Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation
Authors:
Manuel Längle,
Barbara Maria Mayer,
Jacob Madsen,
Diana Propst,
Arixin Bo,
Clara Kofler,
Vinzent Hana,
Clemens Mangler,
Toma Susi,
Jani Kotakoski
Abstract:
Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive correlation between the spectra and specific defects has been demonstrated. Here, we prepare atomically clean suspended hBN samples and subject them to low-energy ion irr…
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Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive correlation between the spectra and specific defects has been demonstrated. Here, we prepare atomically clean suspended hBN samples and subject them to low-energy ion irradiation. The samples are characterized before and after irradiation via automated scanning transmission electron microscopy imaging to assess the defect concentrations and distributions. We find an intrinsic defect concentration of ca. 0.03/nm2 (with ca. 55% boron and 8% nitrogen single vacancies, 20% double vacancies and 16% more complex vacancy structures). To be able to differentiate between these and irradiation-induced defects, we create a significantly higher (but still moderate) concentration of defects with the ions (0.30/nm2), and now find ca. 55% boron and 12% nitrogen single vacancies, 14% double vacancies, and 18% more complex vacancy structures. The results demonstrate that already the simplest irradiation provides selectivity for the defect types, and open the way for future experiments to explore changing the selectivity by modifying the irradiation parameters.
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Submitted 10 April, 2024;
originally announced April 2024.
Two-dimensional few-atom noble gas clusters in a graphene sandwich
Authors:
Manuel Längle,
Kenichiro Mizohata,
Clemens Mangler,
Alberto Trentino,
Kimmo Mustonen,
E. Harriet Åhlgren,
Jani Kotakoski
Abstract:
Van der Waals atomic solids of noble gases on metals at cryogenic temperatures were the first experimental examples of two-dimensional systems. Recently such structures have also been created on surfaces under encapsulation by graphene, allowing studies at elevated temperatures through scanning tunneling microscopy. However, for this technique, the encapsulation layer often obscures the actual arr…
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Van der Waals atomic solids of noble gases on metals at cryogenic temperatures were the first experimental examples of two-dimensional systems. Recently such structures have also been created on surfaces under encapsulation by graphene, allowing studies at elevated temperatures through scanning tunneling microscopy. However, for this technique, the encapsulation layer often obscures the actual arrangement of the noble gas atoms. Here, we create Kr and Xe clusters in between two suspended graphene layers, and uncover their atomic structure through direct imaging with transmission electron microscopy. We show that small crystals (N<9) arrange as expected based on the simple non-directional van der Waals interaction. Crystals larger than this show some deviations for the outermost atoms, possibly enabled by deformations in the encapsulating graphene lattice. We further discuss the dynamics of the clusters within the graphene sandwich, and show that while all Xe clusters with up to N~100 remain solid, Kr clusters with already N~16 turn occasionally fluid under our experimental conditions with an estimated pressure of ca. 0.3 GPa. This study opens a way for the so-far unexplored frontier of encapsulated two-dimensional van der Waals solids with exciting possibilities for fundamental condensed matter physics research and possible applications in quantum information technology.
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Submitted 18 August, 2023; v1 submitted 27 June, 2023;
originally announced June 2023.
