Showing 1–26 of 26 results for author: Kubis, T

Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide

Authors: Prasad Sarangapani, James Charles, Tillmann Kubis

Abstract: Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap, i.e. the band tail has a strong impact on the performance of TMD applications. In this work, the band tails of various TMD monolayer and multilayer systems when pl… ▽ More Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap, i.e. the band tail has a strong impact on the performance of TMD applications. In this work, the band tails of various TMD monolayer and multilayer systems when placed on various dielectric substrates is predicted with density functional theory based nonequilibrium Green's functions. Nonlocal scattering of electrons on polar optical phonons, charged impurities and remote scattering on phonons in the dielectric materials is included in the self-consistent Born approximation. The band tails are found to critically depend on the layer thickness, temperature, do** concentration and particularly on the chosen dielectric substrate. The underlying physical mechanisms are studied in high detail and an analytical interpolation formula is given to provide a quick-reference for Urbach parameters in $MoS_2$, $WS_2$ and $WSe_2$. △ Less

Submitted 21 July, 2021; originally announced July 2021.

First-principles computation of boron-nitride-based ultrathin UV-C light emitting diodes

Authors: **ying Wang, Kuang-Chung Wang, Tillmann Kubis

Abstract: Short wavelength ultraviolet (UV-C) light deactivates DNA of any germs, including multiresistive bacteria and viruses like COVID-19. Two-dimensional (2D) material-based UV-C light emitting diodes can potentially be integrated into arbitrary surfaces to allow for shadow-free surface disinfection. In this work, we perform a series of first-principles calculations to identify the core components of u… ▽ More Short wavelength ultraviolet (UV-C) light deactivates DNA of any germs, including multiresistive bacteria and viruses like COVID-19. Two-dimensional (2D) material-based UV-C light emitting diodes can potentially be integrated into arbitrary surfaces to allow for shadow-free surface disinfection. In this work, we perform a series of first-principles calculations to identify the core components of ultrathin LEDs based on hexagonal boron nitride (hBN). The electrons and holes are predicted to be confined in multiple quantum wells (MQWs) by combining hBN layers with different stacking orders. Various p- and n-do** candidates for hBN are assessed, and the relative p- and n-type metal contacts with low Schottky barrier heights are identified. The findings are summarized in a concrete UV-C LED structure proposal. △ Less

Submitted 18 October, 2020; originally announced October 2020.

Comments: 20 pages, 8 figures

Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations

Authors: Daniel A. Lemus, James Charles, Tillmann Kubis

Abstract: The nonequilibrium Green's function (NEGF) method is often used to predict transport in atomistically resolved nanodevices and yields an immense numerical load when inelastic scattering on phonons is included. To ease this load, this work extends the atomistic mode space approach of Ref. [1] to include inelastic scattering on optical and acoustic phonons in silicon nanowires. This work also includ… ▽ More The nonequilibrium Green's function (NEGF) method is often used to predict transport in atomistically resolved nanodevices and yields an immense numerical load when inelastic scattering on phonons is included. To ease this load, this work extends the atomistic mode space approach of Ref. [1] to include inelastic scattering on optical and acoustic phonons in silicon nanowires. This work also includes the exact calculation of the real part of retarded scattering self-energies in the reduced basis representation using the Kramers-Kronig relations. The inclusion of the Kramers-Kronig relation for the real part of the retarded scattering self-energy increases the impact of scattering. Virtually perfect agreement with results of the original representation is achieved with matrix rank reductions of more than 97%. Time-to-solution improvements of more than 200$\times$ and peak memory reductions of more than 7$\times$ are shown. This allows for the solution of electron transport scattered on phonons in atomically resolved nanowires with cross-sections larger than 5 nm $\times$ 5 nm. △ Less

Submitted 21 July, 2020; v1 submitted 20 March, 2020; originally announced March 2020.

Comments: 11 pages, 10 figures

Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport

Authors: Kuang-Chung Wang, Roberto Grassi, Yuanchen Chu, Shree Hari Sureshbabu, Junzhe Geng, Prasad Sarangapani, Xinchen Guo, Mark Townsend, Tillmann Kubis

Abstract: State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in opt… ▽ More State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in optoelectronic nanodevices represent an immense numerical challenge when solved within NEGF. In this work, the numerically efficient Büttiker-probe model is expanded to include electron-hole recombination and generation in the NEGF framework. Benchmarks of the new multiple-particle Büttiker probe method against state-of-the-art quantum-corrected DD models show quantitative agreements except in cases of pronounced tunneling and interference effects. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Introducing Open boundary conditions in modeling nonperiodic materials and interfaces: the impact of the periodic assumption

Authors: James Charles, Sabre Kais, Tillmann Kubis

Abstract: Simulations are essential to accelerate the discovery of new materials and to gain full understanding of known ones. Although hard to realize experimentally, periodic boundary conditions are omnipresent in material simulations. In this work, we intro-duce ROBIN (recursive open boundary and interfaces), the first method allowing open boundary conditions in material and interface modeling. The compu… ▽ More Simulations are essential to accelerate the discovery of new materials and to gain full understanding of known ones. Although hard to realize experimentally, periodic boundary conditions are omnipresent in material simulations. In this work, we intro-duce ROBIN (recursive open boundary and interfaces), the first method allowing open boundary conditions in material and interface modeling. The computational costs are limited to solving quantum properties in a focus area which allows explicitly discretizing millions of atoms in real space and to consider virtually any type of environment (be it periodic, regular, or ran-dom). The impact of the periodicity assumption is assessed in detail with silicon dopants in graphene. Graphene was con-firmed to produce a band gap with periodic substitution of 3% carbon with silicon in agreement with published periodic boundary condition calculations. Instead, 3% randomly distributed silicon in graphene only shifts the energy spectrum. The predicted shift agrees quantitatively with published experimental data. Key insight of this assessment is, assuming periodici-ty elevates a small perturbation of a periodic cell into a strong impact on the material property prediction. Periodic boundary conditions can be applied on truly periodic systems only. More general systems should apply an open boundary method for reliable predictions. △ Less

Submitted 3 February, 2020; v1 submitted 6 September, 2019; originally announced September 2019.

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

Authors: Yuanchen Chu, **g**g Shi, Kai Miao, Yang Zhong, Prasad Sarangapani, Timothy S. Fisher, Gerhard Klimeck, Xiulin Ruan, Tillmann Kubis

Abstract: The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogene… ▽ More The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Büttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Büttiker probes can reliably predict phonon transport across interfaces and at finite temperatures. △ Less

Submitted 18 November, 2019; v1 submitted 30 August, 2019; originally announced August 2019.

Comments: 4 pages, 5 figures

Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices

Authors: Prasad Sarangapani, Yuanchen Chu, James Charles, Tillmann Kubis

Abstract: High-do** induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowir… ▽ More High-do** induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowires of the same. Electrons are solved in the non-equilibrium Green's function method in multi-band atomistic tight binding. Scattering on polar optical phonons and charged impurities is solved in the self-consistent Born approximation. The corresponding nonlocal scattering self-energies as well as their numerically efficient formulations are introduced for ultra-thin bodies and nanowires. Predicted Urbach band tails and conduction band gap narrowing agree well with experimental literature for a range of temperatures and do** concentrations. Polynomial fits of the Urbach tail and band gap narrowing as a function of do** are tabulated for quick reference. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. Applied 12, 044045 (2019)

Explicit screening full band quantum transport model for semiconductor nanodevices

Authors: Yuanchen Chu, Prasad Sarangapani, James Charles, Gerhard Klimeck, Tillmann Kubis

Abstract: State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants.… ▽ More State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This paper exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models. △ Less

Submitted 30 March, 2018; originally announced March 2018.

Comments: 8 pages, 8 figures

Control of interlayer delocalization in 2H transition metal dichalcogenides

Authors: Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, Tillmann Kubis

Abstract: It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac… ▽ More It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hop**. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence. △ Less

Submitted 15 September, 2017; v1 submitted 6 March, 2017; originally announced March 2017.

Comments: 11 pages, 15 figures

Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations

Authors: Sridhar Sadasivam, Ning Ye, James Charles, Kai Miao, Joseph P. Feser, Tillmann Kubis, Timothy S. Fisher

Abstract: In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is t… ▽ More In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface. △ Less

Submitted 12 January, 2017; v1 submitted 10 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 95, 085310 (2017)

Transferable tight binding model for strained group IV and III-V materials and heterostructures

Authors: Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, Gerhard Klimeck

Abstract: It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V materials. The tight binding model is parameterized with respect to Hybrid functional(HSE06) calculations for varieties of strained systems. The tight b… ▽ More It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V materials. The tight binding model is parameterized with respect to Hybrid functional(HSE06) calculations for varieties of strained systems. The tight binding calculations of ultra small superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of tight binding model to superlattices demonstrates that transferable tight binding model with nearest neighbor interactions can be obtained for group IV and III-V materials. △ Less

Submitted 4 June, 2016; v1 submitted 13 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 045311 (2016)

NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law

Authors: Robert Andrawis, Jose David Bermeo, James Charles, Jianbin Fang, Jim Fonseca, Yu He, Gerhard Klimeck, Zheng** Jiang, Tillmann Kubis, Daniel Mejia, Daniel Lemus, Michael Povolotskyi, Santiago Alonso Perez Rubiano, Prasad Sarangapani, Lang Zeng

Abstract: Electronic performance predictions of modern nanotransistors require nonequilibrium Green's functions including incoherent scattering on phonons as well as inclusion of random alloy disorder and surface roughness effects. The solution of all these effects is numerically extremely expensive and has to be done on the world's largest supercomputers due to the large memory requirement and the high per… ▽ More Electronic performance predictions of modern nanotransistors require nonequilibrium Green's functions including incoherent scattering on phonons as well as inclusion of random alloy disorder and surface roughness effects. The solution of all these effects is numerically extremely expensive and has to be done on the world's largest supercomputers due to the large memory requirement and the high performance demands on the communication network between the compute nodes. In this work, it is shown that NEMO5 covers all required physical effects and their combination. Furthermore, it is also shown that NEMO5's implementation of the algorithm scales very well up to about 178176CPUs with a sustained performance of about 857 TFLOPS. Therefore, NEMO5 is ready to simulate future nanotransistors. △ Less

Submitted 15 October, 2015; originally announced October 2015.

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Authors: K. Miao, S. Sadasivam, J. Charles, G. Klimeck, T. S. Fisher, T. Kubis

Abstract: Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF an… ▽ More Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF and discusses all implications of this method. Büttiker probe parameters are presented that reproduce within NEGF experimental phonon conductances of Si and Ge between 10K and 1000K. Results of this method in SiGe heterojunctions illustrate the impact of interface relaxation on the device heat conductance and the importance of inelastic scattering for the phonon distribution. △ Less

Submitted 1 December, 2015; v1 submitted 26 August, 2015; originally announced August 2015.

Surface Passivation in Empirical Tight Binding

Authors: Yu He, Yaohua Tan, Zheng** Jiang, Michael Povolotskyi, Gerhard Klimeck, Tillmann Kubis

Abstract: Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an impl… ▽ More Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameters. This method is applied to a Si quantum well and a Si ultra-thin body transistor oxidized with SiO2 in several oxidation configurations. Comparison with ab-initio results and experiments verifies the presented method. Oxidation configurations that severely hamper the transistor performance are identified. It is also shown that the commonly used implicit H atom passivation overestimates the transistor performance. △ Less

Submitted 30 July, 2015; originally announced July 2015.

Comments: 6 pages, 4 figures

In-surface confinement of topological insulator nanowire surface states

Authors: Fan W. Chen, Luis A. Jauregui, Yaohua Tan, Michael Manfra, Gerhard Klimeck, Yong P. Chen, Tillmann Kubis

Abstract: The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potentia… ▽ More The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects. △ Less

Submitted 5 May, 2016; v1 submitted 14 May, 2015; originally announced May 2015.

Comments: 2015 Applied Physics Letters

Transferable tight binding model for strained group IV and III-V heterostructures

Authors: Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, Gerhard Klimeck

Abstract: In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices. In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices. △ Less

Submitted 25 April, 2015; originally announced April 2015.

Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution

Authors: Yaohua P. Tan, Michael Povolotsky, Tillmann Kubis, Timothy B. Boykin, Gerhard Klimeck

Abstract: Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations based on existing parameters lead to unphysical results in ultra small structures like the As terminated GaAs ultra thin bodies(UTBs). In this work, it is shown t… ▽ More Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations based on existing parameters lead to unphysical results in ultra small structures like the As terminated GaAs ultra thin bodies(UTBs). In this work, it is shown that more reliable parameterizations can be obtained by a process of map** ab-initio bands and wave functions to tight binding models. This process enables the calibration of not only the ETB energy bands but also the ETB wave functions with corresponding ab-initio calculations. Based on the map** process, ETB model of Si and GaAs are parameterized with respect to hybrid functional calculations. Highly localized ETB basis functions are obtained. Both the ETB energy bands and wave functions with subatomic resolution of UTBs show good agreement with the corresponding hybrid functional calculations. The ETB methods can then be used to explain realistically extended devices in non-equilibrium that can not be tackled with ab-initio methods. △ Less

Submitted 16 March, 2015; originally announced March 2015.

Comments: 11pages, 10 figures

Journal ref: Phys. Rev. B 92, 085301 (2015)

Modeling techniques for quantum cascade lasers

Authors: Christian Jirauschek, Tillmann Kubis

Abstract: Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency and spectral range req… ▽ More Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function (NEGF) formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures. △ Less

Submitted 11 December, 2014; originally announced December 2014.

Journal ref: Appl. Phys. Rev. 1, 011307 (2014)

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures

Authors: Parijat Sengupta, Tillmann Kubis, Yaohua Tan, Gerhard Klimeck

Abstract: Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as channel material for TI-based field effect transistors. While such a transistor offers superior terminal characteristics, they suffer from an inhere… ▽ More Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as channel material for TI-based field effect transistors. While such a transistor offers superior terminal characteristics, they suffer from an inherent zero band gap problem. The absence of a band gap for the surface states prevents an easy turn-off mechanism. In this work, techniques that can be employed to easily open a band gap for the TI surface states is introduced. Two approaches are described: 1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. 2) An \textit{s}-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. This TI-superconductor heterostructure is modeled using the Bogoliubov-de Gennes Hamiltonian. A comparison demonstrating the finite size effects on surface states of a 3D-TI and edge states of a CdTe/HgTe/CdTe-based 2D-TI is also presented. 3D-TI nanostructures can be reduced to dimensions as low as 10.0 $ \mathrm{nm} $ in contrast to 2D-TI structures which require a thickness of at least 100.0 $ \mathrm{nm} $. All calculations are performed using the continuum four-band k.p Hamiltonian. △ Less

Submitted 2 September, 2014; v1 submitted 26 August, 2014; originally announced August 2014.

Comments: 9 pages,12 figures

An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance

Authors: Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis, James Charles, Gerhard Klimeck

Abstract: The Semi-Empirical TB model developed in part I is applied to metal transport problems of current relevance in part II. A systematic study of the effect of quantum confinement, transport orientation and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conduct… ▽ More The Semi-Empirical TB model developed in part I is applied to metal transport problems of current relevance in part II. A systematic study of the effect of quantum confinement, transport orientation and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in Cu nanowires is found to be the most favorable for mitigating conductivity degradation since it shows least reduction in conductance with confinement and responds most favorably to compressive strain. △ Less

Submitted 24 November, 2013; originally announced November 2013.

Comments: 13 pages with 8 figures in double spaced manuscript format

An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation

Authors: Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis, Timothy Boykin, Gerhard Klimeck

Abstract: Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal… ▽ More Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal nanostructures and metallic interface systems is described. Part I of this paper describes the development and validation of the new TB model. The new model incorporates intra-atomic diagonal and off-diagonal elements for implicit self-consistency and greater transferability across bonding environments. The dependence of the on-site energies on strain has been obtained by appealing to the Moments Theorem that links closed electron paths in the system to energy moments of angular momentum resolved local density of states obtained ab-initio. The model matches self-consistent DFT electronic structure results for bulk FCC metals with and without strain, metallic alloys, metallic interfaces and metallic nanostructures with high accuracy and can be used in predictive electronic structure and transport problems in metallic systems at realistically extended length scales △ Less

Submitted 24 November, 2013; originally announced November 2013.

Comments: 34 pages including appendices, parameters and supplemental material in double spaced format

Efficient and realistic device modeling from atomic detail to the nanoscale

Authors: J. E. Fonseca, T. Kubis, M. Povolotskyi, B. Novakovic, A. Ajoy, G. Hegde, H. Ilatikhameneh, Z. Jiang, P. Sengupta, Y. Tan, G. Klimeck

Abstract: As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures… ▽ More As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics. △ Less

Submitted 17 October, 2013; originally announced October 2013.

Comments: 10 pages, 12 figures

Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport

Authors: Lang Zeng, Yu He, Michael Povolotsky, XiaoYan Liu, Gerhard Klimeck, Tillmann Kubis

Abstract: In this work, the low rank approximation concept is extended to the non-equilibrium Green's function (NEGF) method to achieve a very efficient approximated algorithm for coherent and incoherent electron transport. This new method is applied to inelastic transport in various semiconductor nanodevices. Detailed benchmarks with exact NEGF solutions show 1) a very good agreement between approximated a… ▽ More In this work, the low rank approximation concept is extended to the non-equilibrium Green's function (NEGF) method to achieve a very efficient approximated algorithm for coherent and incoherent electron transport. This new method is applied to inelastic transport in various semiconductor nanodevices. Detailed benchmarks with exact NEGF solutions show 1) a very good agreement between approximated and exact NEGF results, 2) a significant reduction of the required memory, and 3) a large reduction of the computational time (a factor of speed up as high as 150 times is observed). A non-recursive solution of the inelastic NEGF transport equations of a 1000 nm long resistor on standard hardware illustrates nicely the capability of this new method. △ Less

Submitted 1 April, 2013; originally announced April 2013.

Comments: 9 pages, 7 figures

Engineering Nanowire n-MOSFETs at Lg < 8 nm

Authors: Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis, Michael Povolotskyi, Mark Lundstrom, Gerhard Klimeck

Abstract: As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered u… ▽ More As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs. △ Less

Submitted 21 March, 2013; originally announced March 2013.

Comments: 6 pages, 7 figures, journal

Design principles for HgTe based topological insulator devices

Authors: Parijat Sengupta, Tillmann Kubis, Yaohua Tan, Michael Povolotskyi, Gerhard Klimeck

Abstract: The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be changed.The cri… ▽ More The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be changed.The critical quantum well width is shown to depend on temperature, applied stress, growth directions and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields. △ Less

Submitted 22 February, 2013; originally announced February 2013.

Comments: 8 pages, 13 figures

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT map**

Authors: Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Yu He, Zheng** Jiang, Gerhard Klimeck, Timothy B. Boykin

Abstract: The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational map**. A further shortcoming of tradit… ▽ More The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational map**. A further shortcoming of traditional ETB is the lack of an explicit basis. In this work, a DFT map** process which constructs TB parameters and explicit basis from DFT calculations is developed. The method is applied to two materials: GaAs and MgO. Compared with the existing TB parameters, the GaAs parameters by DFT map** show better agreement with the DFT results in bulk band structure calculations and lead to different indirect valleys when applied to nanowire calculations. The MgO TB parameters and TB basis functions are also obtained through the DFT map** process. △ Less

Submitted 30 October, 2012; originally announced October 2012.

Comments: single column, 9 pages, 5 figures

MSC Class: 82-08