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High-speed metamagnetic resistive switching of FeRh through Joule heating
Authors:
Nicholas A. Blumenschein,
Gregory M. Stephen,
Cory D. Cress,
Samuel W. LaGasse,
Aubrey T. Hanbicki,
Steven P. Bennett,
Adam L. Friedman
Abstract:
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the transition via Joule heating in FeRh wires. Finite element simulations based on abrupt state transition within…
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Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the transition via Joule heating in FeRh wires. Finite element simulations based on abrupt state transition within each domain result in a globally smooth transition that agrees with the experimental findings and provides insight into the thermodynamics involved. We measure a 150 K decrease in transition temperature with currents up to 60 mA, limited only by the dimensions of the device. The sizeable shift in transition temperature scales with current density and wire length, suggesting the absolute resistance and heat dissipation of the substrate are also important. The FeRh phase change is evaluated by pulsed I-V using a variety of bias conditions. We demonstrate high speed (~ ns) memristor-like behavior and report device performance parameters such as switching speed and power consumption that compare favorably with state-of-the-art phase change memristive technologies.
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Submitted 3 August, 2022;
originally announced August 2022.
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Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene
Authors:
Jesse Balgley,
Jackson Butler,
Sananda Biswas,
Zhehao Ge,
Samuel Lagasse,
Takashi Taniguchi,
Kenji Watanabe,
Matthew Cothrine,
David G. Mandrus,
Jairo Velasco Jr.,
Roser Valentí,
Erik A. Henriksen
Abstract:
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ acro…
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We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-do** of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.
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Submitted 31 May, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe$_2$ heterojunctions
Authors:
Samuel W. LaGasse,
Prathamesh Dhakras,
Takashi Taniguchi,
Kenji Watanabe,
Ji Ung Lee
Abstract:
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) Schottky junction which exhibits ideal diode characteristics and a complete lack of…
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Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) Schottky junction which exhibits ideal diode characteristics and a complete lack of Fermi-level pinning. The Schottky barrier height of the device is rigidly tuned by electrostatic gating of the WSe$_2$, enabling experimental verification of the Schottky-Mott limit in a single device. Utilizing this exceptional gate control, we realize a super-ideal gated-Schottky diode which surpasses the ideal diode limit. Our results provide a pathway for defect-free electrical contact to two-dimensional semiconductors and open up possibilities for circuits with efficient switching characteristics and higher efficiency optoelectronic devices.
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Submitted 6 November, 2018;
originally announced November 2018.
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Understanding magnetic focusing in graphene $p$-$n$ junctions through quantum modeling
Authors:
Samuel W LaGasse,
Ji Ung Lee
Abstract:
We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene $p$-$n$ junctions. Spatially resolved flow maps of local particle current density show quantum interference and $p$-$n$ junction filtering effects which are crucial to explaining the device operation. The Landauer-Büttiker formula is used alongside dephasing edge contacts…
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We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene $p$-$n$ junctions. Spatially resolved flow maps of local particle current density show quantum interference and $p$-$n$ junction filtering effects which are crucial to explaining the device operation. The Landauer-Büttiker formula is used alongside dephasing edge contacts to give exceptional agreement between simulated non-local resistance and the recent experiment by Chen $\textit{et al}$ ($\textit{Science}$, 2016). The origin of positive and negative focusing resonances and off resonance characteristics are explained in terms of quantum transmission functions. Our model also captures subtle features from experiment, such as the previously unexplained $p$-$p^-$ to $p$-$p^+$ transition and the second $p$-$n$ focusing resonance.
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Submitted 16 December, 2016;
originally announced December 2016.
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Theory of Landau level mixing in heavily graded graphene p-n junctions
Authors:
Samuel W LaGasse,
Ji Ung Lee
Abstract:
We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve…
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We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve carrier transport in the device, for the first time, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.
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Submitted 2 August, 2016;
originally announced August 2016.
