Single-electron tunneling PbS/InP neuromorphic computing building blocks
Authors:
Paulo F. Jarschel,
** H. Kim,
Louis Biadala,
Maxime Berthe,
Yannick Lambert,
Richard M. Osgood,
Gilles Patriarche,
Bruno Grandidier,
Jimmy Xu
Abstract:
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights int…
▽ More
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of experimental data in the SET framework. The estimated minimum energy required for a synaptic operation is in the order of 1 fJ, while the maximum frequency of operation can reach the MHz range.
△ Less
Submitted 22 August, 2019;
originally announced August 2019.
Optical absorption of silicon nanowires
Authors:
Tao Xu,
Yannick Lambert,
Christophe Krzeminski,
Bruno Grandidier,
Didier Stiévenard,
Gaëtan Lévêque,
Abdellatif Akjouj,
Yan Pennec,
Bahram Djafari-Rouhani
Abstract:
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on…
▽ More
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the Finite Difference Time Domain (FDTD) method is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies, that allows to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.
△ Less
Submitted 17 September, 2012;
originally announced September 2012.
