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Mean dimension explosion of induced homeomorphisms
Authors:
Gabriel Lacerda,
Sergio Romaña
Abstract:
Given $X$ a compact metric space and $T: X \to X$ a continuous map, the induced hyperspace map $T_\mathcal{K}$ acts on the hyperspace $\mathcal{K}(X)$ of closed and nonempty subsets of $X$, and on the continuum hyperspace $\mathcal{C}(X) \subset \mathcal{K}(X)$ of connected sets. This work studies the mean dimension explosion phenomenon: when the base system $T$ has zero topological entropy, but t…
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Given $X$ a compact metric space and $T: X \to X$ a continuous map, the induced hyperspace map $T_\mathcal{K}$ acts on the hyperspace $\mathcal{K}(X)$ of closed and nonempty subsets of $X$, and on the continuum hyperspace $\mathcal{C}(X) \subset \mathcal{K}(X)$ of connected sets. This work studies the mean dimension explosion phenomenon: when the base system $T$ has zero topological entropy, but the mean dimension of the induced map $T_\mathcal{K}$ is infinite. In particular, this phenomenon is attained for Morse-Smale diffeomorphisms. Furthermore, for a circle homeomorphism $H$, the mean dimension explosion does not occur if, and only if, $H$ is conjugated to a rotation. Finally, if the topological entropy of $T$ is positive, then the metric mean dimension of $T_\mathcal{K}$ is infinite.
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Submitted 11 April, 2024;
originally announced April 2024.
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Typical conservative homeomorphisms have total metric mean dimension
Authors:
Gabriel Lacerda,
Sergio Romaña
Abstract:
Given a compact smooth boundaryless manifold with dimension greater than one endowed with a locally positive non-atomic measure $μ$, we prove that typical $μ$-preserving homeomorphisms have upper metric mean dimension, with respect to the Riemannian distance, equal to the dimension of the manifold. Moreover, we prove that $μ$ is a measure of maximal metric mean dimension, with respect to the varia…
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Given a compact smooth boundaryless manifold with dimension greater than one endowed with a locally positive non-atomic measure $μ$, we prove that typical $μ$-preserving homeomorphisms have upper metric mean dimension, with respect to the Riemannian distance, equal to the dimension of the manifold. Moreover, we prove that $μ$ is a measure of maximal metric mean dimension, with respect to the variational principle established in [VV17].
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Submitted 6 November, 2023;
originally announced November 2023.
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A Machine Learning Approach for DeepFake Detection
Authors:
Gustavo Cunha Lacerda,
Raimundo Claudio da Silva Vasconcelos
Abstract:
With the spread of DeepFake techniques, this technology has become quite accessible and good enough that there is concern about its malicious use. Faced with this problem, detecting forged faces is of utmost importance to ensure security and avoid socio-political problems, both on a global and private scale. This paper presents a solution for the detection of DeepFakes using convolution neural net…
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With the spread of DeepFake techniques, this technology has become quite accessible and good enough that there is concern about its malicious use. Faced with this problem, detecting forged faces is of utmost importance to ensure security and avoid socio-political problems, both on a global and private scale. This paper presents a solution for the detection of DeepFakes using convolution neural networks and a dataset developed for this purpose - Celeb-DF. The results show that, with an overall accuracy of 95% in the classification of these images, the proposed model is close to what exists in the state of the art with the possibility of adjustment for better results in the manipulation techniques that arise in the future.
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Submitted 27 September, 2022;
originally announced September 2022.
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A unified framework for dataset shift diagnostics
Authors:
Felipe Maia Polo,
Rafael Izbicki,
Evanildo Gomes Lacerda Jr,
Juan Pablo Ibieta-Jimenez,
Renato Vicente
Abstract:
Supervised learning techniques typically assume training data originates from the target population. Yet, in reality, dataset shift frequently arises, which, if not adequately taken into account, may decrease the performance of their predictors. In this work, we propose a novel and flexible framework called DetectShift that quantifies and tests for multiple dataset shifts, encompassing shifts in t…
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Supervised learning techniques typically assume training data originates from the target population. Yet, in reality, dataset shift frequently arises, which, if not adequately taken into account, may decrease the performance of their predictors. In this work, we propose a novel and flexible framework called DetectShift that quantifies and tests for multiple dataset shifts, encompassing shifts in the distributions of $(X, Y)$, $X$, $Y$, $X|Y$, and $Y|X$. DetectShift equips practitioners with insights into data shifts, facilitating the adaptation or retraining of predictors using both source and target data. This proves extremely valuable when labeled samples in the target domain are limited. The framework utilizes test statistics with the same nature to quantify the magnitude of the various shifts, making results more interpretable. It is versatile, suitable for regression and classification tasks, and accommodates diverse data forms - tabular, text, or image. Experimental results demonstrate the effectiveness of DetectShift in detecting dataset shifts even in higher dimensions.
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Submitted 12 September, 2023; v1 submitted 17 May, 2022;
originally announced May 2022.
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Smart Proofs via Smart Contracts: Succinct and Informative Mathematical Derivations via Decentralized Markets
Authors:
Sylvain Carré,
Franck Gabriel,
Clément Hongler,
Gustavo Lacerda,
Gloria Capano
Abstract:
Modern mathematics is built on the idea that proofs should be translatable into formal proofs, whose validity is an objective question, decidable by a computer. Yet, in practice, proofs are informal and may omit many details. An agent considers a proof valid if they trust that it could be expanded into a machine-verifiable proof. A proof's validity can thus become a subjective matter and lead to a…
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Modern mathematics is built on the idea that proofs should be translatable into formal proofs, whose validity is an objective question, decidable by a computer. Yet, in practice, proofs are informal and may omit many details. An agent considers a proof valid if they trust that it could be expanded into a machine-verifiable proof. A proof's validity can thus become a subjective matter and lead to a debate, which may be difficult to settle. Hence, while the concept of valid proof is well-defined, the process to establish validity is itself a complex multi-agent problem.
We introduce the SPRIG protocol. SPRIG allows agents to propose and verify succinct and informative proofs in a decentralized fashion; the trust is established by agents being able to request more details in the proof steps; debates, if they arise, must isolate details of proofs and, if they persist, go down to machine-level details, where they are automatically settled. A structure of bounties and stakes is set to incentivize agents to act in good faith.
We propose a game-theoretic discussion of SPRIG, showing how agents with various types of information interact, leading to a proof tree with an appropriate level of detail and to the invalidation of wrong proofs, and we discuss resilience against various attacks. We then analyze a simplified model, characterize its equilibria and compute the agents' level of trust.
SPRIG is designed to run as a smart contract on a blockchain platform. This allows anonymous agents to participate in the verification debate, and to contribute with their information. The smart contract mediates the interactions, settles debates, and guarantees that bounties and stakes are paid as specified.
SPRIG enables new applications, such as the issuance of bounties for open problems, and the creation of derivatives markets, allowing agents to inject more information pertaining to proofs.
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Submitted 13 October, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
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DR-Tools: a suite of lightweight open-source tools to measure and visualize Java source code
Authors:
Guilherme Lacerda,
Fabio Petrillo,
Marcelo Pimenta
Abstract:
In Software Engineering, some of the most critical activities are maintenance and evolution. However, to perform both with quality, minimizing impacts and risks, developers need to analyze and identify where the main problems come from previously. In this paper, we introduce DR-Tools Suite, a set of lightweight open-source tools that analyze and calculate source code metrics, allowing developers t…
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In Software Engineering, some of the most critical activities are maintenance and evolution. However, to perform both with quality, minimizing impacts and risks, developers need to analyze and identify where the main problems come from previously. In this paper, we introduce DR-Tools Suite, a set of lightweight open-source tools that analyze and calculate source code metrics, allowing developers to visualize the results in different formats and graphs. Also, we define a set of heuristics to help the code analysis. We conducted two case studies (one academic and one industrial) to collect feedback on the tools suite, on how we will evolve the tools, as well as insights to develop new tools that support developers in their daily work.
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Submitted 8 August, 2020;
originally announced August 2020.
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Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors
Authors:
Andreij C. Gadelha,
Alisson R. Cadore,
Kenji Watanabe,
Takashi Tanigushi,
Ana M. de Paula,
Leandro M. Malard,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on…
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Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodo** is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodo**, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
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Submitted 17 June, 2020;
originally announced June 2020.
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Local photodo** in monolayer MoS2
Authors:
Andreij C. Gadelha,
Alisson R. Cadore,
Lucas Lafeta,
Ana M. de Paula,
Leandro M. Malard,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Inducing electrostatic do** in 2D materials by laser exposure (photodo** effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodo** in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodo** modulates the photo…
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Inducing electrostatic do** in 2D materials by laser exposure (photodo** effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodo** in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodo** modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodo** fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodo** generation. Our work gives a step forward to the understanding of the photodo** effect in MoS2 transistors and the implementation of such an effect in integrated devices.
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Submitted 16 June, 2020;
originally announced June 2020.
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Code Smells and Refactoring: A Tertiary Systematic Review of Challenges and Observations
Authors:
Guilherme Lacerda,
Fabio Petrillo,
Marcelo Pimenta,
Yann Gael Gueheneuc
Abstract:
In this paper, we present a tertiary systematic literature review of previous surveys, secondary systematic literature reviews, and systematic map**s. We identify the main observations (what we know) and challenges (what we do not know) on code smells and refactoring. We show that code smells and refactoring have a strong relationship with quality attributes, i.e., with understandability, mainta…
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In this paper, we present a tertiary systematic literature review of previous surveys, secondary systematic literature reviews, and systematic map**s. We identify the main observations (what we know) and challenges (what we do not know) on code smells and refactoring. We show that code smells and refactoring have a strong relationship with quality attributes, i.e., with understandability, maintainability, testability, complexity, functionality, and reusability. We argue that code smells and refactoring could be considered as the two faces of a same coin. Besides, we identify how refactoring affects quality attributes, more than code smells. We also discuss the implications of this work for practitioners, researchers, and instructors. We identify 13 open issues that could guide future research work. Thus, we want to highlight the gap between code smells and refactoring in the current state of software-engineering research. We wish that this work could help the software-engineering research community in collaborating on future work on code smells and refactoring.
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Submitted 22 April, 2020;
originally announced April 2020.
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Probing the Electronic Properties of Monolayer MoS$_2$ via Interaction with Molecular Hydrogen
Authors:
Natália P. Rezende,
Alisson R. Cadore,
Andreij C. Gadelha,
Cíntia L. Pereira,
Vinicius Ornelas,
Kenji Watanabe,
Takashi Taniguchi,
André S. Ferlauto,
Ângelo Malachias,
Leonardo C. Campos,
Rodrigo G. Lacerda
Abstract:
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors base…
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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors based on MoS$_2$ FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS$_2$ monotonically increases as a function of the H$_2$ concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H$_2$ adsorption driven by interaction with sulfur vacancies in the MoS$_2$ surface (VS). This description is in agreement with related density functional theory studies about H$_2$ adsorption on MoS$_2$. Finally, measurements on partially defect-passivated MoS$_2$ FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H$_2$ interaction with the MoS$_2$. These findings provide insights for futures applications in catalytic process between monolayer MoS$_2$ and H$_2$ and also introduce MoS$_2$ FETs as promising H$_2$ sensors.
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Submitted 4 March, 2020;
originally announced March 2020.
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Reversible do** of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
Authors:
C. L. Pereira,
A. R. Cadore,
N. P. Rezende,
A. Gadelha,
E. A. Soares,
H. Chacham,
L. C. Campos,
R. G. Lacerda
Abstract:
In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local do** of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing t…
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In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local do** of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on an asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such situation, the devices show a second charge neutrality point in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.
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Submitted 4 March, 2020;
originally announced March 2020.
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Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures
Authors:
J. B. S. Mendes,
O. Alves Santos,
T. Chagas,
R. Magalhães-Paniago,
T. J. A. Mori,
J. Holanda,
L. M. Meireles,
R. G. Lacerda,
A. Azevedo,
S. M. Rezende
Abstract:
This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray ab…
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This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD) techniques, we show that the carbon atoms of the SLG acquires an induced magnetic moment due to the proximity effect with the magnetic layer. The spin currents are generated in the magnetic layer by spin pum** from microwave driven ferromagnetic resonance and are detected by a dc voltage along the graphene layer, at room temperature. The spin-to-charge current conversion, occurring at the graphene layer, is explained by the extrinsic spin-orbit interaction (SOI) induced by the proximity effect with the ferromagnetic layer. The results obtained for the SLG/YIG and SLG/Py systems confirm very similar values for the IREE parameter, which are larger than the values reported in previous studies for SLG. We also report systematic investigations of the electronic and magnetic properties of the SLG/YIG by means of scanning tunneling microscopy (STM).
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Submitted 2 December, 2018;
originally announced December 2018.
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Applying Faster R-CNN for Object Detection on Malaria Images
Authors:
Jane Hung,
Deepali Ravel,
Stefanie C. P. Lopes,
Gabriel Rangel,
Odailton Amaral Nery,
Benoit Malleret,
Francois Nosten,
Marcus V. G. Lacerda,
Marcelo U. Ferreira,
Laurent Rénia,
Manoj T. Duraisingh,
Fabio T. M. Costa,
Matthias Marti,
Anne E. Carpenter
Abstract:
Deep learning based models have had great success in object detection, but the state of the art models have not yet been widely applied to biological image data. We apply for the first time an object detection model previously used on natural images to identify cells and recognize their stages in brightfield microscopy images of malaria-infected blood. Many micro-organisms like malaria parasites a…
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Deep learning based models have had great success in object detection, but the state of the art models have not yet been widely applied to biological image data. We apply for the first time an object detection model previously used on natural images to identify cells and recognize their stages in brightfield microscopy images of malaria-infected blood. Many micro-organisms like malaria parasites are still studied by expert manual inspection and hand counting. This type of object detection task is challenging due to factors like variations in cell shape, density, and color, and uncertainty of some cell classes. In addition, annotated data useful for training is scarce, and the class distribution is inherently highly imbalanced due to the dominance of uninfected red blood cells. We use Faster Region-based Convolutional Neural Network (Faster R-CNN), one of the top performing object detection models in recent years, pre-trained on ImageNet but fine tuned with our data, and compare it to a baseline, which is based on a traditional approach consisting of cell segmentation, extraction of several single-cell features, and classification using random forests. To conduct our initial study, we collect and label a dataset of 1300 fields of view consisting of around 100,000 individual cells. We demonstrate that Faster R-CNN outperforms our baseline and put the results in context of human performance.
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Submitted 11 March, 2019; v1 submitted 25 April, 2018;
originally announced April 2018.
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Enhancing the response of NH3 graphene-sensors by using devices with different graphene-substrate distances
Authors:
A. R. Cadore,
E. Mania,
A. B. Alencar,
N. P. Rezende,
S. de Oliveira,
K. Watanabe,
T. Taniguchi,
H. Chacham,
L. C. Campos,
R. G. Lacerda
Abstract:
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has not yet been entirely established. To provide further insight on the interaction between ammonia molecules (NH3) and graphene devices, we report expe…
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Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has not yet been entirely established. To provide further insight on the interaction between ammonia molecules (NH3) and graphene devices, we report experimental and theoretical studies of NH3 graphene sensors with graphene supported on three substrates: SiO2, talc and hexagonal boron nitride (hBN). Our results indicate that the charge transfer from NH3 to graphene depends not only on extrinsic parameters like temperature and gas concentration, but also on the average distance between the graphene sheet and the substrate. We find that the average distance between graphene and hBN crystals is the smallest among the three substrates, and that graphene-ammonia gas sensors based on a G/hBN heterostructure exhibit the fastest recovery times for NH3 exposure and are slightly affected by wet or dry air environment. Moreover, the dependence of graphene-ammonia sensors on different substrates indicates that graphene sensors exhibit two different adsorption processes for NH3 molecules: one at the top of the graphene surface and another at its bottom side close to the substrate. Therefore, our findings show that substrate engineering is crucial to the development of graphene-based gas sensors and indicate additional routes for faster sensors.
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Submitted 27 March, 2018;
originally announced March 2018.
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Tuning the pn junction at a metal-graphene interface via H2 exposure
Authors:
Alisson R. Cadore,
Edrian Mania,
Evandro A. Morais,
Kenji Watanabe,
Takashi Taniguchi,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode induces a pn junction in graphene, leading to an asymmetrical resistance between the charge carriers (electron and hole). This asymmetry is well modeled by consideri…
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Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode induces a pn junction in graphene, leading to an asymmetrical resistance between the charge carriers (electron and hole). This asymmetry is well modeled by considering the preferential charge scattering at the pn junction, and we show that it can be modulated in a reversible, selective and asymmetrical manner by exposing H2 to the metal-graphene interface. Our results are valuable for understanding the nature of the metal-graphene interfaces and demonstrate a novel route towards hydrogen sensor application. KEYWORDS: graphene, contact resistance,
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Submitted 30 April, 2017; v1 submitted 15 March, 2016;
originally announced March 2016.
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Thermo Activated Hysteresis on High Quality Graphene/h-BN Devices
Authors:
A. R. Cadore,
E. Mania,
K. Watanabe,
T. Taniguchi,
R. G. Lacerda,
L. C. Campos
Abstract:
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origin of the hysteretic phenomenon, we design heterostructures involving graphene/h-BN devices with different underlying substrates such as: SiO2/Si and g…
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We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origin of the hysteretic phenomenon, we design heterostructures involving graphene/h-BN devices with different underlying substrates such as: SiO2/Si and graphite; where heavily doped silicon and graphite are used as a back gate electrodes, respectively. The gate hysteretic behavior of the resistance shows to be present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. Finally, we suggest a phenomenological model, which captures all of our findings based on charges trapped at the h-BN/SiO2. Certainly, such hysteretic behavior in graphene resistance represents a technological problem for the application of graphene devices at high temperatures, but conversely, it can open new routes for applications on digital electronics and graphene memory devices.
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Submitted 15 March, 2016;
originally announced March 2016.
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Dam** of Landau levels in neutral graphene at low magnetic fields: A phonon Raman scattering study
Authors:
F. M. Ardito,
T. G. Mendes-de-Sa,
A. R. Cadore,
P. F. Gomes,
D. L. Mafra,
I. D. Barcelos,
R. G. Lacerda,
F. Iikawa,
E. Granado
Abstract:
Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition wid…
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Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition widths were estimated through a quantitative analysis of the magnetophonon resonances associated with optically active Landau level transitions crossing the energy of the E_2g Raman-active phonon. Contrary to multilayer graphene, the single-layer graphene samples show a strong dam** of the low-field resonances, consistent with an additional broadening contribution of the Landau level energies arising from a random strain field. This extra contribution is properly quantified in terms of a pseudomagnetic field distribution Delta_B = 1.0-1.7 T in our single-layer samples.
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Submitted 16 January, 2018; v1 submitted 11 January, 2016;
originally announced January 2016.
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Upper-Bounding Proof Length with the Busy Beaver
Authors:
Gustavo Lacerda
Abstract:
Consider a short theorem, i.e. one that can be written down using just a few symbols. Can its shortest proof be arbitrarily long? We answer this question in the negative. Inspired by arguments by Calude et al (1999) and Chaitin (1984) that construct an upper bound on the first counterexample of a $Π_1$ sentence as a function of the sentence's length, we present a similar argument about proof lengt…
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Consider a short theorem, i.e. one that can be written down using just a few symbols. Can its shortest proof be arbitrarily long? We answer this question in the negative. Inspired by arguments by Calude et al (1999) and Chaitin (1984) that construct an upper bound on the first counterexample of a $Π_1$ sentence as a function of the sentence's length, we present a similar argument about proof length for arbitrary statements. As with the above, our bound is uncomputable, since it uses a Busy Beaver oracle. Unlike the above, our result is not restricted to any complexity class. Finally, we combine the above search procedures into an automatic (albeit uncomputable) procedure for discovering Gödel sentences.
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Submitted 6 June, 2014;
originally announced June 2014.
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Observation of strain-free rolled-up CVD graphene single layers: towards unstrained heterostructures
Authors:
Ingrid D. Barcelos,
Luciano G. Moura,
Rodrigo G. Lacerda,
Angelo Malachias
Abstract:
Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor heterojunctions on a radial superlattice. Using elasticity theory and Raman spectroscopy we show that it is possible to produce homogeneously curved graphene with curvature r…
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Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor heterojunctions on a radial superlattice. Using elasticity theory and Raman spectroscopy we show that it is possible to produce homogeneously curved graphene with curvature radius on the 600nm-1200nm range. Additionally, the study of tubular structures also allows the extraction of values for the elastic constants of graphene that are in excellent agreement with elastic constants found in the literature. However, our process has the advantage of leading to a well-defined and nonlocal curvature. Since our curvature radius lie in a range between the large radius studied using mechanical bending and the reduced radius induced by Atomic Force Microscopy experiments we can figure out whether bending effects can be a majoritary driving force for modifications in graphene electronic status. From the results described in this work one can assume that curvature effects solely do not modify the Raman signature of graphene and that strain phenomena observed previously can be ascribed to stretching due to the formation of local atomic bonds. This implies that the interactions of graphene with additional materials on heterostructures must be investigated in detail prior to the development of applications and devices.
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Submitted 8 May, 2014;
originally announced May 2014.
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Classical leakage resilience from fault-tolerant quantum computation
Authors:
Felipe G. Lacerda,
Joseph M. Renes,
Renato Renner
Abstract:
Physical implementations of cryptographic algorithms leak information, which makes them vulnerable to so-called side-channel attacks. The problem of secure computation in the presence of leakage is generally known as leakage resilience. In this work, we establish a connection between leakage resilience and fault-tolerant quantum computation. We first prove that for a general leakage model, there e…
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Physical implementations of cryptographic algorithms leak information, which makes them vulnerable to so-called side-channel attacks. The problem of secure computation in the presence of leakage is generally known as leakage resilience. In this work, we establish a connection between leakage resilience and fault-tolerant quantum computation. We first prove that for a general leakage model, there exists a corresponding noise model in which fault tolerance implies leakage resilience. Then we show how to use constructions for fault-tolerant quantum computation to implement classical circuits that are secure in specific leakage models.
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Submitted 29 April, 2014;
originally announced April 2014.
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ZnO UV photodetector with controllable quality factor and photosensitivity
Authors:
Leonardo C. Campos,
Marcos H. D. Guimaraes,
Alem-Mar B. Goncalves,
Sergio de Oliveira,
Rodrigo G. Lacerda
Abstract:
ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating t…
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ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.
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Submitted 5 February, 2013;
originally announced February 2013.
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Discovering Cyclic Causal Models by Independent Components Analysis
Authors:
Gustavo Lacerda,
Peter L. Spirtes,
Joseph Ramsey,
Patrik O. Hoyer
Abstract:
We generalize Shimizu et al's (2006) ICA-based approach for discovering linear non-Gaussian acyclic (LiNGAM) Structural Equation Models (SEMs) from causally sufficient, continuous-valued observational data. By relaxing the assumption that the generating SEM's graph is acyclic, we solve the more general problem of linear non-Gaussian (LiNG) SEM discovery. LiNG discovery algorithms output the distri…
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We generalize Shimizu et al's (2006) ICA-based approach for discovering linear non-Gaussian acyclic (LiNGAM) Structural Equation Models (SEMs) from causally sufficient, continuous-valued observational data. By relaxing the assumption that the generating SEM's graph is acyclic, we solve the more general problem of linear non-Gaussian (LiNG) SEM discovery. LiNG discovery algorithms output the distribution equivalence class of SEMs which, in the large sample limit, represents the population distribution. We apply a LiNG discovery algorithm to simulated data. Finally, we give sufficient conditions under which only one of the SEMs in the output class is 'stable'.
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Submitted 13 June, 2012;
originally announced June 2012.
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Causal discovery of linear acyclic models with arbitrary distributions
Authors:
Patrik O. Hoyer,
Aapo Hyvarinen,
Richard Scheines,
Peter L. Spirtes,
Joseph Ramsey,
Gustavo Lacerda,
Shohei Shimizu
Abstract:
An important task in data analysis is the discovery of causal relationships between observed variables. For continuous-valued data, linear acyclic causal models are commonly used to model the data-generating process, and the inference of such models is a well-studied problem. However, existing methods have significant limitations. Methods based on conditional independencies (Spirtes et al. 1993; P…
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An important task in data analysis is the discovery of causal relationships between observed variables. For continuous-valued data, linear acyclic causal models are commonly used to model the data-generating process, and the inference of such models is a well-studied problem. However, existing methods have significant limitations. Methods based on conditional independencies (Spirtes et al. 1993; Pearl 2000) cannot distinguish between independence-equivalent models, whereas approaches purely based on Independent Component Analysis (Shimizu et al. 2006) are inapplicable to data which is partially Gaussian. In this paper, we generalize and combine the two approaches, to yield a method able to learn the model structure in many cases for which the previous methods provide answers that are either incorrect or are not as informative as possible. We give exact graphical conditions for when two distinct models represent the same family of distributions, and empirically demonstrate the power of our method through thorough simulations.
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Submitted 13 June, 2012;
originally announced June 2012.
