Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier do**
Authors:
Ekaterina Khestanova,
Tatyana Ivanova,
Roland Gillen,
Alessandro D Elia,
Oliver Nicholas Gallego Lacey,
Lena Wysocki,
Alexander Gruneis,
Vasily Kravtsov,
Wlodek Strupinski,
Janina Maultzsch,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Jose Avila,
Pavel Dudin,
Boris V. Senkovskiy
Abstract:
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the…
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Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical do** by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron do** and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge do** opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.
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Submitted 5 April, 2023;
originally announced April 2023.
