Showing 1–29 of 29 results for author: La Magna, A

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation

Authors: Damiano Ricciarelli, Jonas Müller, Guilhem Larrieu, Ioannis Deretzis, Gaetano Calogero, Enrico Martello, Giuseppe Fisicaro, Jean-Michel Hartmann, Sébastien Kerdilès, Mathieu Opprecht, Antonio Massimiliano Mio, Richard Daubriac, Fuccio Cristiano, Antonino La Magna

Abstract: Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decade… ▽ More Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution. △ Less

Submitted 6 May, 2024; v1 submitted 18 March, 2024; originally announced March 2024.

Rydberg atomtronic devices

Authors: Philip Kitson, Tobias Haug, Antonino La Magna, Oliver Morsch, Luigi Amico

Abstract: Networks of Rydberg atoms provide a powerful basis for quantum simulators and quantum technologies. Inspired by matter-wave atomtronics, here we engineer switches, diodes and universal logic gates. Our schemes control the Rydberg excitation dynamics via the anti-blockade or facilitation mechanism, allowing for much faster devices compared to cold atom systems. Our approach is robust to noise and c… ▽ More Networks of Rydberg atoms provide a powerful basis for quantum simulators and quantum technologies. Inspired by matter-wave atomtronics, here we engineer switches, diodes and universal logic gates. Our schemes control the Rydberg excitation dynamics via the anti-blockade or facilitation mechanism, allowing for much faster devices compared to cold atom systems. Our approach is robust to noise and can be applied to individually trapped atoms and extensive three-dimensional gases. In analogy to electronics, Rydberg atomtronic devices promise to enhance quantum information processors and quantum simulators. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys

Authors: Damiano Ricciarelli, Ioannis Deretzis, Gaetano Calogero, Giuseppe Fisicaro, Enrico Martello, Antonino La Magna

Abstract: The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the dielectric functions occurs with the reflectivity of liquid Si-Ge reaching a maximum at 50\% Ge content, being 10\% higher than in pure Si or Ge. Using \textit{ab initio} methodologies, we modelled liquefied Si-Ge alloys, unv… ▽ More The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the dielectric functions occurs with the reflectivity of liquid Si-Ge reaching a maximum at 50\% Ge content, being 10\% higher than in pure Si or Ge. Using \textit{ab initio} methodologies, we modelled liquefied Si-Ge alloys, unveiling very high coordination numbers and poor symmetry in the first coordination shell with respect to Si and Ge, related to different bonding properties. We simulated optical functions, quantitatively replicating the aforementioned reflectivity trend and we highlighted a direct relationship between atomic structure and optical properties, indicating that the unusual optics arises from Si-Ge higher local coordination characterized by low symmetry. We forecast further implications for the overall class of these alloys. These findings expand our comprehension of liquefied semiconductors and are essential for implementing controlled laser melting procedures to highly dope these materials for advanced transistors, superconductors, sensors and plasmonic devices. △ Less

Submitted 5 February, 2024; v1 submitted 26 October, 2023; originally announced October 2023.

Journal ref: J. Phys. Chem. C 2024

Atomistic insights into ultrafast SiGe nanoprocessing

Authors: Gaetano Calogero, Domenica Raciti, Damiano Ricciarelli, Pablo Acosta-Alba, Fuccio Cristiano, Richard Daubriac, Remi Demoulin, Ioannis Deretzis, Giuseppe Fisicaro, Jean-Michel Hartmann, Sébastien Kerdilès, Antonino La Magna

Abstract: Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the hi… ▽ More Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$

Authors: E. Schilirò, S. E. Panasci, A. M. Mio, G. Nicotra, S. Agnello, B. Pecz, G. Z. Radnoczi, I. Deretzis, A. La Magna, F. Roccaforte, R. Lo Nigro, F. Giannazzo

Abstract: In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal… ▽ More In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal $MoS_{2}$ membrane with the Au topography and the occurrence of strain variations at the nanoscale. Ab-initio DFT calculations of $MoS_{2}$/Au(111) interface showed a significant influence of the Au substrate on the $MoS_{2}$ energy band structure, whereas small differences were accounted for the adsorption of the $H_{2}O$, TMA and TDMAHf precursors. This suggests a crucial role of nanoscale morphological effects, such as local curvature and strain of the $MoS_{2}$ membrane, in the enhanced physisorption of the precursors. Therefore, the nucleation and growth of $Al_{2}O_{3}$ and $HfO_{2}$ films onto 1L-$MoS_{2}$/Au was investigated, by monitoring the surface coverage as a function of the number (N) of ALD cycles, with N from 10 to 120. At low N values, a slower growth rate of the initially formed nuclei was observed for $HfO_{2}$, probably due to the bulky nature of the TDMAHf precursor as compared to TMA. On the other hand, the formation of continuous films was obtained in both cases for N>80 ALD cycles, corresponding to 3.6 nm $Al_{2}O_{3}$ and 3.1 nm $HfO_{2}$. Current map** by C-AFM showed, for the same applied bias, a uniform insulating behavior of $Al_{2}O_{3}$ and the occurrence of few localized breakdown spots in the case of $HfO_{2}$, associated to less compact films regions. Finally, an increase of the 1L-$MoS_{2}$ tensile strain was observed by Raman map** after encapsulation with both high-k films, accompanied by a reduction in the PL intensity. △ Less

Submitted 13 May, 2023; originally announced May 2023.

Comments: 26 pages, 9 figures

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Authors: Damiano Ricciarelli, Giovanni Mannino, Ioannis Deretzis, Gaetano Calogero, Giuseppe Fisicaro, Richard Daubriac, Remi Demoulin, Fuccio Cristiano, Pawel P. Michalowski, Pablo Acosta-Alba, Jean-Michel Hartmann, Sébastien Kerdilès, Antonino La Magna

Abstract: Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes an… ▽ More Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium. △ Less

Submitted 8 September, 2023; v1 submitted 28 March, 2023; originally announced March 2023.

Journal ref: Mat. Sci. Semicond. Proc. 165 (2023) 10765

Decoherence analysis of silicon vacancies in 3C-SiC

Authors: Tommaso Fazio, Giuseppe Fisicaro, Ioannis Deretzis, Elisabetta Paladino, Antonino La Magna

Abstract: We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge s… ▽ More We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge state of the silicon vacancy as the most favorable for p doped 3C SiC systems. We thereon evaluate the Free Induction Decay and the Hahn echo sequence on the electron spin interacting with the nuclear spin bath. Here, the Electron Spin Echo Envelope Modulation phenomenon, due to single nuclear spin flip** processes, and the overall decay are highlighted in the context of the Cluster Correlation Expansion theory. We find a non exponential coherence decay, which is a typical feature of solid state qubits subjected to low frequency 1/f noise from the environment. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Comments: 36 pages, 10 figures, 3 tables

Comparing different solutions for testing resistive defects in low-power SRAMs

Authors: Nunzio Mirabella, Michelangelo Grosso, Giovanna Franchino, Salvatore Rinaudo, Ioannis Deretzis, Antonino La Magna, Matteo Sonza Reorda

Abstract: Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March a… ▽ More Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time. △ Less

Submitted 30 December, 2021; originally announced December 2021.

Comments: Paper accepted and presented in The 22nd IEEE Latin-American Test Symposium (LATS 2021) October 27 - 29, 2021, Brazil. It is going to be published in the IEEExplorer. 6 pages, 7 figures, 3 tables

Design and characterization of effective solar cells

Authors: Varun Ojha, Giorgio Jansen, Andrea Patane, Antonino La Magna, Vittorio Romano, Giuseppe Nicosia

Abstract: We propose a two-stage multi-objective optimization framework for full scheme solar cell structure design and characterization, cost minimization and quantum efficiency maximization. We evaluated structures of 15 different cell designs simulated by varying material types and photodiode do** strategies. At first, non-dominated sorting genetic algorithm~II (NSGA-II) produced Pareto-optimal-solutio… ▽ More We propose a two-stage multi-objective optimization framework for full scheme solar cell structure design and characterization, cost minimization and quantum efficiency maximization. We evaluated structures of 15 different cell designs simulated by varying material types and photodiode do** strategies. At first, non-dominated sorting genetic algorithm~II (NSGA-II) produced Pareto-optimal-solutions sets for respective cell designs. Then, on investigating quantum efficiencies of all cell designs produced by NSGA-II, we applied a new multi-objective optimization algorithm~II (OptIA-II) to discover the Pareto fronts of select (three) best cell designs. Our designed OptIA-II algorithm improved the quantum efficiencies of all select cell designs and reduced their fabrication costs. We observed that the cell design comprising an optimally doped zinc-oxide-based transparent conductive oxide (TCO) layer and rough silver back reflector (BR) offered a quantum efficiency ($Q_e$) of $0.6031.$ Overall, this paper provides a full characterization of cell structure designs. It derives a relationship between quantum efficiency, $Q_e$ of a cell with its TCO layer's do** methods and TCO and BR layer's material types. Our solar cells design characterization enables us to perform a cost-benefit analysis of solar cells usage in real-world applications △ Less

Submitted 11 September, 2021; originally announced September 2021.

Comments: published in 2021

Journal ref: Energy Systems, 2021

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Authors: Marilena Vivona, Giuseppe Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Abstract: The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On th… ▽ More The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase of the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices are discussed. △ Less

Submitted 15 April, 2021; v1 submitted 17 February, 2021; originally announced February 2021.

Journal ref: J. Phys. D: Appl. Phys. 54, (2021) 445107

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

Authors: Salvatore Sanzaro, Corrado Bongiorno, Paolo Badalà, Anna Bassi, Giovanni Franco, Patrizia Vasquez, Alessandra Alberti, Antonino La Magna

Abstract: We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A multimethod approach based on Transmission Electron Microscopy, Energy Dispersive Spectroscopy and Diffraction (electron and X-ray) techniques has been implemented for a… ▽ More We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A multimethod approach based on Transmission Electron Microscopy, Energy Dispersive Spectroscopy and Diffraction (electron and X-ray) techniques has been implemented for a cross-correlated description of the final state of the contact after laser irradiation. They detailed the stoichiometry and the lattice structure of each phase formed as well as the Ni/Si alloy profile along the contact for laser fluences in the range 2.4-3.8 J/cm2. To make a bridge between process conditions and post-process characterizations, time dependent ultra-fast phenomena (laser pulse about 160ns), such as intermixing driven melting and Ni-silicides reactions, have been simulated by a modified phase fields approach in the proper many-compounds formulation. We disclose that raising laser fluence has multiple effects: 1) the thickness of the silicide layer formed at the interface with 4H-SiC expands; 2) the silicon content into the reacted layer increases; 3) a Ni2Si phase is promoted at the highest fluence 3.8 J/cm2; 4) silicon atomic diffusion into a topmost residual nickel layer occurs, with the Ni/Si ratio increasing towards the contact surface. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Comments: 12 pages, 8 figures

Journal ref: Applied Surface Science 539 (2021) 148218

Simulation of the growth kinetics in group IV compound semiconductors

Authors: A. La Magna, A. Alberti, E. Barbagiovanni, C. Bongiorno, M. Cascio, I. Deretzis, F. La Via, E. Smecca

Abstract: We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of our numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom k… ▽ More We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of our numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom kinetics depend critically on process-related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. We demonstrate that quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples. △ Less

Submitted 22 January, 2020; originally announced January 2020.

Journal ref: Phys. Status Solidi A 2019, 216, 1800597

Electron trap** at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Authors: Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Abstract: Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transien… ▽ More Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled taking into account also the interface state density in a tunnelling relaxation model and it allowed to locate traps within a tunnelling distance up to 1.3nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a Non-Abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiOx matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Journal ref: Nanotechnology 29 (2018) 397502

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Authors: F. Giannazzo, G. Greco, S. Di Franco, P. Fiorenza, I. Deretzis, A. La Magna, C. Bongiorno, M. Zimbone, F. La Via, M. Zielinski, F. Roccaforte

Abstract: In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization o… ▽ More In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current map** of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering. △ Less

Submitted 16 January, 2020; v1 submitted 27 December, 2019; originally announced December 2019.

Comments: 20 pages, 7 figures

Journal ref: Adv. Electron. Mater. 2019, 1901171

Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations

Authors: I. Deretzis, M. Camarda, F. La Via, A. La Magna

Abstract: We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized per… ▽ More We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide. △ Less

Submitted 28 June, 2012; originally announced June 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 85, 235310 (2012)

Correlation between microstructure deflections and film/substrate curvature under generalized stress fields

Authors: Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Abstract: In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepita… ▽ More In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively. △ Less

Submitted 21 October, 2011; originally announced October 2011.

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Authors: I. Deretzis, A. La Magna

Abstract: We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface reconstruction of the graphene/SiC heterosystem, we find that both H and Li can restore the ideal structural characteristics of the two nonequivalent junction parts (i.e.… ▽ More We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface reconstruction of the graphene/SiC heterosystem, we find that both H and Li can restore the ideal structural characteristics of the two nonequivalent junction parts (i.e. graphene and the SiC substrate) when inserted at the interface. However, the chemical/electrostatic interactions remain different for the two cases. Hence, H-intercalated epitaxial graphene is subject to a sublattice symmetry-breaking electronic interference that perturbs the Dirac point, whereas Li intercalation gives rise to a highly $n$-doped system due to a nonuniform delocalization of Li charges. Results bring to discussion the role of substrate engineering in epitaxial graphene on SiC. △ Less

Submitted 22 November, 2011; v1 submitted 4 October, 2011; originally announced October 2011.

Comments: 6 pages, 4 figures, accepted in PRB

Journal ref: Phys. Rev. B 84, 235426 (2011)

Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

Authors: I. Deretzis, A. La Magna

Abstract: We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $π$-bands partially preserved.… ▽ More We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $π$-bands partially preserved. Typical free-standing characteristics are fully recovered with a second graphene layer. We moreover discuss on the magnetic properties of the interface and the absence of Fermi-level pinning effects that could allow for a plausible device operation starting from the off-state. △ Less

Submitted 4 March, 2011; originally announced March 2011.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 98, 023113 (2011)

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

Authors: I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna

Abstract: We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and do** effects strongly influence the transport properties, giving rise to conductance asymmetries an… ▽ More We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and do** effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al. △ Less

Submitted 21 October, 2010; originally announced October 2010.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 82, 161413(R) (2010)

Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies

Authors: I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna

Abstract: We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of… ▽ More We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of the conductance distribution $g$. The underlying mechanism is based on wavefunction localizations and perturbations that in the case of the first $π-π^*$ plateau can give rise to impurity-like pseudogaps with both donor and acceptor characteristics. Confinement and geometry are crucial for the manifestation of such effects. Self-consistent quantum transport calculations characterize vacancies as local charging centers that can induce electrostatic inhomogeneities on the ribbon topology. △ Less

Submitted 4 February, 2010; originally announced February 2010.

Comments: 5 pages, 4 figures, accepted for publication at PRB

Journal ref: Phys. Rev. B 81, 085427 (2010)

Electronic structure of epitaxial graphene nanoribbons on SiC(0001)

Authors: I. Deretzis, A. La Magna

Abstract: We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended Hückel Theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from… ▽ More We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended Hückel Theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from this interaction is a Fermi level pinning effect introduced by dangling interface bonds. Such phenomenon is independent from the width of the considered nanostructures, compromising the importance of confinement in these systems. △ Less

Submitted 18 August, 2009; originally announced August 2009.

Comments: 8 pages, 4 figures

Journal ref: Appl. Phys. Lett. 95, 063111 (2009)

Ab initio prediction of Boron compounds arising from Borozene: Structural and electronic properties

Authors: G. Forte, A. La Magna, I. Deretzis, R. Pucci

Abstract: Structure and electronic properties of two unusual boron clusters obtained by fusion of borozene rings has been studied by means of first principles calculations, based on the generalized-gradient approximation of the density functional theory, and the semiempirical tight-binding method was used for the transport calculations. The role of disorder has also been considered with single vacancies a… ▽ More Structure and electronic properties of two unusual boron clusters obtained by fusion of borozene rings has been studied by means of first principles calculations, based on the generalized-gradient approximation of the density functional theory, and the semiempirical tight-binding method was used for the transport calculations. The role of disorder has also been considered with single vacancies and substitutional atoms. Results show that the pure boron clusters are topologically planar and characterized by (3c-2e) bonds, which can explain, together with the aromaticity (estimated by means of NICS), the remarkable cohesive energy values obtained. Such feature makes these systems competitive with the most stable boron clusters to date. On the contrary, the introduction of impurities compromises stability and planarity in both cases. The energy gap values indicate that these clusters possess a semiconducting character, while when the larger system is considered, zero-values of the density of states are found exclusively within the HOMO-LUMO gap. Electron transport calculations within the Landauer formalism confirm these indications, showing semiconductor-like low bias differential conductance for these stuctures. Differences and similarities with Carbon clusters are highlighted in the discussion. △ Less

Submitted 8 August, 2009; originally announced August 2009.

Comments: 10 pages, 2 tables, 5 figures

Insulator-metal transition in biased finite polyyne systems

Authors: A. La Magna, I. Deretzis, V. Privitera

Abstract: A method for the study of the electronic transport in strongly coupled electron-phonon systems is formalized and applied to a model of polyyne chains biased through metallic Au leads. We derive a stationary non equilibrium polaronic theory in the general framework of a variational formulation. The numerical procedure we propose can be readily applied if the electron-phonon interaction in the dev… ▽ More A method for the study of the electronic transport in strongly coupled electron-phonon systems is formalized and applied to a model of polyyne chains biased through metallic Au leads. We derive a stationary non equilibrium polaronic theory in the general framework of a variational formulation. The numerical procedure we propose can be readily applied if the electron-phonon interaction in the device hamiltonian can be approximated as an effective single particle electron hamiltonian. Using this approach, we predict that finite polyyne chains should manifest an insulator-metal transition driven by the non-equilibrium charging which inhibits the Peierls instability characterizing the equilibrium state. △ Less

Submitted 1 June, 2009; originally announced June 2009.

Comments: to appear at EPJB

Journal ref: Eur. Phys. J. B 70, 311-316 (2009)

A multiscale study of electronic structure and quantum transport in $C_{6n^2}H_{6n}$-based graphene quantum dots

Authors: I. Deretzis, G. Forte, A. Grassi, A. La Magna, G. Piccitto, R. Pucci

Abstract: We implement a bottom-up multiscale approach for the modeling of defect localization in $C_{6n^2}H_{6n}$ islands, i.e. graphene quantum dots with a hexagonal symmetry, by means of density functional and semiempirical approaches. Using the \textit{ab initio} calculations as a reference, we recognize the theoretical framework under which semiempirical methods describe adequately the electronic str… ▽ More We implement a bottom-up multiscale approach for the modeling of defect localization in $C_{6n^2}H_{6n}$ islands, i.e. graphene quantum dots with a hexagonal symmetry, by means of density functional and semiempirical approaches. Using the \textit{ab initio} calculations as a reference, we recognize the theoretical framework under which semiempirical methods describe adequately the electronic structure of the studied systems and thereon proceed to the calculation of quantum transport within the non-equilibrium Green's function formalism. The computational data reveal an impurity-like behavior of vacancies in these clusters and evidence the role of parameterization even within the same semiempirical context. In terms of conduction, failure to capture the proper chemical aspects in the presence of generic local alterations of the ideal atomic structure results in an improper description of the transport features. As an example, we show wavefunction localization phenomena induced by the presence of vacancies and discuss the importance of their modeling for the conduction characteristics of the studied structures. △ Less

Submitted 8 February, 2010; v1 submitted 19 May, 2009; originally announced May 2009.

Comments: 9 pages, 9 figures, accepted at J. Phys.: Condens. Matter

Journal ref: J. Phys.: Condens. Matter 22, 095504 (2010)

Modeling vacancies and hydrogen impurities in graphene: A molecular point of view

Authors: G. Forte, A. Grassi, G. M. Lombardo, A. La Magna, G. G. N. Angilella, R. Pucci, R. Vilardi

Abstract: We have followed a "molecular" approach to study impurity effects in graphene. This is thought as the limiting case of an infinitely large cluster of benzene rings. Therefore, we study several carbon clusters, with increasing size, from phenalene, including three benzene rings, up to coronene 61, with 61 benzene rings. The impurities considered were a chemisorbed H atom, a vacancy, and a substit… ▽ More We have followed a "molecular" approach to study impurity effects in graphene. This is thought as the limiting case of an infinitely large cluster of benzene rings. Therefore, we study several carbon clusters, with increasing size, from phenalene, including three benzene rings, up to coronene 61, with 61 benzene rings. The impurities considered were a chemisorbed H atom, a vacancy, and a substitutional proton. We performed HF and UHF calculations using the STO-3G basis set. With increasing cluster size in the absence of impurities, we find a decreasing energy gap, here defined as the HOMO-LUMO difference. In the case of H chemisorption or a vacancy, the gap does not decrease appreciably, whereas it is substantially reduced in the case of a substitutional proton. The presence of an impurity invariably induces an increase of the density of states near the HOMO level. We find a zero mode only in the case of a substitutional proton. In agreement with experiments, we find that both the chemisorbed H, the substitutional proton, and the C atom near a vacancy acquire a magnetic moment. The relevance of graphene clusters for the design of novel electronic devices is also discussed. △ Less

Submitted 5 August, 2008; originally announced August 2008.

Comments: to appear in Phys. Lett. A

Journal ref: Phys. Lett. A 372 (2008) 6168

Bias-driven local density of states alterations and transport in ballistic molecular devices

Authors: Ioannis Deretzis, Antonino La Magna

Abstract: We study dynamic nonequilibrium electron charging phenomena in ballistic molecular devices at room temperature that compromise their response to bias and whose nature is evidently distinguishable from static Schottky-type potential barriers. Using various metallic/semiconducting carbon nanotubes and alkane dithiol molecules as active parts of a molecular bridge, we perform self-consistent quantu… ▽ More We study dynamic nonequilibrium electron charging phenomena in ballistic molecular devices at room temperature that compromise their response to bias and whose nature is evidently distinguishable from static Schottky-type potential barriers. Using various metallic/semiconducting carbon nanotubes and alkane dithiol molecules as active parts of a molecular bridge, we perform self-consistent quantum transport calculations under the nonequilibrium Green's function formalism coupled to a three-dimensional Poisson solver for a mutual description of chemistry and electrostatics. Our results sketch a particular tracking relationship between the device's local density of states and the contact electrochemical potentials that can effectively condition the conduction process by altering the electronic structure of the molecular system. Such change is unassociated to electronic/phononic scattering effects while its extent is highly correlated to the conducting character of the system, giving rise to an increase of the intrinsic resistance of molecules with a semiconducting character and a symmetric mass-center disposition. △ Less

Submitted 12 May, 2008; originally announced May 2008.

Comments: 10 pages, 7 figures

Journal ref: J. Chem. Phys. 128, 164706 (2008)

Nonequilibrium electron charging in carbon-nanotube-based molecular bridges

Authors: Ioannis Deretzis, Antonino La Magna

Abstract: We evidence the importance of electron charging under nonequilibrium conditions for carbon-nanotube-based molecular bridges, using a self-consistent Green's function method with an extended Huckel Hamiltonian and a three-dimensional Poisson solver. Our analysis demonstrates that such feature is highly dependent on the chirality of the carbon nanotube as well as on the type of the contact metal,… ▽ More We evidence the importance of electron charging under nonequilibrium conditions for carbon-nanotube-based molecular bridges, using a self-consistent Green's function method with an extended Huckel Hamiltonian and a three-dimensional Poisson solver. Our analysis demonstrates that such feature is highly dependent on the chirality of the carbon nanotube as well as on the type of the contact metal, conditioning in a nongeneralized way the system's conduction mechanism. Based on its impact on transport, we argue that self-consistency is essential for the current-voltage calculations of semiconducting nanotubes, whereas less significant in the case of metallic ones. △ Less

Submitted 22 October, 2007; originally announced October 2007.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 91, 163111 (2007)

Phonon Driven Nonlinear Electrical Behavior in Molecular Devices

Authors: Antonino La Magna, Ioannis Deretzis

Abstract: Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy scales. Nonlinear electrical features emerge from the calculated current-voltage characteristics. The quantum corrections with respect to the adiabatic limit… ▽ More Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy scales. Nonlinear electrical features emerge from the calculated current-voltage characteristics. The quantum corrections with respect to the adiabatic limit characterize the transport scenario, and the polaronic reduction of the effective device-lead coupling plays a fundamental role in the unusual electrical features. △ Less

Submitted 9 October, 2007; originally announced October 2007.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Lett. 99, 136404 (2007)

Role of contact bonding on electronic transport in metal-carbon nanotube-metal systems

Authors: Ioannis Deretzis, Antonino La Magna

Abstract: We have investigated the effects of the interfacial bond arrangement on the electronic transport features of metal-nanotube-metal systems. The transport properties of finite, defect-free armchair and zigzag single-walled carbon nanotubes attached to Au(111) metallic contacts have been calculated by means of the non-equilibrium Green functional formalism with the Tight-Binding and the Extended Hu… ▽ More We have investigated the effects of the interfacial bond arrangement on the electronic transport features of metal-nanotube-metal systems. The transport properties of finite, defect-free armchair and zigzag single-walled carbon nanotubes attached to Au(111) metallic contacts have been calculated by means of the non-equilibrium Green functional formalism with the Tight-Binding and the Extended Huckel Hamiltonians. Our calculations show that the electrode material is not the only factor which rules contact transparency. Indeed, for the same electrode, but changing nanotube helicities, we have observed an overall complex behaviour of the transmission spectra due to band mixing and interference. The comparison of the two models shows that the Tight Binding approach fails to give a satisfactory representation of the transmission function when a more accurate description of the C-C and Au-C chemical bonds has to be considered. We have furthermore examined the effect of interface geometry variance on conduction and found that contact-nanotube distance has a significant impact, while contact-nanotube symmetry plays a marginal, yet evident role. △ Less

Submitted 3 October, 2006; originally announced October 2006.

Comments: 24 pages, 15 figures

Journal ref: Nanotechnology 17 (2006) 5063-5072