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Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
Authors:
Dąbrówka Biegańska,
Maciej Pieczarka,
Krzysztof Ryczko,
Maciej Kubisa,
Sebastian Klembt,
Sven Höfling,
Christian Schneider,
Marcin Syperek
Abstract:
We present an experimental study on optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near the crossover between $\varGamma$- and $X$-valley confined electron states. The time-integrated photoluminescence experiment at $T=$4.8 K revealed three simultaneously observed optical transitions resulting from (a) a direct exciton recombinat…
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We present an experimental study on optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near the crossover between $\varGamma$- and $X$-valley confined electron states. The time-integrated photoluminescence experiment at $T=$4.8 K revealed three simultaneously observed optical transitions resulting from (a) a direct exciton recombination, involving an electron and a hole states both located in the $\varGamma$-valley in the quantum well layer, and (b) two spatially and momentum indirect excitons, comprising of the confined electron states in the $X$-valley in the AlAs barrier with different effective masses and quantum well holes in the $\varGamma$-valley. The measured spatial extent, density dependence and temperature dependence of the structure photoluminescence revealed characteristics necessary to pinpoint the states' nature and provided their characterization crucial in future device design. Temporal dynamics observed in the time-resolved photoluminescence measurement showed the complexity of the capture and recombination dynamics, largely affected by nonradiative processes, what is additionally critical in the system's use. This solid state platform hosting both direct and indirect excitons in a highly tunable monolithic system can benefit and underline the operation principles of novel electronic and photonic devices.
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Submitted 2 April, 2024;
originally announced April 2024.
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Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review
Authors:
Wlodek Zawadzki,
Andre Raymond,
Maciej Kubisa
Abstract:
We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a ma…
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We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors.
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Submitted 24 April, 2016;
originally announced April 2016.
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Conduction electrons localized by charged magneto-acceptors A$^{2-}$ in GaAs/GaAlAs quantum wells
Authors:
M. Kubisa,
K. Ryczko,
I. Bisotto,
C. Chaubet,
A. Raymond,
W. Zawadzki
Abstract:
A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the growth direction. A combined effect of the well and magnetic field confines conduction electrons to the proximity of the ion, resulting in discrete repulsive e…
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A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the growth direction. A combined effect of the well and magnetic field confines conduction electrons to the proximity of the ion, resulting in discrete repulsive energies above the corresponding Landau levels. The theory is motivated by our experimental magneto-transport results which indicate that, in a heterostructure doped in the GaAs well with Be acceptors, one observes a boil-off effect in which the conduction electrons in the crossed-field configuration are pushed by the Hall electric field from the delocalized Landau states to the localized acceptor states and cease to conduct. A detailed analysis of the transport data shows that, at high magnetic fields, there are almost no conducting electrons left in the sample. It is concluded that one negative acceptor ion localizes up to four conduction electrons.
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Submitted 9 April, 2015;
originally announced April 2015.
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Reservoir model for two-dimensional electron gases in quantizing magnetic fields: a review
Authors:
W. Zawadzki,
A. Raymond,
M. Kubisa
Abstract:
We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir is sufficiently large, it pins the Fermi level to a certain energy. As a result, in a varying external magnetic field, the thermodynamic equilibrium will force o…
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We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir is sufficiently large, it pins the Fermi level to a certain energy. As a result, in a varying external magnetic field, the thermodynamic equilibrium will force oscillations of the electron density in and out of the quantum well (QW). This leads to a number of physical phenomena in magneto-transport, interband and intraband magneto-optics, magnetization, magneto-plasma dispersion, etc. In particular, as first proposed by Baraff and Tsui, the density oscillations in and out of QW lead to plateaus in the Integer Quantum Hall Effect (IQHE) at values observed in experiments. The gathered evidence, especially from magneto-optical investigations, allows us to conclude that, indeed, in most GaAs/GaAlAs hetrostructures one deals with open systems in which the electron density in QWs oscillates as the magnetic field varies. Relation of the density oscillations to other factors, such as electron localization, and their combined influence on the quantum transport in 2D electron gases, is discussed. In particular, a validity of the classical formula for the Hall resistivity ρxy = B/Nec is considered. It is concluded that the density oscillations are not sufficient to be regarded as the only source of plateaus in IQHE, although such claims have been sometimes made in the past and present. Still, our general conclusion is that the reservoir approach should be included in various descriptions of 2D electron gases in the present of a magnetic field. An attempt has been made to quote all the relevant literature on the subject.
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Submitted 5 June, 2013;
originally announced June 2013.
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Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures
Authors:
M. Kubisa,
L. Bryja,
K. Ryczko,
J. Misiewicz,
C. Bardot,
M. Potemski,
G. Ortner,
M. Bayer,
A. Forchel,
C. B. Sorensen
Abstract:
We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new n…
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We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.
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Submitted 26 November, 2002;
originally announced November 2002.
