-
Time-resolved X-ray diffraction study of the structural dynamics in a ferroelectric thin film induced by sub-coercive fields
Authors:
C. Kwamen,
M. Rössle,
W. Leitenberger,
M. Alexe,
M. Bargheer
Abstract:
The electric field-dependence of structural dynamics in a tetragonal ferroelectric lead zirconate titanate thin film is investigated under sub-coercive and above-coercive fields using time-resolved X-ray diffraction. During the application of an external field to the pre-poled thin film capacitor, structural signatures of domain nucleation and growth include broadening of the in-plane peak width o…
▽ More
The electric field-dependence of structural dynamics in a tetragonal ferroelectric lead zirconate titanate thin film is investigated under sub-coercive and above-coercive fields using time-resolved X-ray diffraction. During the application of an external field to the pre-poled thin film capacitor, structural signatures of domain nucleation and growth include broadening of the in-plane peak width of a Bragg reflection concomitant with a decrease of the peak intensity. This disordered domain state is remanent and can be erased with an appropriate voltage pulse sequence.
△ Less
Submitted 4 December, 2018;
originally announced December 2018.
-
Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching
Authors:
C. Kwamen,
M. Roessle,
M. Reinhardt,
W. Leitenberger,
F. Zamponi,
M. Alexe,
M. Bargheer
Abstract:
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard ferroelectric test-cycles with time-resolved x-ray diffraction to investigate the response of a nanoscale ferroelectric oxide capacitor upon charging, dischargin…
▽ More
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard ferroelectric test-cycles with time-resolved x-ray diffraction to investigate the response of a nanoscale ferroelectric oxide capacitor upon charging, discharging and switching. Piezoelectric strain develops during the electronic RC time constant and additionally during structural domain-wall creep. The complex atomic motion during ferroelectric polarization reversal starts with a negative piezoelectric response to the charge flow triggered by voltage pulses. Incomplete screening limits the compressive strain. The piezoelectric modulation of the unit cell tweaks the energy barrier between the two polarization states. Domain wall motion is evidenced by a broadening of the in-plane components of Bragg reflections. Such simultaneous measurements on a working device elucidate and visualize the complex interplay of charge flow and structural motion and challenges theoretical modelling.
△ Less
Submitted 4 June, 2017;
originally announced June 2017.
-
Optical Writing of Magnetic Properties by Remanent Photostriction
Authors:
V. Iurchuk,
D. Schick,
J. Bran,
D. Colson,
A. Forget,
D. Halley,
A. Koc,
M. Reinhardt,
C. Kwamen,
N. A. Morley,
M. Bargheer,
M. Viret,
R. Gumeniuk,
G. Schmerber,
B. Doudin,
B. Kundys
Abstract:
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the stra…
▽ More
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.
△ Less
Submitted 5 September, 2016;
originally announced September 2016.
