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Nonreciprocal Coulomb Drag between Quantum Wires in the quasi-1D regime
Authors:
R. Makaju,
H. Kassar,
S. M. Daloglu,
A. Huynh,
A. Levchenko,
S. J. Addamane,
D. Laroche
Abstract:
Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. Here, we report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple 1D sub-band regime that break Onsager's reciprocity…
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Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. Here, we report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple 1D sub-band regime that break Onsager's reciprocity upon both layer and current direction reversal, in contrast to prior 1D Coulomb drag results. The drag signal shows nonlinear I-V characteristics, which are well characterized by a third-order polynomial fit. These findings are qualitatively consistent with a rectified drag signal induced by charge fluctuations. However, the nonmonotonic temperature dependence of this drag signal suggests that strong electron-electron interactions, expected within the Tomonaga-Luttinger liquid framework, remain important and standard interaction models are insufficient to capture the qualitative nature of rectified 1D Coulomb drag.
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Submitted 17 January, 2024; v1 submitted 20 October, 2023;
originally announced October 2023.
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Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure
Authors:
D. Chen,
S. Cai,
N. -W. Hsu,
S. -H. Huang,
Y. Chuang,
E. Nielsen,
J. -Y. Li,
C. W. Liu,
T. M. Lu,
D. Laroche
Abstract:
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $ν_{\text{T}} = 1$ and $ν_{\text{T}} = 2$ are obse…
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We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $ν_{\text{T}} = 1$ and $ν_{\text{T}} = 2$ are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of density. The $ν_{\text{T}} = 1$ gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the $ν_{\text{T}} = 2$ gap to the single particle tunneling energy, $Δ_{\text{SAS}}$, obtained from Schrödinger-Poisson (SP) simulations, evidence for the onset of spontaneous inter-layer coherence (SIC) is observed for a relative filling fraction imbalance smaller than ${\sim}50\%$
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Submitted 6 December, 2021;
originally announced December 2021.
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Broadband microwave spectroscopy of semiconductor nanowire-based Cooper-pair transistors
Authors:
Alex Proutski,
Dominique Laroche,
Bas van 't Hooft,
Peter Krogstrup,
Jesper Nygård,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits. Utilizing gate-tunable semiconductor channels as weak links, the energy scale associated with the Josephson tunneling can be changed with respect to the charging energy of the island, tuning the extent of its charge fl…
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The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits. Utilizing gate-tunable semiconductor channels as weak links, the energy scale associated with the Josephson tunneling can be changed with respect to the charging energy of the island, tuning the extent of its charge fluctuations. Here, we directly demonstrate this control by map** the energy level structure of a CPT made of an indium arsenide nanowire (NW) with a superconducting aluminum shell. We extract the device parameters based on the exhaustive modeling of the quantum dynamics of the phase-biased nanowire CPT and directly measure the even-odd parity occupation ratio as a function of the device temperature, relevant for superconducting and prospective topological qubits.
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Submitted 4 March, 2020; v1 submitted 30 January, 2019;
originally announced January 2019.
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Observation of the 4$π$-periodic Josephson effect in indium arsenide nanowires
Authors:
Dominique Laroche,
Daniël Bouman,
David J. van Woerkom,
Alex Proutski,
Chaitanya Murthy,
Dmitry I. Pikulin,
Chetan Nayak,
Ruben J. J. van Gulik,
Jesper Nygård,
Peter Krogstrup,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum informa…
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Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum information stored in the MZM. As a next step towards topological quantum computation, charge parity conserving experiments based on the Josephson effect are required, which can also help exclude suggested non-topological origins of the zero bias conductance anomaly. Here we report the direct measurement of the Josephson radiation frequency in InAs nanowires with epitaxial aluminium shells. For the first time, we observe the $4π$-periodic Josephson effect above a magnetic field of $\approx 200\,$mT, consistent with the estimated and measured topological phase transition of similar devices.
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Submitted 4 March, 2020; v1 submitted 22 December, 2017;
originally announced December 2017.
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Atomic-layer do** of SiGe heterostructures for atomic-precision donor devices
Authors:
E. Bussmann,
John King Gamble,
J. C. Koepke,
D. Laroche,
S. H. Huang,
Y. Chuang,
J. -Y. Li,
C. W. Liu,
B. S. Swartzentruber,
M. P. Lilly,
M. S. Carroll,
T. -M. Lu
Abstract:
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated…
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As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer do** is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $Ω$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $μ_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer do** in pure Si and Ge. The magnitude of $μ_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.
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Submitted 17 October, 2017;
originally announced October 2017.
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Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
Authors:
T. M. Lu,
L. A. Tracy,
D. Laroche,
S. -H. Huang,
Y. Chuang,
Y. -H. Su,
J. -Y. Li,
C. W. Liu
Abstract:
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show t…
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Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $ν=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.
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Submitted 7 June, 2017;
originally announced June 2017.
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Mechanical Flip-Chip for Ultra-High Electron Mobility Devices
Authors:
K. Bennaceur,
B. A. Schmidt,
S. Gaucher,
D. Laroche,
M. P. Lilly,
J. L. Reno,
K. W. West,
L. N. Pfeiffer,
G. Gervais
Abstract:
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing…
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Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.
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Submitted 17 March, 2015;
originally announced March 2015.
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1D-1D Coulomb Drag Signature of a Luttinger Liquid
Authors:
D. Laroche,
G. Gervais,
M. P. Lilly,
J. L. Reno
Abstract:
We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed in three distinct devices at a temperature…
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We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed in three distinct devices at a temperature $T^* \sim 1.6$ K. This crossover in Coulomb drag behaviour is consistent with Tomonaga-Luttinger liquid models for the 1D-1D drag between quantum wires.
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Submitted 12 February, 2014; v1 submitted 17 December, 2013;
originally announced December 2013.
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Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires
Authors:
D. Laroche,
G. Gervais,
M. P. Lilly,
J. L. Reno
Abstract:
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such…
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Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier $\gtrsim$ 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by $\sim$ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%.
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Submitted 20 August, 2012; v1 submitted 30 August, 2010;
originally announced August 2010.
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Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases
Authors:
D. Laroche,
S. Das Sarma,
G. Gervais,
M. P. Lilly,
J. L. Reno
Abstract:
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of t…
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We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.
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Submitted 14 April, 2010; v1 submitted 14 August, 2009;
originally announced August 2009.
