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Tuning the interlayer coupling in La0.7Sr0.3Mn0.95Ru0.05O3 / LaNiO3 multilayers with perpendicular magnetic anisotropy
Authors:
Jörg Schöpf,
Valentina Piva,
Paul H. M. van Loosdrecht,
Ionela Lindfors-Vrejoiu,
Padraic Shafar,
Divine P. Kumah,
Xuanyi Zhang,
Lide Yao,
Sebastian van Dijken
Abstract:
In ferromagnetic oxide epitaxial multilayers, magnetic properties and interlayer coupling are determined by a variety of factors. Beyond the contribution of interlayer exchange coupling, strain and interfacial effects, such as structural reconstructions or charge transfer, play significant roles, resulting in complex magnetic behaviour. In this study the interlayer coupling of ferromagnetic La0.7S…
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In ferromagnetic oxide epitaxial multilayers, magnetic properties and interlayer coupling are determined by a variety of factors. Beyond the contribution of interlayer exchange coupling, strain and interfacial effects, such as structural reconstructions or charge transfer, play significant roles, resulting in complex magnetic behaviour. In this study the interlayer coupling of ferromagnetic La0.7Sr0.3Mn0.95Ru0.05O3 (LSMRO) layers (8 nm thick) was investigated, when separated by epitaxial spacers of paramagnetic metallic LaNiO3 (LNO), in stacks exhibiting perpendicular magnetic anisotropy. By varying the thickness of the spacer, it was found that the coupling between two LSMRO layers changes from antiferromagnetic (with a 4 unit cell thick LNO spacer) to ferromagnetic (with a 6 unit cells thick LNO spacer). For multilayers comprising five LSMRO layers and a 4 unit cell thick LNO spacer, the antiferromagnetic coupling was preserved. However, the effective magnetic anisotropy changed, causing the magnetization to cant more towards the in-plane direction. This behavior was corroborated by X-ray magnetic circular dichroism (XMCD) investigations at the Mn and Ni L3-edges. The XMCD results indicated that the 4 unit cells thick LNO spacer in the multilayer become magnetically ordered, closely following the magnetization of adjacent LSMRO layers.
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Submitted 25 June, 2024;
originally announced June 2024.
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The structure of Ferroelectric BaBiO$_3$/BaTiO$_3$ Interfaces grown by Molecular Beam Epitaxy
Authors:
Merve Baksi,
Divine P. Kumah
Abstract:
We investigate the lattice structure of heterostructures comprising of ferroelectric BaTiO$_3$ (BTO) thin films and BaBiO$_3$ (BBO), the insulating parent-compound of the high Tc superconductor. Motivated by theoretical predictions of exotic phenomena in BBO-based heterostructures including interfacial conductivity, superconductivity and topologically-protected states, we synthesize BTO/BBO hetero…
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We investigate the lattice structure of heterostructures comprising of ferroelectric BaTiO$_3$ (BTO) thin films and BaBiO$_3$ (BBO), the insulating parent-compound of the high Tc superconductor. Motivated by theoretical predictions of exotic phenomena in BBO-based heterostructures including interfacial conductivity, superconductivity and topologically-protected states, we synthesize BTO/BBO heterostructures by molecular beam epitaxy and characterize their structural properties by in-situ reflection high energy electron diffraction and ex-situ high-resolution synchrotron X-ray diffraction, Raman spectroscopy and piezoforce microscopy. For heterostructures with 4 uc BBO layers, reciprocal space maps indicate strain relaxation relative to the SrTiO$_3$ substrate. We observe a strong tetragonal distortion for heterostructures with 2 unit cells BBO coherently strained to the BTO layers. Raman spectroscopy measurements indicate a suppression of the breathing mode distortion associated with the charge density wave in bulk BBO. The ferroelectric properties of the system are confirmed by piezoforce microscopy measurements. The coupling between the ferroelectric polarization and the electronic states in BBO may potentially serve as a starting point for tunable electrostatic do** to realize the novel predicted states in the atomically-thin BBO layers.
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Submitted 28 May, 2024;
originally announced May 2024.
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The role of interfacial interactions and oxygen vacancies in tuning magnetic anisotropy in LaCrO$_{3}$/LaMnO$_{3}$ heterostructures
Authors:
Xuanyi Zhang,
Athby Al-Tawhid,
Padraic Schafer,
Zhan Zhang,
Divine P. Kumah
Abstract:
The interplay of lattice, electronic, and spin degrees of freedom at epitaxial complex oxide interfaces provides a route to tune their magnetic ground states. Unraveling the competing contributions is critical for tuning their functional properties. We investigate the relationship between magnetic ordering and magnetic anisotropy and the lattice symmetry, oxygen content, and film thickness in comp…
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The interplay of lattice, electronic, and spin degrees of freedom at epitaxial complex oxide interfaces provides a route to tune their magnetic ground states. Unraveling the competing contributions is critical for tuning their functional properties. We investigate the relationship between magnetic ordering and magnetic anisotropy and the lattice symmetry, oxygen content, and film thickness in compressively strained LaMnO$_3$/LaCrO$_3$ superlattices. Mn-O-Cr antiferromagnetic superexchange interactions across the heterointerface resulting in a net ferrimagnetic magnetic structure. Bulk magnetometry measurements reveal isotropic in-plane magnetism for as-grown oxygen-deficient thinner thin samples due to equal fractions of orthorhombic a+a-c-, and a-a+c- twin domains. As the superlattice thickness is increased, in-plane magnetic anisotropy emerges as the fraction of the a+a-c- domain increases. On annealing in oxygen, the suppression of oxygen vacancies results in a contraction of the lattice volume, and an orthorhombic to rhombohedral transition leads to isotropic magnetism independent of the film thickness. The complex interactions are investigated using high-resolution synchrotron diffraction and X-ray absorption spectroscopy. These results highlight the role of the evolution of structural domains with film thickness, interfacial spin interactions, and oxygen-vacancy-induced structural phase transitions in tuning the magnetic properties of complex oxide heterostructures.
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Submitted 6 March, 2024;
originally announced March 2024.
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Thermal conductivity of Barium Bismuthate at low temperatures
Authors:
A. Henriques,
D. M. N. Oliveira,
M. Baksi,
M. Naveed,
W. H. Brito,
J. Larrea-Jimenéz,
D. Kumah,
S. Wirth,
V. Martelli
Abstract:
The perovskite BaBiO$_3$ crystallizes in a cubic structure and undergoes structural transitions toward lower symmetry phases upon cooling. The two low-temperature monoclinic phases are insulating, and the origin of this unexpected non-metallic character has been under debate. Both monoclinic phases exhibit tilting and breathing distortions, which are connected with the insulating nature of this co…
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The perovskite BaBiO$_3$ crystallizes in a cubic structure and undergoes structural transitions toward lower symmetry phases upon cooling. The two low-temperature monoclinic phases are insulating, and the origin of this unexpected non-metallic character has been under debate. Both monoclinic phases exhibit tilting and breathing distortions, which are connected with the insulating nature of this compound and may have important effects on phononic heat conductivity. Here, we report the first thermal conductivity measurement, $κ$(T), in pristine polycrystalline BaBiO$_3$ from 1.5 K to 310 K. At low and intermediate temperatures, we observe features reminiscent of a glass-like behavior, whereas at high-temperatures we find a downturn - typical of a crystalline solid. We compare our findings with available data of other recently investigated perovskite oxides displaying similar temperature dependence.
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Submitted 25 August, 2023;
originally announced August 2023.
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In-situ scattering studies of superconducting vacancy-ordered monoclinic TiO thin films
Authors:
Merve Baksi,
Hawoong Hong,
Divine P. Kumah
Abstract:
We investigate the structural and transport properties of vacancy-ordered monoclinic superconducting $\mathrm{TiO}$ thin films grown by molecular beam epitaxy. The evolution of the crystal structure during growth is monitored by in-situ synchrotron X-ray diffraction. Long-range ordering of Ti and O vacancies in the disordered cubic phase stabilizes the vacancy-ordered monoclinic TiO phase. The red…
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We investigate the structural and transport properties of vacancy-ordered monoclinic superconducting $\mathrm{TiO}$ thin films grown by molecular beam epitaxy. The evolution of the crystal structure during growth is monitored by in-situ synchrotron X-ray diffraction. Long-range ordering of Ti and O vacancies in the disordered cubic phase stabilizes the vacancy-ordered monoclinic TiO phase. The reduced structural disorder arising from vacancy-ordering is correlated with a superconductor-metal transition (SMT) in contrast to the superconductor-insulator transition (SIT) observed in cubic TiO, orthorhombic $Ti_2O_3$, and the Magneli $γ-Ti_3O_5$ and $γ-Ti_4O_7$ phase. Magnetoresistance measurements for the SIT phases indicate superconducting fluctuations persisting in the normal phase. These results confirm the role of disorder related to Ti and O vacancies and structural inhomogeneity in determining the electronic properties of the normal state of titanium oxide-based superconductors.
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Submitted 18 September, 2023; v1 submitted 26 May, 2023;
originally announced May 2023.
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Enhanced Critical Field of Superconductivity at an Oxide Interface
Authors:
Athby H. Al-Tawhid,
Samuel J. Poage,
Salva Salmani-Rezaie,
Shalinee Chikara,
David A. Muller,
Divine P. Kumah,
Maria N. Gastiasoro,
Jose Lorenzana,
Kaveh Ahadi
Abstract:
The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The sup…
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The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The superconducting order parameter is highly sensitive to carrier density. We argue that spin-orbit coupling drives the formation of anomalous quasiparticles with vanishing magnetic moment, providing the condensate significant immunity against magnetic fields beyond the Pauli paramagnetic limit. These results offer design opportunities for superconductors with extreme resilience against magnetic field.
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Submitted 27 April, 2023;
originally announced April 2023.
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Superconducting Phase of $\mathrm{Ti_xO_y}$ Thin Films Grown by Molecular Beam Epitaxy
Authors:
Yasemin Ozbek,
Cooper Brooks,
Athby Al-Tawhid,
Xuanyi Zhang,
Vladmir Stoica,
Zhan Zhang,
Divine P. Kumah
Abstract:
We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure, $P_{Ox}$, for films grown on (…
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We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure, $P_{Ox}$, for films grown on (0001)-$\mathrm{Al_2 O_3}$ substrates at 850$^{\circ}$ C. A cubic $c-\mathrm{TiO_{1\pmδ}}$ buffer layer is formed for low O/Ti ratios while a corundum cr-$\mathrm{Ti_2 O_3}$ layer is formed under higher oxidizing conditions. Metallicity is observed for c-$\mathrm{TiO_{1-δ}}$ buffer layers. The superconducting $\mathrm{γ-Ti_3 O_5}$ Magnéli phase is found to nucleate on a c-$\mathrm{TiO_{1-δ}}$ buffer for intermediate $P_{Ox}$ conditions and an insulator-superconducting transition is observed at 4.5 K (T$_C^{onset}=6 K$) for 85 nm thick films. Strain relaxation of the $\mathrm{γ-Ti_3 O_5}$ occurs with increasing film thickness and correlates with a thickness-dependent increase in T$_C$ observed for $\mathrm{Ti_xO_y}$ thin films.
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Submitted 1 December, 2022; v1 submitted 2 March, 2022;
originally announced March 2022.
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Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films
Authors:
Xuanyi Zhang,
Aubrey N. Penn,
Lena Wysocki,
Zhan Zhang,
Paul H. M. van Loosdrecht,
Lior Kornblum,
James M. LeBeau,
Ionela Lindfors-Vrejoiu,
Divine P. Kumah
Abstract:
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetr…
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Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO$_3$ films grown on Nb-doped SrTiO$_3$ substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO$_3$.
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Submitted 3 February, 2022;
originally announced February 2022.
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Coexistence of superconductivity and weak anti-localization at KTaO3 (111) interfaces
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) i…
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The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) interfaces. A remnant, saturating resistance persists below the transition temperature as superconducting puddles fail to reach phase coherence. Signatures of weak anti-localization are observed below the superconducting transition, suggesting the coexistence of superconductivity and weak anti-localization. The superconducting interfaces show roughly one order of magnitude larger weak anti-localization correction, compared to non-superconducting interfaces, alluding to a relatively large coherence length in these interfaces.
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Submitted 20 September, 2021;
originally announced September 2021.
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Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100)
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Divine . P. Kumah
Abstract:
The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly…
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The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron X-ray crystal truncation rods and reciprocal space map**, an enhanced conductivity in STO/LTO/SrO- terminated STO buffers compared to heterostructures with TiO$_2$-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La$_{1-x}$Sr$_x$TiO$_3$. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.
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Submitted 17 September, 2021;
originally announced September 2021.
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Oxygen vacancy-induced anomalous Hall effect in a nominally non-magnetic oxide
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Douglas L. Irving,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic cro…
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The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples using first principles calculations and quantitative magnetometry. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to anomalous Hall effect. The anomalous Hall conductivity becomes insensitive to scattering rate in the low temperature limit (T<5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations describe a detailed picture of many-body interactions, triggering anomalous Hall effect in a non-magnetic system.
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Submitted 27 December, 2022; v1 submitted 16 September, 2021;
originally announced September 2021.
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Interface-driven magnetic anisotropy in relaxed La$_{0.7}$Sr$_{0.3}$CrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on MgO
Authors:
Sanaz Koohfar,
Yasemin Ozbek,
Hayden S. Bland,
Zhan Zhang,
Divine P. Kumah
Abstract:
We investigate the structural and magnetic properties of La$_{0.7}$Sr$_{0.3}$CrO$_3$ (LSCO)/La$_{0.7}$Sr$_{0.3}$MnO$_3$(LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2-3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and hig…
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We investigate the structural and magnetic properties of La$_{0.7}$Sr$_{0.3}$CrO$_3$ (LSCO)/La$_{0.7}$Sr$_{0.3}$MnO$_3$(LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2-3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron X-ray reciprocal space map**. We find that the presence of the LSCO spacer and cap** layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses on the order of 2 uc with the magnetic easy axis oriented in the film plane. Net magnetic moments of 1.4 and 2.4 $μ_B$/Mn are measured for [2 uc LSCO/ 2 uc LSMO] and [2 uc LSCO/ 4 uc LSMO] superlattices, respectively by SQUID magnetometry. The effective magnetic anisotropy of the relaxed [2 uc LSCO/ 4 uc LSMO] heterostructure is found to be an order of magnitude higher than bulk LSMO highlighting the critical role of interfacial magnetic exchange interactions in tuning magnetic anisotropy at complex oxide interfaces.
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Submitted 14 October, 2020;
originally announced October 2020.
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The Future of the Correlated Electron Problem
Authors:
A. Alexandradinata,
N. P. Armitage,
Andrey Baydin,
Wenli Bi,
Yue Cao,
Hitesh J. Changlani,
Eli Chertkov,
Eduardo H. da Silva Neto,
Luca Delacretaz,
Ismail El Baggari,
G. M. Ferguson,
William J. Gannon,
Sayed Ali Akbar Ghorashi,
Berit H. Goodge,
Olga Goulko,
G. Grissonnanche,
Alannah Hallas,
Ian M. Hayes,
Yu He,
Edwin W. Huang,
Anshul Kogar,
Divine Kumah,
Jong Yeon Lee,
A. Legros,
Fahad Mahmood
, et al. (22 additional authors not shown)
Abstract:
A central problem in modern condensed matter physics is the understanding of materials with strong electron correlations. Despite extensive work, the essential physics of many of these systems is not understood and there is very little ability to make predictions in this class of materials. In this manuscript we share our personal views on the major open problems in the field of correlated electro…
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A central problem in modern condensed matter physics is the understanding of materials with strong electron correlations. Despite extensive work, the essential physics of many of these systems is not understood and there is very little ability to make predictions in this class of materials. In this manuscript we share our personal views on the major open problems in the field of correlated electron systems. We discuss some possible routes to make progress in this rich and fascinating field. This manuscript is the result of the vigorous discussions and deliberations that took place at Johns Hopkins University during a three-day workshop January 27, 28, and 29, 2020 that brought together six senior scientists and 46 more junior scientists. Our hope, is that the topics we have presented will provide inspiration for others working in this field and motivation for the idea that significant progress can be made on very hard problems if we focus our collective energies.
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Submitted 13 July, 2022; v1 submitted 1 October, 2020;
originally announced October 2020.
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Effect of strain on magnetic and orbital ordering of LaSrCrO$_3$/LaSrMnO$_3$ heterostructures
Authors:
Sanaz Koohfar,
Alexandru B. Georgescu,
Ingrid Hallsteinsen,
Ritesh Sachan,
Manuel A. Roldan,
Elke Arenholz,
Divine P. Kumah
Abstract:
We investigate the effect of strain and film thickness on the orbital and magnetic properties of LaSrCrO$_3$ (LSCO)/LaSrMnO$_3$ (LSMO) heterostructures using bulk magnetometry, soft X-ray magnetic spectroscopy, first-principles density functional theory, high-resolution electron microscopy and X-ray diffraction. We observe an anti-parallel ordering of the magnetic moments between the ferromagnetic…
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We investigate the effect of strain and film thickness on the orbital and magnetic properties of LaSrCrO$_3$ (LSCO)/LaSrMnO$_3$ (LSMO) heterostructures using bulk magnetometry, soft X-ray magnetic spectroscopy, first-principles density functional theory, high-resolution electron microscopy and X-ray diffraction. We observe an anti-parallel ordering of the magnetic moments between the ferromagnetic LSMO layers and the LSCO spacers leading to a strain-independent ferromagnetic ground state of the LSCO/LSMO heterostructures for LSMO layers as thin as 2 unit cells. As the LSMO thickness is increased, a net ferromagnetic state is maintained, however, the average magnetic moment per Mn is found to be dependent on the magnitude of the substrate-induced strain. The differences in the magnetic responses are related to preferential occupation of the Mn $x^2-y^2$ (in-plane) d-orbitals for tensile strain and $3z^2-r^2$ (out-of-plane) orbitals under compressive strain leading to competing ferromagnetic and anti-ferromagnetic exchange interactions within the LSMO layers. These results underscore the relative contributions of orbital, structural and spin degree of freedom and their tunability in atomically-thin crystalline complex oxide layers.
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Submitted 4 February, 2020; v1 submitted 7 November, 2019;
originally announced November 2019.
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Control of hidden ground-state order in NdNiO$_3$ superlattices
Authors:
Ankit S. Disa,
Alexandru B. Georgescu,
James L. Hart,
Divine P. Kumah,
Padraic Shafer,
Elke Arenholz,
Dario A. Arena,
Sohrab Ismail-Beigi,
Mitra L. Taheri,
Frederick J. Walker,
Charles H. Ahn
Abstract:
The combination of charge and spin degrees of freedom with electronic correlations in condensed matter systems leads to a rich array of phenomena, such as magnetism, superconductivity, and novel conduction mechanisms. While such phenomena are observed in bulk materials, a richer array of behaviors becomes possible when these degrees of freedom are controlled in atomically layered heterostructures,…
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The combination of charge and spin degrees of freedom with electronic correlations in condensed matter systems leads to a rich array of phenomena, such as magnetism, superconductivity, and novel conduction mechanisms. While such phenomena are observed in bulk materials, a richer array of behaviors becomes possible when these degrees of freedom are controlled in atomically layered heterostructures, where one can constrain dimensionality and impose interfacial boundary conditions. Here, we unlock a host of unique, hidden electronic and magnetic phase transitions in NdNiO$_3$ while approaching the two-dimensional (2D) limit, resulting from the differing influences of dimensional confinement and interfacial coupling. Most notably, we discover a new phase in fully 2D, single layer NdNiO$_3$, in which all signatures of the bulk magnetic and charge ordering are found to vanish. In addition, for quasi two-dimensional layers down to a thickness of two unit cells, bulk-type ordering persists but separates from the onset of insulating behavior in a manner distinct from that found in the bulk or thin film nickelates. Using resonant x-ray spectroscopies, first-principles theory, and model calculations, we propose that the single layer phase suppression results from a new mechanism of interfacial electronic reconstruction based on ionicity differences across the interface, while the phase separation in multi-layer NdNiO$_3$ emerges due to enhanced 2D fluctuations. These findings provide insights into the intertwined mechanisms of charge and spin ordering in strongly correlated systems in reduced dimensions and illustrate the ability to use atomic layering to access hidden phases.
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Submitted 20 September, 2018;
originally announced September 2018.
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Growth-Temperature Dependence of Conductivity at the LaCrO$_3$/SrTiO$_3$ (001) Interface
Authors:
A. H. Al-Tawhid,
J. R. Frick,
D. B. Dougherty,
D. P. Kumah
Abstract:
The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the…
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The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces show chemical intermixing and an interfacial lattice expansion. Angle resolved photoemission spectroscopy of 2 and 4 uc metallic LCO/STO shows no intensity near the Fermi level indicating that the conducting region is occurring deep enough in the substrate to be inaccessible to photoemission spectroscopy. Post-growth annealing in flowing oxygen causes a reduction in the sheet carrier concentration and mobility for the metallic interface while annealing the insulating interface at high temperatures and low oxygen partial pressures results in metallicity. These results highlight the critical role of defects related to oxygen vacancies on the creation of mobile charge carriers at the LCO/STO heterointerface.
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Submitted 27 July, 2018;
originally announced July 2018.
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Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Alexander F. Kemper,
Divine P. Kumah
Abstract:
The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found…
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The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found to be polarized as a result of cation-anion ionic displacements perpendicular to the perovskite/semiconductor interface. We find a correlation between the observed buckling and valence band offsets at the SrZr$_{x}$Ti$_{1-x}$O$_3$/Ge interface. The theoretical valence band offsets for the polar structures are in agreement with reported X-ray photoelectron spectroscopy measurements. These results have important implications for the integration of functional oxide materials with established semiconductor based technologies.
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Submitted 28 June, 2018;
originally announced June 2018.
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Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon
Authors:
Kamyar Ahmadi-Majlan,
Tong-Jie Chen,
Zheng Hui Lim,
Patrick Conlin,
Ricky Hensley,
Dong Su,
Hanghui Chen,
Divine P. Kumah,
Joseph H. Ngai
Abstract:
We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scatter…
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We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scattering is observed, and insulating transport emerges. Consistent with a Mott-driven transition in bulk rare-earth titanates, the insulating behavior is described by activated transport, and the onset of insulating transport occurs near 1 electron per Ti occupation within the SrTiO3 well. We also discuss the role that structure and gradients in strain may play in enhancing the carrier density. The manipulation of metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.
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Submitted 24 October, 2017;
originally announced October 2017.
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Confinement of magnetism in atomically-thin $La_{0.7}Sr_{0.3}CrO_3$/$La_{0.7}Sr_{0.3}MnO_3$ heterostructures
Authors:
Sanaz Koohfar,
Alexandru Bogdan Georgescu,
Aubrey Penn,
James M. LeBeau,
Elke Arenholz,
Divine Philip Kumah
Abstract:
At crystalline interfaces where a valence mismatch exists, electronic and structural interactions may occur to relieve the polar mismatch leading to the stabilization of non-bulklike phases. We show that spontaneous reconstructions at polar $La_{0.7}Sr_{0.3}MnO_3$ interfaces are correlated with suppressed ferromagnetism for film thicknesses on the order of a unit cell. We investigate the structura…
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At crystalline interfaces where a valence mismatch exists, electronic and structural interactions may occur to relieve the polar mismatch leading to the stabilization of non-bulklike phases. We show that spontaneous reconstructions at polar $La_{0.7}Sr_{0.3}MnO_3$ interfaces are correlated with suppressed ferromagnetism for film thicknesses on the order of a unit cell. We investigate the structural and magnetic properties of valence-matched $La_{0.7}Sr_{0.3}CrO_3$ - $La_{0.7}Sr_{0.3}MnO_3$ interfaces using a combination of high-resolution electron microscopy, first principles theory, synchrotron X-ray scattering and magnetic spectroscopy and temperature-dependent magnetometry. A combination of an antiferromagnetic coupling between the $La_{0.7}Sr_{0.3}CrO_3$ and $La_{0.7}Sr_{0.3}MnO_3$ layers and a suppression of interfacial polar distortions are found to result in robust long range ferromagnetic ordering for ultra-thin $La_{0.7}Sr_{0.3}MnO_3$. These results underscore the critical importance of interfacial structural and magnetic interactions in the design of devices based on two-dimensional oxide magnetic systems.
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Submitted 3 May, 2019; v1 submitted 20 October, 2017;
originally announced October 2017.
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Structural Distortions At Polar Manganite Interfaces
Authors:
S. Koohfar,
A. S. Disa,
M. Marshall,
F. J. Walker,
C. H. Ahn,
D. P. Kumah
Abstract:
Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. The physical structure between non-polar SrTiO$_3$ and polar La…
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Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. The physical structure between non-polar SrTiO$_3$ and polar La$_{1-x}$Sr$_x$MnO$_3$(x=0.2) is investigated using high resolution synchrotron x-ray diffraction to directly determine the role of structure in compensating the polar discontinuity. At both the oxide-oxide interface and vacuum-oxide interfaces, the lattice is found to expand and rumple along the growth direction. The SrTiO$_3$/La$_{1-x}$Sr$_x$MnO$_3$ interface also exhibits intermixing of La and Sr over a few unit cells. The results, hence, demonstrate that polar distortions and ionic intermixing coexist and both pathways play a significant role at interfaces with polar discontinuities.
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Submitted 4 May, 2017; v1 submitted 17 April, 2017;
originally announced April 2017.
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The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors
Authors:
Ke Zou,
Subhasish Mandal,
Stephen Albright,
Rui Peng,
Yujia Pu,
Divine Kumah,
Claudia Lau,
Georg Simon,
Omur E. Dagdeviren,
Xi He,
Ivan Bozovic,
Udo D. Schwarz,
Eric I. Altman,
Donglai Feng,
Fred J. Walker,
Sohrab Ismail-Beigi,
Charles H. Ahn
Abstract:
We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab in…
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We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor.
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Submitted 4 May, 2016;
originally announced May 2016.
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Oxide 2D electron gases as a route for high carrier densities on (001) Si
Authors:
Lior Kornblum,
Eric N. **,
Divine P. Kumah,
Alexis T. Ernst,
Christine C. Broadbridge,
Charles H. Ahn,
Fred J. Walker
Abstract:
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing…
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Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing $GdTiO_3-SrTiO_3$ on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, with $\sim 9\times 10^{13} \; cm^{-2}$ electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.
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Submitted 11 May, 2015;
originally announced May 2015.
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Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices
Authors:
Chi Xiong,
Wolfram H. P. Pernice,
Joseph H. Ngai,
James W. Reiner,
Divine Kumah,
Frederick J. Walker,
Charles H. Ahn,
Hong X. Tang
Abstract:
The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric Ba…
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The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 plus minus 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.
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Submitted 4 February, 2014; v1 submitted 16 January, 2014;
originally announced January 2014.
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Hysteretic electrical transport in BaTiO$_3$/Ba$_{1-x}$Sr$_x$TiO$_3$/Ge heterostructures
Authors:
J. H. Ngai,
D. P. Kumah,
C. H. Ahn,
F. J. Walker
Abstract:
We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion mismatch between BaTiO$_3$ and Ge to be overcome to achieve $c$-axis oriented growth. The conduction bands of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ are nearly ali…
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We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion mismatch between BaTiO$_3$ and Ge to be overcome to achieve $c$-axis oriented growth. The conduction bands of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.
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Submitted 13 November, 2013;
originally announced November 2013.
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Modifying the Electronic Orbitals of Nickelate Heterostructures Via Structural Distortions
Authors:
Hanghui Chen,
Divine P. Kumah,
Ankit S. Disa,
Frederick J. Walker,
Charles H. Ahn,
Sohrab Ismail-Beigi
Abstract:
We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions…
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We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions about the Ni site via charge transfer and internal electric fields, and (ii) the use of three component (tri-component) superlattices to break inversion symmetry. We use {\it ab initio} calculations to implement the approach, with experimental verification of the critical structural motif that enables the design to succeed.
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Submitted 11 September, 2013;
originally announced September 2013.
