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Improving the long-term stability of new-generation perovskite-based TCO using binary and ternary oxides cap** layers
Authors:
Moussa Mezhoud,
Martando Rath,
Stéphanie Gascoin,
Sylvain Duprey,
Philippe Marie,
Julien Cardin,
Christophe Labbé,
Wilfrid Prellier,
Ulrike Lüders
Abstract:
We report the impact of cap** layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of resistivity during heat treatment in ambient environment. In the present study, various protecting layers (amorphous Al2O3, LaAlO3 (LAO), TiO2 grown in base pressure and TiO2 deposited under oxygen partial pressure) are grown in-situ on polycrystalli…
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We report the impact of cap** layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of resistivity during heat treatment in ambient environment. In the present study, various protecting layers (amorphous Al2O3, LaAlO3 (LAO), TiO2 grown in base pressure and TiO2 deposited under oxygen partial pressure) are grown in-situ on polycrystalline perovskite SrVO3 (SVO) thin films using Pulsed Laser Deposition (PLD). The results show that amorphous LaAlO3 is the most promising protection layer among the oxide layers, to preserve both electrical and optical properties of perovskite SVO films from natural as well as artificial aging. Our present approach for a cap** layer on SVO may address the long-term stability issues of correlated TCOs and would open an opportunity for the future oxide electronics applications.
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Submitted 10 June, 2024;
originally announced June 2024.
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Uncovering the lowest thickness limit for room-temperature ferromagnetism of Cr$_{1.6}$Te$_{2}$
Authors:
Sandeep Kumar Chaluvadi,
Shyni Punathum Chalil,
Anupam Jana,
Deepak Dagur,
Giovanni Vinai,
Federico Motti,
Jun Fujii,
Moussa Mezhoud,
Ulrike Lüders,
Vincent Polewczyk,
Ivana Vobornik,
Giorgio Rossi,
Chiara Bigi,
Younghun Hwang,
Thomas Olsen,
Pasquale Orgiani,
Federico Mazzola
Abstract:
Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnonics and memory applications. Downscaling such systems to the ultra-thin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr$_{1.6}$Te$_{2}$ by using pulsed laser deposition, and we uncovered the mi…
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Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnonics and memory applications. Downscaling such systems to the ultra-thin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr$_{1.6}$Te$_{2}$ by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room temperature magnetic order is maintained. The electronic and magnetic structure is explored experimentally and theoretically and it is shown that the films exhibit strong in-plane magnetic anisotropy as a consequence of large spin-orbit effects. Our study elucidates both magnetic and electronic properties of Cr$_{1.6}$Te$_{2}$, and corroborates the importance of intercalation to tune the magnetic properties of nanoscale materials architectures.
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Submitted 7 June, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Artificial ageing of thin films of the indium-free transparent conducting oxide SrVO3
Authors:
M. Rath,
M. Mezhoud,
O. El Khaloufi,
O. Lebedev,
J. Cardin,
Ch. Labbé,
F. Gourbilleau,
V. Polewczyk,
G. Vinai,
P. Torelli,
A. Fouchet,
A. David,
W. Prellier,
U. Lüders
Abstract:
SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the ch…
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SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural ageing of the films, and allows to follow the evolution of their related properties. The combination of techniques rather sensitive to the film surface and of techniques sampling the film volume will emphasize the presence of a surface oxidation evolving in time at low annealing temperatures, whereas the perovskite phase is destroyed throughout the film for treatments above 200 °C. The present study is designed to understand the thermal degradation and long-term stability issues of vanadate-based TCOs, and to identify technologically viable solutions for the application of this group as new TCOs.
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Submitted 15 March, 2023;
originally announced March 2023.
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Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
Authors:
Rodrigo Leal Martir,
María José Sánchez,
Myriam Aguirre,
Walter Quiñonez,
Cristian Ferreyra,
Carlos Acha,
Jerome Lecourt,
Ulrike Lüders,
Diego Rubi
Abstract:
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of elect…
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Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOx and TaOy layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOx and TaOy layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.
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Submitted 7 July, 2022;
originally announced July 2022.
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Polarons formation in Bi-deficient BaBiO$_3$
Authors:
W. Román Acevedo,
S. Di Napoli,
F. Romano,
G. Rodríguez Ruiz,
P. Nukala,
C. Quinteros,
J. Lecourt,
U. Lüders,
V. Vildosola,
D. Rubi
Abstract:
BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb do**. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia cap** layer. By combinin…
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BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb do**. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia cap** layer. By combining transport measurements with ab initio calculations we propose an scenario where the Bi-vacancies give rise to the formation of polarons and suggest that the electrical transport is dominated by the migration of these polarons trapped at Bi$^{3+}$ sites. Our work shows that cation vacancies engineering -- hardly explored to date -- appears as a promising pathway to tune the electronic and functional properties of perovskites.
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Submitted 9 April, 2021;
originally announced April 2021.
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Electric selective activation of memristive interfaces in TaO$_x$-based devices
Authors:
C. Ferreyra,
M. J. Sánchez,
M. Aguirre,
C. Acha,
S. Bengió,
J. Lecourt,
U. Lüders,
D. Rubi
Abstract:
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfac…
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The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
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Submitted 8 August, 2019;
originally announced August 2019.
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Magnetism tailored by mechanical strain engineering in PrVO$_3$ thin films
Authors:
Deepak Kumar,
Adrian David,
Arnaud Fouchet,
Alain Pautrat,
Julien Varignon,
Chang Uk Jung,
Ulrike Lüders,
Bernadette Domengès,
Olivier Copie,
Philippe Ghosez,
Wilfrid Prellier
Abstract:
Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Néel temperature T$_N$…
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Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Néel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides.
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Submitted 12 March, 2019;
originally announced March 2019.
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Manganite-based three level memristive devices with self-healing capability
Authors:
W. Román Acevedo,
D. Rubi,
J. Lecourt,
U. Lüders,
F. Gomez-Marlasca,
P. Granell,
F. Golmar,
P. Levy
Abstract:
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an interm…
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We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.
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Submitted 16 June, 2016;
originally announced June 2016.
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Tuning the electronic properties at the surface of BaBiO3 thin films
Authors:
Cristian Ferreyra,
Francisco Guller,
Florencia Marchini,
Ulrike Lüders,
Cecilia Albornoz,
Ana Gabriela Leyva,
Federico José Williams,
Ana María Llois,
Verónica Vildosola,
Diego Rubi
Abstract:
The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposit…
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The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron do** at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.
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Submitted 2 June, 2016; v1 submitted 26 August, 2015;
originally announced August 2015.
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On the ferromagnetic character of (LaVO$_3$)$_m$/SrVO$_3$ superlattices
Authors:
Cosima Schuster,
Ulrike Lueders,
Udo Schwingenschloegl,
Raymond Fresard
Abstract:
The experimental observation that vanadate superlattices (LaVO$_3$)$_m$/SrVO$_3$ show ferromagnetism up to room temperature [U.\ Lüders {\it et al.}, Phys.\ Rev.\ B {\bf 80}, 241102R (2009)] is investigated by means of density functional theory. First, the influence of the density functional on the electronic and magnetic structure of bulk ${\rm LaVO_3}$ is discussed. Second, the band structure of…
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The experimental observation that vanadate superlattices (LaVO$_3$)$_m$/SrVO$_3$ show ferromagnetism up to room temperature [U.\ Lüders {\it et al.}, Phys.\ Rev.\ B {\bf 80}, 241102R (2009)] is investigated by means of density functional theory. First, the influence of the density functional on the electronic and magnetic structure of bulk ${\rm LaVO_3}$ is discussed. Second, the band structure of a (LaVO$_3$)$_m$/SrVO$_3$ slab for $m=5$ and 6 is calculated. Very different behaviors for odd and even values of $m$ are found: In the odd case lattice relaxation results into a buckling of the interface VO$_2$ layers that leads to spin-polarized interfaces. In the even case a decoupling of the interface VO$_2$ layers from the LaO layers is obtained, confining the interface electrons into a two-dimensional electron gas. The orbital reconstruction at the interface due to the lattice relaxation is discussed.
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Submitted 13 November, 2012;
originally announced November 2012.
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Structural transition in LaVO3/SrVO3 superlattices and its influence on transport properties
Authors:
A. David,
R. Frésard,
Ph. Boullay,
W. Prellier,
U. Lüders,
P. -E. Janolin
Abstract:
Measurements of the resistive properties and the lattice parameters of a (LaVO3)[6 unit cells]/(SrVO3)[1 unit cell] superlattice between 10K and room temperature are presented. A low temperature metallic phase compatible with a Fermi liquid behavior is evidenced. It disappears in the vicinity of a structural transition from a monoclinic to tetragonal phase, in which disorder seems to strongly infl…
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Measurements of the resistive properties and the lattice parameters of a (LaVO3)[6 unit cells]/(SrVO3)[1 unit cell] superlattice between 10K and room temperature are presented. A low temperature metallic phase compatible with a Fermi liquid behavior is evidenced. It disappears in the vicinity of a structural transition from a monoclinic to tetragonal phase, in which disorder seems to strongly influence the transport. Our results will enrich the understanding of the electronic properties of complex heterostructures.
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Submitted 18 May, 2011;
originally announced May 2011.
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Microstructure and interface studies of LaVO3/SrVO3 superlattices
Authors:
P. Boullay,
A. David,
W. C. Sheets,
U. Lüders,
W. Prellier,
H. Tan,
J. Verbeeck,
G. Van Tendeloo,
C. Gatel,
G. Vincze,
Z. Radi
Abstract:
The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on (100)-SrTiO3 (STO) substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orienta…
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The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on (100)-SrTiO3 (STO) substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3 while SVO layers suffers from a tetragonal distortion due to the substrate induced stain. Electron Energy Loss Spectroscopy (EELS) investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and SrVO3 layers.
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Submitted 16 December, 2010;
originally announced December 2010.
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Anisotropic magnetocaloric effect in all-ferromagnetic (La0.7Sr0.3MnO3/SrRuO3) superlattices
Authors:
S. Thota,
Q. Zhang,
F. Guillou,
U. Luders,
N. Barrier,
W. Prellier,
A. Wahl,
P. Padhan
Abstract:
We exploit the magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices to realize a crossover between inverse and conventional magnetic entropy changes. Our data reveal a strong anisotropic nature of the magnetocaloric effect due to the magnetic anisotropy of the superlattice. Therefore, artificial superlattices built from ferromagnetic materials that can be used to alter the magnetic…
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We exploit the magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices to realize a crossover between inverse and conventional magnetic entropy changes. Our data reveal a strong anisotropic nature of the magnetocaloric effect due to the magnetic anisotropy of the superlattice. Therefore, artificial superlattices built from ferromagnetic materials that can be used to alter the magnetic structure as well as the magnetic anisotropy, could also be utilized for tuning the magnetocaloric properties, which may open a constructive approach for magnetic refrigeration applications.
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Submitted 5 August, 2010;
originally announced August 2010.
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Room temperature magnetism in LaVO3/SrVO3 superlattices by geometrically confined do**
Authors:
U. Luders,
W. C. Sheets,
A. David,
W. Prellier,
R. Fresard
Abstract:
Based on the Hubbard model of strongly correlated systems, a reduction in the bandwidth of the electrons can yield a substantial change in the properties of the material. One method to modify the bandwidth is geometrically confined do**, i.e. the introduction of a (thin) dopant layer in a material. In this paper, the magnetic properties of LaVO$_3$/SrVO$_3$ superlattices, in which the geometri…
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Based on the Hubbard model of strongly correlated systems, a reduction in the bandwidth of the electrons can yield a substantial change in the properties of the material. One method to modify the bandwidth is geometrically confined do**, i.e. the introduction of a (thin) dopant layer in a material. In this paper, the magnetic properties of LaVO$_3$/SrVO$_3$ superlattices, in which the geometrically confined do** is produced by a one monolayer thick SrVO$_3$ film, are presented. In contrast to the solid solution La$_{1-x}$Sr$_x$VO$_3$, such superlattices have a finite magnetization up to room temperature. Furthermore, the total magnetization of the superlattice depends on the thickness of the LaVO$_3$ layer, indicating an indirect coupling of the magnetization that emerges at adjacent dopant layers. Our results show that geometrically confined do**, like it can be achieved in superlattices, reveals a way to induce otherwise unaccessible phases, possibly even with a large temperature scale.
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Submitted 18 December, 2009;
originally announced December 2009.
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Constrained ferroelectric domain orientation in (BiFeO3)m(SrTiO3)n superlattice
Authors:
R. Ranjith,
R. V. K. Mangalam,
Ph. Boullay,
A. David,
M. B. Lepetit,
U. Luders,
W. Prellier,
A. Da Costa,
A. Ferri,
R. Desfeux,
Gy. Vincze,
Zs. Radi,
C. Aruta
Abstract:
Ferroelectric domains were investigated using piezoresponse force microscopy in superlattices composed of multiferroic BiFeO3 and SrTiO3 layers. Compared to single BiFeO3 thin films, a reduction in the domains size and a suppression of the in-plane orientation of domains are observed in a superlattice of (BiFeO3)4(SrTiO3)8, suggesting a constrained ferroelectric domain orientation along the out-…
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Ferroelectric domains were investigated using piezoresponse force microscopy in superlattices composed of multiferroic BiFeO3 and SrTiO3 layers. Compared to single BiFeO3 thin films, a reduction in the domains size and a suppression of the in-plane orientation of domains are observed in a superlattice of (BiFeO3)4(SrTiO3)8, suggesting a constrained ferroelectric domain orientation along the out-of-plane <001> direction. Such modification of domain size and orientation in BiFeO3-based heterostructures could play a vital role on engineering the domains and domain wall mediated functional properties necessary for device applications
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Submitted 2 December, 2009;
originally announced December 2009.
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Probing of local ferroelectricity in BiFeO3 thin films and (BiFeO3)m(SrTiO3)m superlattices
Authors:
R. Ranjith,
U. Luders,
W. Prellier,
A. Da Costa,
I. Dupont,
R. Desfeux
Abstract:
Ferroelectric BiFeO3 thin films and artificial superlattices of (BiFeO3)m(SrTiO3)m (m~ 1 to 10 unit cells) were fabricated on (001)-oriented SrTiO3 substrates by pulsed laser ablation. The variation of leakage current and macroscopic polarization with periodicity was studied. Piezo force microscopy studies revealed the presence of large ferroelectric domains in the case of BiFeO3 thin films whil…
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Ferroelectric BiFeO3 thin films and artificial superlattices of (BiFeO3)m(SrTiO3)m (m~ 1 to 10 unit cells) were fabricated on (001)-oriented SrTiO3 substrates by pulsed laser ablation. The variation of leakage current and macroscopic polarization with periodicity was studied. Piezo force microscopy studies revealed the presence of large ferroelectric domains in the case of BiFeO3 thin films while a size reduction in ferroelectric domains was observed in the case of superlattice structures. The results show that the modification of ferroelectric domains through superlattice, could provide an additional control on engineering the domain wall mediated functional properties.
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Submitted 18 February, 2009;
originally announced February 2009.
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Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures
Authors:
V. Laukhin,
X. Marti,
V. Skumryev,
D. Hrabovsky,
F. Sanchez,
M. V. Garcia-Cuenca,
C. Ferrater,
M. Varela,
U. Luders,
J. F. Bobo,
J. Fontcuberta
Abstract:
We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias fi…
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We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias field is suppressed. We discuss the dependence of the observed effect on the amplitude and polarity of the electric field. Particular attention is devoted to the role of current leakage across the ferroelectric layer.
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Submitted 16 January, 2007;
originally announced January 2007.
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Electric field control of exchange bias in multiferroic epitaxial heterostructures
Authors:
V. Laukhin,
V. Skumryev,
X. Marti,
D. Hrabovsky,
F. Sanchez,
M. V. Garcia-Cuenca,
C. Ferrater,
M. Varela,
U. Luders,
J. F. Bobo,
J. Fontcuberta
Abstract:
The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying a…
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The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices.
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Submitted 14 July, 2006;
originally announced July 2006.
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Exchange biasing and electric polarization with YMnO3
Authors:
X. Marti,
F. Sanchez,
D. Hrabovsky,
L. Fabrega,
A. Ruyter,
J. Fontcuberta,
V. Laukhin,
V. Skumryev,
M. V. Garcia-Cuenca,
C. Ferrater,
M. Varela,
A. Vila,
U. Luders,
J. F. Bobo
Abstract:
We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001…
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We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001) film, clear indications of exchange bias and enhanced coercivity are observed at low temperature. The observation of coexisting antiferromagnetism and electrical polarization suggests that the biferroic character of YMnO3 can be exploited in novel devices.
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Submitted 14 July, 2006;
originally announced July 2006.
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Spinel ferrites: old materials bring new opportunities for spintronics
Authors:
Ulrike Lueders,
Agnes Barthelemy,
Manuel Bibes,
Karim Bouzehouane,
Stephane Fusil,
Eric Jacquet,
Jean-Pierre Contour,
Jean-Francois Bobo,
Josep Fontcuberta,
Albert Fert
Abstract:
Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto per…
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Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner.
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Submitted 31 August, 2005;
originally announced August 2005.
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Enhanced magnetic moment and conductive behavior in NiFe2O4 spinel ultrathin films
Authors:
Ulrike Lueders,
Manuel Bibes,
Jean-Francois Bobo,
Matteo Cantoni,
Riccardo Bertacco,
Josep Fontcuberta
Abstract:
Bulk NiFe2O4 is an insulating ferrimagnet. Here, we report on the epitaxial growth of spinel NiFe2O4 ultrathin films onto SrTiO3 single-crystals. We will show that - under appropriate growth conditions - epitaxial stabilization leads to the formation of a spinel phase with magnetic and electrical properties that radically differ from those of the bulk material : an enhanced magnetic moment (Ms)…
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Bulk NiFe2O4 is an insulating ferrimagnet. Here, we report on the epitaxial growth of spinel NiFe2O4 ultrathin films onto SrTiO3 single-crystals. We will show that - under appropriate growth conditions - epitaxial stabilization leads to the formation of a spinel phase with magnetic and electrical properties that radically differ from those of the bulk material : an enhanced magnetic moment (Ms) - about 250% larger - and a metallic character. A systematic study of the thickness dependence of Ms allows to conclude that its enhanced value is due to an anomalous distribution of the Fe and Ni cations among the A and B sites of the spinel structure resulting from the off-equilibrium growth conditions and to interface effects. The relevance of these findings for spinel- and, more generally, oxide-based heterostructures is discussed. We will argue that this novel material could be an alternative ferromagetic-metallic electrode in magnetic tunnel junctions.
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Submitted 23 February, 2005;
originally announced February 2005.
