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III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Authors:
Michael A. Mastro,
Travis J. Anderson,
Marko J. Tadjer,
Francis J. Kub,
Jennifer K. Hite,
Jihyun Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emittin…
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This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Authors:
Marko J. Tadjer,
Virginia D. Wheeler,
Brian P. Downey,
Zachary R. Robinson,
David J. Meyer,
Charles R. Eddy, Jr.,
Fritz J. Kub
Abstract:
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metal…
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Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 $°$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 $°$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.
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Submitted 19 February, 2016;
originally announced February 2016.
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ZnS/Diamond Composite Coatings for Infrared Transmission Applications Formed by the Aerosol Deposition Method
Authors:
Scooter D. Johnson,
Fritz J. Kub,
Charles R. Eddy Jr
Abstract:
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room tem…
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The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room temperature and at a high deposition rate on a variety of substrates. Deposition is achieved by creating a pressure gradient that accelerates micrometer-scale particles in an aerosol to high velocity.
Upon impact with the target substrate the particles fracture and embed. Continued deposition forms the thick compacted film. Deposition from an aerosolized mixture of ZnS and diamond powders onto all targets results in linear trend from apparent sputter erosion of the substrate at 100% diamond to formation of a film with increasing fractions of ZnS. The crossover from abrasion to film formation on sapphire occurs above about 50% ZnS and a mixture of 90% ZnS and 10% diamond forms a well-adhered film of about 0.7 μm thickness at a rate of 0.14 μm/min. Resulting films are characterized by scanning electron microscopy, profilometry, infrared transmission spectroscopy, and x-ray photoemission spectroscopy. These initial films mark progress toward the future goal of coating ZnS substrates for abrasion resistance.
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Submitted 16 July, 2013;
originally announced July 2013.
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Authors:
Joshua D. Caldwell,
Travis J. Anderson,
James C. Culbertson,
Glenn G. Jernigan,
Karl D. Hobart,
Fritz J. Kub,
Marko J. Tadjer,
Joseph L. Tedesco,
Jennifer K. Hite,
Michael A. Mastro,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr…
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In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.
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Submitted 14 October, 2009;
originally announced October 2009.
