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Quasi-continuous transition from a Fermi liquid to a spin liquid
Authors:
Tetsuya Furukawa,
Kazuhiko Kobashi,
Yosuke Kurosaki,
Kazuya Miyagawa,
Kazushi Kanoda
Abstract:
The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory. Recent theoretical works, however, suggest that the transition is continuous if the Mott insulator carries an exotic spin liquid with a spinon Fermi surface. Here, w…
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The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory. Recent theoretical works, however, suggest that the transition is continuous if the Mott insulator carries an exotic spin liquid with a spinon Fermi surface. Here, we demonstrate the case of a quasi-continuous Mott transition from a Fermi liquid to a spin liquid in an organic triangular-lattice system k-(ET)2Cu2(CN)3. Transport experiments performed under fine pressure tuning find that, as the Mott transition is approached, the Fermi-liquid coherence temperature continuously falls to the scale of kelvins with divergent quasi-particle decay rate in the metal side and the charge gap gradually closes in the insulator side. The Clausius-Clapeyron analysis of the pressure-temperature phase diagram provides thermodynamic evidence for the extremely weak first-order nature of the Mott transition. These results suggest that the spin liquid hosts a spinon Fermi surface, which turns into an electron Fermi surface when charges are Mott delocalized.
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Submitted 18 July, 2017;
originally announced July 2017.
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Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
Authors:
H. Reichlova,
V. Novak,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
M. Marysko,
J. Wunderlich,
X. Marti,
T. Jungwirth
Abstract:
We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate…
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We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.
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Submitted 31 July, 2016;
originally announced August 2016.
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Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks
Authors:
X. Marti,
B. G. Park,
J. Wunderlich,
H. Reichlova,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
T. Jungwirth
Abstract:
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the…
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We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet.
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Submitted 10 August, 2011;
originally announced August 2011.
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Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve
Authors:
B. G. Park,
J. Wunderlich,
X. Marti,
V. Holy,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
A. B. Shick,
T. Jungwirth
Abstract:
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the de…
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Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement.
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Submitted 14 November, 2010;
originally announced November 2010.
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Field-induced staggered magnetic moment in the quasi-two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl
Authors:
F. Kagawa,
Y. Kurosaki,
K. Miyagawa,
K. Kanoda
Abstract:
We investigated the magnetism under a magnetic field in the quasi-two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl through magnetization and $^{13}$C-NMR measurements. We found that in the nominally paramagnetic phase (i.e., above Néel temperature) the field-induced local moments have a staggered component perpendicular to the applied field. As a result, the antiferro…
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We investigated the magnetism under a magnetic field in the quasi-two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl through magnetization and $^{13}$C-NMR measurements. We found that in the nominally paramagnetic phase (i.e., above Néel temperature) the field-induced local moments have a staggered component perpendicular to the applied field. As a result, the antiferromagnetic transition well defined at a zero field becomes crossover under a finite field. This unconventional behavior is qualitatively reproduced by the molecular-field calculation for Hamiltonian including the exchange, Dzyaloshinsky-Moriya (DM), and Zeeman interactions. This calculation also explains other unconventional magnetic features in $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl reported in the literature. The present results highlight the importance of the DM interaction in field-induced magnetism in a nominally paramagnetic phase, especially in low-dimensional spin systems.
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Submitted 9 February, 2009;
originally announced February 2009.
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On the superconducting state of the organic conductor $(TMTSF)_2ClO_4$
Authors:
J. Shinagawa,
Y. Kurosaki,
F. Zhang,
C. Parker,
S. E. Brown,
D. Jerome,
J. B. Christensen,
K. Bechgaard
Abstract:
$(TMTSF)_2ClO_4$ is a quasi-one dimensional organic conductor and superconductor with $T_c=1.4$K, and one of at least two Bechgaard salts observed to have upper critical fields far exceeding the paramagnetic limit. Nevertheless, the $^{77}$Se NMR Knight shift at low fields reveals a decrease in spin susceptibility $χ_s$ consistent with singlet spin pairing. The field dependence of the spin-latti…
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$(TMTSF)_2ClO_4$ is a quasi-one dimensional organic conductor and superconductor with $T_c=1.4$K, and one of at least two Bechgaard salts observed to have upper critical fields far exceeding the paramagnetic limit. Nevertheless, the $^{77}$Se NMR Knight shift at low fields reveals a decrease in spin susceptibility $χ_s$ consistent with singlet spin pairing. The field dependence of the spin-lattice relaxation rate at 100mK exhibits a sharp crossover (or phase transition) at a field $H_s\sim15$kOe, to a regime where $χ_s$ is close to the normal state value, even though \hc2 $\gg H_s$.
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Submitted 3 April, 2007; v1 submitted 23 January, 2007;
originally announced January 2007.
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NMR evidence for very slow carrier density fluctuations in the organic metal (TMTSF)$_2$ClO$_4$
Authors:
F. Zhang,
Y. Kurosaki,
J. Shinagawa,
B. Alavi,
S. E. Brown
Abstract:
We have investigated the origin of the large increase in spin-echo decay rates for the $^{77}$Se nuclear spins at temperatures near to $T=30K$ in the organic superconductor (TMTSF)$_2$ClO$_4$. The measured angular dependence of $T_2^{-1}$ demonstrates that the source of the spin-echo decays lies with carrier density fluctuations rather than fluctuations in TMTSF molecular orientation. The very l…
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We have investigated the origin of the large increase in spin-echo decay rates for the $^{77}$Se nuclear spins at temperatures near to $T=30K$ in the organic superconductor (TMTSF)$_2$ClO$_4$. The measured angular dependence of $T_2^{-1}$ demonstrates that the source of the spin-echo decays lies with carrier density fluctuations rather than fluctuations in TMTSF molecular orientation. The very long time scales are directly associated with the dynamics of the anion ordering occurring at $T=25K$, and the inhomogeneously broadened spectra at lower temperatures result from finite domain sizes. Our results are similar to observations of line-broadening effects associated with charge-ordering transitions in quasi-two dimensional organic conductors.
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Submitted 19 April, 2005;
originally announced April 2005.
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Mott Transition from a Spin Liquid to a Fermi Liquid in the Spin-Frustrated Organic Conductor kappa-(ET)2Cu2(CN)3
Authors:
Y. Kurosaki,
Y. Shimizu,
K. Miyagawa,
K. Kanoda,
G. Saito
Abstract:
Pressure-temperature phase diagram of the organic Mott insulator $κ$-(ET)$_2$Cu$_2$(CN)$_3$, a model system of the spin liquid on triangular lattice, has been investigated by $^1$H NMR and resistivity measurements. The spin-liquid phase is persistent before the Mott transition to the metal or superconducting phase under pressure. At the Mott transition, the spin fluctuations are rapidly suppress…
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Pressure-temperature phase diagram of the organic Mott insulator $κ$-(ET)$_2$Cu$_2$(CN)$_3$, a model system of the spin liquid on triangular lattice, has been investigated by $^1$H NMR and resistivity measurements. The spin-liquid phase is persistent before the Mott transition to the metal or superconducting phase under pressure. At the Mott transition, the spin fluctuations are rapidly suppressed and the Fermi-liquid features are observed in the temperature dependence of the spin-lattice relaxation rate and resistivity. The characteristic curvature of Mott boundary in the phase diagram highlights a crucial effect of the spin frustration on the Mott transition.
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Submitted 19 October, 2005; v1 submitted 12 April, 2005;
originally announced April 2005.
