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Fundamental Crystal Field Excitations in Magnetic Semiconductor SnO$_2$:Mn,Fe,Co,Ni
Authors:
B. Leedahl,
D. J. McCloskey,
D. W. Boukhvalov,
I. S. Zhidkov,
A. I. Kukharenko,
E. Z. Kurmaev,
S. O. Cholakh,
N. V. Gavrilov,
V. I. Brinzari,
A. Moewes
Abstract:
Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO$_2$. The crystal field splittings are compared to resonant inelastic x-ray scattering (RIXS) exp…
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Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO$_2$. The crystal field splittings are compared to resonant inelastic x-ray scattering (RIXS) experiments, which measure precisely these elementary $dd$ excitations. The origin of spectral features can be determined and identified via this comparison, leading to an increased understanding of how such dopant metals situate themselves in, and modify the host's electronic and magnetic properties; and also how each element differs when incorporated into other semiconducting materials. We found that oxygen vacancy formation must not occur at nearest neighbour sites to metal atoms, but instead must reside at least two coordination spheres beyond. The coordination of the dopants within the host can then be explicitly related to the $d$-electron configurations and energies. This approach facilitates an understanding of the essential link between local crystal coordination and electronic/magnetic properties.
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Submitted 7 August, 2019;
originally announced August 2019.
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XPS evidence of degradation mechanism in hybrid halide perovskites
Authors:
I. S. Zhidkov,
A. I. Poteryaev,
A. Kukharenko,
L. D. Finkelstein,
S. O. Cholakh,
A. F. Akbulatov,
P. A. Troshin,
C. -C. Chueh,
E. Z. Kurmaev
Abstract:
The paper presents the results of measurements of XPS valence band spectra of SiO2/MAPbI3 hybrid perovskites subjected to irradiation with visible light and annealing at an exposure of 0-1000 hours. It is found from XPS survey spectra that in both cases (irradiation and annealing) a decrease in the I:Pb ratio is observed with aging time, which unambiguously indicates PbI2 phase separation as a pho…
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The paper presents the results of measurements of XPS valence band spectra of SiO2/MAPbI3 hybrid perovskites subjected to irradiation with visible light and annealing at an exposure of 0-1000 hours. It is found from XPS survey spectra that in both cases (irradiation and annealing) a decrease in the I:Pb ratio is observed with aging time, which unambiguously indicates PbI2 phase separation as a photo and thermal product of degradation. The comparison of the XPS valence band spectra of irradiated and annealed perovskites with density functional theory calculations of the MAPbI3 and PbI2 compounds have shown a systematic decrease in the contribution of I 5p-states and allowed us to determine the threshold for degradation, which is 500 hours for light irradiation and 200 hours for annealing.
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Submitted 21 June, 2019;
originally announced June 2019.
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Atomic and electronic structure of graphene oxide/Cu interface
Authors:
Danil W. Boukhvalov,
Ernst Z. Kurmaev,
Ewelina Urbańczyk,
Grzegorz Dercz,
Agnieszka Stolarczyk,
Wojciech Simka,
Andrey I. Kukharenko,
Ivan S. Zhidkov,
Anatoly I. Slesarev,
Anatoly F. Zatsepin,
Seif O. Cholakh
Abstract:
The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized c…
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The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substrate. OSEE measurements evidence the presence of copper oxide phase in the systems simultaneously with the absence of contributions from GO with corresponding energy gap. All measurements demonstrate the similarity of the results for different thickness of GO cover of the copper surface. Theoretical modeling demonstrates favorability of migration of oxygen-containing functional groups from GO to the copper substrate only for the case of C/O ratio below two and formation of Cu-O-C bonds between substrate and GO simultaneously with the vanishing of the energy gap in GO layer. Basing on results of experimental measurements and theoretical calculations we suggest the model of atomic structure for Cu/GO interface as Cu/CuO/GO with C/O ratio in gapless GO about two.
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Submitted 3 September, 2018;
originally announced September 2018.
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Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies
Authors:
D. W. Boukhvalov,
I. S. Zhidkov,
A. I. Kukharenko,
A. I. Slesarev,
A. F. Zatsepin,
S. O. Cholakh,
E. Z. Kurmaev
Abstract:
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of…
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Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.
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Submitted 7 February, 2018;
originally announced February 2018.
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Electronic structure, charge transfer, and intrinsic luminescence of gadolinium oxide nanoparticles: Experiment and theory
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
A. F. Zatsepin,
Yu. A. Kuznetsova,
M. A. Mashkovtsev,
V. N. Rychkov,
V. Ya. Shur,
A. A. Esin,
E. Z. Kurmaev
Abstract:
The cubic (c) and monoclinic (m) polymorphs of Gd2O3 were studied using the combined analysis of several materials science techniques - X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. Density functional theory (DFT) based calculations for the samples under study were performed as well. The cubic phase of…
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The cubic (c) and monoclinic (m) polymorphs of Gd2O3 were studied using the combined analysis of several materials science techniques - X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. Density functional theory (DFT) based calculations for the samples under study were performed as well. The cubic phase of gadolinium oxide (c-Gd2O3) synthesized using a precipitation method exhibits spheroidal-like nanoclusters with well-defined edges assembled from primary nanoparticles with an average size of 50 nm, whereas the monoclinic phase of gadolinium oxide (m-Gd2O3) deposited using explosive pyrolysis has a denser structure compared with natural gadolinia. This phase also has a structure composed of three-dimensional complex agglomerates without clear-edged boundaries that are ~21 nm in size plus a cubic phase admixture of only 2 at. % composed of primary edge-boundary nanoparticles ~15 nm in size. These atomic features appear in the electronic structure as different defects ([Gd...O-OH] and [Gd...O-O]) and have dissimilar contributions to the charge-transfer processes among the appropriate electronic states with ambiguous contributions in the Gd 5p - O 2s core-like levels in the valence band structures. The origin of [Gd...O-OH] defects found by XPS was well-supported by PL analysis. The electronic and atomic structures of the synthesized gadolinias calculated using DFT were compared and discussed on the basis of the well-known joint OKT-van der Laan model, and good agreement was established.
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Submitted 11 December, 2017;
originally announced December 2017.
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Atomic and electronic structures of stable linear carbon chains on Ag-nanoparticles
Authors:
D. W. Boukhvalov,
I. S. Zhidkov,
E. Z. Kurmaev,
E. Fazio,
S. O. Cholakh,
L. D'Urso
Abstract:
In this work, we report X-ray photoelectron (XPS) and valence band (VB) spectroscopy measurements of surfactant-free silver nanoparticles and silver/linear carbon chains (Ag@LCC) structures prepared by pulse laser ablation (PLA) in water. Our measurements demonstrate significant oxidation only on the surfaces of the silver nanoparticles with many covalent carbon-silver bonds but only negligible tr…
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In this work, we report X-ray photoelectron (XPS) and valence band (VB) spectroscopy measurements of surfactant-free silver nanoparticles and silver/linear carbon chains (Ag@LCC) structures prepared by pulse laser ablation (PLA) in water. Our measurements demonstrate significant oxidation only on the surfaces of the silver nanoparticles with many covalent carbon-silver bonds but only negligible traces of carbon-oxygen bonds. Theoretical modeling also provides evidence of the formation of robust carbon-silver bonds between linear carbon chains and pure and partially oxidized silver surfaces. A comparison of theoretical and experimental electronic structures also provides evidence of the presence of non-oxidized linear carbon chains on silver surfaces. To evaluate the chemical stability, we investigated the energetics of the physical adsorption of oxidative species (water and oxygen) and found that this adsorption is much preferrable on oxidized or pristine silver surfaces than the adsorption of linear carbon chains, which makes the initial step in the oxidation of LCC energetically unfavorable.
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Submitted 19 November, 2017;
originally announced November 2017.
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Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after
Authors:
D. W. Boukhvalov,
P. F. Bazylewski,
A. I. Kukharenko,
I. S. Zhidkov,
Yu. S. Ponosov,
E. Z. Kurmaev,
S. O. Cholakh,
Y. H. Lee,
G. S. Chang
Abstract:
We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interf…
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We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed.
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Submitted 30 July, 2017;
originally announced July 2017.
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Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
A. F. Zatsepin,
S. S. Kim,
N. V. Gavrilov,
I. S. Zhidkov
Abstract:
The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band map**s. The results obtained were disc…
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The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band map**s. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS and DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-TiO2:[Cu+][Cu2+] for the bulk and Cx-TiO2:[Cu+][Cu0] for thin-films. It was demonstrated the in the mode of heavy carbon-loadings the remaining majority of neutral C-C bonds (sp3-type) is dominating and only a lack of embedded carbon is fabricating the O-C=O clusters. No valence base-band width altering was established after sequential carbon-copper modification of the atomic structure of initial TiO2-hosts except the dominating majority of Cu 3s states after Cu-sensitization. The crucial role of neutral carbon low-dimensional impurities as the precursors for the new phases growth was shown for Cu-sensitized Cx-TiO2 intermediate-state hosts.
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Submitted 19 July, 2017;
originally announced July 2017.
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XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO - the role of oxygen imperfections
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
N. V. Gavrilov,
E. Z. Kurmaev,
I. S. Zhidkov
Abstract:
An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band map** spectroscopy appl…
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An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band map** spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only "pure" Bi2O3-like phase nor the only "pure" Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established.
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Submitted 5 July, 2016;
originally announced July 2016.
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Pleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO2
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
N. V. Gavrilov,
S. S. Kim,
I. S. Zhidkov
Abstract:
The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-do** of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-…
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The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-do** of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-levels and valence bands) and Density-Functional Theory (DFT) calculations were employed in order to study the electronic structure of Bi-ion implanted TiO2 samples. According to XPS data obtained and DFT calculations, the Bi -> Ti cation substitution occurs in Bi-implanted bulk TiO2, whereas in the thin-film morphology of TiO2:Bi the Bi-atoms have metal-like clusters segregation tendency. Based on the combined XPS and DFT considerations the possible reasons and mechanism for the observed effects are discussed. It is believed that established peculiarities of bismuth embedding into employed TiO2 hosts are mostly the sequence of pleomorphic origin for the formed "bismuth-oxygen" chemical bonding.
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Submitted 18 April, 2016;
originally announced April 2016.
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Sn-loss effect in a Sn-implanted a-SiO2 host-matrix after thermal annealing: A combined XPS, PL, and DFT study
Authors:
D. A. Zatsepin,
A. F. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
N. V. Gavrilov
Abstract:
Amorphous a-SiO2 host-matrices were implanted with Sn-ions with and without posterior thermal tempering at 900 °C for 1 hour in ambient air. X-ray photoelectron spectroscopy analysis (XPS core-levels, XPS valence band map**), photoluminescence (PL) probing, and density functional calculations (DFT) were employed to enable a detailed electronic structure characterization of these samples. It was…
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Amorphous a-SiO2 host-matrices were implanted with Sn-ions with and without posterior thermal tempering at 900 °C for 1 hour in ambient air. X-ray photoelectron spectroscopy analysis (XPS core-levels, XPS valence band map**), photoluminescence (PL) probing, and density functional calculations (DFT) were employed to enable a detailed electronic structure characterization of these samples. It was experimentally established that the process of Sn-embedding into the a-SiO2 host occurs following two dissimilar trends: the Sn4+ -> Si4+ substitution in a-SiO2:Sn (without tempering), and Sn-metal clustering as interstitials in a-SiO2:Sn (900 °C, 1 hour). Both trends were modeled using calculated formation energies and partial densities of states (PDOS) as well as valence band (VB) simulations, which yielded evidence that substitutional defect generation occurs with the help of ion-implantation stimulated translocation of the host-atoms from their stoichiometric positions to the interstitial void. Experimental and theoretical data obtained coincide in terms of the reported Sn-loss effect in a-SiO2:Sn (900 °C, 1 hour) due to thermally-induced electronic host-structure re-arraignment, which manifests as backward host-atoms translocation into stoichiometric positions and the posterior formation of Sn-metal clusters.
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Submitted 14 January, 2016;
originally announced January 2016.
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Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In$_{1-x}$Fe$_x$)$_2$O$_3$
Authors:
R. J. Green,
T. Z. Regier,
B. Leedahl,
J. A. McLeod,
X. H. Xu,
G. S. Chang,
E. Z. Kurmaev,
A. Moewes
Abstract:
Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In$_2$O$_3$ films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the cr…
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Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In$_2$O$_3$ films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.
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Submitted 16 October, 2015;
originally announced October 2015.
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Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing
Authors:
D. A. Zatsepin,
A. F. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
Z. V. Pchelkina,
N. V. Gavrilov
Abstract:
The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable fo…
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The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, formation ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 0C (1 hr) strongly reduces the amount of ZnO nanoparticles and induces the formation of α-Zn2SiO4 phase which markedly enhances the green emission.
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Submitted 1 October, 2015;
originally announced October 2015.
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The characterization of Co-nanoparticles supported on graphene
Authors:
P. Bazylewski,
D. W. Boukhvalov,
A. I. Kukharenko,
E. Z. Kurmaev,
A. Hunt,
A. Moewes,
Y. H. Lee,
S. O. Cholakh,
G. S. Chang
Abstract:
The results of density functional theory calculations and measurements using X-ray photoelectron spectroscopy of Co-nanoparticles dispersed on graphene/Cu are presented. It is found that for low cobalt thickness (0.02 nm - 0.06 nm) the Co forms islands distributed non-homogeneously which are strongly oxidized under exposure to air to form cobalt oxides. At greater thicknesses up to 2 nm the upper…
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The results of density functional theory calculations and measurements using X-ray photoelectron spectroscopy of Co-nanoparticles dispersed on graphene/Cu are presented. It is found that for low cobalt thickness (0.02 nm - 0.06 nm) the Co forms islands distributed non-homogeneously which are strongly oxidized under exposure to air to form cobalt oxides. At greater thicknesses up to 2 nm the upper Co-layers are similarly oxidized whereas the lower layers contacting the graphene remain metallic. The measurements indicate a Co2+ oxidation state with no evidence of a 3+ state appearing at any Co thickness, consistent with CoO and Co[OH]2. The results show that thicker Co (2nm) coverage induces the formation of a protective oxide layer while providing the magnetic properties of Co nanoparticles.
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Submitted 2 September, 2015;
originally announced September 2015.
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Structural defects and electronic structure of N-ion implanted TiO2: bulk versus thin film
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
I. S. Zhidkov,
N. V. Gavrilov,
M. A. Korotin,
S. S. Kim
Abstract:
Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk samples experiment and theory demonstrate anion N->O substitution. For the thin films case experiments evidence valuable contributions from N2 and NO molecule-…
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Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk samples experiment and theory demonstrate anion N->O substitution. For the thin films case experiments evidence valuable contributions from N2 and NO molecule-like structures and theoretical modeling reveals a possibility of formation of these species as result of the appearance of interstitial nitrogen defects on the various surfaces of TiO2. Energetics of formation of oxygen vacancies and its key role for band gap reduction is also discussed.
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Submitted 28 July, 2015;
originally announced July 2015.
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Octahedral conversion of a-SiO2-host matrix by pulsed ion implantation
Authors:
D. A. Zatsepin,
A. F. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
N. V. Gavrilov,
N. A. Skorikov,
A. von Czarnowski,
H. -J. Fitting
Abstract:
This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E = 30 keV, D = 2*10^17 cm^-2) with respect to those of untr…
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This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E = 30 keV, D = 2*10^17 cm^-2) with respect to those of untreated a-SiO2.The similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion-implantation induces the local high pressure effect which leads to an appearance of SiO6-structural units in alpha-SiO2 host, forming "stishovite-like" local atomic structure. This process can be described within electronic bonding transition from the four-fold "quartz-like" to six-fold "stishovite-like" high-pressure phase in SiO2 host-matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D = 3*10^16 cm^-2.
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Submitted 26 May, 2015;
originally announced May 2015.
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XPS and DFT study of Sn incorporation into ZnO and TiO2 host matrices by pulsed ion implantation
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
I. S. Zhidkov,
S. S. Kim,
L. Cui,
N. V. Gavrilov,
S. O. Cholakh
Abstract:
Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxi…
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Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxide (Sn4+ -> Ti4+) for bulk and film morphologies. For TiO2 films, the implantation also led to occupation of interstitials by doped ions, which induced the clustering of substituted and embedded Sn atoms; this did not occur in ZnO:Sn film samples. Density functional theory (DFT) formation energies were calculated of various incorporation processes, explaining the prevalence of substitutional defects in both matrices. Possible mechanisms and reasons for the observed trends in Sn incorporation into the ZnO and TiO2 matrices are discussed.
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Submitted 5 May, 2015;
originally announced May 2015.
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Electronic structure and magnetic properties of graphene/Co composites
Authors:
I. S. Zhidkov,
N. A. Skorikov,
A. V. Korolev,
A. I. Kukharenko,
E. Z. Kurmaev,
V. E. Fedorov,
S. O. Cholakh
Abstract:
The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magneti…
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The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magnetic measurements which show the presence of the main (from the metal) and shifted (from the oxide) hysteresis loops. The presence of oxide layer on the metal surface prevents the metal from the full oxidation and (as shown by magnetic measurements) provides the preservation of ferromagnetic properties after long exposure in ambient air which enables the use of graphene/metal composites in spintronics devices.
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Submitted 14 November, 2014;
originally announced November 2014.
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Characterization of TiAlSiON Coatings Deposited by Plasma Enhanced Magnetron Sputtering: XRD, XPS, and DFT Studies
Authors:
A. S. Kamenetskih,
A. I. Kukharenko,
E. Z. Kurmaev,
N. A. Skorikov,
N. V. Gavrilov,
S. O. Cholakh,
A. V. Chukin,
V. M. Zainullina,
M. A. Korotin
Abstract:
The results of characterization of TiAlSiON hard coatings deposited on ferric-chromium AISI 430 stainless steel by plasma enhanced magnetron sputtering are presented. The coating with maximum hardness (of 45 GPa) was obtained at the following optimal values of elemental concentrations: Si ~5 at.%, Al ~15 at.%, and Ti ~27 at.%. The elastic modulus of the coating was 590 GPa. The reading of gaseous…
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The results of characterization of TiAlSiON hard coatings deposited on ferric-chromium AISI 430 stainless steel by plasma enhanced magnetron sputtering are presented. The coating with maximum hardness (of 45 GPa) was obtained at the following optimal values of elemental concentrations: Si ~5 at.%, Al ~15 at.%, and Ti ~27 at.%. The elastic modulus of the coating was 590 GPa. The reading of gaseous mixture (Ar-N2) pressure was 1*10-3 Torr and the reading of partial pressure of oxygen (O2) was 1*10-5 Torr. The X-ray diffraction (XRD) measurements showed the presence of Ti(Al)N. High-energy resolved XPS spectra of core levels revealed the formation of Ti-N, Ti-O-N, Si-N and Al-O-N bonds. Comparison of XPS valence band spectra with specially performed density functional theory calculations for two ordered and few disordered TiN1-xOx (0 =< x <= 1) demonstrates that a Ti(Al)OxNy phase is formed on the surface of AISI430 steel upon the plasma enhanced magnetron sputtering, which provides this material with a good combination of high hardness and improved oxidation resistance.
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Submitted 14 November, 2014;
originally announced November 2014.
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The characterization of Co-nanoparticles supported on graphene
Authors:
Paul Bazylewski,
Danil W. Boukhvalov,
Andrey I. Kukharenko,
Ernst. Z. Kurmaev,
Nikolay A. Skorikov,
Adrian Hunt,
Alexander Moewes,
Young Hee Lee,
Seif O. Cholakh,
Gap Soo Chang
Abstract:
The results of density functional theory (DFT) calculations and measurements of X-ray photoelectron (XPS) and X-ray emission (XES) spectra of Co-nanoparticles dispersed on graphene/Cu composites are presented. It is found that for 0.02nm and 0.06nm Co coverage the Co atoms form islands which are strongly oxidized under exposure at the air. For Co (2nm) coverage the upper Co-layers is oxidized wher…
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The results of density functional theory (DFT) calculations and measurements of X-ray photoelectron (XPS) and X-ray emission (XES) spectra of Co-nanoparticles dispersed on graphene/Cu composites are presented. It is found that for 0.02nm and 0.06nm Co coverage the Co atoms form islands which are strongly oxidized under exposure at the air. For Co (2nm) coverage the upper Co-layers is oxidized whereas the lower layers contacting with graphene is in metallic state. Therefore Co (2 nm) coverage induces the formation of protective oxide layer providing the ferromagnetic properties of Co nanoparticles which can be used as spin filters in spintronics devices.
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Submitted 17 November, 2014; v1 submitted 13 November, 2014;
originally announced November 2014.
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Characterization of solution processed TiOx buffer layers in inverted organic photovoltaics by XPS and DFT studies
Authors:
Ivan S. Zhidkov,
Ernst Z. Kurmaev,
Michel A. Korotin,
Andrey I. Kukharenko,
Achilleas Savva,
Stelios A. Choulis,
Danila M. Korotin,
Seif O. Cholakh
Abstract:
We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features…
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We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features which are absent in spectra of titanium butoxide deposited on Si and are attributed to appearance of Ti^{3+} valence states in ITO/TiOx. This conclusion is confirmed by density functional theory electronic structure calculations of stoichiometric TiO2 and oxygen deficient TiO_{2-1/8}. XPS C 1s measurements show the formation of C-O and O-C=O bonds which evidence the presence of residual carbon which can draw oxygen from the film network and induce the formation of fraction of Ti3+ states in TiOx films.
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Submitted 6 November, 2014;
originally announced November 2014.
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Modification of titanium and titanium dioxide surfaces by ion implantation: combined XPS and DFT study
Authors:
D. W. Boukhvalov,
D. M. Korotin,
A. I. Efremov,
E. Z. Kurmaev,
Ch. Borchers,
I. S. Zhidkov,
D. V. Gunderov,
R. Z. Valiev,
N. V. Gavrilov,
S. O. Cholakh
Abstract:
The results of XPS measurements (core levels and valence bands) of P+, Ca+, P+Ca+ and Ca+P+ ion implanted (E=30 keV, D=1x1017 cm-2) commercially pure titanium (cp-Ti) and first-principles density functional theory (DFT) calculations demonstrates formation of various structural defects in titanium dioxide films formed on the surface of implanted materials. We have found that for double implantation…
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The results of XPS measurements (core levels and valence bands) of P+, Ca+, P+Ca+ and Ca+P+ ion implanted (E=30 keV, D=1x1017 cm-2) commercially pure titanium (cp-Ti) and first-principles density functional theory (DFT) calculations demonstrates formation of various structural defects in titanium dioxide films formed on the surface of implanted materials. We have found that for double implantation (Ti:P+,Ca+ and Ti:Ca+,P+) the outermost surface layer formed mainly by Ca and P, respectively, i.e. the implantation sequence is very important. The DFT calculations show that under P+ and Ca+P+ ion implantation the formation energies for both cation (P-Ti) and anion (P-O) substitutions are comparable which can induce the creation of [PO4]3- and Ti-P species. For Ca+ and P+Ca+-ion implantation the calculated formation energies correspond to Ca2+-Ti4+ cation substitution. This conclusion is in agreement with XPS Ca 2p and Ti 2p core levels and valence band measurements and DFT calculations of electronic structure of related compounds. The conversion of implanted ions to Ca2+ and [PO4]3- species provides a good biocompatibility of cp-Ti for further formation of hydroxyapatite.
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Submitted 5 November, 2014;
originally announced November 2014.
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Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO$_2$
Authors:
R. J. Green,
D. A. Zatsepin,
D. J. St. Onge,
E. Z. Kurmaev,
N. V. Gavrilov,
A. F. Zatsepin,
A. Moewes
Abstract:
Cobalt and manganese ions are implanted into SiO$_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and A…
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Cobalt and manganese ions are implanted into SiO$_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO$_2$ valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO$_2$ electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.
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Submitted 15 March, 2014;
originally announced March 2014.
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CPA for strongly correlated systems: Electronic structure and magnetic properties of NiO-ZnO solid solutions
Authors:
M. A. Korotin,
Z. V. Pchelkina,
N. A. Skorikov,
E. Z. Kurmaev,
V. I. Anisimov
Abstract:
The method of electronic structure calculations for strongly correlated disordered materials is developed employing the basic idea of coherent potential approximation (CPA). Evolution of electronic structure and spin magnetic moment value with concentration $x$ in strongly correlated Ni$_{1-x}$Zn$_x$O solid solutions is investigated in the frame of this method. The obtained values of energy gap an…
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The method of electronic structure calculations for strongly correlated disordered materials is developed employing the basic idea of coherent potential approximation (CPA). Evolution of electronic structure and spin magnetic moment value with concentration $x$ in strongly correlated Ni$_{1-x}$Zn$_x$O solid solutions is investigated in the frame of this method. The obtained values of energy gap and magnetic moment are in agreement with the available experimental data.
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Submitted 26 February, 2014;
originally announced February 2014.
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Local structure of Fe impurity atoms in ZnO: bulk versus surface
Authors:
J. A. McLeod,
D. W. Boukhvalov,
D. A. Zatsepin,
R. J. Green,
B. Leedahl,
L. Cui,
E. Z. Kurmaev,
I. S. Zhidkov,
L. D. Finkelstein,
N. V. Gavrilov,
S. O. Cholakh,
A. Moewes
Abstract:
By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-do** in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-do** near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculat…
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By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-do** in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-do** near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculations performed herein suggest that the most likely defect structure is the single or double substitution of Zn with Fe, although, if additional oxygen is available, then Fe substitution with interstitial oxygen is even more energetically favourable. Furthermore, it is found that ferromagnetic states are energetically unfavourable, and ferromagnetic ordering is likely to be realized only through the formation of a secondary phase (i.e. ZnFe2O4), or codo** with Cu.
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Submitted 16 February, 2014;
originally announced February 2014.
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Structural defects induced by Fe-ion implantation in TiO2
Authors:
B. Leedahl,
D. A. Zatsepin,
D. W. Boukhvalov,
R. J. Green,
J. A. McLeod,
S. S. Kim,
E. Z. Kurmaev,
I. S. Zhidkov,
N. V. Gavrilov,
S. O. Cholakh,
A. Moewes
Abstract:
X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clust…
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X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe$^{3+}$ are detected on the surface of all doped samples due to oxygen exposure. These experimental findings are compared with density functional theory (DFT) calculations of formation energies for different configurations of structural defects in the implanted TiO$_2$:Fe system. According to our calculations, the clustering of Fe-atoms in TiO$_2$:Fe thin films can be attributed to the formation of combined substitutional and interstitial defects. Further, the differences due to Fe do** in pellet and thin film samples can ultimately be attributed to different surface to volume ratios.
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Submitted 1 February, 2014;
originally announced February 2014.
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Reduction of conductivity and ferromagnetism induced by Ag do** in ZnO:Co
Authors:
H. Bieber,
S. Colis,
G. Schmerber,
V. Pierron-Bohnes,
D. W. Boukhvalov,
E. Z. Kurmaev,
L. D. Finkelstein,
P. Bazylewski,
A. Moewes,
G. S. Chang,
A. Dinia
Abstract:
Cobalt and silver co-do** has been undertaken in ZnO thin films grown by pulsed laser deposition in order to investigate the ferromagnetic properties in ZnO-based diluted magnetic materials and to understand the eventual relation between ferromagnetism and charge carriers. Hall transport measurements reveal that Ag do** up to 5% leads to a progressive compensation of the native n-type carriers…
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Cobalt and silver co-do** has been undertaken in ZnO thin films grown by pulsed laser deposition in order to investigate the ferromagnetic properties in ZnO-based diluted magnetic materials and to understand the eventual relation between ferromagnetism and charge carriers. Hall transport measurements reveal that Ag do** up to 5% leads to a progressive compensation of the native n-type carriers. The magnetization curves show ferromagnetic contributions for all samples at both 5 K and room temperature, decreasing with increasing the Ag concentration. First principles modeling of the possible configurations of Co-Ag defects suggest the formation of nano-clusters around interstitial Co impurity as the origin of the ferromagnetism. The Ag co-do** results in a decrease of the total spin of these clusters and of the Curie temperature.
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Submitted 17 July, 2013;
originally announced July 2013.
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Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica
Authors:
R. J. Green,
A. Hunt,
D. A. Zatsepin,
D. W. Boukhvalov,
J. A. McLeod,
E. Z. Kurmaev,
N. A. Skorikov,
N. V. Gavrilov,
A. Moewes
Abstract:
The electronic structures of Sn and Pb implanted SiO2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb-O and Sn-O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation re…
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The electronic structures of Sn and Pb implanted SiO2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb-O and Sn-O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn-O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO2 requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO2. These results help explain the complex processes which take place upon implantation and determine the final products.
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Submitted 24 September, 2012;
originally announced September 2012.
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Effect of 3d-do** on the electronic structure of BaFe2As2
Authors:
J. A. McLeod,
A. Buling,
R. J. Green,
T. D. Boyko,
N. A. Skorikov,
E. Z. Kurmaev,
M. Neumann,
L. D. Finkelstein,
N. Ni,
A. Thaler,
S. L. Bud'ko,
P. C. Canfield,
A. Moewes
Abstract:
The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni, and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level…
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The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni, and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d10 shell. These findings help shed light on why superconductivity can occur in BaFe2As2 doped with Co and Ni but not Cu.
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Submitted 11 April, 2012;
originally announced April 2012.
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Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups
Authors:
John A. McLeod,
Ernst Z. Kurmaev,
Peter V. Sushko,
Teak D. Boyko,
Igor A. Levitsky,
Alexander Moewes
Abstract:
We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous sili…
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We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spec- troscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L2,3 X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L2,3 XES and 2p X-ray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules.
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Submitted 29 February, 2012;
originally announced February 2012.
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Experimental Evidence of Cage Conduction Bands in Superconducting Cement 12CaO$\cdot$7Al$_2$O$_3$
Authors:
J. A. McLeod,
A. Buling,
E. Z. Kurmaev,
P. V. Sushko,
M. Neumann,
L. D. Finkelstein,
S. -W. Kim,
H. Hosono,
A. Moewes
Abstract:
Natural 12CaO$\cdot$7Al$_2$O$_3$ (C12A7) is a wide bandgap insulator, but conductivity can be realized by introducing oxygen deficiency. Currently, there are two competing models explaining conductivity in oxygen-deficient C12A7, one involving the electron transfer via a "cage conduction band" inside the nominal band gap, the other involving electron hop** along framework lattice sites. To help…
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Natural 12CaO$\cdot$7Al$_2$O$_3$ (C12A7) is a wide bandgap insulator, but conductivity can be realized by introducing oxygen deficiency. Currently, there are two competing models explaining conductivity in oxygen-deficient C12A7, one involving the electron transfer via a "cage conduction band" inside the nominal band gap, the other involving electron hop** along framework lattice sites. To help resolve this debate, we probe insulating and conducting C12A7 with X-ray emission, X-ray absorption, and X-ray photoemission spectroscopy, which provide a full picture of both the valence and conduction band edges in these materials. These measurements suggest the existence of a narrow conduction band between the main conduction and valence bands common in both conducting and insulating C12A7 and support the theory that free electrons in oxygen-deficient C12A7 occupy the low-energy states of this narrow band. Our measurements are corroborated with density functional theory calculations.
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Submitted 14 January, 2012;
originally announced January 2012.
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Carbon States in Carbon-Encapsulated Nickel Nanoparticles Studied by Means of X-Ray Absorption, Emission, and Photoelectron Spectroscopies
Authors:
V. R. Galakhov,
A. Buling,
M. Neumann,
N. A. Ovechkina,
A. S. Shkvarin,
A. S. Semenova,
M. A. Uimin,
A. Ye. Yermakov,
E. Z. Kurmaev,
O. Y. Vilkov,
D. W. Boukhvalov
Abstract:
Electronic structure of nickel nanoparticles encapsulated in carbon was characterized by photoelectron, X-ray absorption, and X-ray emission spectroscopies. Experimental spectra are compared with the density of states calculated in the frame of the density functional theory. The carbon shell of Ni nanoparticles has been found to be multilayer graphene with significant (about 6%) amount of Stone--W…
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Electronic structure of nickel nanoparticles encapsulated in carbon was characterized by photoelectron, X-ray absorption, and X-ray emission spectroscopies. Experimental spectra are compared with the density of states calculated in the frame of the density functional theory. The carbon shell of Ni nanoparticles has been found to be multilayer graphene with significant (about 6%) amount of Stone--Wales defects. Results of the experiments evidence protection of the metallic nanoparticles from the environmental degradation by providing a barrier against oxidation at least for two years. Exposure in air for 2 years leads to oxidation only of the carbon shell of Ni@C nanoparticles with coverage of functional groups.
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Submitted 6 November, 2011;
originally announced November 2011.
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Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO
Authors:
J. A. McLeod,
A. V. Lukoyanov,
E. Z. Kurmaev,
L. D. Finkelstein,
A. Moewes
Abstract:
We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states 5s, 5p, and 5d are strongly hybridized with the O 2p-states, and that our…
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We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states 5s, 5p, and 5d are strongly hybridized with the O 2p-states, and that our DFT-calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity.
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Submitted 18 July, 2011;
originally announced July 2011.
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Correlation effects in Ni 3d states of LaNiPO
Authors:
A. V. Lukoyanov,
S. L. Skornyakov,
J. A. McLeod,
M. Abu-Samak,
R. G. Wilks,
E. Z. Kurmaev,
A. Moewes,
N. A. Skorikov,
Yu. A. Izyumov,
L. D. Finkelstein,
V. I. Anisimov,
D. Johrendt
Abstract:
The electronic structure of the new superconducting material LaNiPO experimentally probed by soft X-ray spectroscopy and theoretically calculated by the combination of local density approximation with Dynamical Mean-Field Theory (LDA+DMFT) are compared herein. We have measured the Ni L2,3 X-ray emission (XES) and absorption (XAS) spectra which probe the occupied and unoccupied the Ni 3d states, re…
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The electronic structure of the new superconducting material LaNiPO experimentally probed by soft X-ray spectroscopy and theoretically calculated by the combination of local density approximation with Dynamical Mean-Field Theory (LDA+DMFT) are compared herein. We have measured the Ni L2,3 X-ray emission (XES) and absorption (XAS) spectra which probe the occupied and unoccupied the Ni 3d states, respectively. In LaNiPO, the Ni 3d states are strongly renormalized by dynamical correlations and shifted about 1.5 eV lower in the valence band than the corresponding Fe 3d states in LaFeAsO. We further obtain a lower Hubbard band at -9 eV below the Fermi level in LaNiPO which bears striking resemblance to the lower Hubbard band in the correlated oxide NiO, while no such band is observed in LaFeAsO. These results are also supported by the intensity ratio between the transition metal L2 and L3 bands measured experimentally to be higher in LaNiPO than in LaFeAsO, indicating the presence of the stronger electron correlations in the Ni 3d states in LaNiPO in comparison with the Fe 3d states in LaFeAsO. These findings are in accordance with resonantly excited transition metal L3 X-ray emission spectra which probe occupied metal 3d-states and show the appearance of the lower Hubbard band in LaNiPO and NiO and its absence in LaFeAsO.
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Submitted 15 April, 2010;
originally announced April 2010.
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Electronic structure of BiMeO3 multiferroics and related oxides
Authors:
J. A. McLeod,
Z. V. Pchelkina,
L. D. Finkelstein,
E. Z. Kurmaev,
R. G. Wilks,
A. Moewes,
I. V. Solovyev,
A. A. Belik
Abstract:
We have performed a systematic study of the electronic structures of BiMeO3 (Me = Sc, Cr, Mn, Fe, Co, Ni) series by soft X-ray emission (XES) and absorption (XAS) spectroscopy. The band gap values were estimated for all compounds in the series. For BiFeO3 a band gap of ~0.9 eV was obtained from the alignment of the O Ka XES and O 1s XAS. The O 1s XAS spectrum of BiNiO3 indicates that the formati…
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We have performed a systematic study of the electronic structures of BiMeO3 (Me = Sc, Cr, Mn, Fe, Co, Ni) series by soft X-ray emission (XES) and absorption (XAS) spectroscopy. The band gap values were estimated for all compounds in the series. For BiFeO3 a band gap of ~0.9 eV was obtained from the alignment of the O Ka XES and O 1s XAS. The O 1s XAS spectrum of BiNiO3 indicates that the formation of holes is due to a Ni2+ valency rather than a Ni3+ valency. We have found that the O Ka XES and O 1s XAS of BiMeO3 probing partially occupied and vacant O 2p states, respectively, are in agreement with the O 2p densities of states obtained from spin-polarized band structure calculations. The O Ka XES spectra show the same degree of Bi 6s--O 2p hybridization for all compounds in the series. We argue herein that the stereochemical activity of Bi 6s lone pairs must be supplemented with inversion symmetry breaking to allow electric polarization. For BiMnO3 and BiFeO3, two cases of multiferroic materials in this series, the former breaks the inversion symmetry due to the antiferromagnetic order induced by particular orbital ordering in the highly distorted perovskite structure and the latter has rhombohedral crystal structure without inversion symmetry.
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Submitted 1 October, 2009;
originally announced October 2009.
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Electronic structure of alkaline earth and post-transition metal oxides
Authors:
J. A. McLeod,
R. G. Wilks,
N. A. Skorikov,
L. D. Finkelstein,
M. Abu-Samak,
E. Z. Kurmaev,
A. Moewes
Abstract:
The electronic structure in alkaline earth AeO (Ae = Be, Mg, Ca, Sr, Ba) and post-transition metal oxides MeO (Me = Zn, Cd, Hg) is probed with oxygen K-edge X-ray absorption and emission spectroscopy. The experimental data is compared with density functional theory electronic structure calculations. We use our experimental spectra of the oxygen K-edge to estimate the bandgaps of these materials,…
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The electronic structure in alkaline earth AeO (Ae = Be, Mg, Ca, Sr, Ba) and post-transition metal oxides MeO (Me = Zn, Cd, Hg) is probed with oxygen K-edge X-ray absorption and emission spectroscopy. The experimental data is compared with density functional theory electronic structure calculations. We use our experimental spectra of the oxygen K-edge to estimate the bandgaps of these materials, and compare our results to the range of values available in the literature.
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Submitted 22 March, 2010; v1 submitted 11 August, 2009;
originally announced August 2009.
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Metal-insulator transition in NiS$_{2-x}$Se$_x$
Authors:
J. Kunes,
L. Baldassarre,
B. Schachner,
K. Rabia,
C. A. Kuntscher,
Dm. M. Korotin,
V. I. Anisimov,
J. A. McLeod,
E. Z. Kurmaev,
A. Moewes
Abstract:
The origin of the gap in NiS2 as well as the pressure- and do**-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-field approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding s…
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The origin of the gap in NiS2 as well as the pressure- and do**-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-field approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding splitting in the S-S (Se-Se) dimer is identified as the main parameter controlling the size of the charge gap. The implications for the metal-insulator transition driven by pressure and Se do** are discussed.
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Submitted 27 March, 2010; v1 submitted 10 July, 2009;
originally announced July 2009.
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Strength of correlations in pnictides and its assessment by theoretical calculations and spectroscopy experiments
Authors:
V. I. Anisimov,
E. Z. Kurmaev,
A. Moewes,
I. A. Izyumov
Abstract:
LDA+DMFT (Local Density Approximation combined with Dynamical Mean-Field Theory) computation scheme has been used to calculate spectral properties of LaFeAsO -- the parent compound of the new high-T_c iron oxypnictides. The average Coulomb repulsion U=3-4 eV and Hund's exchange J=0.8 eV parameters for iron 3d electrons were calculated using the first principles constrained density functional the…
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LDA+DMFT (Local Density Approximation combined with Dynamical Mean-Field Theory) computation scheme has been used to calculate spectral properties of LaFeAsO -- the parent compound of the new high-T_c iron oxypnictides. The average Coulomb repulsion U=3-4 eV and Hund's exchange J=0.8 eV parameters for iron 3d electrons were calculated using the first principles constrained density functional theory scheme in the Wannier functions formalism. DMFT calculations using these parameters result in moderately correlated electronic structure with effective electron mass enhancement m^*~2 that is in agreement with the experimental X-ray and photoemission spectra. Conclusion of moderate correlations strength is confirmed by the observation that pnictides experimental spectra agree well with corresponding spectra for metallic iron while being very different with Mott insulator FeO spectra.
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Submitted 19 May, 2009;
originally announced May 2009.
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The electronic structure of LiFeAs and NaFeAs probed by resonant inelastic x-ray scattering spectra
Authors:
E. Z. Kurmaev,
J. McLeod,
N. A. Skorikov,
L. D. Finkelstein,
A. Moewes,
M. A. Korotin,
Yu. A. Izyumov,
S. Clarke
Abstract:
Results of resonant inelastic X-ray scattering (RIXS) measurements at Fe L-edges and electronic structure calculations of LiFeAs and NaFeAs are presented. Both experiment and theory show that in the vicinity of the Fermi energy, the density of states is dominated by contributions from Fe 3d-states. The comparison of Fe L2,3 non-resonant and resonant (excited at L2-threshold) X-ray emission spect…
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Results of resonant inelastic X-ray scattering (RIXS) measurements at Fe L-edges and electronic structure calculations of LiFeAs and NaFeAs are presented. Both experiment and theory show that in the vicinity of the Fermi energy, the density of states is dominated by contributions from Fe 3d-states. The comparison of Fe L2,3 non-resonant and resonant (excited at L2-threshold) X-ray emission spectra with spectra of LaOFeAs and CaFe2As2 show a great similarity in energy and I(L2)/I(L3) intensity ratio. The I(L2)/I(L3) intensity ratio of all FeAs-based superconductors is found to be more similar to metallic Fe than to correlated FeO. Basing on these measurements we conclude that iron-based superconductors are weakly or moderately correlated systems.
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Submitted 17 July, 2009; v1 submitted 27 March, 2009;
originally announced March 2009.
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Electronic structure of CaFe2As2: Contribution of itinerant Fe 3d-states to the Fermi Level
Authors:
E. Z. Kurmaev,
J. A. McLeod,
A. Buling,
N. A. Skorikov,
A. Moewes,
M. Neumann,
M. A. Korotin,
Yu. A. Izyumov,
N. Ni,
P. C. Canfield
Abstract:
We present density functional theory (DFT) calculations and a full set of X-ray spectra (resonant inelastic X-ray scattering and X-ray photoelectron spectra) measurements of single crystal CaFe2As2. The experimental valence band spectra are consistent with our DFT calculations. Both theory and experiment show that the Fe 3d-states dominate the Fermi level and hybridize with Ca 3d-states. The sim…
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We present density functional theory (DFT) calculations and a full set of X-ray spectra (resonant inelastic X-ray scattering and X-ray photoelectron spectra) measurements of single crystal CaFe2As2. The experimental valence band spectra are consistent with our DFT calculations. Both theory and experiment show that the Fe 3d-states dominate the Fermi level and hybridize with Ca 3d-states. The simple shape of Xray photoelectron (XPS) Fe 2p-core level spectrum (without any satellite structure typical for correlated systems) suggests itinerant character of the Fe 3d-electrons. Based on the similarity of the calculated and experimental Fe 3d-states distribution in LaOFeAs and CaFe2As2 we conclude that superconductivity in the FeAs-systems can be described within a minimal model, taking into account only Fe 3d-bands close to the Fermi level.
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Submitted 6 February, 2009;
originally announced February 2009.
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X-ray spectra and electronic structure of FeAs superconductors
Authors:
E. Z. Kurmaev,
R. G. Wilks,
A. Moewes,
N. A. Skorikov,
Yu. A. Izyumov,
L. D. Finkelstein,
R. H. Li,
X. H. Chen
Abstract:
The densities of the valence and conduction band electronic states of the newly discovered layered superconductors LaOFeAs, LaO$_{0.87}$F$_{0.13}$FeAs (Tc=26 K), SmO$_{0.95}$F$_{0.05}$FeAs and SmO$_{0.85}$F$_{0.15}$FeAs (Tc=43 K) are studied using soft X-ray absorption and emission spectroscopy combined with FP LAPW calculations of LaOFeAs, LaO$_{0.875}$FeAs and LaO$_{0.875}$F${0.125}$FeAs. The…
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The densities of the valence and conduction band electronic states of the newly discovered layered superconductors LaOFeAs, LaO$_{0.87}$F$_{0.13}$FeAs (Tc=26 K), SmO$_{0.95}$F$_{0.05}$FeAs and SmO$_{0.85}$F$_{0.15}$FeAs (Tc=43 K) are studied using soft X-ray absorption and emission spectroscopy combined with FP LAPW calculations of LaOFeAs, LaO$_{0.875}$FeAs and LaO$_{0.875}$F${0.125}$FeAs. The Fe 3d-states are localized in energy near the top of the valence band and are partially hybridized with p-type O (2p), As (4p), and La (6p) states approximately 3 eV below the Fermi energy. The Fe L3 X-ray emission spectra do not show any features that would indicate the presence of the low Hubbard 3d-band or the quasiparticle peak that were predicted by the DMFT analysis of LaOFeAs. We can conclude that the LaOFeAs-type compounds do not represent strongly correlated systems. When either oxygen vacancies or fluorine dopants are included in numerical electronic structure calculations the width of O 2p-band decreases, but the distribution of Fe 3d-states is largely unaffected.
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Submitted 19 May, 2008; v1 submitted 6 May, 2008;
originally announced May 2008.
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Electronic Structure of Transition-Metal Dicyanamides Me[N(CN)$_2$]$_2$ (Me = Mn, Fe, Co, Ni, Cu)
Authors:
D. O. Demchenko,
Amy Y. Liu,
E. Z. Kurmaev,
L. D. Finkelstein,
V. R. Galakhov,
A. Moewes,
S. G. Chiuzbaian,
M. Neumann,
Carmen R. Kmety,
Kenneth L. Stevenson
Abstract:
The electronic structure of Me[N(CN)$_2$]$_2$ (Me=Mn, Fe, Co, Ni, Cu) molecular magnets has been investigated using x-ray emission spectroscopy (XES) and x-ray photoelectron spectroscopy (XPS) as well as theoretical density-functional-based methods. Both theory and experiments show that the top of the valence band is dominated by Me 3d bands, while a strong hybridization between C 2p and N 2p st…
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The electronic structure of Me[N(CN)$_2$]$_2$ (Me=Mn, Fe, Co, Ni, Cu) molecular magnets has been investigated using x-ray emission spectroscopy (XES) and x-ray photoelectron spectroscopy (XPS) as well as theoretical density-functional-based methods. Both theory and experiments show that the top of the valence band is dominated by Me 3d bands, while a strong hybridization between C 2p and N 2p states determines the valence band electronic structure away from the top. The 2p contributions from non-equivalent nitrogen sites have been identified using resonant inelastic x-ray scattering spectroscopy with the excitation energy tuned near the N 1s threshold. The binding energy of the Me 3d bands and the hybridization between N 2p and Me 3d states both increase in going across the row from Me = Mn to Me = Cu. Localization of the Cu 3d states also leads to weak screening of Cu 2p and 3s states, which accounts for shifts in the core 2p and 3s spectra of the transition metal atoms. Calculations indicate that the ground-state magnetic ordering, which varies across the series is largely dependent on the occupation of the metal 3d shell and that structural differences in the superexchange pathways for different compounds play a secondary role.
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Submitted 17 November, 2003;
originally announced November 2003.
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Electronic structure of magnetic molecules V15: LDA+U calculations, X-ray emission and photoelectron spectra
Authors:
D. W. Boukhvalov,
E. Z. Kurmaev,
A. Moewes,
D. A. Zatsepin,
V. M. Cherkashenko,
S. N. Nemnonov,
L. D. Finkelstein,
Yu. M. Yarmoshenko,
M. Neumann,
V. V. Dobrovitski,
M. I. Katsnelson,
A. I. Lichtenstein,
P. Koegerler
Abstract:
Electronic structure of V$_{15}$ magnetic molecules (K$_6$ [V$_{15}$ As$_6$ O$_{42}$ (H$_2$O)] \cdot 8H$_2$O)$ has been studied using LSDA+U band structure calculations, and measurements of X-ray photoelectron (valence band, core levels) and X-ray fluorescence spectra (vanadium K$β_5$ and L$_{2,3}$, and oxygen K$α$). Experiments confirm that vanadium ions are tetravalent in V$_{15}…
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Electronic structure of V$_{15}$ magnetic molecules (K$_6$ [V$_{15}$ As$_6$ O$_{42}$ (H$_2$O)] \cdot 8H$_2$O)$ has been studied using LSDA+U band structure calculations, and measurements of X-ray photoelectron (valence band, core levels) and X-ray fluorescence spectra (vanadium K$β_5$ and L$_{2,3}$, and oxygen K$α$). Experiments confirm that vanadium ions are tetravalent in V$_{15}$, and their local atomic structure is close to that of CaV$_3$O$_7$. Comparison of experimental data with the results of electronic structure calculations show that the LSDA+U method provides a description of the electronic structure of V$_{15}$ which agrees well with experiments.
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Submitted 30 September, 2002;
originally announced September 2002.
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Resonant x-ray emission spectra of Mn based Heusler alloys
Authors:
M. V. Yablonskikh,
Yu. M. Yarmoshenko,
I. V. Solovyev,
L. Gridneva,
T. Schmitt,
M. Magnuson,
L. -C. Duda,
E. Z. Kurmaev,
J. Nordgren
Abstract:
The Mn L_2,L_3 x-ray spectra of the Cu_2MnAl and Co_2MnZ (Z=Al,Ga, Sn, Sb) Heusler alloys have been investigated by the Resonant X-ray Emission Spectroscopy (RXES) using linearly polarized monochromatic synchrotron radiation for. The interplay between the half-metallic character of the Mn 3d electronic structure in connection with the local magnetic moment $μ_{Mn}$ and Mn $2p\to 3d$ x-ray emissi…
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The Mn L_2,L_3 x-ray spectra of the Cu_2MnAl and Co_2MnZ (Z=Al,Ga, Sn, Sb) Heusler alloys have been investigated by the Resonant X-ray Emission Spectroscopy (RXES) using linearly polarized monochromatic synchrotron radiation for. The interplay between the half-metallic character of the Mn 3d electronic structure in connection with the local magnetic moment $μ_{Mn}$ and Mn $2p\to 3d$ x-ray emission spectra is discussed.
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Submitted 7 March, 2002;
originally announced March 2002.
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X-ray spectra of 3d metals of Heusler alloys and La$_{1-x}$Sm$_x$Mn$_2$Si$_2$ compounds
Authors:
M. V. Yablonskikh,
Yu. M. Yarmoshenko,
E. G. Gerasimov,
V. S. Gaviko,
S. Bartkowski,
E. Z. Kurmaev,
M. Neumann
Abstract:
The Mn x-ray emission spectra and x-ray photoemission spectra of Mn-based Heusler alloys Co$_2$MnAl, Co$_2$MnSb and La$_{1-x}$Sm$_x$Mn$_2$Si$_2$ compounds (x=0, 0.8) have been measured and discussed in connection with a value local magnetic moment at Mn site. The spectra peculiarities reflect also the localization degree of 3d valence electrons of 3d metals in considered compounds.
The Mn x-ray emission spectra and x-ray photoemission spectra of Mn-based Heusler alloys Co$_2$MnAl, Co$_2$MnSb and La$_{1-x}$Sm$_x$Mn$_2$Si$_2$ compounds (x=0, 0.8) have been measured and discussed in connection with a value local magnetic moment at Mn site. The spectra peculiarities reflect also the localization degree of 3d valence electrons of 3d metals in considered compounds.
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Submitted 9 April, 2002; v1 submitted 4 March, 2002;
originally announced March 2002.
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Electronic structure of MgB$_2$: X-ray emission and absorption studies
Authors:
E. Z. Kurmaev,
I. I. Lyakhovskaya,
J. Kortus,
A. Moewes,
N. Miyata,
M. Demeter,
M. Neumann,
M. Yanagihara,
M. Watanabe,
T. Muranaka,
J. Akimitsu
Abstract:
Measurements of x-ray emission and absorption spectra of the constituents of MgB$_2$ are presented. The results obtained are in good agreement with calculated x-ray spectra, with dipole matrix elements taken into account. The comparison of x-ray emission spectra of graphite, AlB$_2$, and MgB$_2$ in the binding energy scale supports the idea of charge transfer from $σ$ to $π$ bands, which creates…
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Measurements of x-ray emission and absorption spectra of the constituents of MgB$_2$ are presented. The results obtained are in good agreement with calculated x-ray spectra, with dipole matrix elements taken into account. The comparison of x-ray emission spectra of graphite, AlB$_2$, and MgB$_2$ in the binding energy scale supports the idea of charge transfer from $σ$ to $π$ bands, which creates holes at the top of the bonding $σ$ bands and drives the high-T$_c$
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Submitted 21 March, 2002; v1 submitted 23 March, 2001;
originally announced March 2001.
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Electronic structure of Co_xTiSe_2 and Cr_xTiSe_2
Authors:
A. N. Titov,
A. V. Kuranov,
V. G. Pleschev,
Yu. M. Yarmoshenko,
M. V. Yablonskikh,
A. V. Postnikov,
S. Plogmann,
M. Neumann,
A. V. Ezhov,
E. Z. Kurmaev
Abstract:
The results of investigations of intercalated compounds Cr_xTiSe_2 and Co_xTiSe_2 by X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) are presented. The data obtained are compared with theoretical results of spin-polarized band structure calculations. A good agreement between theoretical and experimental data for the electronic structure of the investigated materials…
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The results of investigations of intercalated compounds Cr_xTiSe_2 and Co_xTiSe_2 by X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) are presented. The data obtained are compared with theoretical results of spin-polarized band structure calculations. A good agreement between theoretical and experimental data for the electronic structure of the investigated materials has been observed. The interplay between the M3d--Ti3d hybridization (M=Cr, Co) and the magnetic moment at the M site is discussed. A 0.9 eV large splitting of the core Cr2p{3/2} level was observed, which reveals a strong exchange magnetic interaction of 3d-2p electrons of Cr. In the case of a strong localization of the Cr3d electrons (for x<0.25), the broadening of the CrL spectra into the region of the states above the nominal Fermi level was observed and attributed to X-ray re-emission. The measured kinetic properties are in good accordance with spectral investigations and band calculation results.
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Submitted 9 May, 2000;
originally announced May 2000.
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Magnetic circular dichroism in X-ray fluorescence of Heusler alloys at threshold excitation
Authors:
M. V. Yablonskikh,
A. V. Ezhov,
V. I. Grebennikov,
Yu. M. Yarmoshenko,
E. Z. Kurmaev,
S. M. Butorin,
L. -C. Duda,
C. Sothe,
T. Kaambre,
M. Magnuson,
J. Nordgren,
S. Plogmann,
M. Neumann
Abstract:
The results of fluorescence measurements of magnetic circular dichroism (MCD) in Mn L_2,L_3 X-ray emission and absorption for Heusler alloys NiMnSb and Co2MnSb are presented. Very intense resonance Mn L_3 emission is found at the Mn 2p_3/2 threshold and is attributed to a peculiarity of the threshold excitation in materials with the half-metallic character of the electronic structure. A theoreti…
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The results of fluorescence measurements of magnetic circular dichroism (MCD) in Mn L_2,L_3 X-ray emission and absorption for Heusler alloys NiMnSb and Co2MnSb are presented. Very intense resonance Mn L_3 emission is found at the Mn 2p_3/2 threshold and is attributed to a peculiarity of the threshold excitation in materials with the half-metallic character of the electronic structure. A theoretical model for the description of resonance scattering of polarized x-rays is suggested.
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Submitted 25 November, 1999;
originally announced November 1999.
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Electronic Structure of Cu_(1-x)Ni_xRh_2S_4 and CuRh_2Se_4: Band Structure Calculations, X-ray Photoemission and Fluorescence Measurements
Authors:
G. L. W. Hart,
W. E. Pickett,
E. Z. Kurmaev,
D. Hartmann,
A. Moewes,
M. Neumann,
D. L. Ederer,
R. Endoh,
K. Taniguchi,
S. Nagata
Abstract:
The electronic structure of spinel-type Cu_(1-x)Ni_xRh_2S_4 (x = 0.0, 0.1, 0.3, 0.5, 1.0) and CuRh_2Se_4 compounds has been studied by means of X-ray photoelectron and fluorescent spectroscopy. Cu L_3, Ni L_3, S L_(2,3) and Se M_(2,3) X-ray emission spectra (XES) were measured near thresholds at Beamline 8.0 of the Lawrence Berkeley Laboratory's Advanced Light Source. XES measurements of the con…
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The electronic structure of spinel-type Cu_(1-x)Ni_xRh_2S_4 (x = 0.0, 0.1, 0.3, 0.5, 1.0) and CuRh_2Se_4 compounds has been studied by means of X-ray photoelectron and fluorescent spectroscopy. Cu L_3, Ni L_3, S L_(2,3) and Se M_(2,3) X-ray emission spectra (XES) were measured near thresholds at Beamline 8.0 of the Lawrence Berkeley Laboratory's Advanced Light Source. XES measurements of the constituent atoms of these compounds, reduced to the same binding energy scale, are found to be in excellent agreement with XPS valence bands. The calculated XES spectra which include dipole matrix elements show that the partial density of states reproduce experimental spectra quite well. States near the Fermi level (E_F) have strong Rh d and S(Se) p character in all compounds. In NiRh_2S_4 the Ni 3d states contribute strongly at E_F, whereas in both Cu compounds the Cu 3d bands are only ~1 eV wide and centered ~2.5 eV below E_F, leaving very little 3d character at E_F. The density of states at the Fermi level is less in NiRh_2S_4 than in CuRh_2S_4. This difference may contribute to the observed decrease, as a function of Ni concentration, in the superconducting transition temperature in Cu_(1-x)Ni_xRh_2S_4. The density of states of the ordered alloy Cu_(1/2)Ni_(1/2)Rh_2S_4 shows behavior that is more ``split-band''-like than ``rigid band''-like.
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Submitted 15 June, 1999;
originally announced June 1999.
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X-ray photoelectron 3s spectra of transition metal oxides
Authors:
V. R. Galakhov,
S. Uhlenbrock,
S. Bartkowski,
A. V. Postnikov,
M. Neumann,
L. D. Finkelstein,
E. Z. Kurmaev,
A. A. Samokhvalov,
L. I. Leonyuk
Abstract:
We present metal 3s x-ray photoelectron spectra of different transition metal oxides. The values of the 3s exchange splitting for the 3d metal oxides are given as a function of the 3d electron number in the ground state. The spectra were analysed using the simple two-configuration model of the interatomic configuration mixing. The change of the 3s spectra is ascribed to the change of the charge-…
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We present metal 3s x-ray photoelectron spectra of different transition metal oxides. The values of the 3s exchange splitting for the 3d metal oxides are given as a function of the 3d electron number in the ground state. The spectra were analysed using the simple two-configuration model of the interatomic configuration mixing. The change of the 3s spectra is ascribed to the change of the charge-transfer energy.
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Submitted 23 March, 1999;
originally announced March 1999.