Showing 1–50 of 103 results for author: Kvon, Z D

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

Authors: A. V. Snegirev, V. M. Kovalev, M. V. Entin, E. B. Olshanetsky, N. N. Mikhailov, Z. D. Kvon

Abstract: The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole sc… ▽ More The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Optical Shubnikov - de Haas oscillations in 2D electron systems

Authors: M. L. Savchenko, J. Gospodaric, A. Shuvaev, I. A. Dmitriev, V. Dziom, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, A. Pimenov

Abstract: We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios of radiation and cyclotron frequencies and "tunable" nodes at positions sensitive to all parameters of the structure. The nodes in both real and imagin… ▽ More We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios of radiation and cyclotron frequencies and "tunable" nodes at positions sensitive to all parameters of the structure. The nodes in both real and imaginary parts of the measured complex transmittance are analyzed using a dynamic version of the static Lifshitz-Kosevich formula. These results demonstrate that the node structure of the dynamic SdH oscillations provides an all-optical access to quantization- and interaction-induced renormalization effects, in addition to parameters one can obtain from the static SdH oscillations. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Comments: Main text plus supplemental information

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

Authors: G. M. Gusev, A. D. Levin, E. B. Olshanetsky, Z. D. Kvon, V. M. Kovalev, M. V. Entin, N. N. Mikhailov

Abstract: In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties span… ▽ More In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties spans from low temperatures, where both subsystems are fully degenerate, to higher temperatures, where the Dirac holes remain degenerate while the heavy holes follow Boltzmann statistics, creating a partially degenerate regime. Through a developed theory, we successfully predict the behavior of resistivity as $ρ\sim T^2$ and $ρ\sim T^{3}$ for the fully degenerate and partially degenerate regimes, respectively, which is in reasonable agreement with experimental observations. Notably, at elevated temperatures, the interaction-limited resistivity surpasses the resistivity caused by impurity scattering by a factor of 5-6. These findings imply that the investigated system serves as a versatile experimental platform for exploring various interaction-limited transport regimes in two component plasma. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Comments: 11 pages, 5 figures

Journal ref: Phys.Rev.B, v. 109, 035302 (2024)

Spin Splitting and Disorder in HgTe-Based Massless Dirac Fermion Landau Levels

Authors: D. A. Kozlov, J. Ziegler, N. N. Mikhailov, Z. D. Kvon, D. Weiss

Abstract: An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose… ▽ More An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose strength grows monotonically with v. This behavior is consistent with calculations of the electron spectrum, which predicts a decrease in cyclotron gaps with increasing v. Oscillations with even filling factors, corresponding to spin gaps, behave less trivially. First, the SdH oscillations with filling factors of 4 and higher are resolved in a magnetic field that is 2-2.5 times smaller than the field required to resolve neighboring SdH oscillations with odd filling factors of 3 and higher. This indicates a significant increase in the size of the spin gap caused by an interface inversion asymmetry (IIA) leading to Dirac cone splitting in a zero magnetic field. Using the spin splitting value gamma as a fitting parameter, we obtained the best agreement between experimental data and calculations at gamma=1.5 meV. Next, spin splitting for the zeroth and first LLs is observed in 2-3 times stronger magnetic fields than for the other levels, indicating an increase in disorder near the Dirac point, due to the lack of screening. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 4 figures

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

Authors: A. D. Levin, G. M. Gusev, A. S. Yaroshevich, Z. D. Kvon, A. K. Bakarov

Abstract: In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of… ▽ More In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of hydrodynamic effects under controlled conditions. Through an analysis of the large negative magnetoresistivity and zero field resistivity, we deduce the scattering times for electron-electron and electron-phonon interactions, as well as the effective channel width. Our findings confirm that the system under investigation serves as a tunable experimental platform for investigating hydrodynamic transport regimes at temperatures above 10 K. △ Less

Submitted 22 September, 2023; originally announced September 2023.

Comments: 10 pages, 11 figures

Journal ref: Physical Review B 108, 115310 (2023)

Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers

Authors: M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon

Abstract: We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a… ▽ More We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a zero gap semiconductor. Nevertheless, since the bands inversion the two-dimensional (2D) topological surface states are still expected to exist. To check this claim we studied classical and quantum transport response of the system. We demonstrate that by tuning the top-gate voltage one can change the electron-dominating transport to the hole one. The highest electron mobility is found to be more than $300 \times 10^3$ cm$^2$/Vs. The system exhibits Shubnikov-de Haas (SdH) oscillations with a complicated pattern and shows up to 5 independent frequencies in corresponding Fourier spectra. They are attributed to the topological surface states, Volkov-Pankratov states and spin-degenerate bulk states in the accumulation layer near the gate. The observed peculiarities of the quantum transport are the strong SdH oscillations of the Hall resistance, and the suppressed oscillatory response of the topological surface states. △ Less

Submitted 8 February, 2023; originally announced February 2023.

Spectral maximum in the terahertz photoconductance of a quantum point contact

Authors: D. M. Kazantsev, V. L. Alperovich, V. A. Tkachenko, Z. D. Kvon

Abstract: The disappearance of the giant terahertz photoconductance of a quantum point contact under the increase in the photon energy, which was discovered experimentally (Otteneder et al., Phys. Rev. Applied 10 (2018) 014015) and studied by the numerical calculations of the photon-stimulated transport (O.A. Tkachenko et al., JETP Lett. 108 (2018) 396), is explained by the momentum conservation upon absorp… ▽ More The disappearance of the giant terahertz photoconductance of a quantum point contact under the increase in the photon energy, which was discovered experimentally (Otteneder et al., Phys. Rev. Applied 10 (2018) 014015) and studied by the numerical calculations of the photon-stimulated transport (O.A. Tkachenko et al., JETP Lett. 108 (2018) 396), is explained by the momentum conservation upon absorption of photons by tunneling electrons and on the base of perturbation theory calculations. △ Less

Submitted 5 August, 2022; originally announced August 2022.

Comments: 6 pages, 6 figures. To be published in JETP Letters (2022). arXiv admin note: substantial text overlap with arXiv:2107.11143

Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization

Authors: M. L. Savchenko, A. Shuvaev, I. A. Dmitriev, S. D. Ganichev, Z. D. Kvon, A. Pimenov

Abstract: We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a large-area GaAs-based heterostructure we detect up to 30 times larger MIRO signal for the cyclotron resonance (CR) active helicity, fully consistent with the concurre… ▽ More We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a large-area GaAs-based heterostructure we detect up to 30 times larger MIRO signal for the cyclotron resonance (CR) active helicity, fully consistent with the concurrently measured transmission and the deduced CR shape of the Drude absorption. We further elaborate conditions to avoid extrinsic factors capable of producing an apparent immunity of the photoresponse. △ Less

Submitted 16 June, 2022; v1 submitted 15 June, 2022; originally announced June 2022.

Quantum transport of Dirac fermions in HgTe gapless quantum wells

Authors: G. M. Gusev, A. D. Levin, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov

Abstract: We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, correspon… ▽ More We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge $ν=0$ state and bulk $ν\neq 0$ hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 6 pages, 5 figures

Journal ref: Nanomaterials, 12(12), 2047 (2022)

Scattering anisotropy in HgTe (013) quantum well

Authors: D. A. Khudaiberdiev, M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, Z. D. Kvon

Abstract: We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within t… ▽ More We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown. △ Less

Submitted 24 August, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 4 pages, 5 figures, published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 121, 083101 (2022);

Thermoelectric transport in a three-dimensional HgTe topological insulator

Authors: G. M. Gusev, Z. D. Kvon, A. D. Levin, N. N. Mikhailov

Abstract: The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the… ▽ More The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron - 3D hole scattering. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Comments: 6 pages, 3 figures

Journal ref: Nanomaterials 11, 3364, 2021

Transport through the network of topological channels in HgTe based quantum well

Authors: G. M. Gusev, Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, M. V. Entin, N. N. Mikhailov

Abstract: Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulato… ▽ More Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulator or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe quantum wells near the Dirac point, where the conductance is determined by a percolation along the zero-gap lines. The experimental results confirm the presence of percolating conducting channels of a finite width. Our work establishes the critical width HgTe QW as a promising platform for the study of the interplay between topology and localization. △ Less

Submitted 30 November, 2021; originally announced November 2021.

Comments: 7 pages, 5 figures

Journal ref: 2D Mater. 9, 015021, 2022

Energy spectrum of semimetallic HgTe quantum wells

Authors: Jan Gospodaric, Alexey Shuvaev, Nikolai N. Mikhailov, Ze D. Kvon, Elena G. Novik, Andrei Pimenov

Abstract: Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties result from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations ca… ▽ More Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties result from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations cannot be reflected in experiments due to the lack of appropriate tools. Here we report an experimental and theoretical study of two HgTe quantum wells with inverted energy spectrum in which two-dimensional semimetallic states are realized. Using magneto-optical spectroscopy at sub-THz frequencies we were able to obtain information about electron and hole cyclotron masses at all relevant Fermi level positions and different charge densities. The outcome is also supported by a Shubnikov-de Haas analysis of capacitance measurements, which allows obtaining information about the degeneracy of the active modes. From these data, it is possible to reconstruct electron and hole dispersion relations. Detailed comparative analysis of the energy dispersion relations with theoretical calculations demonstrates a good agreement, reflecting even several subtle features like band splitting, the second conduction band, and the overlaps between the first conduction and first valence band. Our study demonstrates that the cyclotron resonance experiments can be efficiently used to directly obtain the band structures of semimetallic 2D materials. △ Less

Submitted 15 September, 2021; originally announced September 2021.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 104, 115307 (2021)

Highly Superlinear Giant Terahertz Photoconductance in GaAs Quantum Point Contacts in the Deep Tunneling Regime

Authors: M. Otteneder, M. Hild, Z. D. Kvon, E. E. Rodyakina, M. M. Glazov, S. D. Ganichev

Abstract: A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For very low values of the normalized dark conductance $G_{\rm dark}/ G_0 \approx 10^{-6}$, with the conductance quantum $G_0=2e^2/h$, the photoconductance scales ex… ▽ More A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For very low values of the normalized dark conductance $G_{\rm dark}/ G_0 \approx 10^{-6}$, with the conductance quantum $G_0=2e^2/h$, the photoconductance scales exponentially with the radiation intensity, so that already at $ 100 \text{ mW}/\text{cm}^2$ it increases by almost four orders of magnitude. This effect is observed for a radiation electric field oriented along the source drain direction. We provide model considerations of the effect and attribute it to the variation of the tunneling barrier height by the radiation field made possible by local diffraction effects. We also demonstrate that cyclotron resonance due to an external magnetic field manifests itself in the photoconductance completely suppressing the photoresponse. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Comments: 14 pages, 16 figures

Magnetohydrodynamics and electro-electron interaction of massless Dirac fermions

Authors: D. A. Khudaiberdiev, G. M. Gusev, E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov

Abstract: The magnetotransport properties of massless Dirac fermions in a gapless HgTe quantum well are investigated. In samples with narrow channels, a large negative magnetoresistance with a Lorentzian profile is observed, which is interpreted as a manifestation of electron viscosity due to electron-electron interaction. Comparison of experiment with theory yields the shear stress relaxation time of the D… ▽ More The magnetotransport properties of massless Dirac fermions in a gapless HgTe quantum well are investigated. In samples with narrow channels, a large negative magnetoresistance with a Lorentzian profile is observed, which is interpreted as a manifestation of electron viscosity due to electron-electron interaction. Comparison of experiment with theory yields the shear stress relaxation time of the Dirac fermions caused by electron-electron scattering. △ Less

Submitted 30 July, 2021; originally announced July 2021.

Comments: 8 pages , 9 figures

Journal ref: Physical Review RESEARCH 3, L032031 (2021)

Viscous magnetotransport and Gurzhi effect in bilayer electron system

Authors: G. M. Gusev, A. S. Jaroshevich, A. D. Levin, Z. D. Kvon, A. K. Bakarov

Abstract: We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering i… ▽ More We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Comments: 8 pages, 8 figures

Journal ref: Physical Review B 103, 075303 (2021)

Topological insulators based on HgTe

Authors: Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility… ▽ More The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion. △ Less

Submitted 26 December, 2020; originally announced December 2020.

Comments: 18 pages, 24 figures

Journal ref: Physics - Uspekhi, 63(7) 629 - 647 (2020)

Gated two-dimensional electron gas in magnetic field: nonlinear versus linear regimes

Authors: N. Dyakonova, M. Dyakonov, Z. D. Kvon

Abstract: We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting… ▽ More We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting channel. The experimental results obtained in the non-linear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations. △ Less

Submitted 14 November, 2020; originally announced November 2020.

Comments: 6 pages, 8 figures

Band structure of a HgTe-based three-dimensional topological insulator

Authors: J. Gospodaric, V. Dziom, A. Shuvaev, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, E. G. Novik, A. Pimenov

Abstract: From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experiment… ▽ More From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k\cdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 102, 115113 (2020)

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

Authors: M. L. Savchenko, A. Shuvaev, I. A. Dmitriev, A. A. Bykov, A. K. Bakarov, Z. D. Kvon, A. Pimenov

Abstract: We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relativ… ▽ More We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements. △ Less

Submitted 25 August, 2020; originally announced August 2020.

Comments: Manuscript (7 pages, 1 figure) and Supplemental Material (12 pages, 9 figures)

Journal ref: Phys. Rev. Research 3, 012013 (2021)

Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film

Authors: M. L. Savchenko, M. Otteneder, I. A. Dmitriev, N. N. Mikhailov, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial… ▽ More We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DF and bulk electrons. At high electron densities, we observe THz radiation induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations (MIRO) previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of 2D electron system formed by helical surface states in strained HgTe films. △ Less

Submitted 20 November, 2020; v1 submitted 11 August, 2020; originally announced August 2020.

Weak antilocalization in partially relaxed 200-nm HgTe films

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain result… ▽ More The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Stokes flow around an obstacle in viscous two-dimensional electron liquid

Authors: G. M. Gusev, A. S. Jaroshevich, A. D. Levin, Z. D. Kvon, A. K. Bakarov

Abstract: The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensi… ▽ More The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions. △ Less

Submitted 12 May, 2020; originally announced May 2020.

Comments: 10 pages, 5 figures

Journal ref: Sci.Rep., 10, 7860 (2020)

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

Authors: A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov

Abstract: The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanis… ▽ More The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 4 pages, 4 figures

Journal ref: JETP Letters, v 111, 2, 121-125 (2020)

Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness

Authors: S. Hubmann, G. V. Budkin, M. Urban, V. V. Bel'kov, A. P. ~Dmitriev, J. Ziegler, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the… ▽ More We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $ω$ and momentum relaxation time $τ_{\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $ωτ\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $ω$. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Mesoscopic transport in two-dimensional topological insulators

Authors: G. M. Gusev, Z. D Kvon, E. B. Olshanetsky, N. N. Mikhailov

Abstract: Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels… ▽ More Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels in the submicrometer limit: the 4-terminal conductance is expected to be quantized at the universal value $2e^{2}/h$, and a nonlocal signal should appear due to a net current along the sample edge, carried by the helical states. On the other hand for longer channels the conductance has been found to deviate from the quantized value. This article reviewer the experimental and theoretical work related to the transport in two-dimensional topological insulators (2D-TI), based on HgTe quantum wells in zero magnetic field. We provide an overview of the basic mechanisms predicting a deviation from the quantized transport due to backscattering (accompanied by spin-flips) between the helical channels. We discuss the details of the model, which takes into account the edge and bulk contribution to the total current and reproduces the experimental results. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 13 pages, 12 figures

Journal ref: Invited Review article, Sol.St.Commun., Volume 302, 113701, November 2019

Anomalous Decay of Quantum Resistance Oscillations of Two Dimensional Helical Electrons in Magnetic Field

Authors: S. Abedi, S. A. Vitkalov, N. N. Mikhailov, Z. D. Kvon

Abstract: Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of t… ▽ More Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of the oscillations with temperature T shows that the parameter $ξ$ contains two terms: $ξ=ξ_1+ξ_2 T$. The temperature independent term, $ξ_1$, describes reduction of electron mean free path in magnetic field B pointing toward suppression of the topological protection of the electron states against impurity scattering. The temperature dependent term, $ξ_2 T$, indicates increase of the reciprocal velocity of 2D helical electrons suggesting modification of the electron spectrum in magnetic fields. △ Less

Submitted 8 June, 2019; originally announced June 2019.

Comments: 5 pages, 5 figures

Journal ref: Sci Rep 10, 7875 (2020)

Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe

Authors: J. Gospodaric, V. Dziom, A. Shuvaev, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, A. Pimenov

Abstract: We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate… ▽ More We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate that the superradiance effects are not sensitive to the details of the band structure of the material. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 115130 (2019)

Topological protection brought to light by the time-reversal symmetry breaking

Authors: S. U. Piatrusha, E. S. Tikhonov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. S. Khrapai

Abstract: Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the $\rm Z_2$ invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states -- the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magi… ▽ More Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the $\rm Z_2$ invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states -- the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magic and so far elusive property of the helical electrons, known as topological protection, prevents them from coherent backscattering as long as the underlying symmetry is preserved. Here we present an experiment which brings to light the strength of topological protection in one-dimensional helical edge states of a $\rm Z_2$ quantum spin-Hall insulator in HgTe. At low temperatures, we observe the dramatic impact of a tiny magnetic field, which results in an exponential increase of the resistance accompanied by giant mesoscopic fluctuations and a gap opening. This textbook Anderson localization scenario emerges only upon the time-reversal symmetry breaking, bringing the first direct evidence of the topological protection strength in helical edge states. △ Less

Submitted 12 July, 2019; v1 submitted 26 February, 2019; originally announced February 2019.

Comments: version accepted by Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 123, 056801 (2019)

Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films

Authors: S. Candussio, G. V. Budkin, M. Otteneder, D. A. Kozlov, I. A. Dmitriev, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant… ▽ More We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. △ Less

Submitted 2 May, 2019; v1 submitted 8 February, 2019; originally announced February 2019.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 054205 (2019)

Two-dimension Dirac fermions system in CdHgTe quantum wells

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, B. A. Piot

Abstract: We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well… ▽ More We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well exhibits a massless Dirac fermions system with a quality slightly better then in conventional HgTe quantum wells of critical thickness. Second quantum well exhibits a high-quality two-dimensional topological insulator state with the energy gap of around 10 meV and well-defined edge transport making it as a good candidate for further study and applications of topological insulators. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: 5 pages, 5 figures

Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well

Authors: G. M. Gusev, Z. D. Kvon, A. D. Levin, E. B. Olshanetsky, O. E. Raichev, N. N. Mikhailovand, S. A. Dvoretsky

Abstract: We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction.… ▽ More We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction. We test a hot carrier effect model and demonstrate that the energy transfer complies with the Wiedemann Franz law near the charge neutrality point in the edge transport regime. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: 8 pages, 4 figures

Journal ref: Scientific Reports, volume 9, 831 (2019)

Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

Authors: G. M. Gusev, O. E. Raichev, E. B. Olshanetsky, A. D. Levin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger t… ▽ More The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport. △ Less

Submitted 21 December, 2018; originally announced December 2018.

Comments: 21 pages, 7 figures

Journal ref: 2D Materials, 6, 014001, 2019

Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well

Authors: E. B. Olshanetsky, Z. D. Kvon, M. V. Entin, L. I. Magarill, A. Levin, G. M. Gusev, N. N. Mikhailov

Abstract: The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18-21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components - diffusion and phonon drag and that the second component is several times larger than the first. It has been concluded that the electron-hole sca… ▽ More The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18-21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components - diffusion and phonon drag and that the second component is several times larger than the first. It has been concluded that the electron-hole scattering plays an important role in both mechanisms of the thermopower. △ Less

Submitted 19 December, 2018; originally announced December 2018.

Journal ref: JETP Lett. 107, 789 (2018)

High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures

Authors: S. Hubmann, G. V. Budkin, A. P. Dmitriev, S. Gebert, V. V. Belkov, E. L. Ivchenko, S. Baumann, M. Otteneder, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show t… ▽ More We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency $ω=2πf$ is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7\,nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from $f=0.6$ to 1.07\,THz and intensities up to hundreds of kW/cm$^2$. We demonstrate that the probability of the impact ionization is proportional to the exponential function, $\exp(-E_0^2/E^2)$, of the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. The effect is observable in a wide temperature range from 4.2 to 90\,K, with the characteristic field increasing with rising temperature. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 085312 (2019)

Topological surface states in thick partially relaxed HgTe film

Authors: M. L. Savchenko, D. A. Kozlov, N. N. Vasilev, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, A. V. Kolesnikov

Abstract: Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films demonstrate a variety of subtle physical effects. The strain leads to a bulk band gap but limits a maximum HgTe strained film thickness, and therefore, the majority o… ▽ More Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films demonstrate a variety of subtle physical effects. The strain leads to a bulk band gap but limits a maximum HgTe strained film thickness, and therefore, the majority of experiments were performed on films with a thickness of less than 100 nm. Since a spatial separation of topological states is crucial for the study of a single-surface response, it is essential to increase the HgTe thickness further. In this work, by combining transport measurements together with capacitance spectroscopy, we perform an analysis of a 200-nm partially relaxed HgTe film. The Drude fit of the classical magnetotransport reveals the ambipolar electron-hole transport with a high electron mobility. A detailed analysis of Shubnikov-de Haas oscillations in both conductivity and capacitance allows us to distinguish three groups of electrons, identified as electrons on top and bottom surfaces and bulk electrons. The indirect bulk energy gap value is found to be close to zero. It is established that the significant gap decrease does not affect the surface states, which are found to be well resolved and spin nondegenerate. The presented techniques allow investigations of other three-dimensional TIs, regardless of the presence of bulk conductivity. △ Less

Submitted 14 May, 2019; v1 submitted 8 November, 2018; originally announced November 2018.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 99, 195423 (2019)

Vorticity induced negative nonlocal resistance in viscous two-dimensional electron system

Authors: A. D. Levin, G. M. Gusev, E. V. Levinson, Z. D. Kvon, A. K. Bakarov

Abstract: We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron… ▽ More We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron flow. We use the different nonlocal transport geometries and compare the results with a theory demonstrating the significance of hydrodynamics in mesoscopic samples. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: 8 pages, 9 figures

Journal ref: Phys. Rev. B, v.97, 245308 (2018)

Spin splitting of surface states in HgTe quantum wells

Authors: A. A. Dobretsova, Z. D. Kvon, S. S. Krishtopenko, N. N. Mikhailov, S. A. Dvoretsky

Abstract: We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference dN_s in two concentrations as a function of the gate voltage is qualitatively ex… ▽ More We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference dN_s in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of dN_s are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrodinger equations with eight-band kp Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of $H1$ states hybridized with the heavy-hole band. △ Less

Submitted 15 October, 2018; v1 submitted 15 October, 2018; originally announced October 2018.

Comments: 7 pages, 7 figures

Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells

Authors: M. Otteneder, I. A. Dmitriev, S. Candussio, M. L. Savchenko, D. A. Kozlov, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other… ▽ More We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 98, 245304 (2018)

Spin mixing between subbands and extraordinary Landau levels shift in wide HgTe quantum wells

Authors: A. A. Dobretsova, A. D. Chepelianskii, N. N. Mikhailov, Z. D. Kvon

Abstract: We present both the experimental and theoretical investigation of a non-trivial electron Landau levels shift in magnetic field in wide ~20 nm HgTe quantum wells: Landau levels split under magnetic fields but become degenerate again when magnetic field increases. We reproduced this behavior qualitatively within an isotropic 6-band Kane model, then using semiclassical calculations we showed this beh… ▽ More We present both the experimental and theoretical investigation of a non-trivial electron Landau levels shift in magnetic field in wide ~20 nm HgTe quantum wells: Landau levels split under magnetic fields but become degenerate again when magnetic field increases. We reproduced this behavior qualitatively within an isotropic 6-band Kane model, then using semiclassical calculations we showed this behavior is due to the mixing of the conduction band with total spin 3/2 with the next well subband with spin 1/2 which reduces the average vertical spin from 3/2 to around 1. This change of the average spin changes the Berry phase explaining the evolution of Landau levels under magnetic field. △ Less

Submitted 15 October, 2018; v1 submitted 22 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 155310 (2018)

Giant terahertz photoconductance of tunneling point contacts

Authors: M. Otteneder, Z. D. Kvon, O. A. Tkachenko, V. A. Tkachenko, A. S. Jaroshevich, E. E. Rodyakina, A. V. Latyshev, S. D. Ganichev

Abstract: We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2… ▽ More We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2 results in two orders of magnitude enhancement of the QPC conductance. The effect has a superlinear intensity dependence and increases with the dark conductivity decrease. It is also characterized by strong polarization and frequency dependencies. We demonstrate that all experimental findings can be well explained by the photon-mediated tunneling through the QPC. Corresponding calculations are in a good agreement with the experiment. △ Less

Submitted 21 December, 2017; originally announced December 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. Applied 10, 014015 (2018)

Two dimensional topological insulator in quantizing magnetic fields

Authors: E. B. Olshanetsky, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at $B\approx 6$ T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI pers… ▽ More The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at $B\approx 6$ T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field $B_c$ after which a gap opens up in the 2D TI spectrum. △ Less

Submitted 6 December, 2017; originally announced December 2017.

Comments: 5 pages, 4 figures

Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

Authors: V. A. Prudkoglyad, E. B. Olshanetsky, Z. D. Kvon, V. M. Pudalov, N. N. Michailov, S. A. Dvoretsky

Abstract: We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is well described by the two-band semiclassical model.In contrast, at elevated pressure, we observed non-monotonic pressure dependence of resistivity at CNP. For p… ▽ More We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is well described by the two-band semiclassical model.In contrast, at elevated pressure, we observed non-monotonic pressure dependence of resistivity at CNP. For pressures lower than $\approx9$ kbar, resistivity grows with pressure, in accord with expectations from the band structure calculations and the model incorporating effects of disorder on transport in 2D semimetals with indirect band overlap. For higher pressures, the resistivity saturates and starts decreasing upon further increase of pressure. Above $\approx14$ kbar the resistance and hop** transport character sharply change, which may indicate formation of the excitonic insulator state. The data also reveals strong influence of disorder on transport in 2D electron-hole system with a small band overlap. △ Less

Submitted 12 December, 2017; v1 submitted 5 December, 2017; originally announced December 2017.

Comments: 11 pages, 13 figures

Journal ref: Phys. Rev. B 98, 155437 (2018)

Ballistic geometric resistance resonances in a single surface of a topological insulator

Authors: Hubert Maier, Johannes Ziegler, Ralf Fischer, Dmitriy Kozlov, Ze Don Kvon, Nikolay Mikhailov, Sergey A. Dvoretsky, Dieter Weiss

Abstract: Transport in topological matter has shown a variety of novel phenomena over the last decade. Although numerous transport studies have been conducted on three-dimensional topological insulators (3D-TIs), study of ballistic motion and thus exploration of potential landscapes on a hundred nanometer scale is for the prevalent TI materials almost impossible due to their low carrier mobility. Therefore… ▽ More Transport in topological matter has shown a variety of novel phenomena over the last decade. Although numerous transport studies have been conducted on three-dimensional topological insulators (3D-TIs), study of ballistic motion and thus exploration of potential landscapes on a hundred nanometer scale is for the prevalent TI materials almost impossible due to their low carrier mobility. Therefore it is unknown whether helical Dirac electrons in TIs, bound to interfaces between topologically distinct materials, can be manipulated on the nanometer scale by local gates or locally etched regions. Here we impose a submicron periodic potential onto a single surface of Dirac electrons in high mobility strained mercury telluride (HgTe), which is a strong TI. Pronounced geometric resistance resonances constitute the first observation of a ballistic effect in 3D-TIs. △ Less

Submitted 25 August, 2017; originally announced August 2017.

Probing Spin Helical Surface States in Topological HgTe Nanowires

Authors: Johannes Ziegler, Raphael Kozlovsky, Cosimo Gorini, Ming-Hao Liu, Sabine Weishäupl, Hubert Maier, Ralf Fischer, Dmitriy A. Kozlov, Ze Don Kvon, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Klaus Richter, Dieter Weiss

Abstract: Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed p… ▽ More Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed preserve the topological nature of the surface states, that moreover extend phase-coherently across the entire wire geometry. The phase-coherence lengths are enhanced up to 5 $μ$m when tuning the wires into the bulk gap, so as to single out topological transport. The nanowires exhibit distinct conductance oscillations, both as a function of the flux due to an axial magnetic field, and of a gate voltage. The observed $h/e$-periodic Aharonov-Bohm-type modulations indicate surface-mediated quasi-ballistic transport. Furthermore, an in-depth analysis of the scaling of the observed gate-dependent conductance oscillations reveals the topological nature of these surface states. To this end we combined numerical tight-binding calculations of the quantum magneto-conductance with simulations of the electrostatics, accounting for the gate-induced inhomogenous charge carrier densities around the wires. We find that helical transport prevails even for strongly inhomogenous gating and is governed by flux-sensitive high-angular momentum surface states that extend around the entire wire circumference. △ Less

Submitted 11 December, 2017; v1 submitted 23 August, 2017; originally announced August 2017.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 97, 035157 (2018)

Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance

Authors: A. M. Shuvaev, V. Dziom, N. N. Mikhailov, Z. D. Kvon, Y. Shao, D. N. Basov, A. Pimenov

Abstract: Knowing the band structure of materials is one of the prerequisites to understand their properties. Therefore, especially in the last decades, angle-resolved photoemission spectroscopy (ARPES) has become a highly demanded experimental tool to investigate the band structure. However, especially in thin film materials with a layered structure and several cap** layers, access to the electronic stru… ▽ More Knowing the band structure of materials is one of the prerequisites to understand their properties. Therefore, especially in the last decades, angle-resolved photoemission spectroscopy (ARPES) has become a highly demanded experimental tool to investigate the band structure. However, especially in thin film materials with a layered structure and several cap** layers, access to the electronic structure by ARPES is limited. Therefore, several alternative methods to obtain the required information have been suggested. Here, we directly invert the results by cyclotron resonance experiments to obtain the band structure of a two-dimensional (2D) material. This procedure is applied to the mercury telluride quantum well with critical thickness which is characterized by a 2D electron gas with linear dispersion relations. The Dirac-like band structure in this material could be mapped both on the electron and on the hole side of the band diagram. In this material, purely linear dispersion of the hole-like carriers is in contrast to detectable quadratic corrections for the electrons. △ Less

Submitted 2 August, 2017; originally announced August 2017.

Comments: 18 pages, 6 figures

Journal ref: Phys. Rev. B 96, 155434 (2017)

Robust helical edge transport at $ν=0$ quantum Hall state

Authors: G. M. Gusev, D. A. Kozlov, A. D. Levin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: Among the most interesting predictions in two-dimensional materials with a Dirac cone is the existence of the zeroth Landau level (LL), equally filled by electrons and holes with opposite chirality. The gapless edge states with helical spin structure emerge from Zeeman splitting at the LL filling factor $ν=0$ gapped quantum Hall state. We present observations of a giant nonlocal four-terminal tran… ▽ More Among the most interesting predictions in two-dimensional materials with a Dirac cone is the existence of the zeroth Landau level (LL), equally filled by electrons and holes with opposite chirality. The gapless edge states with helical spin structure emerge from Zeeman splitting at the LL filling factor $ν=0$ gapped quantum Hall state. We present observations of a giant nonlocal four-terminal transport in zero-gap HgTe quantum wells at the $ν=0$ quantum Hall state. Our experiment clearly demonstrates the existence of the robust helical edge state in a system with single valley Dirac cone materials. △ Less

Submitted 24 July, 2017; originally announced July 2017.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B,v.96, 045304, 2017

Magneto-resistance oscillations induced by high-intensity terahertz radiation

Authors: T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Bel'kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiment… ▽ More We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 96, 115449 (2017)

Edge States in Lateral p-n Junctions in Inverted Band HgTe Quantum Wells

Authors: S. U. Piatrusha, V. S. Khrapai, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, E. S. Tikhonov

Abstract: We investigate lateral p-n junctions, electrostatically defined in 14 nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junctions resistances are close to $h/2e^2$, consistent with some previous experiments on 8-10 nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are per… ▽ More We investigate lateral p-n junctions, electrostatically defined in 14 nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junctions resistances are close to $h/2e^2$, consistent with some previous experiments on 8-10 nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion can not be drawn based on the present experiment. Our approach looks promising for the study of short quasi-ballistic edges in topological insulators (TIs) in suitable geometry. △ Less

Submitted 24 October, 2017; v1 submitted 28 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 96, 245417 (2017)

Universal Faraday rotation in HgTe wells with critical thickness

Authors: A. Shuvaev, V. Dziom, Z. D. Kvon, N. N. Mikhailov, A. Pimenov

Abstract: The universal value of Faraday rotation angle close to the fine structure constant is experimentally observed in thin HgTe quantum wells with thickness on the border between trivial insulating and the topologically non-trivial Dirac phases. The quantized value of the Faraday angle remains robust in the broad range of magnetic fields and gate voltages. Dynamic Hall conductivity of the hole-like car… ▽ More The universal value of Faraday rotation angle close to the fine structure constant is experimentally observed in thin HgTe quantum wells with thickness on the border between trivial insulating and the topologically non-trivial Dirac phases. The quantized value of the Faraday angle remains robust in the broad range of magnetic fields and gate voltages. Dynamic Hall conductivity of the hole-like carriers extracted from the analysis of the transmission data shows theoretically predicted universal value of consistent with the doubly degenerate Dirac state. On shifting the Fermi level by the gate voltage the effective sign of the charge carriers changes from positive (holes) to negative (electrons). The electron-like part of the dynamic response does not show quantum plateaus and is well described within the classical Drude model. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Journal ref: PRL 117, 117401 (2016)