative and conservative nonlinearity in carbon nanotube and graphene mechanical resonators

Authors: J. Moser, A. Eichler, B. Lassagne, J. Chaste, Y. Tarakanov, J. Kinaret, I. Wilson-Rae, A. Bachtold

Abstract: Graphene and carbon nanotubes represent the ultimate size limit of one and two-dimensional nanoelectromechanical resonators. Because of their reduced dimensionality, graphene and carbon nanotubes display unusual mechanical behavior; in particular, their dynamics is highly nonlinear. Here, we review several types of nonlinear behavior in resonators made from nanotubes and graphene. We first discuss… ▽ More Graphene and carbon nanotubes represent the ultimate size limit of one and two-dimensional nanoelectromechanical resonators. Because of their reduced dimensionality, graphene and carbon nanotubes display unusual mechanical behavior; in particular, their dynamics is highly nonlinear. Here, we review several types of nonlinear behavior in resonators made from nanotubes and graphene. We first discuss an unprecedented scenario where dam** is described by a nonlinear force. This scenario is supported by several experimental facts: (i) the quality factor varies with the amplitude of the motion as a power law whose exponent coincides with the value predicted by the nonlinear dam** model, (ii) hysteretic behavior (of the motional amplitude as a function of driving frequency) is absent in some of our resonators even for large driving forces, as expected when nonlinear dam** forces are large, and (iii) when we quantify the linear dam** force (by performing parametric excitation measurements) we find that it is significantly smaller than the nonlinear dam** force. We then review parametric excitation measurements, an alternative actuation method which is based on nonlinear dynamics. Finally, we discuss experiments where the mechanical motion is coupled to electron transport through a nanotube. The coupling can be made so strong that the associated force acting on the nanotube becomes highly nonlinear with displacement and velocity. Overall, graphene and nanotube resonators hold promise for future studies on classical and quantum nonlinear dynamics. △ Less

Submitted 6 October, 2011; originally announced October 2011.

Comments: To appear in "Fluctuating Nonlinear Oscillators", Edited by Mark Dykman

Imaging mechanical vibrations in suspended graphene sheets

Authors: D. Garcia-Sanchez, A. M. van der Zande, A. San Paulo, B. Lassagne, P. L. McEuen, A. Bachtold

Abstract: We carried out measurements on nanoelectromechanical systems based on multilayer graphene sheets suspended over trenches in silicon oxide. The motion of the suspended sheets was electrostatically driven at resonance using applied radio-frequency voltages. The mechanical vibrations were detected using a novel form of scanning probe microscopy, which allowed identification and spatial imaging of t… ▽ More We carried out measurements on nanoelectromechanical systems based on multilayer graphene sheets suspended over trenches in silicon oxide. The motion of the suspended sheets was electrostatically driven at resonance using applied radio-frequency voltages. The mechanical vibrations were detected using a novel form of scanning probe microscopy, which allowed identification and spatial imaging of the shape of the mechanical eigenmodes. In as many as half the resonators measured, we observed a new class of exotic nanoscale vibration eigenmodes not predicted by the elastic beam theory, where the amplitude of vibration is maximum at the free edges. By modeling the suspended sheets with the finite element method, these edge eigenmodes are shown to be the result of non-uniform stress with remarkably large magnitudes (up to 1.5 GPa). This non-uniform stress, which arises from the way graphene is prepared by pressing or rubbing bulk graphite against another surface, should be taken into account in future studies on electronic and mechanical properties of graphene. △ Less

Submitted 22 May, 2008; originally announced May 2008.

Journal ref: Nano Lett., 8, 1399 (2008)