-
Ultracompact single-photon sources of linearly polarized vortex beams
Authors:
Xu**g Liu,
Yinhui Kan,
Shailesh Kumar,
Liudmilla F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Changying Zhao,
Sergey I. Bozhevolnyi
Abstract:
Ultracompact chip-integrated single-photon sources of collimated beams with polarizationencoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam sha** and polarization enc…
▽ More
Ultracompact chip-integrated single-photon sources of collimated beams with polarizationencoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam sha** and polarization encoding functionalities remains so far elusive. Here, we present ultracompact single-photon sources of linearly polarized vortex beams based on chip-integrated quantum emitter-coupled metasurfaces, which are meticulously designed by fully exploiting the potential of nanobrick arrayed metasurfaces. We first demonstrate on-chip single-photon generation of high-purity linearly polarized vortex beams with prescribed topological charges of -1, 0, and +1. We further realize multiplexing of single-photon emission channels with orthogonal linear polarizations carrying different topological charges and demonstrate their entanglement. Our work illustrates the potential and feasibility of ultracompact quantum emitter-coupled metasurfaces as a new quantum optics platform for realizing chip-integrated high-dimensional single-photon sources.
△ Less
Submitted 14 May, 2023;
originally announced May 2023.
-
Scattering holography designed metasurfaces for channeling single-photon emission
Authors:
Danylo Komisar,
Shailesh Kumar,
Yinhui Kan,
Chao Meng,
Liudmilla F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Sergey I. Bozhevolnyi
Abstract:
Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriatel…
▽ More
Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves. Using holographic metasurfaces fabricated around nanodiamonds with single Ge vacancy centers, we experimentally demonstrate on-chip integrated efficient generation of two well-collimated single-photon beams propagating along different 15-degree off-normal directions with orthogonal linear polarizations.
△ Less
Submitted 6 March, 2023;
originally announced March 2023.
-
Sub-to-super-Poissonian photon statistics in cathodoluminescence of color center ensembles in isolated diamond crystals
Authors:
Saskia Fiedler,
Sergii Morozov,
Danylo Komisar,
Evgeny A. Ekimov,
Liudmila F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Shailesh Kumar,
Christian Wolff,
Sergey I. Bozhevolnyi,
N. Asger Mortensen
Abstract:
Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond…
▽ More
Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond crystal. While optical excitation favors non-synchronized excitation of color centers within an ensemble, electron-beam excitation can synchronize the emitters and thereby provides a control of the second-order correlation function $g_2(0)$. In this letter, we demonstrate experimentally that the photon stream from an ensemble of color centers can exhibit $g_2(0)$ both above and below unity. Such a photon source based on an ensemble of few color centers in a diamond crystal provides a highly tunable platform for informational technologies operating at room temperature.
△ Less
Submitted 7 February, 2023;
originally announced February 2023.
-
Prolonged orbital relaxation by locally modified phonon density of states for SiV$^-$ center in nanodiamonds
Authors:
Marco Klotz,
Konstantin G. Fehler,
Elena S. Steiger,
Stefan Häußler,
Richard Waltrich,
Prithvi Reddy,
Liudmila F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Marcus W. Doherty,
Alexander Kubanek
Abstract:
Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected…
▽ More
Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks, the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100 nm. The method works at liquid Helium temperatures of few Kelvin and in the low-strain regime.
△ Less
Submitted 2 August, 2021; v1 submitted 30 July, 2021;
originally announced July 2021.
-
Preparing single SiV$^{-}$ center in nanodiamonds for external, optical coupling with access to all degrees of freedom
Authors:
Stefan Häußler,
Lukas Hartung,
Konstantin G. Fehler,
Lukas Antoniuk,
Liudmila F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Fedor Jelezko,
Alexander Kubanek
Abstract:
Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum plasmonics. Here, we prepare nanodiamonds carrying single, negatively-charged silicon-vacancy centers for evanescent optical coupling with access to all degrees…
▽ More
Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum plasmonics. Here, we prepare nanodiamonds carrying single, negatively-charged silicon-vacancy centers for evanescent optical coupling with access to all degrees of freedom by means of atomic force nanomanipulation. The color centers feature excellent optical properties, comparable to silicon-vacancy centers in bulk diamond, resulting in a resolvable fine structure splitting, a linewidth close to the Fourier-Transform limit under resonant excitation and a good polarization contrast. We determine the orbital relaxation time $T_{1}$ of the orbitally split ground states and show that all optical properties are conserved during translational nanomanipulation. Furthermore, we demonstrate the rotation of the nanodiamonds. In contrast to the translational operation, the rotation leads to a change in polarization contrast. We utilize the change in polarization contrast before and after nanomanipulation to determine the rotation angle. Finally, we evaluate the likelihood for indistinguishable, single photon emission of silicon-vacancy centers located in different nanodiamonds. Our work enables ideal evanescent, optical coupling of distant nanodiamonds containing silicon-vacancy centers with applications in the realization of quantum networks, quantum repeaters or complex quantum systems.
△ Less
Submitted 2 October, 2019; v1 submitted 5 August, 2019;
originally announced August 2019.
-
Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm
Authors:
Sumin Choi,
Viatcheslav N. Agafonov,
Valery A. Davydov,
L. F. Kulikova,
Taras Plakhotnik
Abstract:
We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/…
▽ More
We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and $-0.037(2)$ K$^{-1}$, respectively. Si,P-doped nanodiamonds show significantly smaller (up to 35 % for the width) susceptibilities and prove control of SiV properties with additional chemical do**. It is argued that a significant contribution to the heating of the nanodiamonds induced by laser light can be intrinsic due to a high concentration and low luminescence quantum yield of SiV centers.
△ Less
Submitted 23 June, 2019;
originally announced June 2019.
-
Unidirectional single-photon emission from germanium-vacancy zero-phonon lines: Deterministic emitter-waveguide interfacing at plasmonic hot spots
Authors:
Hamidreza Siampour,
Ou Wang,
Vladimir A. Zenin,
Sergejs Boroviks,
Petr Siyushev,
Yuanqing Yang,
Valery A. Davydov,
Liudmila F. Kulikova,
Viatcheslav N. Agafonov,
Alexander Kubanek,
N. Asger Mortensen,
Fedor Jelezko,
Sergey I. Bozhevolnyi
Abstract:
Striving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (> 10^6 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of th…
▽ More
Striving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (> 10^6 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of their ground states as compared to that found for GeV centers in bulk diamonds (i.e., up to 870 GHz in highly strained NDs vs 150 GHz in bulk). Utilizing lithographic alignment techniques, we demonstrate an integrated nanophotonic platform for deterministic interfacing plasmonic waveguides with isolated GeV centers in NDs that enables 10-fold enhancement of single-photon decay rates along with the emission direction control by judiciously designing and positioning a Bragg reflector. This approach allows one to realize the unidirectional emission from single-photon dipolar sources introducing a novel method that is alternative to the propagation-direction-dependent techniques based on chiral interactions or topological protection. The developed plasmon-based nanophotonic platform opens thereby new perspectives for quantum nanophotonics in general and for realizing entanglement between single photons and spin qubits, in particular.
△ Less
Submitted 13 March, 2019;
originally announced March 2019.
-
Single Silicon Vacancy Centers in 10-Nanometer Diamonds for Quantum Information Applications
Authors:
Stepan V. Bolshedvorskii,
Anton I. Zeleneev,
Vadim V. Vorobyov,
Vladimir V. Soshenko,
Olga R. Rubinas,
Leonid A. Zhulikov,
Pavel A. Pivovarov,
Vadim N. Sorokin,
Andrey N. Smolyaninov,
Liudmila F. Kulikova,
Anastasia S. Garanina,
Viatcheslav N. Agafonov,
Rustem E. Uzbekov,
Valery A. Davydov,
Alexey V. Akimov
Abstract:
Ultra-small, low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically…
▽ More
Ultra-small, low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images we verified presents of optically active color centers in single nanocrystals, and using second-order correlation measurements proved single-photon emission statistics of this nanodiamonds. This color centers have non-blinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line thus proving high quality of the nanodiamonds produced
△ Less
Submitted 15 May, 2019; v1 submitted 16 December, 2018;
originally announced December 2018.
-
On-chip excitation of single germanium-vacancies in nanodiamonds embedded in plasmonic waveguides
Authors:
Hamidreza Siampour,
Shailesh Kumar,
Valery A. Davydov,
Liudmila F. Kulikova,
Viatcheslav N. Agafonov,
Sergey I. Bozhevolnyi
Abstract:
Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrate on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds are produced to incorporate single germani…
▽ More
Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrate on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds are produced to incorporate single germanium-vacancy (GeV) centers, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) are fabricated on single crystalline silver plates so as to contain those of spin-casted nanodiamonds that are found to feature appropriate single GeV centers. The low-loss plasmonic configuration enabled the 532 nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV center is incorporated. The remote GeV emitter is thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~6-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, revealing the potential of our approach for on-chip realization of nanoscale functional quantum devices.
△ Less
Submitted 30 January, 2018;
originally announced January 2018.
-
All-optical nanoscale thermometry with silicon-vacancy centers in diamond
Authors:
Christian T. Nguyen,
Ruffin E. Evans,
Alp Sipahigil,
Mihir K. Bhaskar,
Denis D. Sukachev,
Viatcheslav N. Agafonov,
Valery A. Davydov,
Liudmila F. Kulikova,
Fedor Jelezko,
Mikhail D. Lukin
Abstract:
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs i…
▽ More
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs in $200\,\mathrm{nm}$ nanodiamonds as local temperature probes with $521\,\mathrm{ mK/\sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems.
△ Less
Submitted 17 August, 2017;
originally announced August 2017.
-
Experimental study of intrinsic multiple Andreev reflections effect in GdO(F)FeAs superconductor array junctions
Authors:
T. E. Kuzmicheva,
S. A. Kuzmichev,
M. G. Mikheev,
Ya. G. Ponomarev,
S. N. Tchesnokov,
Yu. F. Eltsev,
V. M. Pudalov,
A. V. Sadakov,
A. S. Usoltsev,
E. P. Khlybov,
L. F. Kulikova
Abstract:
We report the first observation of the intrinsic multiple Andreev reflections effect (IMARE) in S-n-S-...-S-arrays (S = superconductor, n = normal metal) formed by "break-junction" technique in GdO(F)FeAs superconductor (Tc = 48 - 53 K). We show that superconducting gap peculiarities at dI/dV-spectra sharpen dramatically in the arrays as compared with that in the single-contact spectra; this enabl…
▽ More
We report the first observation of the intrinsic multiple Andreev reflections effect (IMARE) in S-n-S-...-S-arrays (S = superconductor, n = normal metal) formed by "break-junction" technique in GdO(F)FeAs superconductor (Tc = 48 - 53 K). We show that superconducting gap peculiarities at dI/dV-spectra sharpen dramatically in the arrays as compared with that in the single-contact spectra; this enables to improve significantly accuracy of the bulk superconducting parameters determination. Using IMARE, we determined the large and the small gap values Δ_L = 11 +- 1.1 meV and Δ_S = 2.6 +- 0.4 meV. The BCS-ratio 2Δ_L/kTc^{local} = 5.0 - 5.9 > 3.52 (Tc^{local} is the contact area critical temperature) evidences for a strong electron-boson coupling. The results obtained agree well with our previous data by Andreev spectroscopy for single SnS-contacts.
△ Less
Submitted 21 February, 2013;
originally announced February 2013.
-
Multigap Superconductivity in GdFeAsO$_{0.88}$ Evidenced by SnS-Andreev Spectroscopy
Authors:
T. E. Shanygina,
S. A. Kuzmichev,
M. G. Mikheev,
Ya. G. Ponomarev,
S. N. Tchesnokov,
Yu. F. Eltsev,
V. M. Pudalov,
A. V. Sadakov,
A. S. Usol'tsev,
E. P. Khlybov,
L. F. Kulikova
Abstract:
Using intrinsic multiple Andreev reflection effect (IMARE) spectroscopy we studied superconducting properties of nearly optimal oxygen-deficient GdFeAsO$_{0.88}$ polycrystalline samples (bulk critical temperatures $T_C^{bulk} = 49 ÷52$\,K). Temperature dependences for two superconducting gaps $Δ_{L,S}(T)$ ($T_C^{local} = 48 ÷50$\,K) have been measured in the range from 4.2 to 50\,K. The…
▽ More
Using intrinsic multiple Andreev reflection effect (IMARE) spectroscopy we studied superconducting properties of nearly optimal oxygen-deficient GdFeAsO$_{0.88}$ polycrystalline samples (bulk critical temperatures $T_C^{bulk} = 49 ÷52$\,K). Temperature dependences for two superconducting gaps $Δ_{L,S}(T)$ ($T_C^{local} = 48 ÷50$\,K) have been measured in the range from 4.2 to 50\,K. The $Δ_{L,S}(T)$ dependences were found to deviate from the BCS-like function; this suggests an importance of the $k$-space (internal) proximity effect between the two condensates.
△ Less
Submitted 1 November, 2012;
originally announced November 2012.
-
Study of the Two-Gap Superconductivity in GdO(F)FeAs by ScS-Andreev Spectroscopy
Authors:
T. E. Shanygina,
Ya. G. Ponomarev,
S. A. Kuzmichev,
M. G. Mikheev,
S. N. Tchesnokov,
O. E. Omel'yanovsky,
A. V. Sadakov,
Yu. F. Eltsev,
V. M. Pudalov,
A. S. Usol'tsev,
E. P. Khlybov,
L. F. Kulikova
Abstract:
Current-voltage characteristics and dynamic conductance of the superconductor - constriction - superconductor junctions in GdO(F)FeAs polycrystalline samples with critical temperatures Tc^local = 46 - 53 K were investigated. Two superconducting gaps, the large Delta_L = 10.5 +- 2 meV, and the small one Delta_S = 2.3 +- 0.4 meV were clearly observed at T = 4.2 K. The 2Delta_L/kTc^local = 5.5 +- 1 r…
▽ More
Current-voltage characteristics and dynamic conductance of the superconductor - constriction - superconductor junctions in GdO(F)FeAs polycrystalline samples with critical temperatures Tc^local = 46 - 53 K were investigated. Two superconducting gaps, the large Delta_L = 10.5 +- 2 meV, and the small one Delta_S = 2.3 +- 0.4 meV were clearly observed at T = 4.2 K. The 2Delta_L/kTc^local = 5.5 +- 1 ratio gives support to the strong coupling mechanism which is responsible for the high Tc value. Temperature dependence of the large gap Delta_L(T) indicates the presence of intrinsic proximity effect (in k-space) between two superconducting condensates.
△ Less
Submitted 18 May, 2012;
originally announced May 2012.
-
Magnetic and Superconducting Properties of FeAs-based High-Tc Superconductors with Gd
Authors:
E. P. Khlybov,
O. E. Omelyanovsky,
A. Zaleski,
A. V. Sadakov,
D. R. Gizatulin,
L. F. Kulikova,
I. E. Kostyleva,
V. M. Pudalov
Abstract:
We report on successful synthesis under high pressure of a series of polycrystalline GdFeAs O_{1-x}F_x high-Tc superconductors with different oxygen deficiency x=0.12 - 0.16 and also with no fluorine. We have found that the high-pressure synthesis technique is crucial for obtaining almost single-phase superconducting materials: by synthesizing the same compounds with no pressure in ampoules we o…
▽ More
We report on successful synthesis under high pressure of a series of polycrystalline GdFeAs O_{1-x}F_x high-Tc superconductors with different oxygen deficiency x=0.12 - 0.16 and also with no fluorine. We have found that the high-pressure synthesis technique is crucial for obtaining almost single-phase superconducting materials: by synthesizing the same compounds with no pressure in ampoules we obtained non-superconducting materials with an admixture of incidental phases. Critical temperature for all the materials was in the range 40 to 53K. The temperature derivative of the critical field dHc2/dT is remarkably high, indicating potentially high value of the second critical field Hc2 ~ 130T.
△ Less
Submitted 9 October, 2009; v1 submitted 10 September, 2009;
originally announced September 2009.
