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Characterisation of three-body loss in ${}^{166}$Er and optimised production of large Bose-Einstein condensates
Authors:
Milan Krstajić,
Péter Juhász,
Jiří Kučera,
Lucas R. Hofer,
Gavin Lamb,
Anna L. Marchant,
Robert P. Smith
Abstract:
Ultracold gases of highly magnetic lanthanide atoms have enabled the realisation of dipolar quantum droplets and supersolids. However, future studies could be limited by the achievable atom numbers and hindered by high three-body loss rates. Here we study density-dependent atom loss in an ultracold gas of ${}^{166}$Er for magnetic fields below $4\ \textrm{G}$, identifying six previously unknown fe…
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Ultracold gases of highly magnetic lanthanide atoms have enabled the realisation of dipolar quantum droplets and supersolids. However, future studies could be limited by the achievable atom numbers and hindered by high three-body loss rates. Here we study density-dependent atom loss in an ultracold gas of ${}^{166}$Er for magnetic fields below $4\ \textrm{G}$, identifying six previously unknown features which display both a strong temperature dependence and also sensitivity to the polarisation and intensity of the light used to optically trap the atoms. This detailed knowledge of the loss landscape allows us to optimise the production of dipolar BECs with more than $2 \times 10^5$ atoms and points towards optimal strategies for the study of large-atom-number dipolar gases in the droplet and supersolid regimes.
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Submitted 3 July, 2023;
originally announced July 2023.
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Fluke 8588A and Keysight 3458A DMM Sampling Performance
Authors:
Rado Lapuh,
Jan Kucera,
Jakub Kovac,
Bostjan Voljc
Abstract:
This paper reports on an evaluation of the Fluke 8588A digital multimeter (DMM) sampling performance and comparison to Keysight 3458A DMM sampling performance. The design of 8588A type DMM shows both similarities and striking differences in design compared to 3458A type DMM. Apart from their specified sampling capabilities, measurements were performed to evaluate frequency response, noise performa…
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This paper reports on an evaluation of the Fluke 8588A digital multimeter (DMM) sampling performance and comparison to Keysight 3458A DMM sampling performance. The design of 8588A type DMM shows both similarities and striking differences in design compared to 3458A type DMM. Apart from their specified sampling capabilities, measurements were performed to evaluate frequency response, noise performance, including a 1 / f type noise and a timing jitter induced noise, as well as phase measurement performance. The given comprehensive report is crucial for careful application of DMMs in metrology tasks with optimal utilization of their performance.
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Submitted 23 May, 2022;
originally announced May 2022.
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FliI6-FliJ molecular motor assists with unfolding in the type III secretion export apparatus
Authors:
Jiri Kucera,
Eugene M. Terentjev
Abstract:
The role of rotational molecular motors of the ATP synthase class is integral to the metabolism of cells. Yet the function of FliI6-FliJ complex - homologous to the F1 ATPase motor - within the flagellar export apparatus remains unclear. We use a simple two-state model adapted from studies of linear molecular motors to identify key features of this motor. The two states are the 'locked' ground sta…
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The role of rotational molecular motors of the ATP synthase class is integral to the metabolism of cells. Yet the function of FliI6-FliJ complex - homologous to the F1 ATPase motor - within the flagellar export apparatus remains unclear. We use a simple two-state model adapted from studies of linear molecular motors to identify key features of this motor. The two states are the 'locked' ground state where the FliJ coiled coil filament experiences fluctuations in an asymmetric torsional potential, and a 'free' excited state in which FliJ undergoes rotational diffusion. Michaelis-Menten kinetics was used to treat transitions between these two states, and obtain the average angular velocity of the FliJ filament within the FliI6 stator: ~9.0 rps. The motor was then studied under external counter torque conditions in order to ascertain its maximal power output: Pmax ~42 kBT/s, and the stall torque: ~3 kBT/rad. Two modes of action within the flagellar export apparatus are proposed, in which the motor performs useful work either by continuously 'grinding' through the resistive environment, or by exerting equal and opposite stall force on it. In both cases, the resistance is provided by flagellin subunits entering the flagellar export channel prior to their unfolding. We therefore propose that the function of the FliI6-FliJ complex is to lower the energy barrier and therefore assist in unfolding of the flagellar proteins before feeding them into the transport channel.
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Submitted 19 December, 2019;
originally announced December 2019.
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Seek and Push: Detecting Large Traffic Aggregates in the Dataplane
Authors:
Jan Kučera,
Diana Andreea Popescu,
Gianni Antichi,
Jan Kořenek,
Andrew W. Moore
Abstract:
High level goals such as bandwidth provisioning, accounting and network anomaly detection can be easily met if high-volume traffic clusters are detected in real time. This paper presents Elastic Trie, an alternative to approaches leveraging controller-dataplane architectures.
Our solution is a novel push-based network monitoring approach that allows detection, within the dataplane, of high-volum…
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High level goals such as bandwidth provisioning, accounting and network anomaly detection can be easily met if high-volume traffic clusters are detected in real time. This paper presents Elastic Trie, an alternative to approaches leveraging controller-dataplane architectures.
Our solution is a novel push-based network monitoring approach that allows detection, within the dataplane, of high-volume traffic clusters. Notifications from the switch to the controller can be sent only as required, avoiding the transmission or processing of unnecessary data. Furthermore, the dataplane can iteratively refine the responsible IP prefixes allowing a controller to receive a flexible granularity information. We report and discuss an evaluation of our P4-based prototype, showing our solution to be able to detect (with 95% of precision), hierarchical heavy hitters and superspreaders using less than 8KB or 80KB of active memory respectively. Finally, Elastic Trie can identify changes in the network traffic patterns, symptomatic of Denial-of-Service attack events.
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Submitted 15 May, 2018;
originally announced May 2018.
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Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy
Authors:
J. Zemen,
J. Mašek,
J. Kučera,
J. A. Mol,
P. Motloch,
T. Jungwirth
Abstract:
An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for single-element transition metals is adapted for the ordered binary alloy. Spin magnetic moment and density of states are calculated using a full-potential linearized…
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An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for single-element transition metals is adapted for the ordered binary alloy. Spin magnetic moment and density of states are calculated using a full-potential linearized augmented plane-wave (LAPW) ab initio method and our TB code with different variants of the interatomic parameters. Detailed mutual comparison of this data allows for determination of a subset of the compound TB parameters tuning of which improves the agreement of the TB and LAPW results. MAE calculated as a function of band filling using the refined parameters is in broad agreement with ab initio data for all valence states and in quantitative agreement with ab initio and experimental data for the natural band filling. Our work provides a practical basis for further studies of relativistic magnetotransport anisotropies by means of local Green's function formalism which is directly compatible with our TB approach.
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Submitted 22 January, 2013;
originally announced January 2013.
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Strain control of magnetic anisotropy in (Ga,Mn)As microbars
Authors:
C. King,
J. Zemen,
K. Olejník,
L. Horák,
J. Haigh,
V. Novák,
J. Kučera,
V. Holý,
R. P. Campion,
B. L. Gallagher,
T. Jungwirth
Abstract:
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement wi…
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We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modeling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin.
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Submitted 16 July, 2010;
originally announced July 2010.
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Pre-edge XANES structure of Mn in (Ga,Mn)As
Authors:
N. A. Goncharuk,
J. Kucera,
L. Smrcka
Abstract:
The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp…
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The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp distinction between the spectra simulated for the substitutional and interstitial Mn defects which is determined mainly by the second nearest neighbor ligands. A single feature is obtained for the substitutional Mn impurity, whereas two peaks appear for both types of interstitial defects. An interpretation of the pre-edge features was proposed.
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Submitted 23 March, 2010;
originally announced March 2010.
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Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As
Authors:
Karel Výborný,
Jan Kucera,
Jairo Sinova,
A. W. Rushforth,
B. L. Gallagher,
T. Jungwirth
Abstract:
Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical…
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Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.
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Submitted 17 June, 2009;
originally announced June 2009.
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Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
Authors:
J. Zemen,
J. Kucera,
K. Olejnik,
T. Jungwirth
Abstract:
We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a spin representation for their kinetic-exchange interaction with localised electrons on Mn ions, treated in the mean-field approximation. For epilayers with grow…
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We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a spin representation for their kinetic-exchange interaction with localised electrons on Mn ions, treated in the mean-field approximation. For epilayers with growth induced lattice-matching strains we study in-plane to out-of-plane easy-axis reorientations as a function of Mn local-moment concentration, hole concentration, and temperature. Next we focus on the competition of in-plane cubic and uniaxial anisotropies. We add an in-plane shear strain to the effective Hamiltonian in order to capture measured data in bare, unpatterned epilayers, and we provide microscopic justification for this approach. The model is then extended by an in-plane uniaxial strain and used to directly describe experiments with strains controlled by postgrowth lithography or attaching a piezo stressor. The calculated easy-axis directions and anisotropy fields are in semiquantitative agreement with experiment in a wide parameter range.
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Submitted 6 April, 2009;
originally announced April 2009.
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K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As
Authors:
N. A. Goncharuk,
L. Smrcka,
J. Kucera,
K. Olejnik,
V. Novak,
Z. Matej,
L. Nichtova,
V. Holy
Abstract:
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial…
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This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing.
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Submitted 23 March, 2010; v1 submitted 7 May, 2008;
originally announced May 2008.
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Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
Authors:
A. W. Rushforth,
E. De Ranieri,
J. Zemen,
J. Wunderlich,
K. W. Edmonds,
C. S. King,
E. Ahmad,
R. P. Campion,
C. T. Foxon,
B. L. Gallagher,
K. Vyborny,
J. Kucera,
T. Jungwirth
Abstract:
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As pr…
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We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
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Submitted 22 January, 2008; v1 submitted 6 January, 2008;
originally announced January 2008.
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Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices
Authors:
N. A. Goncharuk,
L. Smrcka,
P. Svoboda,
P. Vasek,
J. Kucera,
Yu. Krupko,
W. Wegscheider
Abstract:
The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlatti…
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The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.
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Submitted 31 May, 2007;
originally announced May 2007.
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Theory of ferromagnetic (III,Mn)V semiconductors
Authors:
T. Jungwirth,
Jairo Sinova,
J. Masek,
J. Kucera,
A. H. MacDonald
Abstract:
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status…
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The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and post-growth treatment techniques have played a central role in the field, often pushing the limits of dilute Mn moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. In the review we focus on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magneto-transport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment.
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Submitted 12 April, 2006; v1 submitted 14 March, 2006;
originally announced March 2006.
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Electronic Structure of Three-Dimensional Superlattices Subject to Tilted Magnetic Fields
Authors:
N. A. Goncharuk,
L. Smrcka,
J. Kucera,
K. Vyborny
Abstract:
Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-indepe…
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Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-independent rigid body in k-space and periods of oscillations are related to extremal cross-sections of the Fermi surface cut by planes perpendicular to the magnetic-field direction. We point out cases where the quasi-classical treatment fails and propose a simple tight-binding fully-quantum-mechanical model of the superlattice electronic structure.
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Submitted 25 February, 2005;
originally announced February 2005.
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Cyclotron Resonance Study of the Two-Dimensional Electron Layers and Double-Layers in Tilted Magnetic Fields
Authors:
Nataliya A. Goncharuk,
Ludvik Smrcka,
Jan Kucera
Abstract:
The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-l…
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The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-layer systems can be realized in a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results are compared to experimental data.
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Submitted 22 September, 2003; v1 submitted 12 June, 2003;
originally announced June 2003.
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Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors
Authors:
Jairo Sinova,
T. Jungwirth,
J. Kucera,
A. H. MacDonald
Abstract:
We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency…
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We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall conductivity reduces to the $\vec k$-space Berry's phase value predicted by a recent theory of the anomalous Hall effect that is able to account quantitatively for experiment. We compute theoretical estimates for magnetic circular dichroism, Faraday rotation, and Kerr effect parameters as a function of Mn concentration and free carrier density. The mid-infrared response feature is present in each of these magneto-optical effects.
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Submitted 21 January, 2003;
originally announced January 2003.
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Theoretical models of ferromagnetic III-V semiconductors
Authors:
T. Jungwirth,
Jairo Sinova,
J. Kučera,
A. H. MacDonald
Abstract:
Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these…
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Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compounds that have the highest transition temperatures appear to be well understood, and efficient computation methods have been developed which are able to model their magnetic, transport, and optical properties. However many questions remain.
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Submitted 15 October, 2002;
originally announced October 2002.
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Cyclotron Resonance in Two-Dimensional Electron Single-Layers and Double-Layers in Tilted Magnetic Fields
Authors:
N. Goncharuk,
L. Smrcka,
J. Kucera
Abstract:
The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula was employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. A parabolic quantum well was used to model single-layer systems. Bilayer systems were represented by a…
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The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula was employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. A parabolic quantum well was used to model single-layer systems. Bilayer systems were represented by a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results were compared to experimental data.
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Submitted 23 July, 2002; v1 submitted 22 July, 2002;
originally announced July 2002.
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Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As
Authors:
T. Jungwirth,
M. Abolfath,
Jairo Sinova,
J. Kucera,
A. H. MacDonald
Abstract:
We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured…
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We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.
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Submitted 24 June, 2002;
originally announced June 2002.
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Infrared conductivity of metallic (III,Mn)V ferromagnets
Authors:
Jairo Sinova,
T. Jungwirth,
S. - R. Eric Yang,
J. Kučera,
A. H. MacDonald
Abstract:
We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at $\hbar ω\sim 220 {\rm meV}$ and obscure the broadened Drude peak. We demonstrate that transverse f-sum rule measurements can be used to extract accurate values for the fr…
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We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at $\hbar ω\sim 220 {\rm meV}$ and obscure the broadened Drude peak. We demonstrate that transverse f-sum rule measurements can be used to extract accurate values for the free carrier density, bypassing the severe characterization difficulties that have till now been created by the large anomalous Hall effect in these materials.
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Submitted 26 May, 2002; v1 submitted 9 April, 2002;
originally announced April 2002.
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Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors
Authors:
T. Jungwirth,
Jürgen König,
Jairo Sinova,
J. Kučera,
A. H. MacDonald
Abstract:
We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ s…
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We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contribution from the valence band's heavy holes and the large spin stiffness that results from strong spin-orbit coupling in the valence band. Our calculations demonstrate that this model for the ferromagnetism of these systems is fully consistent with the room-temperature ferromagnetism reported for Mn doped nitrides.
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Submitted 11 January, 2002; v1 submitted 10 January, 2002;
originally announced January 2002.
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A reinterpretation of the Taub singularity
Authors:
Bjorn Jensen,
Jaromír Kučera
Abstract:
We reinterpret the well known Taub-singularity in terms of a cylinder symmetric geometry. It is shown that a cylindrical analog to the Einstein-Rosen bridge as well as a cosmic string will be present in the geometry.
We reinterpret the well known Taub-singularity in terms of a cylinder symmetric geometry. It is shown that a cylindrical analog to the Einstein-Rosen bridge as well as a cosmic string will be present in the geometry.
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Submitted 21 June, 1994;
originally announced June 1994.
