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Twisted MoSe2 Homobilayer Behaving as a Heterobilayer
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Natalia Zawadzka,
Mateusz Raczyński,
Weiguang Yang,
Mehdi Arfaoui,
Gayatri,
Julia Kucharek,
Jerzy T. Sadowski,
Hyeon Suk Shin,
Adam Babiński,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Maciej R Molas
Abstract:
Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw…
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Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.
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Submitted 7 June, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride
Authors:
Adam Krzysztof Szczerba,
Julia Kucharek,
Jan Pawłowski,
Takashi Taniguchi,
Kenji Watanabe,
Wojciech Pacuski
Abstract:
We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of qu…
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We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of quantum wells on two dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates, in particular it requires 70-100$^\circ$C lower temperatures.
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Submitted 8 November, 2023;
originally announced November 2023.
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Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se$_2$ on 2D, 3D and polycrystalline substrates
Authors:
Julia Kucharek,
Rafał Bożek,
Wojciech Pacuski
Abstract:
Magnetic do** of 2D materials such as Transition Metal Dichalcogenides is promising for the enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of magnetic ions, they should be incorporated into the crystal lattice of 2D material rather than form separated precipitates. This work shows a study on incorporating ma…
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Magnetic do** of 2D materials such as Transition Metal Dichalcogenides is promising for the enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of magnetic ions, they should be incorporated into the crystal lattice of 2D material rather than form separated precipitates. This work shows a study on incorporating magnetic manganese ions into the MoSe$_2$ monolayers using molecular beam epitaxy. We test growth on various substrates with very different properties: polycrystalline SiO$_2$ on Si, exfoliated 2D hexagonal Boron Nitride flakes (placed on SiO$_2$ / Si), monocrystalline sapphire, and exfoliated graphite (on tantalum foil). Although atomic force microscopy images indicate the presence of MnSe precipitates, but at the same time, various techniques reveal effects related to alloying MoSe$_2$ with Mn: Raman scattering and photoluminescence measurements show energy shift related to the presence of Mn, scanning transmission microscopy shows Mn induced partial transformation of 1H to 1T^\prime phase. Above effects evidence partial incorporation of Mn into the MoSe$_2$ layer.
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Submitted 14 September, 2023; v1 submitted 29 March, 2023;
originally announced April 2023.
