Showing 1–25 of 25 results for author: Kurachi, I

Evaluation of the X-ray SOI pixel detector with the on-chip ADC

Authors: Hiroumi Matsuhashi, Kouichi Hagino, Aya Bamba, Ayaki Takeda, Masataka Yukumoto, Koji Mori, Yusuke Nishioka, Takeshi Go Tsuru, Mizuki Uenomachi, Tomonori Ikeda, Masamune Matsuda, Takuto Narita, Hiromasa Suzuki, Takaaki Tanaka, Ikuo Kurachi, Takayoshi Kohmura, Yusuke Uchida, Yasuo Arai, Shoji Kawahito

Abstract: XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must… ▽ More XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must be as compact as possible to achieve a large imaging area in the limited space in satellites. Thus, we developed a new XRPIX device with the on-chip ADC, and evaluated its performances. As the results, the integral non-linearity was evaluated to be 6 LSB (least significant bit), equivalent to 36 eV. The differential non-linearity was less than 0.7 LSB, and input noise from the on-chip ADC was 5~$\rm{e^{-}}$. Also, we evaluated end-to-end performance including the sensor part as well as the on-chip ADC. As the results, energy resolution at 5.9 keV was 294 $\rm{\pm}$ 4 eV in full-width at half maximum for the best pixel. △ Less

Submitted 10 May, 2024; v1 submitted 9 May, 2024; originally announced May 2024.

Comments: 17 pages, 9 figures, NIMA, accepted

Journal ref: Nuclear Instruments and Methods in Physics Research section A (NIM-A) 2024

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

Authors: Masataka Yukumoto, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Syuto Yonemura, Daisuke Izumi, Uzuki Iwakiri, Takeshi G. Tsuru, Ikuo Kurachi, Kouichi Hagino, Yasuo Arai, Takayoshi Kohmura, Takaaki Tanaka, Miraku Kimura, Yuta Fuchita, Taiga Yoshida, Tomonori Ikeda

Abstract: We have been develo** silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO$_{2}$… ▽ More We have been develo** silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO$_{2}$ interface and to fix the back-gate voltage of the SOI transistors. An n-well is further introduced between the p-well and the substrate to make a potential barrier between them and suppress a leakage current. An optimization study on the n-well dopant concentration is necessary because a higher dopant concentration could result in a higher potential barrier but also in a larger sense-node capacitance leading to a lower spectroscopic performance, and vice versa. Based on a device simulation, we fabricated five candidate chips having different n-well dopant concentrations. We successfully found out the best n-well design, which suppressed a large leakage current and showed satisfactory X-ray spectroscopic performance. Too low and too high n-well dopant concentration chips showed a large leakage current and degraded X-ray spectroscopic performance, respectively. We also found that the dependency of X-ray spectroscopic performance on the n-well dopant concentration can be largely explained by the difference in sense-node capacitance. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Comments: 9 pages, 9 figures, accepted for publication in NIM A

Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure

Authors: Kouichi Hagino, Masatoshi Kitajima, Takayoshi Kohmura, Ikuo Kurachi, Takeshi G. Tsuru, Masataka Yukumoto, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Takaaki Tanaka

Abstract: The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good timing resolution of a few tens of $μ$s. However, it had a major issue with its radiation tolerance to the total ionizing dose (TID) effect because of its thic… ▽ More The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good timing resolution of a few tens of $μ$s. However, it had a major issue with its radiation tolerance to the total ionizing dose (TID) effect because of its thick buried oxide layer due to the SOI structure. Although new device structures introducing pinned depleted diodes dramatically improved radiation tolerance, it remained unknown how radiation effects degrade the sensor performance. Thus, this paper reports the results of a study of the degradation mechanism of XRPIX due to radiation using device simulations. In particular, mechanisms of increases in dark current and readout noise are investigated by simulation, taking into account the positive charge accumulation in the oxide layer and the increase in the surface recombination velocity at the interface between the sensor layer and the oxide layer. As a result, it is found that the depletion of the buried p-well at the interface increases the dark current, and that the increase in the sense-node capacitance increases the readout noise. △ Less

Submitted 14 June, 2023; originally announced June 2023.

Comments: 7 pages, 10 figures, accepted for publication in IEEE-TNS

Single Event Tolerance of X-ray SOI Pixel Sensors

Authors: Kouichi Hagino, Mitsuki Hayashida, Takayoshi Kohmura, Toshiki Doi, Shun Tsunomachi, Masatoshi Kitajima, Takeshi G. Tsuru, Hiroyuki Uchida, Kazuho Kayama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Abstract: We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr… ▽ More We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 9 pages, 5 figures, accepted for publication in JATIS

Proton radiation damage tolerance of wide dynamic range SOI pixel detectors

Authors: Shun Tsunomachi, Takayoshi Kohmura, Kouichi Hagino, Masatoshi Kitajima, Toshiki Doi, Daiki Aoki, Asuka Ohira, Yasuyuki Shimizu, Kaito Fujisawa, Shizusa Yamazaki, Yuusuke Uchida, Makoto Shimizu, Naoki Itoh, Yasuo Arai, Toshinobu Miyoshi, Ryutaro Nishimura, Takeshi Go Tsuru, Ikuo Kurachi

Abstract: We have been develo** the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of… ▽ More We have been develo** the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%. △ Less

Submitted 8 September, 2022; originally announced September 2022.

Comments: 7 pages, 8 figures, published in proceedings for SPIE Astronomical Telescopes + Instrumentation in 2022

X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"

Authors: Masatoshi Kitajima, Kouichi Hagino, Takayoshi Kohmura, Mitsuki Hayashida, Kenji Oono, Kousuke Negishi, Keigo Yarita, Toshiki Doi, Shun Tsunomachi, Takeshi G. Tsuru, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Takaaki Tanaka, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Yasuo Arai, Ikuo Kurachi

Abstract: We have been develo** the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as… ▽ More We have been develo** the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface. △ Less

Submitted 26 May, 2022; originally announced May 2022.

Comments: 15 pages, 12 figures, accepted for publication in Journal of Astronomical Telescopes, Instruments, and Systems

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Authors: Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura, Masatoshi Kitajima, Keigo Yarita, Kenji Oono, Kousuke Negishi, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Abstract: X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-… ▽ More X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Comments: 15 pages, 16 figures, accepted for publication in JATIS

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

Authors: Ryota Kodama, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Takayoshi Kohmura, Kouichi Hagino, Mitsuki Hayashida, Masatoshi Kitajima, Shoji Kawahito, Keita Yasutomi, Hiroki Kamehama

Abstract: We have been develo** a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit… ▽ More We have been develo** a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 8 pages, 10 figures, accepted for publication in NIMA, proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector (HSTD12)

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Authors: Kouichi Hagino, Keigo Yarita, Kousuke Negishi, Kenji Oono, Mitsuki Hayashida, Masatoshi Kitajima, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ryota Kodama, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Tsuyoshi Hamano, Hisashi Kitamura

Abstract: The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the… ▽ More The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well. △ Less

Submitted 16 July, 2020; originally announced July 2020.

Comments: 7 pages, 7 figures, accepted for publication in NIM A

Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

Authors: Y. Kamiya, T. Miyoshi, H. Iwase, T. Inada, A. Mizushima, Y. Mita, K. Shimazoe, H. Tanaka, I. Kurachi, Y. Arai

Abstract: We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~μ$m in terms of a standard deviation of the li… ▽ More We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~μ$m in terms of a standard deviation of the line spread function. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Comments: 6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12

Journal ref: Nucl. Instrum. Methods A979, 164400 (2020)*

Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy

Authors: K. Hagino, K. Negishi, K. Oono, K. Yarita, T. Kohmura, T. G. Tsuru, T. Tanaka, S. Harada, K. Kayama, H. Matsumura, K. Mori, A. Takeda, Y. Nishioka, M. Yukumoto, K. Fukuda, T. Hida, Y. Arai, I. Kurachi, S. Kishimoto

Abstract: We have been develo** the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than… ▽ More We have been develo** the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~μs}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~μmφ}$ pinhole, and scanned the device with $6{\rm ~μm}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 12 pages, 9 figures, accepted for publication in Journal of Instrumentation

Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors

Authors: Kouichi Hagino, Kenji Oono, Kousuke Negishi, Keigo Yarita, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Shunji Kishimoto

Abstract: We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of c… ▽ More We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $σ_{\rm cloud} = 4.30 \pm 0.07$ $μ$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Comments: 9 pages, 12 figures, accepted for publication in IEEE Transactions on Nuclear Science

Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment

Authors: Kazuho Kayama, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Yuki Amano, Junko S. Hiraga, Masayuki Yoshida, Yasuaki Kamata, Shotaro Sakuma, Daito Yuhi, Yukino Urabe, Hiroshi Tsunemi, Hideaki Matsumura, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Yasuo Arai, Ikuo Kurachi, Ayaki Takeda, Koji Mori , et al. (9 additional authors not shown)

Abstract: We have been develo** a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully… ▽ More We have been develo** a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Comments: 10 pages, 7 figures, , Conference proceedings for PIXEL2018

Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area

Authors: Hideki Hayashi, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been develo** monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe… ▽ More We have been develo** monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: 5 pages, 9 figures

Journal ref: Nuclear Inst. and Methods in Physics Research, A 924 (2019) 400-403

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Authors: Takaaki Tanaka, Takeshi Go Tsuru, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi , et al. (2 additional authors not shown)

Abstract: We have been develo** monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi… ▽ More We have been develo** monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Comments: 5 pages, 9 figures, submitted to Conference Record of IEEE NSS-MIC 2018

X-ray response evaluation in subpixel level for X-ray SOI pixel detectors

Authors: Kousuke Negishi, Takayoshi Kohmura, Kouichi Hagino, Taku Kogiso, Kenji Oono, Keigo Yarita, Akinori Sasaki, Koki Tamasawa, Takeshi G. Tsuru, Takaaki Tanaka, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Sodai Harada, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Toshinobu Miyoshi, Shunji Kishimoto, Ikuo Kurachi

Abstract: We have been develo** event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce e… ▽ More We have been develo** event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10\,keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 $\rm μ$m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2--5 keV X-ray beam collimated to 4 $\rm μm φ$ to the sensor layer side of the XRPIX3b at 6 $\rm μm$ pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura et al. has improved. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 7 pages, 11 figures, 1 table, accepted for Nuclear Instruments and Methods in Physics Research Section A (NIMA)

Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors

Authors: Keigo Yarita, Takayoshi Kohmura, Kouichi Hagino, Taku Kogiso, Kenji Oono, Kousuke Negishi, Koki Tamasawa, Akinori Sasaki, Satoshi Yoshiki, Takeshi Go Tsuru, Takaaki Tanaka, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Tsuyoshi Hamano , et al. (1 additional authors not shown)

Abstract: In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors… ▽ More In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution. △ Less

Submitted 22 October, 2018; originally announced October 2018.

Comments: 6 pages, 11figures, accepted for Nuclear Instruments and Methods in Physics Research Section A (NIMA)

Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure

Authors: Sodai Harada, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been develo** event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The… ▽ More We have been develo** event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 $\pm$ 1 eV and 335 $\pm$ 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 13 pages, 5 figures, 1 table, accepted for publication in NIMA on September 27, 2018

Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission

Authors: Takeshi G. Tsuru, Hideki Hayashi, Katsuhiro Tachibana, Sodai Harada, Hiroyuki Uchida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Takayoshi Kohmura, Kouichi Hagino, Kenji Ohno, Kohsuke Negishi, Keigo Yarita, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Shunta Nakanishi, Hiroki Kamehama , et al. (1 additional authors not shown)

Abstract: We have been develo** monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with… ▽ More We have been develo** monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode. △ Less

Submitted 29 July, 2018; originally announced July 2018.

Comments: 11 pages, 10 figures, Proceedings Volume 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

Authors: Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki Nagata, Kota Kasahara, Koya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu Ikeda, Shuji Matsuura, Takehiko Wada, Hirokazu Ishino, Atsuko Kibayashi, Hiromi Sato, Satoru Mima, Takuo Yoshida, Ryuta Hirose, Yukihiro Kato, Masasi Hazumi, Yasuo Arai, Ikuo Kurachi, Erik Ramgerg, Mark Kozlovsky, Paul Rubinov , et al. (6 additional authors not shown)

Abstract: We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a… ▽ More We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator. △ Less

Submitted 27 July, 2015; originally announced July 2015.

Comments: Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03

Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

Authors: Akihiro Koyama, Kenji Shimazoe, Hiroyuki Takahashi, Tadashi Orita, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Daisuke Nio, Ryutaro Hamasaki

Abstract: To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger av… ▽ More To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Comments: Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03

Compensation for TID Damage in SOI Pixel Devices

Authors: Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara, Wataru Aoyagi, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Takaki Hatsui, Togo Kudo, Kazuo Kobayashi

Abstract: We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath th… ▽ More We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy. △ Less

Submitted 21 July, 2015; originally announced July 2015.

Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

Authors: Mari Asano, Kazuhiko Hara, Daisuke Sekigawa, Shunsuke Honda, Naoshi Tobita, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi

Abstract: We are develo** monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in ad… ▽ More We are develo** monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~γ$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC. △ Less

Submitted 20 July, 2015; originally announced July 2015.

Comments: Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03

Compensation of radiation damages for SOI pixel detector via tunneling

Authors: Miho Yamada, Yasuo Arai, Ikuo Kurachi

Abstract: We are develo** monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-b… ▽ More We are develo** monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown. △ Less

Submitted 13 July, 2015; v1 submitted 10 July, 2015; originally announced July 2015.

Comments: 10 pages, 14 figures, Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement

Authors: Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai, Marie Mochizuki, Masao Okihara, Takaki Hatsui, Kazuhiko Hara, Yasuo Arai

Abstract: X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the rad… ▽ More X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement. △ Less

Submitted 29 June, 2015; originally announced June 2015.

Comments: Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03