Showing 1–26 of 26 results for author: Lapointe, J

On-demand single photon emission in the telecom C-band from nanowire-based quantum dots

Authors: Andrew N. Wakileh, Lingxi Yu, Doğa Dokuz, Sofiane Haffouz, Xiaohua Wu, Jean Lapointe, David B. Northeast, Robin L. Williams, Nir Rotenberg, Philip J. Poole, Dan Dalacu

Abstract: Single photon sources operating on-demand at telecom wavelengths are required in fiber-based quantum secure communication technologies. In this work we demonstrate single photon emission from position-controlled nanowire quantum dots emitting at λ > 1530 nm. Using above-band pulsed excitation, we obtain single photon purities of g(2)(0) = 0.062. These results represent an important step towards th… ▽ More Single photon sources operating on-demand at telecom wavelengths are required in fiber-based quantum secure communication technologies. In this work we demonstrate single photon emission from position-controlled nanowire quantum dots emitting at λ > 1530 nm. Using above-band pulsed excitation, we obtain single photon purities of g(2)(0) = 0.062. These results represent an important step towards the scalable manufacture of high efficiency, high rate single photon emitters in the telecom C-band. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Approaching transform-limited photons from nanowire quantum dots excited above-band

Authors: Patrick Laferrière, Aria Yin, Edith Yeung, Leila Kusmic, Marek Korkusinski, Payman Rasekh, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is presen… ▽ More We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is present in each device, (ii) dot nucleation proceeds without the formation of a wetting layer, and (iii) the sidewalls of the photonic nanowire are comprised not of etched facets, but of epitaxially grown crystal planes. Using these structures we achieve linewidths of 2x the transform limit, unprecedented for above-band excitation. We also demonstrate a highly nonlinear dependence of the linewidth on both excitation power and temperature which can be described by an independent Boson model that considers both deformation and piezoelectric exciton-phonon coupling. We find that for sufficiently low excitation powers and temperatures, the observed excess broadening is not dominated by phonon dephasing, a surprising result considering the high phonon occupation that occurs with above-band excitation. △ Less

Submitted 29 July, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 107, (2023) 15522

Charge detection using a WSe$_2$ van der Waals heterostructure

Authors: Justin Boddison-Chouinard, Alex Bogan, Norman Fong, Pedro Barrios, Jean Lapointe, Kenji Watanabe, Takashi Taniguchi, Adina Luican-Mayer, Louis Gaudreau

Abstract: Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection sc… ▽ More Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Unity yield of deterministically positioned quantum dot single photon sources

Authors: Patrick Laferrière, Edith Yeung, Isabelle Miron, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as l… ▽ More We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures

Optical fibre-based (plug-and-play) single photon source using InAsP quantum dot nanowires and gradient-index lens collection

Authors: David B. Northeast, John F. Weber, Dan Dalacu, Jason Phoenix, Philip J. Poole, Geof Aers, Jean Lapointe, Robin L. Williams

Abstract: We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled… ▽ More We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35% and an overall single photon collection efficiency of 10%. We also demonstrate "plug and play" operation using room temperature photoluminescence from the InP nanowire for room temperature alignment. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Spectrum-free integrated photonic remote molecular identification and sensing

Authors: Ross Cheriton, Suresh Sivanandam, Adam Densmore, Ernst J. W. de Mooij, Daniele Melati, Mohsen Kamandar Dezfouli, Pavel Cheben, Danxia Xu, Jens H. Schmid, Jean Lapointe, Rubin Ma, Shurui Wang, Luc Simard, Siegfried Janz

Abstract: Absorption spectroscopy is widely used in sensing and astronomy to understand molecular compositions on microscopic to cosmological scales. However, typical dispersive spectroscopic techniques require multichannel detection, fundamentally limiting the ability to detect extremely weak signals when compared to direct photometric methods. We report the realization of direct spectral molecular detecti… ▽ More Absorption spectroscopy is widely used in sensing and astronomy to understand molecular compositions on microscopic to cosmological scales. However, typical dispersive spectroscopic techniques require multichannel detection, fundamentally limiting the ability to detect extremely weak signals when compared to direct photometric methods. We report the realization of direct spectral molecular detection using a silicon nanophotonic waveguide resonator, obviating dispersive spectral acquisition. We use a thermally tunable silicon ring resonator with a transmission spectrum matched and cross-correlated to the quasi-periodic vibronic absorption lines of hydrogen cyanide. We show that the correlation peak amplitude is proportional to the number of overlap** ring resonances and gas lines, and that molecular specificity is obtained from the phase of the correlation signal in a single detection channel. Our results demonstrate on-chip correlation spectroscopy that is less restricted by the signal-to-noise penalty of other spectroscopic approaches, enabling the detection of faint spectral signatures. △ Less

Submitted 26 August, 2020; v1 submitted 18 May, 2020; originally announced May 2020.

Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Authors: Jens H. Schmid, Mohamed Rahim, Grzegorz Pakulski, Martin Vachon, Siegfried Janz, Pavel Cheben, Dan-Xia Xu, Philip J. Poole, Pedro Barrios, Weihong Jiang, Jean Lapointe, Daniele Melati

Abstract: An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth. An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth. △ Less

Submitted 30 March, 2020; originally announced May 2020.

Monolithic integration of single photon sources via evanescent coupling of tapered InP nanowires to SiN waveguides

Authors: Khaled Mnaymneh, Dan Dalacu, Joseph McKee, Jean Lapointe, Sofiane Haffouz, Philip J. Poole, Geof C. Aers, Robin L. Williams

Abstract: We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100… ▽ More We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter onfiguration provides a self-contained, all-fiber, single photon source suitable as a plug-and-play solution for applications requiring bright, on-demand single photons. Using InAsP quantum dots embedded in InP nanowire waveguides, we demonstrate coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97%. △ Less

Submitted 8 December, 2018; originally announced January 2019.

Theory and experiments of coherent photon coupling in semiconductor nanowire waveguides with quantum dot molecules

Authors: Chelsea Carlson, Dan Dalacu, Chris Gustin, Sofiane Haffouz, Xiaohua Wu, Jean Lapointe, Robin L. Williams, Philip J. Poole, Stephen Hughes

Abstract: We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled quantum dots, treated as point dipoles, fully accountingfor retardation effects, and demonstrate the signatures of coherent and incoherent coupling througha pronounc… ▽ More We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled quantum dots, treated as point dipoles, fully accountingfor retardation effects, and demonstrate the signatures of coherent and incoherent coupling througha pronounced splitting of the uncoupled quantum dot resonances and modified spectral broadening.In the weak excitation regime, the classical Green functions used in models are verified and justifiedthrough full 3D solutions of Maxwell equations for nanowire waveguides, specifically using finite-difference time-domain techniques, showing how both waveguide modes and near-field evanescentmode coupling is important. The theory exploits an ensemble-based quantum description, and andan intuitive eigenmode-expansion based Maxwell theory. We then demonstrate how the molecularresonances (in the presence of coupling) take on the form of bright and dark (or quasi-dark) reso-nances, and study how these depend on the excitation and detection conditions. To go beyond theweak excitation regime, we also introduce a quantum master equation approach to model the non-linear spectra from an increasing incoherent pump field, which shows the role of the pump field onthe oscillator strengths and broadening of the molecular resonances, with and without pure dephas-ing. Next, we present experimental photoluminescence spectra for spatially-separated quantum dotmolecules (InAsP) in InP nanowires, which show clear signatures of pronounced splittings, thoughthey also highlight additional mechanisms that are not accounted for in the dipole-dipole couplingmodel. Two different approaches are taken to control the spatial separation of the quantum dotmolecules, and we discuss the advantages and disadvantages of each. △ Less

Submitted 18 April, 2019; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 20 pages, 16 figures

Journal ref: Phys. Rev. B 99, 085311 (2019)

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

Authors: Alexis Fiset-Cyr, Dan Dalacu, Sofiane Haffouz, Philip J. Poole, Jean Lapointe, Geof C. Aers, Robin L. William

Abstract: We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct satu… ▽ More We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks. △ Less

Submitted 8 April, 2018; originally announced April 2018.

Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide

Authors: Sofiane Haffouz, Dan Dalacu, Philip J. Poole, Jean Lapointe, Daniel Poitras, Khaled Mnaymneh, Xiaohua Wu, Marek Korkusinski, Robin L. Williams

Abstract: We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly t… ▽ More We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots. △ Less

Submitted 2 February, 2018; originally announced February 2018.

A solid state source of photon triplets based on quantum dot molecules

Authors: Milad Khoshnegar, Tobias Huber, Ana Predojević, Dan Dalacu, Maximilian Prilmüller, Jean Lapointe, Xiaohua Wu, Philippe Tamarat, Brahim Lounis, Philip Poole, Gregor Weihs, Hamed Majedi

Abstract: Producing advanced quantum states of light is a priority in quantum information technologies. While remarkable progress has been made on single photons and photon pairs, multipartite correlated photon states are usually produced in purely optical systems by post-selection or cascading, with extremely low efficiency and exponentially poor scaling. Multipartite states enable improved tests of the fo… ▽ More Producing advanced quantum states of light is a priority in quantum information technologies. While remarkable progress has been made on single photons and photon pairs, multipartite correlated photon states are usually produced in purely optical systems by post-selection or cascading, with extremely low efficiency and exponentially poor scaling. Multipartite states enable improved tests of the foundations of quantum mechanics as well as implementations of complex quantum optical networks and protocols. It would be favorable to directly generate these states using solid state systems, for better scaling, simpler handling, and the promise of reversible transfer of quantum information between stationary and flying qubits. Here we use the ground states of two optically active coupled quantum dots to directly produce photon triplets. The wavefunctions of photogenerated excitons localized in these ground states are correlated via molecular hybridization and Coulomb interactions. The formation of a triexciton leads to a triple cascade recombination and sequential emission of three photons with strong correlations. The quantum dot molecule is embedded in an epitaxially grown nanowire engineered for single-mode waveguiding and improved extraction efficiency at the emission wavelength. We record 65.62 photon triplets per minute, surpassing rates of all earlier reported sources, in spite of the moderate efficiency of our detectors. Our structure and data represent a breakthrough towards implementing multipartite photon entanglement and multi-qubit readout schemes in solid state devices, suitable for integrated quantum information processing. △ Less

Submitted 16 September, 2017; v1 submitted 20 October, 2015; originally announced October 2015.

Comments: 27 pages, 3 figures

Journal ref: Nature Communications 8 15716 (2017)

Overcoming power broadening of the quantum dot emission in a pure wurtzite nanowire

Authors: Michael E. Reimer, Gabriele Bulgarini, Reinier W. Heeres, Barbara J. Witek, Marijn A. M. Versteegh, Dan Dalacu, Jean Lapointe, Philip J. Poole, Val Zwiller

Abstract: One of the key challenges in develo** quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this po… ▽ More One of the key challenges in develo** quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this power broadening regime and demonstrate the longest coherence at exciton saturation where the detection count rates are highest. We detect single-photon count rates of 460,000 counts per second under pulsed laser excitation while maintaining a single-photon purity of greater than 99%. Importantly, the enhanced coherence is attained with quantum dots in ultraclean wurtzite InP nanowires, where the surrounding charge traps are filled by exciting above the wurtzite InP nanowire bandgap. By raising the excitation intensity, the number of possible charge configurations in the quantum dot environment is reduced, resulting in a narrower emission spectrum. Via Monte Carlo simulations we explain the observed narrowing of the emission spectrum with increasing power. Cooling down the sample to 300 mK, we further enhance the single-photon coherence two-fold as compared to operation at 4.5 K, resulting in a homogeneous coherence time, T2, of 1.2 ns. △ Less

Submitted 10 July, 2014; originally announced July 2014.

Comments: 13 pages, including supplementary information

Journal ref: Phys. Rev. B 93, 195316 (2016)

A Semiconductor Under Insulator Technology in Indium Phosphide

Authors: Khaled Mnaymneh, Dan Dalacu, Simon Frédérick, Jean Lapointe, Philip J. Poole, Robin L. Williams

Abstract: This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI… ▽ More This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems. △ Less

Submitted 2 October, 2012; originally announced October 2012.

Influence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system

Authors: S. Hughes, P. Yao, F. Milde, A. Knorr, D. Dalacu, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, J. Lapointe, R. Cheriton, R. L. Williams

Abstract: We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model… ▽ More We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model. We derive simple user-friendly analytical expressions for the linear quantum light spectrum, including the influence from both exciton and cavity-emission decay channels. In the regime of semiconductor cavity-QED, we study cavity emission for various exciton-cavity detunings and demonstrate rich spectral asymmetries as well as cavity-mode suppression and enhancement effects. Our technique is nonperturbative, and non-Markovian, and can be applied to study photon emission from a wide range of semiconductor quantum dot structures, including waveguides and coupled cavity arrays. We compare our theory directly to recent and apparently puzzling experimental data for a single site-controlled quantum dot in a photonic crystal cavity and show good agreement as a function of cavity-dot detuning and as a function of temperature. △ Less

Submitted 3 February, 2011; originally announced February 2011.

Comments: Regular Paper, Submitted to PRB, Dec, 2010

Journal ref: Physical Review B 83, 165313 (2011)

Tuning the exciton g-factor in single InAs/InP quantum dots

Authors: D. Kim, W. Sheng, P. J. Poole, D. Dalacu, J. Lefebvre, J. Lapointe, M. E. Reimer, G. C. Aers, R. L. Williams

Abstract: Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight bind… ▽ More Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates. △ Less

Submitted 10 December, 2008; v1 submitted 16 September, 2008; originally announced September 2008.

Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot

Authors: Michael E. Reimer, Marek Korkusinski, Jacques Lefebvre, Jean Lapointe, Philip J. Poole, Geof C. Aers, Dan Dalacu, W. Ross McKinnon, Simon Frederick, Pawel Hawrylak, Robin L. Williams

Abstract: Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-… ▽ More Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry. △ Less

Submitted 7 June, 2007; originally announced June 2007.

Comments: 4 pages, 4 figures submitted to Physical Review Letters

Coherent Transport Through a Quadruple Point in a Few Electron Triple Dot

Authors: L. Gaudreau, A. S. Sachrajda, S. Studenikin, P. Zawadzki, A. Kam, J. Lapointe

Abstract: A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experim… ▽ More A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a Pi phase shift in magneto-conductance oscillations as one passes through the quadruple point. △ Less

Submitted 18 November, 2006; originally announced November 2006.

Comments: To be published in ICPS Conf. Proceedings 2006

Stability Diagram of a Few-Electron Triple Dot

Authors: Louis Gaudreau, Sergei Studenikin, Andy Sachrajda, Piotr Zawadzki, Alicia Kam, Jean Lapointe, Marek Korkusinski, Pawel Hawrylak

Abstract: Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a sign… ▽ More Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models. △ Less

Submitted 8 September, 2008; v1 submitted 25 January, 2006; originally announced January 2006.

Journal ref: PRL 97, 036807 (2006)

Charge Sensing of an Artificial H2+ Molecule

Authors: M. Pioro-Ladriere, M. R. Abolfath, P. Zawadzki, J. Lapointe, S. A. Studenikin, A. S. Sachrajda, P. Hawrylak

Abstract: We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and… ▽ More We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device. △ Less

Submitted 28 July, 2005; v1 submitted 1 April, 2005; originally announced April 2005.

Comments: 5 pages, 4 figures. Revised version with added material. To be published in Physical Review B

Journal ref: Phys. Rev. B 72, 125307 (2005)

The origin of switching noise in GaAs/AlGaAs lateral gated devices

Authors: M. Pioro-Ladrière, J. H. Davies, A. R. Long, A. S. Sachrajda, L. Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. Wasilewski, S. A. Studenikin

Abstract: We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this nois… ▽ More We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments. △ Less

Submitted 14 June, 2005; v1 submitted 24 March, 2005; originally announced March 2005.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 72, 115331 (2005)

The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Authors: M. Pioro-Ladriere, A. Usher, A. S. Sachrajda, J. Lapointe, J. Gupta, Z. Wasilewski, S. Studinikin, M. Elliott

Abstract: Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These ob… ▽ More Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices. △ Less

Submitted 17 March, 2005; originally announced March 2005.

Comments: 5 pages, 4 figures

Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime

Authors: M. Ciorga, M. Pioro-Ladrière, P. Zawadzki, J. Lapointe, Z. Wasilewski, A. S. Sachrajda

Abstract: We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is fo… ▽ More We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in the electrochemical potential of the aligned dot. △ Less

Submitted 2 July, 2004; originally announced July 2004.

Comments: 6 pages, 5 figures, submitted to Phys. Rev. B

Spin-blockade spectroscopy of a two-level artificial molecule

Authors: M. Pioro-Ladriere, M. Ciorga, J. Lapointe, P. Zawadzki, M. Korkusinski, P. Hawrylak, A. S. Sachrajda

Abstract: Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states… ▽ More Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior. △ Less

Submitted 29 May, 2003; v1 submitted 20 January, 2003; originally announced January 2003.

Comments: 4 pages, 4 figures; revised version with a minor change in Fig.2 and additional inset in Fig.3.;accepted by PRL

Metallic and Insulating behaviour in p-SiGe at nu = 3/2

Authors: P. T. Coleridge, R. L. Williams, J. Lapointe, P. Zawadzki

Abstract: Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the… ▽ More Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the insulating phase, indicates it is not a re-entrant Hall insulator. The behaviour is explained in terms of the strong exchange interactions. At integer filling factors these cause the 0 uparrow and 1 downarrow Landau levels to cross and be well separated but at non-integer values of nu screening reduces exchange effects and causes the levels to stick together. It is suggested the insulating behaviour, and high field metal/insulator transition, is a consequence of the strong exchange interactions. △ Less

Submitted 16 August, 2002; originally announced August 2002.

Comments: Presented at SEMIMAG15 - 15th International Conference on High Magnetic fields in Semiconductor Physics Oxford August 2002

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

Authors: M. R. Sakr, Maryam Rahimi, S. V. Kravchenko, P. T. Coleridge, R. L. Williams, J. Lapointe

Abstract: We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect… ▽ More We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character. △ Less

Submitted 9 July, 2001; originally announced July 2001.

Journal ref: Phys. Rev. B 64, 161308(R) (2001)