Showing 1–10 of 10 results for author: Kutuvantavida, Y

Hybrid Electro-Optic Modulator Combining Silicon Photonic Slot Waveguides with High-k Radio-Frequency Slotlines

Authors: Sandeep Ummethala, Juned N. Kemal, Ahmed S. Alam, Matthias Lauermann, Yasar Kutuvantavida, Sree H. Nandam, Lothar Hahn, Delwin L. Elder, Larry R. Dalton, Thomas Zwick, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usua… ▽ More Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leading to inherent RC-limitations of the modulation bandwidth. In this paper, we show that these limitations can be overcome by extending the slot-waveguide concept to the modulating radio-frequency (RF) signal. Our device combines an RF slotline that relies on BaTiO3 as a high-k dielectric material with a conventional silicon photonic slot waveguide and a highly efficient organic EO cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm-long Mach-Zehnder modulator that offers a 3 dB-bandwidth of 76 GHz and a 6 dB-bandwidth of 110 GHz along with a small π-voltage of 1.3 V (UπL = 1.3 V mm). To the best of our knowledge, this represents the largest EO bandwidth so far achieved with a silicon photonic modulator based on dielectric waveguides. We further demonstrate the viability of the device in a data transmission experiment using four-state pulse-amplitude modulation (PAM4) at line rates up to 200 Gbit/s. Our first-generation devices leave vast room for further improvement and may open an attractive route towards highly efficient silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V drive voltages and modulation bandwidths of more than 100 GHz. △ Less

Submitted 20 October, 2020; originally announced November 2020.

Comments: 8 pages main paper, 7 pages supplementary info, 11 figures

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 GBd PAM4 Signaling With Sub-1 dB Phase-Shifter Loss

Authors: Clemens Kieninger, Christoph Füllner, Heiner Zwickel, Yasar Kutuvantavida, Juned N. Kemal, Carsten Eschenbaum, Delwin L. Elder, Larry R. Dalton, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keyin… ▽ More We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7 % coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM. △ Less

Submitted 19 February, 2020; originally announced February 2020.

A verified equivalent-circuit model for slotwaveguide modulators

Authors: Heiner Zwickel, Stefan Singer, Clemens Kieninger, Yasar Kutuvantavida, Narek Muradyan, Thorsten Wahlbrink, Shiyoshi Yokoyama, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF tr… ▽ More We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators. △ Less

Submitted 10 December, 2019; originally announced January 2020.

Hybrid 2D/3D photonic integration for non-planar circuit topologies

Authors: Aleksandar Nesic, Matthias Blaicher, Tobias Hoose, Andreas Hofmann, Matthias Lauermann, Yasar Kutuvantavida, Martin Nöllenburg, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: Complex photonic integrated circuits (PIC) may have strongly non-planar topologies that require waveguide crossings (WGX) when realized in single-layer integration platforms. The number of WGX increases rapidly with the complexity of the circuit, in particular when it comes to highly interconnected optical switch topologies. Here, we present a concept for WGX-free PIC that rely on 3D-printed freef… ▽ More Complex photonic integrated circuits (PIC) may have strongly non-planar topologies that require waveguide crossings (WGX) when realized in single-layer integration platforms. The number of WGX increases rapidly with the complexity of the circuit, in particular when it comes to highly interconnected optical switch topologies. Here, we present a concept for WGX-free PIC that rely on 3D-printed freeform waveguide overpasses (WOP). We experimentally demonstrate the viability of our approach using the example of a $4 \times 4$ switch-and-select (SAS) circuit realized on the silicon photonic platform. We further present a comprehensive graph-theoretical analysis of different $n \times n$ SAS circuit topologies. We find that for increasing port counts $n$ of the SAS circuit, the number of WGX increases with $n^4$, whereas the number of WOP increases only in proportion to $n^2$. △ Less

Submitted 24 January, 2019; originally announced January 2019.

Comments: 22 pages, 8 figures

Journal ref: Optics Express Vol. 27, Issue 12, pp. 17402-17425 (2019)

THz-to-Optical Conversion in Wireless Communications Using an Ultra-Broadband Plasmonic Modulator

Authors: Sandeep Ummethala, Tobias Harter, Kira Koehnle, Zheng Li, Sascha Muehlbrandt, Yasar Kutuvantavida, Juned Kemal, Jochen Schaefer, Axel Tessmann, Suresh Kumar Garlapati, Andreas Bacher, Lothar Hahn, Martin Walther, Thomas Zwick, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the relia… ▽ More Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams between the THz and the optical domains. Here, we report on the first demonstration of a THz link that is seamlessly integrated into a fiber-optic network using direct terahertz-to-optical (T/O) conversion at the wireless receiver. We exploit an ultra-broadband silicon-plasmonic modulator having a 3 dB bandwidth in excess of 0.36 THz for T/O conversion of a 50 Gbit/s data stream that is transmitted on a 0.2885 THz carrier over a 16 m-long wireless link. Optical-to-terahertz (O/T) conversion at the wireless transmitter relies on photomixing in a uni-travelling-carrier photodiode. △ Less

Submitted 6 November, 2018; originally announced December 2018.

Comments: 7 pages Main Paper + 10 pages Supplementary Information

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Authors: Heiner Zwickel, Juned N. Kemal, Clemens Kieninger, Yasar Kutuvantavida, Jonas Rittershofer, Matthias Lauermann, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combine… ▽ More Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments. △ Less

Submitted 15 July, 2019; v1 submitted 30 July, 2018; originally announced September 2018.

Demonstration of long-term thermally stable Silicon-Organic Hybrid Modulators at 85 °C

Authors: Clemens Kieninger, Yasar Kutuvantavida, Hiroki Miura, Juned N. Kemal, Heiner Zwickel, Feng Qiu, Matthias Lauermann, Wolfgang Freude, Sebastian Randel, Shiyoshi Yokoyama, Christian Koos

Abstract: We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a c… ▽ More We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the π-voltage of the modulators increases on average by less than 15 % if we store the devices for additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Journal ref: Opt. Express 26 (2018) 27955-27964

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Authors: Stefan Wolf, Heiner Zwickel, Clemens Kieninger, Matthias Lauermann, Wladislaw Hartmann, Yasar Kutuvantavida, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter d… ▽ More We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit. △ Less

Submitted 19 September, 2017; originally announced October 2017.

Ultra-High Electro-Optic Activity Demonstrated in a Silicon-Organic Hybrid (SOH) Modulator

Authors: Clemens Kieninger, Yasar Kutuvantavida, Delwin L. Elder, Stefan Wolf, Heiner Zwickel, Matthias Blaicher, Juned N. Kemal, Matthias Lauermann, Sebastian Randel, Wolfgang Freude, Larry R. Dalton, Christian Koos

Abstract: Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JR… ▽ More Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vμm - the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonic-electronic signal processing. △ Less

Submitted 23 April, 2018; v1 submitted 19 September, 2017; originally announced September 2017.

Comments: 9 pages, 4 figures

Journal ref: Optica 5 (2018) 739-748

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying

Authors: Stefan Wolf, Heiner Zwickel, Wladislaw Hartmann, Matthias Lauermann, Yasar Kutuvantavida, Clemens Kieninger, Lars Altenhain, Rolf Schmid, **gdong Luo, Alex K. -Y. Jen, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfec… ▽ More Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a π-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates. △ Less

Submitted 12 September, 2017; v1 submitted 1 September, 2017; originally announced September 2017.