Showing 1–26 of 26 results for author: Kuhlmann, A V

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Authors: Eoin G. Kelly, Alexei Orekhov, Nico Hendrickx, Matthias Mergenthaler, Felix Schupp, Stephan Paredes, Rafael S. Eggli, Andreas V. Kuhlmann, Patrick Harvey-Collard, Andreas Fuhrer, Gian Salis

Abstract: In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach… ▽ More In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures, supplementary information

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

Authors: Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, Andreas Schenk

Abstract: We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-… ▽ More We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Comments: 4 pages, 6 figures, submitted to conference SISPAD 2022

Journal ref: Solid-State Electronics 200 (2023) 108550

Phase driving hole spin qubits

Authors: Stefano Bosco, Simon Geyer, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, J. Carlos Egues, Andreas V. Kuhlmann, Daniel Loss

Abstract: The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubi… ▽ More The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly non-trivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor (Si FinFET), we demonstrate a controllable suppression of resonant Rabi oscillations, and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Authors: Rafael S. Eggli, Simon Svab, Taras Patlatiuk, Dominique A. Trüssel, Miguel J. Carballido, Pierre Chevalier Kwon, Simon Geyer, Ang Li, Erik P. A. M. Bakkers, Andreas V. Kuhlmann, Dominik M. Zumbühl

Abstract: Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deterior… ▽ More Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications. △ Less

Submitted 6 December, 2023; v1 submitted 6 March, 2023; originally announced March 2023.

Comments: 5 pages + 5 pages Appendix; 4 figures + 8 figures in Appendix; presented at APS March Meeting 2023 Session N72.002

Journal ref: Phys. Rev. Applied 20, 054056 (2023)

A compact and versatile cryogenic probe station for quantum device testing

Authors: Mathieu de Kruijf, Simon Geyer, Toni Berger, Matthias Mergenthaler, Floris Braakman, Richard J. Warburton, Andreas V. Kuhlmann

Abstract: Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from roo… ▽ More Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2$\,$K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Authors: Simon Geyer, Bence Hetényi, Stefano Bosco, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Daniel Loss, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor… ▽ More Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By develo** a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Identifying Pauli spin blockade using deep learning

Authors: Jonas Schuff, Dominic T. Lennon, Simon Geyer, David L. Craig, Federico Fedele, Florian Vigneau, Leon C. Camenzind, Andreas V. Kuhlmann, G. Andrew D. Briggs, Dominik M. Zumbühl, Dino Sejdinovic, Natalia Ares

Abstract: Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-devic… ▽ More Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices. △ Less

Submitted 1 August, 2023; v1 submitted 1 February, 2022; originally announced February 2022.

Journal ref: Quantum 7, 1077 (2023)

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

Authors: B. Severin, D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M. J. Carballido, S. Svab, A. V. Kuhlmann, F. R. Braakman, S. Geyer, F. N. M. Froning, H. Moon, M. A. Osborne, D. Sejdinovic, G. Katsaros, D. M. Zumbühl, G. A. D. Briggs, N. Ares

Abstract: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra… ▽ More The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. △ Less

Submitted 27 July, 2021; originally announced July 2021.

A hole spin qubit in a fin field-effect transistor above 4 kelvin

Authors: Leon C. Camenzind, Simon Geyer, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allow… ▽ More The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development. △ Less

Submitted 6 February, 2023; v1 submitted 12 March, 2021; originally announced March 2021.

Silicon quantum dot devices with a self-aligned second gate layer

Authors: Simon Geyer, Leon C. Camenzind, Lukas Czornomaz, Veeresh Deshpande, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is domina… ▽ More We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Authors: Andreas V. Kuhlmann, Veeresh Deshpande, Leon C. Camenzind, Dominik M. Zumbühl, Andreas Fuhrer

Abstract: We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical… ▽ More We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 122107 (2018)

Narrow optical linewidths and spin pum** on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode

Authors: Matthias C. Löbl, Immo Söllner, Alisa Javadi, Tommaso Pregnolato, Rüdiger Schott, Leonardo Midolo, Andreas V. Kuhlmann, Søren Stobbe, Andreas D. Wieck, Peter Lodahl, Arne Ludwig, Richard J. Warburton

Abstract: We demonstrate full charge control, narrow optical linewidths, and optical spin pum** on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, t… ▽ More We demonstrate full charge control, narrow optical linewidths, and optical spin pum** on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,μ\text{eV}$, just a factor of two above the transform limit. Clear optical spin pum** is observed in a magnetic field of $0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots -- highly coherent single photon generation, ultra-fast optical spin manipulation -- in the thin diodes required in quantum nano-photonics and nano-phononics applications. △ Less

Submitted 8 October, 2020; v1 submitted 1 August, 2017; originally announced August 2017.

Comments: 11 pages, 8 figures

Report number: BG13796

Journal ref: Phys. Rev. B 96, 165440 (2017)

Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide

Authors: Gabija Kiršanskė, Henri Thyrrestrup, Raphaël S. Daveau, Chris L. Dreeßen, Tommaso Pregnolato, Leonardo Midolo, Petru Tighineanu, Alisa Javadi, Søren Stobbe, Rüdiger Schott, Arne Ludwig, Andreas D. Wieck, Suk In Park, ** D. Song, Andreas V. Kuhlmann, Immo Söllner, Matthias C. Löbl, Richard J. Warburton, Peter Lodahl

Abstract: We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a sin… ▽ More We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a single-photon purity larger than 99.4% and a photon indistinguishability of up to 94+-1% by using p-shell excitation combined with spectral filtering to reduce photon jitter. A temperature-dependent study allows pinpointing the residual decoherence processes notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another mean of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The study opens a clear pathway towards the long-standing goal of a fully deterministic source of indistinguishable photons, which is integrated on a planar photonic chip. △ Less

Submitted 3 October, 2017; v1 submitted 27 January, 2017; originally announced January 2017.

Comments: 12 pages (10 figures)

Journal ref: Phys. Rev. B 96, 165306 (2017)

Optical nanoscopy via quantum control

Authors: Timo Kaldewey, Andreas V. Kuhlmann, Sascha R. Valentin, Arne Ludwig, Andreas D. Wieck, Richard J. Warburton

Abstract: We present a scheme for nanoscopic imaging of a quantum mechanical two-level system using an optical probe in the far-field. Existing super-resolution schemes require more than two-levels and depend on an incoherent response to the lasers. Here, quantum control of the two states proceeds via rapid adiabatic passage. We implement this scheme on an array of semiconductor self-assembled quantum dots.… ▽ More We present a scheme for nanoscopic imaging of a quantum mechanical two-level system using an optical probe in the far-field. Existing super-resolution schemes require more than two-levels and depend on an incoherent response to the lasers. Here, quantum control of the two states proceeds via rapid adiabatic passage. We implement this scheme on an array of semiconductor self-assembled quantum dots. Each quantum dot results in a bright spot in the image with extents down to 30 nm (λ/31). Rapid adiabatic passage is established as a versatile tool in the super-resolution toolbox. △ Less

Submitted 6 January, 2017; originally announced January 2017.

Comments: Main manuscript 6 pages and 3 figures, Supplementary Materials 9 pages and 10 figures, submitted to Sciences Advances

Coherent and robust high-fidelity generation of a biexciton in a quantum dot by rapid adiabatic passage

Authors: Timo Kaldewey, Sebastian Lüker, Andreas V. Kuhlmann, Sascha R. Valentin, Arne Ludwig, Andreas D. Wieck, Doris E. Reiter, Tilmann Kuhn, Richard J. Warburton

Abstract: A biexciton in a semiconductor quantum dot is a source of polarization-entangled photons with high potential for implementation in scalable systems. Several approaches for non-resonant, resonant and quasi-resonant biexciton preparation exist, but all have their own disadvantages, for instance low fidelity, timing jitter, incoherence or sensitivity to experimental parameters. We demonstrate a coher… ▽ More A biexciton in a semiconductor quantum dot is a source of polarization-entangled photons with high potential for implementation in scalable systems. Several approaches for non-resonant, resonant and quasi-resonant biexciton preparation exist, but all have their own disadvantages, for instance low fidelity, timing jitter, incoherence or sensitivity to experimental parameters. We demonstrate a coherent and robust technique to generate a biexciton in an InGaAs quantum dot with a fidelity close to one. The main concept is the application of rapid adiabatic passage to the ground state-exciton-biexciton system. We reinforce our experimental results with simulations which include a microscopic coupling to phonons. △ Less

Submitted 16 March, 2017; v1 submitted 5 January, 2017; originally announced January 2017.

Comments: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, accepted as a Rapid Communication in PRB. arXiv admin note: text overlap with arXiv:1701.01304

Journal ref: Phys. Rev. B 95, 161302 (2017)

Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

Authors: Timo Kaldewey, Sebastian Lüker, Andreas V. Kuhlmann, Sascha R. Valentin, Jean-Michel Chauveau, Arne Ludwig, Andreas D. Wieck, Doris E. Reiter, Tilmann Kuhn, Richard J. Warburton

Abstract: Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-short laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effect… ▽ More Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-short laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations. △ Less

Submitted 16 March, 2017; v1 submitted 5 January, 2017; originally announced January 2017.

Comments: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, submitted to PRL

Journal ref: Phys. Rev. B 95, 241306 (2017)

Resonant driving of a single photon emitter embedded in a mechanical oscillator

Authors: Mathieu Munsch, Andreas V. Kuhlmann, Davide Cadeddu, Jean-Michel Gérard, Julien Claudon, Martino Poggio, Richard J. Warburton

Abstract: Coupling a microscopic mechanical resonator to a nano-scale quantum system enables control of the mechanical resonator via the quantum system, and vice versa. The coupling is usually achieved through functionalization of the mechanical resonator but this results in additional mass and dissipation channels. An alternative is an intrinsic coupling based on strain. We employ here a monolithic semicon… ▽ More Coupling a microscopic mechanical resonator to a nano-scale quantum system enables control of the mechanical resonator via the quantum system, and vice versa. The coupling is usually achieved through functionalization of the mechanical resonator but this results in additional mass and dissipation channels. An alternative is an intrinsic coupling based on strain. We employ here a monolithic semiconductor system. The nano-scale quantum system is a quantum dot; the mechanical resonator a microscopic trumpet which simultaneously optimizes the mechanical and photonic properties. The quantum dot transition is driven resonantly. Via the resonance fluorescence, we observe mechanical Brownian motion even at 4K, and demonstrate a coupling to mechanical modes of different types. We identify a mechanical mode with a cooperativity larger than one. We show analytically that the Heisenberg limit on displacement measurement can be reached with an embedded two-level system in the case of a transform-limited optical emitter with perfect photon detection. We argue that operation close to the Heisenberg limit is achievable with state-of-the-art quantum dot devices. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Journal ref: Nat. Commun. 8, 76 (2017)

An artificial Rb atom in a semiconductor with lifetime-limited linewidth

Authors: Jan-Philipp Jahn, Mathieu Munsch, Lucas Béguin, Andreas V. Kuhlmann, Martina Renggli, Yongheng Huo, Fei Ding, Rinaldo Trotta, Marcus Reindl, Oliver G. Schmidt, Armando Rastelli, Philipp Treutlein, Richard J. Warburton

Abstract: We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency-matched to the Rb D2-transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD… ▽ More We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency-matched to the Rb D2-transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.48 GHz) with both resonant and non-resonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible upper state dephasing of the QD transition. We therefore establish a close-to-ideal solid-state source of single photons at a key wavelength for quantum technologies. △ Less

Submitted 21 March, 2016; v1 submitted 26 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 92, 245439 (2015)

Epitaxial lift-off for solid-state cavity quantum electrodynamics

Authors: Lukas Greuter, Daniel Najer, Andreas V. Kuhlmann, Sascha Valentin, Arne Ludwig, Andreas D. Wieck, Sebastian Starosielec, Richard J. Warburton

Abstract: We present a new approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby a 3$λ$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the sem… ▽ More We present a new approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby a 3$λ$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime. △ Less

Submitted 4 May, 2015; originally announced May 2015.

Comments: 6 pages, 4 figures

Towards high cooperativity strong coupling of a quantum dot in a tunable microcavity

Authors: Lukas Greuter, Sebastian Starosielec, Andreas V. Kuhlmann, Richard J. Warburton

Abstract: We investigate the strong coupling regime of a self-assembled quantum dot in a tunable microcavity with dark-field laser spectroscopy. The high quality of the spectra allows the lineshapes to be analyzed revealing subtle quantum interferences. Agreement with a model calculation is achieved only by including exciton dephasing which reduces the cooperativity from a bare value of 9.0 to the time-aver… ▽ More We investigate the strong coupling regime of a self-assembled quantum dot in a tunable microcavity with dark-field laser spectroscopy. The high quality of the spectra allows the lineshapes to be analyzed revealing subtle quantum interferences. Agreement with a model calculation is achieved only by including exciton dephasing which reduces the cooperativity from a bare value of 9.0 to the time-averaged value 5.5. In the pursuit of high cooperativity, besides a high-Q and low mode-volume cavity, we demonstrate that equal efforts need to be taken towards lifetime-limited emitter linewidths. △ Less

Submitted 24 April, 2015; v1 submitted 23 April, 2015; originally announced April 2015.

Journal ref: Phys. Rev. B 92, 045302, 2015

Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations

Authors: Jonathan H. Prechtel, Franziska Maier, Julien Houel, Andreas V. Kuhlmann, Arne Ludwig, Andreas D. Wieck, Daniel Loss, Richard J. Warburton

Abstract: We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range, 100 kV/cm. Both electron and hole g-factors are determined by high resolution laser spectroscopy wit… ▽ More We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range, 100 kV/cm. Both electron and hole g-factors are determined by high resolution laser spectroscopy with resonance fluorescence detection. This, along with the low electrical-noise environment, gives very high quality experimental results. The hole g-factor g_xh depends linearly on the electric field Fz, dg_xh/dFz = (8.3 +/- 1.2)* 10^-4 cm/kV, whereas the electron g-factor g_xe is independent of electric field, dg_xe/dFz = (0.1 +/- 0.3)* 10^-4 cm/kV (results averaged over a number of quantum dots). The dependence of g_xh on Fz is well reproduced by a 4x4 k.p model demonstrating that the electric field sensitivity arises from a combination of soft hole confining potential, an In concentration gradient and a strong dependence of material parameters on In concentration. The electric field sensitivity of the hole spin can be exploited for electrically-driven hole spin rotations via the g-tensor modulation technique and based on these results, a hole spin coupling as large as ~ 1 GHz is expected to be envisaged. △ Less

Submitted 13 December, 2014; originally announced December 2014.

Comments: 8 pages, 4 figures

Manipulation of the nuclear spin ensemble in a quantum dot with chirped magnetic resonance pulses

Authors: Mathieu Munsch, Gunter Wüst, Andreas V. Kuhlmann, Fei Xue, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, Martino Poggio, Richard J. Warburton

Abstract: The nuclear spins in nanostructured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resource while suppressing the noise. NMR techniques are challenging: the group III and V isotopes… ▽ More The nuclear spins in nanostructured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resource while suppressing the noise. NMR techniques are challenging: the group III and V isotopes have large spins with widely different gyromagnetic ratios; in strained material there are large atom-dependent quadrupole shifts; and nanoscale NMR is hard to detect. We report NMR on 100,000 nuclear spins of a quantum dot using chirped radiofrequency pulses. Following polarization, we demonstrate a reversal of the nuclear spin. We can flip the nuclear spin back and forth a hundred times.We demonstrate that chirped NMR is a powerful way of determining the chemical composition, the initial nuclear spin temperatures and quadrupole frequency distributions for all the main isotopes. The key observation is a plateau in the NMR signal as a function of sweep rate: we achieve inversion at the first quantum transition for all isotopes simultaneously. These experiments represent a generic technique for manipulating nanoscale inhomogeneous nuclear spin ensembles and open the way to probe the coherence of such mesoscopic systems. △ Less

Submitted 17 June, 2015; v1 submitted 18 November, 2013; originally announced November 2013.

Comments: 8 pages, 4 figures

Journal ref: Nat. Nanotechnol. 9, 671 (2014)

Transform-limited single photons from a single quantum dot

Authors: Andreas V. Kuhlmann, Jonathan H. Prechtel, Julien Houel, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, Richard J. Warburton

Abstract: A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a factor of two larger than the transform-limit. A major contributor to the inhomogeneous linewdith is the nuclear spin noise. We show here that the nuclear spin n… ▽ More A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a factor of two larger than the transform-limit. A major contributor to the inhomogeneous linewdith is the nuclear spin noise. We show here that the nuclear spin noise depends on optical excitation, increasing (decreasing) with increasing resonant laser power for the neutral (charged) exciton. Based on this observation, we discover regimes where we demonstrate transform-limited linewidths on both neutral and charged excitons even when the measurement is performed very slowly. △ Less

Submitted 7 October, 2014; v1 submitted 26 July, 2013; originally announced July 2013.

Journal ref: Nat. Commun. 6, 8204 (2015)

A frequency-stabilized source of single photons from a solid-state qubit

Authors: Jonathan H. Prechtel, Andreas V. Kuhlmann, Julien Houel, Lukas Greuter, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, Richard J. Warburton

Abstract: Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem he… ▽ More Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem here with a dynamic feedback technique that locks the quantum dot emission frequency to a reference. The incoherent scattering (resonance fluorescence) represents the single photon output whereas the coherent scattering (Rayleigh scattering) is used for the feedback control. The fluctuations in emission frequency are reduced to 20 MHz, just ~ 5% of the quantum dot optical linewidth, even over several hours. By eliminating the 1/f-like noise, the relative fluctuations in resonance fluorescence intensity are reduced to ~ 10E-5 at low frequency. Under these conditions, the antibunching dip in the resonance fluorescence is described extremely well by the two-level atom result. The technique represents a way of removing charge noise from a quantum device. △ Less

Submitted 3 July, 2013; originally announced July 2013.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. X 3, 041006 (2013)

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

Authors: Andreas V. Kuhlmann, Julien Houel, Daniel Brunner, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, Richard J. Warburton

Abstract: Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarizati… ▽ More Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10^7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range 920-980 nm and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical design of the microscope is presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance. △ Less

Submitted 8 March, 2013; originally announced March 2013.

Journal ref: Rev. Sci. Instrum. 84, 073905 (2013)

Charge noise and spin noise in a semiconductor quantum device

Authors: Andreas V. Kuhlmann, Julien Houel, Arne Ludwig, Lukas Greuter, Dirk Reuter, Andreas D. Wieck, Martino Poggio, Richard J. Warburton

Abstract: Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with noise. The sources of noise are inherent to the semiconductor and are complex. Charge noise results in a fluctuating electric field, spin noise in a fluctuating magn… ▽ More Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with noise. The sources of noise are inherent to the semiconductor and are complex. Charge noise results in a fluctuating electric field, spin noise in a fluctuating magnetic field at the location of the qubit, and both can lead to dephasing and decoherence of optical and spin states. We investigate noise in an ultra-pure semiconductor using a minimally-invasive, ultra-sensitive, local probe: resonance fluorescence from a single quantum dot. We distinguish between charge noise and spin noise via a crucial difference in their optical signatures. Noise spectra for both electric and magnetic fields are derived. The noise spectrum of the charge noise can be fully described by the fluctuations in an ensemble of localized charge defects in the semiconductor. We demonstrate the "semiconductor vacuum" for the optical transition at frequencies above 50 kHz: by operating the device at high enough frequencies, we demonstrate transform-limited quantum dot optical linewidths. △ Less

Submitted 27 January, 2013; originally announced January 2013.

Journal ref: Nature Phys. 9, 570 (2013)