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Cross-plane thermal conductivity of GaN/AlN superlattices
Authors:
Anna Spindlberger,
Dmytro Kysylychyn,
Lukas Thumfart,
Rajdeep Adhikari,
Armando Rastelli,
Alberta Bonanni
Abstract:
Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential in the perspective of improving the heat management for prospective applications. Here, the cross-plane (perpendicular to the sample's surface) therm…
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Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential in the perspective of improving the heat management for prospective applications. Here, the cross-plane (perpendicular to the sample's surface) thermal conductivity of GaN/AlN superlattices as a function of the layers' thickness is established by employing the $3ω$-method. Moreover, the role of interdiffusion at the interfaces on the phonon scattering is taken into account in the modelling and data treatment. It is found, that the cross-plane thermal conductivity of the epitaxial heterostructures can be driven to values as low as 5.9 W/(m$\cdot$K) comparable with those reported for amorphous films, thus opening wide perspectives for optimized heat management in III-nitride-based epitaxial multilayers.
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Submitted 12 February, 2021;
originally announced February 2021.
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Resonant excitation of infra-red emission in GaN:(Mn,Mg)
Authors:
Dmytro Kysylychyn,
Jan Suffczyński,
Tomasz Woźniak,
Nevill Gonzalez Szwacki,
Alberta Bonanni
Abstract:
By combining experimental photoluminescence excitation spectroscopy and calculations based on density functional theory and many-body Green's functions, the most efficient excitation channels of infra-red (IR) emission from Mn-Mg$_{k}$ paramagnetic complexes stabilized in GaN:(Mn,Mg) are here identified. Moreover, a Tanabe-Sugano energy diagram for 3$d^{2}$Mn$ ^{5+}$ is reconstructed and Mn-Mg…
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By combining experimental photoluminescence excitation spectroscopy and calculations based on density functional theory and many-body Green's functions, the most efficient excitation channels of infra-red (IR) emission from Mn-Mg$_{k}$ paramagnetic complexes stabilized in GaN:(Mn,Mg) are here identified. Moreover, a Tanabe-Sugano energy diagram for 3$d^{2}$Mn$ ^{5+}$ is reconstructed and Mn-Mg$_{3}$ are singled out as the predominant configurations responsible for the IR emission. The correlation of intensity of the individual emission lines as a function of temperature and excitation energy, allows assigning them to well defined and specific optical transitions.
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Submitted 6 March, 2018;
originally announced March 2018.
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All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared
Authors:
G. Capuzzo,
D. Kysylychyn,
R. Adhikari,
T. Li,
B. Faina,
A. Tarazaga Martín-Luengo,
A. Bonanni
Abstract:
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established,…
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Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.
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Submitted 25 August, 2016;
originally announced August 2016.
