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Showing 1–3 of 3 results for author: Lüssem, B

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  1. arXiv:2302.09002  [pdf

    cs.OS cs.AR cs.LG

    Virtualization of Tiny Embedded Systems with a robust real-time capable and extensible Stack Virtual Machine REXAVM supporting Material-integrated Intelligent Systems and Tiny Machine Learning

    Authors: Stefan Bosse, Sarah Bornemann, Björn Lüssem

    Abstract: In the past decades, there has been a significant increase in sensor density and sensor deployment, driven by a significant miniaturization and decrease in size down to the chip level, addressing ubiquitous computing, edge computing, as well as distributed sensor networks. Material-integrated and intelligent systems (MIIS) provide the next integration and application level, but they create new cha… ▽ More

    Submitted 17 February, 2023; originally announced February 2023.

  2. arXiv:1302.3435  [pdf, other

    cond-mat.mtrl-sci physics.chem-ph physics.optics

    White organic light-emitting diodes: Status and perspective

    Authors: Sebastian Reineke, Michael Thomschke, Björn Lüssem, Karl Leo

    Abstract: White organic light-emitting diodes (OLEDs) are ultra-thin, large-area light sources made from organic semiconductor materials. Over the last decades, much research has been spent on finding the suitable materials to realize highly efficient monochrome and white OLEDs. With their high efficiency, color-tunability, and color-quality, white OLEDs are emerging to become one of the next generation lig… ▽ More

    Submitted 14 February, 2013; originally announced February 2013.

    Comments: 53 pages, 51 figures, to be published in Review of Modern Physics

    Journal ref: Rev. Mod. Phys. 85, 1245 (2013)

  3. arXiv:1010.5743  [pdf, other

    cond-mat.mtrl-sci

    Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

    Authors: Hans Kleemann, Rafael Gutierrez, Frank Lindner, Stanislav Avdoshenko, Pedro D. Manrique, Björn Lüssem, Gianaurelio Cuniberti, Karl Leo

    Abstract: Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the do** concentration and the thickness of the intrinsic layer. The breakdown effect with its exp… ▽ More

    Submitted 27 October, 2010; originally announced October 2010.

    Comments: to appear in Nano Letters Article ASAP (2010)