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Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
Authors:
Motoya Shinozaki,
Takaya Abe,
Kazuma Matsumura,
Takumi Aizawa,
Takashi Kumasaka,
Tomohiro Otsuka
Abstract:
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe th…
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Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices.
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Submitted 17 April, 2024;
originally announced April 2024.
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Dynamics of quantum cellular automata electron transition in triple quantum dots
Authors:
Takumi Aizawa,
Motoya Shinozaki,
Yoshihiro Fujiwara,
Takeshi Kumasaka,
Wataru Izumida,
Arne Ludwig,
Andreas D. Wieck,
Tomohiro Otsuka
Abstract:
The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a tripl…
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The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a triple quantum dot by using fast charge-state readout realized by rf reflectometry. We observe real-time charge transitions and analyze the tunneling rate comparing with the first-order tunneling processes. We also measure the gate voltage dependence of the QCA transition and show that it can be controlled by the voltage.
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Submitted 10 March, 2024;
originally announced March 2024.
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Kondo effect in electrostatically defined ZnO quantum dots
Authors:
Kosuke Noro,
Yusuke Kozuka,
Kazuma Matsumura,
Takeshi Kumasaka,
Yoshihiro Fujiwara,
Atsushi Tsukazaki,
Masashi Kawasaki,
Tomohiro Otsuka
Abstract:
Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of…
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Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO.
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Submitted 21 November, 2023;
originally announced November 2023.
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Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
Authors:
Yoshihiro Fujiwara,
Motoya Shinozaki,
Kazuma Matsumura,
Kosuke Noro,
Riku Tataka,
Shoichi Sato,
Takeshi Kumasaka,
Tomohiro Otsuka
Abstract:
Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demons…
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Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demonstrate proportional-integral-differential feedback control of the radio-frequency reflectometry in GaN nanodevices using a field-programmable gate array. This technique can maintain the operating point of the charge sensor with high sensitivity. The system also realizes a wide dynamic range and high sensor sensitivity through the monitoring of the feedback signal. This method has potential applications in exploring dynamics and instability of electronic and quantum states in nanostructures.
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Submitted 11 July, 2023;
originally announced July 2023.
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Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Authors:
Kazuma Matsumura,
Takaya Abe,
Takahito Kitada,
Takeshi Kumasaka,
Norikazu Ito,
Taketoshi Tanaka,
Ken Nakahara,
Tomohiro Otsuka
Abstract:
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and…
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Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential.
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Submitted 13 April, 2023;
originally announced April 2023.
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Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers
Authors:
Riku Tataka,
Alka Sharma,
Tomoya Johmen,
Takeshi Kumasaka,
Motoya Shinozaki,
Yong P. Chen,
Tomohiro Otsuka
Abstract:
The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the…
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The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a step** stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems.
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Submitted 21 October, 2022;
originally announced October 2022.
