Showing 1–22 of 22 results for author: Kugathasan, T

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Authors: T. Moretti, M. Milanesio, R. Cardella, T. Kugathasan, A. Picardi, I. Semendyaev, M. Elviretti, H. Rücker, K. Nakamura, Y. Takubo, M. Togawa, F. Cadoux, R. Cardarelli, L. Cecconi, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias , et al. (5 additional authors not shown)

Abstract: Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a… ▽ More Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively. △ Less

Submitted 21 June, 2024; v1 submitted 19 April, 2024; originally announced April 2024.

First Measurement of the $ν_e$ and $ν_μ$ Interaction Cross Sections at the LHC with FASER's Emulsion Detector

Authors: FASER Collaboration, Roshan Mammen Abraham, John Anders, Claire Antel, Akitaka Ariga, Tomoko Ariga, Jeremy Atkinson, Florian U. Bernlochner, Tobias Boeckh, Jamie Boyd, Lydia Brenner, Angela Burger, Franck Cadoux, Roberto Cardella, David W. Casper, Charlotte Cavanagh, Xin Chen, Andrea Coccaro, Stephane Debieux, Monica D'Onofrio, Ansh Desai, Sergey Dmitrievsky, Sinead Eley, Yannick Favre, Deion Fellers , et al. (80 additional authors not shown)

Abstract: This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated lumin… ▽ More This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated luminosity of 9.5 fb$^{-1}$. Applying stringent selections requiring electrons with reconstructed energy above 200~GeV, four electron neutrino interaction candidate events are observed with an expected background of $0.025^{+0.015}_{-0.010}$, leading to a statistical significance of 5.2$σ$. This is the first direct observation of electron neutrino interactions at a particle collider. Eight muon neutrino interaction candidate events are also detected, with an expected background of $0.22^{+0.09}_{-0.07}$, leading to a statistical significance of 5.7$σ$. The signal events include neutrinos with energies in the TeV range, the highest-energy electron and muon neutrinos ever detected from an artificial source. The energy-independent part of the interaction cross section per nucleon is measured over an energy range of 560--1740 GeV (520--1760 GeV) for $ν_e$ ($ν_μ$) to be $(1.2_{-0.7}^{+0.8}) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$ ($(0.5\pm0.2) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$), consistent with Standard Model predictions. These are the first measurements of neutrino interaction cross sections in those energy ranges. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Neutrino Rate Predictions for FASER

Authors: FASER Collaboration, Roshan Mammen Abraham, John Anders, Claire Antel, Akitaka Ariga, Tomoko Ariga, Jeremy Atkinson, Florian U. Bernlochner, Tobias Boeckh, Jamie Boyd, Lydia Brenner, Angela Burger, Franck Cadoux, Roberto Cardella, David W. Casper, Charlotte Cavanagh, Xin Chen, Andrea Coccaro, Stephane Débieux, Monica D'Onofrio, Ansh Desai, Sergey Dmitrievsky, Sinead Eley, Yannick Favre, Deion Fellers , et al. (75 additional authors not shown)

Abstract: The Forward Search Experiment (FASER) at CERN's Large Hadron Collider (LHC) has recently directly detected the first collider neutrinos. Neutrinos play an important role in all FASER analyses, either as signal or background, and it is therefore essential to understand the neutrino event rates. In this study, we update previous simulations and present prescriptions for theoretical predictions of ne… ▽ More The Forward Search Experiment (FASER) at CERN's Large Hadron Collider (LHC) has recently directly detected the first collider neutrinos. Neutrinos play an important role in all FASER analyses, either as signal or background, and it is therefore essential to understand the neutrino event rates. In this study, we update previous simulations and present prescriptions for theoretical predictions of neutrino fluxes and cross sections, together with their associated uncertainties. With these results, we discuss the potential for possible measurements that could be carried out in the coming years with the FASER neutrino data to be collected in LHC Run 3 and Run 4. △ Less

Submitted 13 June, 2024; v1 submitted 20 February, 2024; originally announced February 2024.

Comments: 19 pages, 10 figures

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

Authors: M. Milanesio, L. Paolozzi, T. Moretti, A. Latshaw, L. Bonacina, R. Cardella, T. Kugathasan, A. Picardi, M. Elviretti, H. Rücker, R. Cardarelli, L. Cecconi, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias, I. Semendyaev, J. Saidi, M. Vicente Barreto Pinto, S. Zambito , et al. (1 additional authors not shown)

Abstract: The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully deplete… ▽ More The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection. △ Less

Submitted 11 February, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: Submitted to JINST

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

Authors: M. Milanesio, L. Paolozzi, T. Moretti, R. Cardella, T. Kugathasan, F. Martinelli, A. Picardi, I. Semendyaev, S. Zambito, K. Nakamura, Y. Tabuko, M. Togawa, M. Elviretti, H. Rücker, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi , et al. (5 additional authors not shown)

Abstract: A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted se… ▽ More A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: Submitted to JINST

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Authors: Viros Sriskaran, Jerome Alozy, Rafael Ballabriga, Michael Campbell, Pinelopi Christodoulou, Erik Heijne, Adil Koukab, Thanushan Kugathasan, Xavier Llopart, Markus Piller, Adithya Pulli, Jean-Michel Sallese, Lukas Tlustos

Abstract: The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing large-area detectors with minimal dead area. The chip is designed to read out a sensor of 320 x 320 pixels with dimensions of 75 μm x 75 μm or 160 x 160 pixels with… ▽ More The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing large-area detectors with minimal dead area. The chip is designed to read out a sensor of 320 x 320 pixels with dimensions of 75 μm x 75 μm or 160 x 160 pixels with dimensions of 150 μm x 150 μm. The readout architecture features energy binning of the single photons, which includes charge sharing correction for hits with energy spread over adjacent pixels. This paper presents the specifications, architecture, and circuit implementation of the chip, along with the first electrical measurements. △ Less

Submitted 21 November, 2023; v1 submitted 16 October, 2023; originally announced October 2023.

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Authors: Justus Braach, Eric Buschmann, Dominik Dannheim, Katharina Dort, Thanushan Kugathasan, Magdalena Munker, Walter Snoeys, Peter Švihra, Mateus Vicente

Abstract: Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches rangin… ▽ More Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches ranging from 8.66 to 20 micrometers. Four pixels are transmitting an analog output signal and 64 are transmitting binary hit information. Various design variations are explored, aiming at accelerating the charge collection and making the timing of the charge collection more uniform over the pixel area. Signal treatment of the analog waveforms, as well as reconstruction of digital position, time and charge information, is carried out off-chip. This contribution introduces the design of the sensor and readout system and presents performance results for various pixel designs achieved in recent test beam measurements with external tracking and timing reference detectors. A time resolution below 150 ps is obtained at full efficiency for all pixel pitches. △ Less

Submitted 25 September, 2023; v1 submitted 9 June, 2023; originally announced June 2023.

Comments: 15 pages, 15 figures, content as published in NIM A as part of a special issue for the ULITIMA 2023 conference

Journal ref: Nuclear Instruments and Methods in Physics Research Section A, Volume 1056, 2023

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

Authors: S. Zambito, M. Milanesio, T. Moretti, L. Paolozzi, M. Munker, R. Cardella, T. Kugathasan, F. Martinelli, A. Picardi, M. Elviretti, H. Rücker, A. Trusch, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias , et al. (3 additional authors not shown)

Abstract: A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel… ▽ More A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Comments: 11 pages, 11 figures

MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Authors: H. Pernegger, P. Allport, D. V. Berlea, A. Birman, D. Bortoletto, C. Buttar, E. Charbon, F. Dachs, V. Dao, H. Denizli, D. Dobrijevic, M. Dyndal, A. Fenigstein, L. Flores Sanz de Acedo, P. Freeman, A. Gabrielli, M. Gazi, L. Gonella, V. Gonzalez, G. Gustavino, A. Haim, T. Kugathasan, M. LeBlanc, M. Munker, K. Y. Oyulmaz , et al. (14 additional authors not shown)

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granulari… ▽ More Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$μ$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging. The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $σ=2$~ns. △ Less

Submitted 13 September, 2023; v1 submitted 10 January, 2023; originally announced January 2023.

Journal ref: JINST 18 P09018 (2023)

First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors

Authors: ALICE ITS project, :, G. Aglieri Rinella, M. Agnello, B. Alessandro, F. Agnese, R. S. Akram, J. Alme, E. Anderssen, D. Andreou, F. Antinori, N. Apadula, P. Atkinson, R. Baccomi, A. Badalà, A. Balbino, C. Bartels, R. Barthel, F. Baruffaldi, I. Belikov, S. Beole, P. Becht, A. Bhatti, M. Bhopal, N. Bianchi , et al. (230 additional authors not shown)

Abstract: A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to ra… ▽ More A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to radii of about 2cm without any signs of mechanical or electrical damage. During a subsequent characterisation using a 5.4GeV electron beam, it was further confirmed that they preserve their full electrical functionality as well as particle detection performance. In this article, the bending procedure and the setup used for characterisation are detailed. Furthermore, the analysis of the beam test, including the measurement of the detection efficiency as a function of beam position and local inclination angle, is discussed. The results show that the sensors maintain their excellent performance after bending to radii of 2cm, with detection efficiencies above 99.9% at typical operating conditions, paving the way towards a new class of detectors with unprecedented low material budget and ideal geometrical properties. △ Less

Submitted 17 August, 2021; v1 submitted 27 May, 2021; originally announced May 2021.

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip

Authors: G. Aglieri Rinella, G. Chaosong, A. di Mauro, J. Eum, H. Hillemanns, A. Junique, M. Keil, D. Kim, H. Kim, T. Kugathasan, S. Lee, M. Mager, V. Manzari, C. A. Marin Tobon, P. Martinengo, H. Mugnier, L. Musa, F. Reidt, J. Rousset, K. Sielewicz, W. Snoeys, M. Šuljić, J. W. van Hoorne, Q. M. Waheed, P. Yang , et al. (1 additional authors not shown)

Abstract: This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation… ▽ More This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge collection electrode size and the spacing of the electrode to surrounding in-pixel electronics. The results from pixels of 28 um pitch confirm that even in partially depleted circuits, charge collection can be fast (<10 ns), and quantify the influence of the parameters onto the signal sharing and amplitudes, highlighting the importance of a correct spacing between wells and of the impact of the reverse substrate bias. △ Less

Submitted 23 September, 2020; v1 submitted 22 September, 2020; originally announced September 2020.

DMAPS Monopix developments in large and small electrode designs

Authors: Christian Bespin, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Leyre Flores Sanz de Acedo, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Cesar Augusto Marin Tobon, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, Francesco Piro, Petra Riedler , et al. (8 additional authors not shown)

Abstract: LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows… ▽ More LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams. △ Less

Submitted 9 July, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Comments: 7 pages, 8 figures. Proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Authors: M. Dyndal, V. Dao, P. Allport, I. Asensi Tortajada, M. Barbero, S. Bhat, D. Bortoletto, I. Berdalovic, C. Bespin, C. Buttar, I. Caicedo, R. Cardella, F. Dachs, Y. Degerli, H. Denizli, L. Flores Sanz de Acedo, P. Freeman, L. Gonella, A. Habib, T. Hemperek, T. Hirono, B. Hiti, T. Kugathasan, I. Mandić, D. Maneuski , et al. (19 additional authors not shown)

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico… ▽ More Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. △ Less

Submitted 14 December, 2019; v1 submitted 26 September, 2019; originally announced September 2019.

Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source

Authors: Maria Mironova, Kaloyan Metodiev, Phil Allport, Ivan Berdalovic, Daniela Bortoletto, Craig Buttar, Roberto Cardella, Valerio Dao, Mateusz Dyndal, Patrick Freeman, Leyre Flores Sanz de Acedo, Laura Gonella, Thanushan Kugathasan, Heinz Pernegger, Francesco Piro, Richard Plackett, Petra Riedler, Abhishek Sharma, Enrico Junior Schioppa, Ian Shipsey, Carlos Solans Sanchez, Walter Snoeys, Hakan Wennloef, Daniel Weatherill, Daniel Wood , et al. (1 additional authors not shown)

Abstract: This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were co… ▽ More This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. △ Less

Submitted 2 October, 2019; v1 submitted 18 September, 2019; originally announced September 2019.

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

Authors: Magdalena Munker, Mathieu Benoit, Dominik Dannheim, Amos Fenigstein, Thanushan Kugathasan, Tomer Leitner, Heinz Pernegger, Petra Riedler, Walter Snoeys

Abstract: CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel cor… ▽ More CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer. △ Less

Submitted 7 May, 2019; v1 submitted 25 March, 2019; originally announced March 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Authors: Ivan Caicedo, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Christian Bespin, Patrick Breugnon, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, David-Leon Pohl, Petra Riedler, Alexandre Rozanov, Piotr Rymaszewski , et al. (5 additional authors not shown)

Abstract: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>… ▽ More Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed. △ Less

Submitted 25 April, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade

Authors: K. Moustakas, M. Barbero, I. Berdalovic, C. Bespin, P. Breugnon, I. Caicedo, R. Cardella, Y. Degerli, N. Egidos Plaja, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krueger, T. Kugathasan, C. A. Marin Tobon, P. Pangaud, H. Pernegger, E. J. Schioppa, W. Snoeys, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o… ▽ More Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Authors: T. Wang, M. Barbero, I. Berdalovic, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, R. Cardella, Z. Chen, Y. Degerli, N. Egidos, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krüger, T. Kugathasan, F. Hügging, C. A. Marin Tobon, K. Moustakas, P. Pangaud, P. Schwemling, H. Pernegger, D-L. Pohl, A. Rozanov , et al. (3 additional authors not shown)

Abstract: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo… ▽ More Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. △ Less

Submitted 29 September, 2017; originally announced October 2017.

Comments: International Workshop on Radiation Imaging Detectors 2017

Technical Design Report for the: PANDA Micro Vertex Detector

Authors: PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, Q. Wang, H. Xu, M. Albrecht, J. Becker, K. Eickel, F. Feldbauer, M. Fink, P. Friedel, F. H. Heinsius, T. Held, H. Koch, B. Kopf, M. Leyhe, C. Motzko, M. Pelizäus, J. Pychy , et al. (436 additional authors not shown)

Abstract: This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics… ▽ More This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is outlined. △ Less

Submitted 10 August, 2012; v1 submitted 27 July, 2012; originally announced July 2012.

Comments: 189 pages, 225 figures, 41 tables

Technical Design Report for the PANDA Solenoid and Dipole Spectrometer Magnets

Authors: The PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, O. Wang, H. Xu, J. Becker, F. Feldbauer, F. -H. Heinsius, T. Held, H. Koch, B. Kopf, M. Pelizaeus, T. Schroeder, M. Steinke, U. Wiedner, J. Zhong, A. Bianconi, M. Bragadireanu, D. Pantea , et al. (387 additional authors not shown)

Abstract: This document is the Technical Design Report covering the two large spectrometer magnets of the PANDA detector set-up. It shows the conceptual design of the magnets and their anticipated performance. It precedes the tender and procurement of the magnets and, hence, is subject to possible modifications arising during this process. This document is the Technical Design Report covering the two large spectrometer magnets of the PANDA detector set-up. It shows the conceptual design of the magnets and their anticipated performance. It precedes the tender and procurement of the magnets and, hence, is subject to possible modifications arising during this process. △ Less

Submitted 1 July, 2009; originally announced July 2009.

Comments: 10 pages, 14MB, accepted by FAIR STI in May 2009, editors: Inti Lehmann (chair), Andrea Bersani, Yuri Lobanov, Jost Luehning, Jerzy Smyrski, Technical Coordiantor: Lars Schmitt, Bernd Lewandowski (deputy), Spokespersons: Ulrich Wiedner, Paola Gianotti (deputy)

Physics Performance Report for PANDA: Strong Interaction Studies with Antiprotons

Authors: PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, O. Wang, H. Xu, J. Becker, F. Feldbauer, F. -H. Heinsius, T. Held, H. Koch, B. Kopf, M. Pelizaeus, T. Schroeder, M. Steinke, U. Wiedner, J. Zhong, A. Bianconi, M. Bragadireanu, D. Pantea , et al. (391 additional authors not shown)

Abstract: To study fundamental questions of hadron and nuclear physics in interactions of antiprotons with nucleons and nuclei, the universal PANDA detector will be built. Gluonic excitations, the physics of strange and charm quarks and nucleon structure studies will be performed with unprecedented accuracy thereby allowing high-precision tests of the strong interaction. The proposed PANDA detector is a s… ▽ More To study fundamental questions of hadron and nuclear physics in interactions of antiprotons with nucleons and nuclei, the universal PANDA detector will be built. Gluonic excitations, the physics of strange and charm quarks and nucleon structure studies will be performed with unprecedented accuracy thereby allowing high-precision tests of the strong interaction. The proposed PANDA detector is a state-of-the art internal target detector at the HESR at FAIR allowing the detection and identification of neutral and charged particles generated within the relevant angular and energy range. This report presents a summary of the physics accessible at PANDA and what performance can be expected. △ Less

Submitted 23 March, 2009; originally announced March 2009.

Comments: 216 pages

Technical Design Report for PANDA Electromagnetic Calorimeter (EMC)

Authors: PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, O. Wang, H. Xu, J. Becker, F. Feldbauer, F. -H. Heinsius, T. Held, H. Koch, B. Kopf, M. Pelizaeus, T. Schroeder, M. Steinke, U. Wiedner, J. Zhong, A. Bianconi, M. Bragadireanu, D. Pantea , et al. (387 additional authors not shown)

Abstract: This document presents the technical layout and the envisaged performance of the Electromagnetic Calorimeter (EMC) for the PANDA target spectrometer. The EMC has been designed to meet the physics goals of the PANDA experiment, which is being developed for the Facility for Antiproton and Ion Research (FAIR) at Darmstadt, Germany. The performance figures are based on extensive prototype tests and… ▽ More This document presents the technical layout and the envisaged performance of the Electromagnetic Calorimeter (EMC) for the PANDA target spectrometer. The EMC has been designed to meet the physics goals of the PANDA experiment, which is being developed for the Facility for Antiproton and Ion Research (FAIR) at Darmstadt, Germany. The performance figures are based on extensive prototype tests and radiation hardness studies. The document shows that the EMC is ready for construction up to the front-end electronics interface. △ Less

Submitted 7 October, 2008; originally announced October 2008.

Comments: 199 pages, submitted to FAIR STI on July 1st 2008, Editors: Fritz-Herbert Heinsius, Bertram Kopf, Bernd Lewandowski (Deputy Technical Coordinator), Herbert Löhner, Rainer Novotny (Project Coordinator), Klaus Peters, Philippe Rosier, Lars Schmitt (Technical Coordinator), Alexander Vasiliev; Spokespersons: Ulrich Wiedner, Paola Gianotti (deputy)