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Unveiling phase diagram of the lightly doped high-Tc cuprate superconductors with disorder removed
Authors:
Kifu Kurokawa,
Shunsuke Isono,
Yoshimitsu Kohama,
So Kunisada,
Shiro Sakai,
Ryotaro Sekine,
Makoto Okubo,
Matthew D. Watson,
Timur K. Kim,
Cephise Cacho,
Shik Shin,
Takami Tohyama,
Kazuyasu Tokiwa,
Takeshi Kondo
Abstract:
The currently established electronic phase diagram of cuprates is based on a study of single- and double-layered compounds. These CuO$_2$ planes, however, are directly contacted with dopant layers, thus inevitably disordered with an inhomogeneous electronic state. Here, we solve this issue by investigating a 6-layered Ba$_2$Ca$_5$Cu$_6$O$_{12}$(F,O)$_2$ with inner CuO$_2$ layers, which are clean w…
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The currently established electronic phase diagram of cuprates is based on a study of single- and double-layered compounds. These CuO$_2$ planes, however, are directly contacted with dopant layers, thus inevitably disordered with an inhomogeneous electronic state. Here, we solve this issue by investigating a 6-layered Ba$_2$Ca$_5$Cu$_6$O$_{12}$(F,O)$_2$ with inner CuO$_2$ layers, which are clean with the extremely low disorder, by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. We find a tiny Fermi pocket with a do** level less than 1% to exhibit well-defined quasiparticle peaks which surprisingly lack the polaronic feature. This provides the first evidence that the slightest amount of carriers is enough to turn a Mott insulating state into a metallic state with long-lived quasiparticles. By tuning hole carriers, we also find an unexpected phase transition from the superconducting to metallic states at 4%. Our results are distinct from the nodal liquid state with polaronic features proposed as an anomaly of the heavily underdoped cuprates.
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Submitted 14 July, 2023;
originally announced July 2023.
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Observation of small Fermi pockets protected by clean CuO2 sheets of a high-Tc superconductor
Authors:
So Kunisada,
Shunsuke Isono,
Yoshimitsu Kohama,
Shiro Sakai,
Cedric Bareille,
Shunsuke Sakuragi,
Ryo Noguchi,
Kifu Kurokawa,
Kenta Kuroda,
Yukiaki Ishida,
Shintaro Adachi,
Ryotaro Sekine,
Timur K. Kim,
Cephise Cacho,
Shik Shin,
Takami Tohyama,
Kazuyasu Tokiwa,
Takeshi Kondo
Abstract:
The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-do** to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott phys…
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The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-do** to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott physics. To address this long-standing issue, we investigate the electronic structure of a five-layered Ba2Ca4Cu5O10(F,O)2 with inner CuO2 planes demonstrated to be cleanest ever in cuprates. Most surprisingly, we find small Fermi surface (FS) pockets closed around (pi/2,pi/2) consistently by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. The d-wave superconducting gap opens along the pocket, revealing the coexistence between the superconductivity and AF order in the same CuO2 sheet. Our data further indicate that the superconductivity can occur without contribution from the states near the antinodal region, which are shared by other competing excitations such as the charge density wave (CDW) and pseudogap states. This will have significant implications for understanding the superconductivity and puzzling Fermi arc phenomena in cuprates.
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Submitted 18 August, 2020;
originally announced August 2020.
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Devil's staircase transition of the electronic structures in CeSb
Authors:
Kenta Kuroda,
Y. Arai,
N. Rezaei,
S. Kunisada,
S. Sakuragi,
M. Alaei,
Y. Kinoshita,
C. Bareille,
R. Noguchi,
M. Nakayama,
S. Akebi,
M. Sakano,
K. Kawaguchi,
M. Arita,
S. Ideta,
K. Tanaka,
H. Kitazawa,
K. Okazaki,
M. Tokunaga,
Y. Haga,
S. Shin,
H. S. Suzuki,
R. Arita,
Takeshi Kondo
Abstract:
Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electro…
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Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electronic structure going through the devil's staircase is of special interest, which has, however, been elusive so far despite the 40-years of intense researches. Here we use bulk-sensitive angle-resolved photoemission spectroscopy and reveal the devil's staircase transition of the electronic structures. The magnetic reconstruction dramatically alters the band dispersions at each transition. We moreover find that the well-defined band picture largely collapses around the Fermi energy under the long-periodic modulation of the transitional phase, while it recovers at the transition into the lowest-temperature ground state. Our data provide the first direct evidence for a significant reorganization of the electronic structures and spectral functions occurring during the devil's staircase.
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Submitted 8 June, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Spintronic superconductor in a bulk layered material with natural spin-valve structure
Authors:
Shunsuke Sakuragi,
S. Sasaki,
R. Akashi,
R. Sakagami,
K. Kuroda,
C. Bareille,
T. Hashimoto,
T. Nagashima,
Y. Kinoshita,
Y. Hirata,
M. Shimozawa,
S. Asai,
T. Yajima,
S. Doi,
N. Tsujimoto,
S. Kunisada,
R. Noguchi,
K. Kurokawa,
N. Azuma,
K. Hirata,
Y. Yamasaki,
H. Nakao,
T. K. Kim,
C. Cacho,
T. Masuda
, et al. (7 additional authors not shown)
Abstract:
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties…
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Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties in the materials with antiferromagnetic (AFM) layers, so-called natural spin-valve structure, has been reported for the Dirac Fermion and topological/axion materials. However, a bulk crystal in which magnetic and superconducting layers are alternately stacked has not been realized until now, and the search for functional properties in it is an interesting yet unexplored field in material science. Here, we discover superconductivity providing such an ideal platform in EuSn2As2 with the van der Waals stacking of magnetic Eu layers and superconducting Sn-As layers, and present the first demonstration of a natural spin-valve effect on the superconducting current. Below the superconducting transition temperature (Tc), the electrical resistivity becomes zero in the in-plane direction. In contrast, it, surprisingly, remains finite down to the lowest temperature in the out-of-plane direction, mostly due to the structure of intrinsic magnetic Josephson junctions in EuSn2As2. The magnetic order of the Eu layers (or natural spin-valve) is observed to be extremely soft, allowing one to easy control of the out-of-plane to in-plane resistivities ratio from 1 to infinity by weak external magnetic fields. The concept of multi-functional materials with stacked magnetic-superconducting layers will open a new pathway to develop novel spintronic devices with magnetically controllable superconductivity.
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Submitted 22 January, 2020;
originally announced January 2020.
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Experimental determination of the topological phase diagram in Cerium monopnictides
Authors:
Kenta Kuroda,
M. Ochi,
H. S. Suzuki,
M. Hirayama,
M. Nakayama,
R. Noguchi,
C. Bareille,
S. Akebi,
S. Kunisada,
T. Muro,
M. D. Watson,
H. Kitazawa,
Y. Haga,
T. K. Kim,
M. Hoesch,
S. Shin,
R. Arita,
Takeshi Kondo
Abstract:
We use bulk-sensitive soft X-ray angle-resolved photoemission spectroscopy and investigate bulk electronic structures of Ce monopnictides (CeX; X=P, As, Sb and Bi). By exploiting a paradigmatic study of the band structures as a function of their spin-orbit coupling (SOC), we draw the topological phase diagram of CeX and unambiguously reveal the topological phase transition from a trivial to a nont…
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We use bulk-sensitive soft X-ray angle-resolved photoemission spectroscopy and investigate bulk electronic structures of Ce monopnictides (CeX; X=P, As, Sb and Bi). By exploiting a paradigmatic study of the band structures as a function of their spin-orbit coupling (SOC), we draw the topological phase diagram of CeX and unambiguously reveal the topological phase transition from a trivial to a nontrivial regime in going from CeP to CeBi induced by the band inversion. The underlying mechanism of the topological phase transition is elucidated in terms of SOC in concert with their semimetallic band structures. Our comprehensive observations provide a new insight into the band topology hidden in the bulk of solid states.
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Submitted 20 July, 2017;
originally announced July 2017.
