Showing 1–2 of 2 results for author: Kulyk, B

Ultrafast laser pulse characterization by THG d-scan using optically enhanced graphene coatings

Authors: Tiago Gomes, Miguel Canhota, Bohdan Kulyk, Alexandre Carvalho, Bruno Jarrais, António José Fernandes, Cristina Freire, Florinda Costa, Helder Crespo

Abstract: We have successfully functionalized 5 layers of TCVD-grown graphene by photoassisted transfer hydrogenation reaction with formic acid, in order to increase its nonlinear optical response and laser-induced damage resilience. Using the functionalized graphene samples, we were able to fully characterize sub-10 fs ultrashort laser pulses using THG dispersion-scan, with results that are in excellent ag… ▽ More We have successfully functionalized 5 layers of TCVD-grown graphene by photoassisted transfer hydrogenation reaction with formic acid, in order to increase its nonlinear optical response and laser-induced damage resilience. Using the functionalized graphene samples, we were able to fully characterize sub-10 fs ultrashort laser pulses using THG dispersion-scan, with results that are in excellent agreement with the ones obtained with pristine graphene samples. △ Less

Submitted 3 June, 2022; originally announced June 2022.

Electrophysical characteristics of near-surface layers in p-Si crystals with sputtered Al films and subjected to elastic deformation

Authors: Bohdan Pavlyk, Markijan Kushlyk, Roman Didyk, Joseph Shykorjak, Dmytro Slobodzyan, Bohdan Kulyk

Abstract: The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in the dependence of the specimen resistance on the elastic strain magnitude. The maximum depth of the de… ▽ More The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in the dependence of the specimen resistance on the elastic strain magnitude. The maximum depth of the defect capture has been calculated on the basis of the energy of interaction between the deformed layer and dislocations. △ Less

Submitted 4 September, 2013; originally announced September 2013.

Comments: 6 pages, 7 figures

MSC Class: 74K99 ACM Class: J.2

Journal ref: Ukrainian Journal of Physics, 2009, Vol. 54, no. 1-2, pp. 207-215