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Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device
Authors:
M. Surynek,
J. Zubac,
K. Olejnik,
A. Farkas,
F. Krizek,
L. Nadvornik,
P. Kubascik,
F. Trojanek,
R. P. Campion,
V. Novak,
T. Jungwirth,
P. Nemec
Abstract:
Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi…
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Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory.
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Submitted 30 January, 2024;
originally announced January 2024.
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Accessing ultrafast spin-transport dynamics in copper using broadband terahertz spectroscopy
Authors:
Jiří Jechumtál,
Reza Rouzegar,
Oliver Gueckstock,
Christian Denker,
Wolfgang Hoppe,
Quentin Remy,
Tom S. Seifert,
Peter Kubaščík,
Georg Woltersdorf,
Piet W. Brouwer,
Markus Münzenberg,
Tobias Kampfrath,
Lukáš Nádvorník
Abstract:
We study the spatiotemporal dynamics of ultrafast electron spin transport across nanometer-thick copper layers using broadband terahertz spectroscopy. Our analysis of temporal delays, broadening and attenuation of the spin-current pulse revealed ballistic-like propagation of the pulse peak, approaching the Fermi velocity, and diffusive features including a significant velocity dispersion. A compar…
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We study the spatiotemporal dynamics of ultrafast electron spin transport across nanometer-thick copper layers using broadband terahertz spectroscopy. Our analysis of temporal delays, broadening and attenuation of the spin-current pulse revealed ballistic-like propagation of the pulse peak, approaching the Fermi velocity, and diffusive features including a significant velocity dispersion. A comparison to the frequency-dependent Ficks law identified the diffusion-dominated transport regime for distances larger than 2 nm. The findings lie the groundwork for designing future broadband spintronic devices.
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Submitted 21 May, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films
Authors:
Peter Kubaščík,
Andrej Farkaš,
Kamil Olejník,
Tinkara Troha,
Matěj Hývl,
Filip Krizek,
Deep C. Joshi,
Tomáš Ostatnický,
Jiří Jechumtál,
Eva Schmoranzerová,
Richard P. Campion,
Jakub Zázvorka,
Vít Novák,
Petr Kužel,
Tomáš Jungwirth,
Petr Němec,
Lukáš Nádvorník
Abstract:
Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be…
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Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates.
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Submitted 27 March, 2023;
originally announced March 2023.
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Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$
Authors:
Lukáš Nádvorník,
Oliver Gueckstock,
Lukas Braun,
Chengwang Niu,
Joachim Gräfe,
Gunther Richter,
Gisela Schütz,
Hidenori Takagi,
Tom S. Seifert,
Peter Kubaščík,
Avanindra K. Pandeya,
Abdelmadjid Anane,
Heejun Yang,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Martin Wolf,
Yuriy Mokrousov,
Hiroyuki Nakamura,
Tobias Kampfrath
Abstract:
Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafa…
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Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spin current that is converted into an in-plane charge current and, thus, a measurable THz electromagnetic pulse. The THz signal amplitude as a function of the NbSe$_2$ thickness shows that the measured signals are fully consistent with an ultrafast optically driven injection of an in-plane-polarized spin current into NbSe$_2$. Modeling of the spin-current dynamics reveals that a sizable fraction of the total S2C originates from the bulk of NbSe$_2$ with the same, negative, sign as the spin Hall angle of pure Nb. By quantitative comparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt reference samples and the results of ab-initio calculations, we estimate that the spin Hall angle of NbSe$_2$ for an in-plane polarized spin current lies between -0.2% and -1.1%, while the THz spin-current relaxation length is of the order of a few nanometers.
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Submitted 1 August, 2022;
originally announced August 2022.
